CN114447257A - Flexible substrate stripping device and method - Google Patents
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- CN114447257A CN114447257A CN202210050954.8A CN202210050954A CN114447257A CN 114447257 A CN114447257 A CN 114447257A CN 202210050954 A CN202210050954 A CN 202210050954A CN 114447257 A CN114447257 A CN 114447257A
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- 206010027146 Melanoderma Diseases 0.000 description 1
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Abstract
The application provides a flexible substrate stripping device and a method, and the flexible substrate stripping method comprises the following steps: placing a substrate base plate formed with a flexible base plate on an objective table; scanning and irradiating the substrate at least twice by using laser; the incident angle of the laser incident to the substrate base plate in at least one scanning irradiation is 40-70 degrees, so that the technical problem of black point display of the flexible display device picture is solved by utilizing a flexible base plate stripping method.
Description
Technical Field
The application relates to the technical field of display, in particular to a flexible substrate stripping device and method.
Background
Flexible display devices have flexible and bendable properties, and thus become the mainstream of the display field with technological progress. The flexible display device generally includes a flexible substrate and a substrate, wherein the flexible substrate is made of colored polyimide. And implementing each process flow of the active matrix organic light-emitting diode on the substrate coated with the high-temperature-resistant polyimide film, and then separating the flexible substrate from the substrate by using a laser lift-off technology.
When the flexible substrate is peeled by adopting a laser irradiation method, namely a laser peeling method, laser is incident to the substrate and irradiates on one surface of the flexible substrate through the substrate, and the surface of the flexible substrate facing the substrate is carbonized due to the strong absorption of the polyimide film to specific laser wavelength, so that the adhesion between the flexible substrate and the substrate is reduced, and the separation of the flexible substrate and the substrate is realized.
When foreign matters, corrosion, pits, bubbles and scratches exist on the surface of the substrate base plate, which is opposite to the flexible base plate, the defects cannot be completely removed by cleaning. When laser is incident to the substrate base plate by adopting the mode of the prior art, the laser cannot penetrate through the defects of the substrate base plate or is directly shielded and scattered by the defects of the substrate base plate. Therefore, the area of the flexible substrate corresponding to the defect is adhered to the substrate, and the surface of the flexible substrate is torn by stress in the subsequent separation process, so that the corresponding area of the flexible substrate is deformed, and even the pixel structure of the area is adversely affected. For example, a thin film transistor causing a pixel structure in the region is left on the substrate base substrate, causing a phenomenon that a black dot occurs when the flexible display device displays a picture.
Disclosure of Invention
The application provides a flexible substrate stripping device and a method, which are used for solving the technical problem that a flexible display device displays black spots on a picture.
The application provides a flexible substrate stripping method, which comprises the following steps:
placing a substrate base plate formed with a flexible base plate on an objective table;
carrying out scanning irradiation on the substrate at least twice by using laser;
wherein, the incidence angle of the laser to the substrate base plate in at least one scanning irradiation is 40-70 degrees.
Optionally, in the step of performing scanning irradiation on the substrate at least twice with the laser, the method includes the following steps:
utilizing first laser to enter the surface of the substrate base plate in a first incidence angle direction, and carrying out first scanning irradiation on the substrate base plate, wherein the first incidence angle is 7-10 degrees;
and utilizing a second laser to enter the surface of the substrate base plate at a second incidence angle direction, and carrying out second scanning irradiation on the substrate base plate, wherein the second incidence angle is 40-70 degrees.
Optionally, in the step of performing scanning irradiation on the substrate at least twice with the laser, the method includes the following steps:
utilizing laser to enter the surface of the substrate base plate in a first incidence angle direction, and carrying out first scanning irradiation on the substrate base plate;
rotating the stage 160 ° to 175 ° about vertical;
utilizing laser to enter the surface of the substrate base plate in a first incidence angle direction, and carrying out secondary scanning irradiation on the substrate base plate;
wherein the first incident angle is 40 ° to 70 °.
Alternatively, the scanning irradiation is performed at least twice along the short side of the substrate base plate with the laser.
Optionally, the laser has a beam width of 800 μm.
Optionally, before the step of irradiating the substrate with the laser by scanning at least twice, the method further includes the following steps:
cleaning the surface of the substrate base plate;
the substrate is detected using an automated optical detector.
Optionally, after the step of detecting the substrate by using the automatic optical detector, the method further includes:
judging whether the size of the defect on the substrate is larger than or equal to a preset threshold value, if so, enabling the substrate to flow to a recovery station;
otherwise, the substrate is irradiated with the laser light by at least two scanning shots.
Optionally, in the step of placing the substrate base plate formed with the flexible base plate on the stage, the method includes the following steps:
arranging a sacrificial layer on a substrate;
arranging a flexible substrate on the sacrificial layer;
the substrate base plate is placed on the stage.
Correspondingly, the application also provides a flexible substrate stripping device, and the flexible substrate stripping method is applied, and the flexible substrate stripping device comprises an objective table and at least one laser emitter, wherein the objective table is used for bearing a substrate formed with a flexible substrate; at least one laser emitter located on the stage; when the flexible substrate is peeled, the laser emitted by the laser emitter scans and irradiates the substrate base plate at least twice, and the incident angle of the laser incident on the substrate base plate is 40-70 degrees.
Furthermore, the flexible substrate stripping device also comprises a reflector which is arranged on the objective table, and laser emitted by the laser emitter is incident to the substrate at an incident angle of 40-70 degrees after being reflected by the reflector.
The application provides a flexible base plate stripping off device and method, utilize laser to carry out scanning irradiation twice at least to the surface of substrate base plate for the defect on substrate base plate surface is when the scanning of irradiation twice at least, and the projection position that this defect is on the flexible base plate orientation substrate base plate surface along incident direction is different, makes on the flexible base plate with this foreign matter or defect correspondence region can be decomposed more effectively, so that flexible base plate and substrate base plate separation.
When the substrate base plate is irradiated and scanned by laser, the length of a refraction area which needs to be refracted to the flexible base plate is larger, so that the effect of separating the substrate base plate from the flexible base plate is ensured; meanwhile, it is necessary to control reflection loss caused through the surface of the substrate base plate to ensure the efficiency of separation. In a reasonable range, the larger the incident angle of the laser to the surface of the substrate is, the longer the refractive region length of the laser refracted to the surface of the flexible substrate by the substrate is. Meanwhile, as the incident angle is larger, the loss reflected by the substrate surface of the substrate is larger, and thus, in summary, the incident angle is preferably 40 ° to 70 ° in the present application.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic view of laser incidence in a flexible substrate separation apparatus according to the present application;
FIG. 2 is a flowchart illustrating a method for peeling off a flexible substrate according to an embodiment of the present disclosure;
fig. 3 is a flowchart of a flexible substrate peeling method according to a second embodiment of the present disclosure;
FIG. 4 is a data table of peeling defect rates when the defect is a hot melt adhesive in the method for peeling a flexible substrate provided by the present application;
FIG. 5 is a table showing the peel defect rate of PAS in the method for peeling a flexible substrate according to the present application;
fig. 6 is a data table of the peeling defect rate when the defect is a scratch in the flexible substrate peeling method provided by the present application.
Description of reference numerals:
100. a substrate base plate; 200. a flexible substrate; 300. an object stage.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application. Furthermore, it should be understood that the detailed description and specific examples, while indicating exemplary embodiments of the invention, are given by way of illustration and explanation only, and are not intended to limit the scope of the invention. In the present application, unless otherwise specified, the use of directional terms such as "upper", "lower", "left" and "right" generally refer to upper, lower, left and right in the actual use or operation of the device, and specifically to the orientation of the drawing figures.
The present application provides an apparatus and a method for peeling off a flexible substrate, which are described in detail below. It should be noted that the following description of the embodiments is not intended to limit the preferred order of the embodiments of the present application. In the following embodiments, the descriptions of the respective embodiments have respective emphasis, and reference may be made to related descriptions of other embodiments for parts that are not described in detail in a certain embodiment.
Referring to fig. 1 to 6, the present application provides a method for peeling a flexible substrate, which includes the following steps:
step S100 is to place the substrate 100 on which the flexible substrate 200 is formed on the stage 300.
Referring to fig. 1, the substrate 100 may be a transparent glass substrate, a transparent plastic substrate, or other transparent substrate, and the material of the flexible substrate 200 disposed on the substrate 100 includes but is not limited to a polyimide film, and the material of the flexible substrate 200 in this application is preferably a polyimide film. Coating a polyimide resin solution on one surface of the substrate 100, and then baking the polyimide resin solution by using an oven, wherein when the baking temperature is higher than the decomposition temperature of the polyimide resin, the polyimide resin is decomposed on the surface of the substrate 100, so that a polyimide film is deposited and cured on the surface of the substrate 100 to prepare and form the flexible substrate 200. In the present application, a display panel, such as an active matrix organic light emitting diode or an active matrix light emitting diode, is fabricated on the flexible substrate 200.
S300, performing at least two scanning irradiations on the substrate 100 with the laser, wherein an incident angle of the laser to the substrate 100 in the at least one scanning irradiation is 40 ° to 70 °.
Scanning irradiation is performed from one side of the base substrate 100 to the other side thereof using a laser emitter, so that laser light is sequentially refracted onto the flexible substrate 200 through the base substrate 100. Due to the fact that the flexible substrate 200 (polyimide film) absorbs the specific laser wavelength strongly, the surface of the flexible substrate 200 facing the substrate 100 is carbonized, so that the adhesion between the flexible substrate 200 and the substrate 100 is reduced, the flexible substrate 200 is separated from the substrate 100, and the phenomenon that the display device displays black spots on the picture is avoided.
When the laser emitted from the laser emitter is irradiated onto the substrate 100, a portion of the laser is refracted onto the flexible substrate 200 through the substrate 100, and another portion of the laser is reflected by the surface of the substrate 100. According to the optical path diagram in fig. 1, assuming that the thickness of the base substrate 100 is 500 μm, when the incident angle α of the laser light incident on the surface of the base substrate 100 is 40 °, the length a of the region where the laser light is refracted to the surface of the flexible substrate 200 through the base substrate 100 is 0.24 mm; when α is 70 °, the length a of the region where the laser light is refracted through the base substrate 100 to the surface of the flexible substrate 200 is 0.42 mm. Meanwhile, the laser light incident on the surface of the substrate base 100 includes horizontal vibration light and vertical vibration light, and when the laser light is reflected by the substrate base 100, emission loss is caused. When the incident angle α is 40 °, the reflection loss of the horizontal oscillation light by the base substrate 100 is 7.2%, and the reflection loss of the vertical oscillation light by the base substrate 100 is 1.3%, and the average reflection loss of the entire laser beam is 4.3%. When the incident angle α is 70 °, the reflection loss of the horizontal oscillation light by the base substrate 100 is 29%, and the reflection loss of the vertical oscillation light by the base substrate 100 is 4%, and the overall average reflection loss of the laser light is 16.5%. When the incident angle α is 10 °, the reflection loss of the horizontal vibration light and the vertical vibration light through the entire substrate 100 is 3.75%.
When the substrate 100 is scanned by laser irradiation, the length of the refraction region that needs to be refracted to the flexible substrate 200 is large, so as to ensure the effect of separating the substrate 100 from the flexible substrate 200; meanwhile, it is necessary to control reflection loss caused by the surface of the base substrate 100 to ensure the efficiency of separating the base substrate 100 from the flexible substrate 200. In a reasonable range, the larger the incident angle of the laser light incident on the surface of the substrate 100, the longer the refractive region length refracted to the surface of the flexible substrate 200 by the substrate 100. Meanwhile, as the incident angle is larger, the loss reflected by the surface of the substrate base plate 100 is larger, and thus the incident angle is preferably 40 ° to 70 ° in the present application as described above.
In addition, in the present application, the surface of the substrate 100 is irradiated with the laser light by at least two scanning scans, so that when the foreign matter or defect on the surface of the substrate 100 is scanned by at least two scanning scans, the projection positions of the foreign matter or defect on the surface of the flexible substrate 200 facing the substrate 100 along the incident direction are different, and the region corresponding to the foreign matter or defect on the flexible substrate 200 can be more effectively decomposed, so that the flexible substrate 200 and the substrate 100 can be separated. In the present application, when the substrate 100 is irradiated with the all-solid-state semiconductor laser, after the substrate 100 is irradiated for the first time, the peeling defect rate due to defects of 100 μm or more is 47% to 53%, and after the substrate 100 is irradiated for the second time, the peeling defect rate due to defects of 500 μm or less is 0, and the peeling defect rate due to defects of 500 μm or more is 5% to 11%.
Further, referring to fig. 2, in the step of performing at least two scanning shots on the substrate 100 by using the laser, the method includes the following steps:
s310, utilizing laser to enter the surface of the substrate 100 at a first incident angle direction, and performing a first scanning irradiation on the substrate 100;
s320, rotating the object stage 300 around the vertical direction by 160-175 degrees;
s330, utilizing laser to enter the surface of the substrate base plate 100 in the first incident angle direction, and carrying out secondary scanning irradiation on the substrate base plate 100;
wherein the first incident angle is 40 ° to 70 °.
After the first scanning irradiation is performed by the laser beam incident on the substrate 100 at the first incident angle, the substrate 100 placed on the stage 300 is rotated by 160 ° to 175 ° with respect to the laser emitter by rotating the stage 300, and then the second scanning irradiation is performed by the laser beam incident on the substrate 100 at the same first incident angle. Utilize objective table 300 to drive substrate 100 and for laser emitter rotation 160 to 175, make foreign matter or defect on substrate 100 shine with the scanning irradiation time of the second time projection position different for the scanning irradiation of first time, therefore in order to utilize many times to shine and fully effectively decompose, so that the region that makes flexible base plate 200 correspond foreign matter or defect can separate with substrate 100, thereby be convenient for flexible base plate 200 and substrate 100's complete separation, improve flexible base plate 200's peeling effect, avoid appearing the condition that the display device picture shows the black spot.
In addition, the stage 300 in this application drives the substrate base plate 100 to rotate 160 ° to 175 ° relative to the laser emitter, so that the foreign matter or defect on the substrate base plate 100 can effectively separate the projection generated by the first irradiation from the projection generated by the second irradiation, so that the region of the flexible base plate 200 corresponding to the foreign matter or defect can be separated from the substrate base plate 100. Since most of the linear defects (such as scratches, foreign matters, dirt, and the like) are distributed horizontally along the length or width direction of the substrate 100, projections generated by the linear defects during multiple shots can be effectively separated by limiting the substrate 100 to rotate 160 ° to 175 ° relative to the laser emitter by the stage 300, so that the overlapping of the projections generated by the linear defects during multiple shots can be reduced as much as possible, and the effect of separating the flexible substrate 200 from the substrate 100 can be improved.
For the defects of the hot melt adhesive formation, it can be known from the test data in fig. 4 that:
when the scanning base substrate 100 is irradiated twice with laser light in the direction of the incident angle of 40 ° to 70 °, the defect rate of peeling off the flexible base substrate 200 is about 5%, and when the scanning base substrate 100 is irradiated once with laser light in the direction of the incident angle of 40 ° to 70 °, the defect rate of peeling off the flexible base substrate 200 is 42% to 47%; therefore, by increasing the number of times that the laser light is obliquely incident on the substrate 100, the yield of the lift-off can be significantly improved.
For the defects formed by the PSA glue, it can be seen from the experimental data of FIG. 5 that:
the flexible board 200 has a peeling defect rate of 5% to 11% when the scanning base board 100 is irradiated twice with laser light in a direction of an incident angle of 40 ° to 70 °, and the flexible board 200 has a peeling defect rate of 47% to 53% when the scanning base board 100 is irradiated once with laser light in a direction of an incident angle of 40 ° to 70 °; therefore, by increasing the number of times that the laser light is obliquely incident on the substrate 100, the yield of the lift-off can be significantly improved. Meanwhile, under the same incident condition, the larger the incident angle is, the smaller the defective rate of peeling the flexible substrate 200.
The defects formed by the needle scratch are known from the test data in fig. 6:
when the substrate 100 is irradiated and scanned once with laser light in a direction of an incident angle of 40 ° to 70 °, various types of scratches cause defective codes (GDS) when the all-solid-state semiconductor laser is lighted and confirmed; when the substrate 100 is irradiated and scanned twice with laser light in the direction of incidence angle of 40 ° to 70 °, the defect code (GDS) is caused only in the vertical direction and in the case where the scratch size is larger than 1937 μm along the Y axis in lighting confirmation of the all-solid-state semiconductor laser, and the defective rate of peeling of the flexible substrate 200 is small.
Further, in step S310 and step S330, scanning irradiation is performed at least twice with laser light along the short side of the substrate base plate 100.
By limiting the laser emitter to scan and irradiate along the short side of the substrate 100 during the first scanning irradiation and the second scanning irradiation, the linear defects on the substrate 100 can be more effectively separated from the projections on the flexible substrate 200 during multiple irradiation.
Further, the beam width of the laser was 800 μm.
When the substrate 100 is irradiated with the laser light by scanning at least twice, the following formula is followed:
P*ATT＝a*b*ED
wherein, P is the total power of the laser, ATT is the attenuation rate, and a is the beam width of the laser; b is the beam length of the laser and ED is the energy density.
As can be seen from the above formula, when the beam width of the laser is increased, the speed of the irradiation scan can be increased without changing the overlap ratio, so that the energy density is reduced, thereby shortening the pitch time.
The overlap ratio overlap in the present application is obtained by the following formula:
wherein, overlap is the coincidence rate, V is the moving speed of the objective table relative to the laser emitter, SA is the minor axis width, f is the frequency, when the laser emitter is the gas laser, SA is 0.4 + -0.01 mm, when the laser emitter is the solid laser, SA is 0.03 + -0.002 mm.
In the prior art, the width of the laser beam is 400 μm, and in the case of a coincidence of 75%, the flexible substrate 200 is irradiated with the laser beam 4 times in a complete scanning irradiation. The beam width of the laser in the application is 800 μm, the flexible substrate 200 is irradiated by the laser for 4 times, and the coincidence rate is kept at 75% in the prior art, and under the condition of one-time complete scanning irradiation, the speed of completing scanning irradiation by the laser is doubled, so that the peeling efficiency of the flexible substrate 200 is remarkably improved.
Further, before the step of irradiating the substrate 100 with the laser light by scanning at least two times, the method further includes the following steps:
s210, cleaning the surface of the substrate base plate 100;
s220, the substrate 100 is detected by an automatic optical detector.
The substrate 100 is cleaned in advance to reduce foreign matters and defects on the surface of the substrate 100, thereby improving the effect of laser peeling off the flexible substrate 200. The cleaning effect of the substrate 100 can be improved by cleaning the substrate, aiming at the defects of the incoming material residual glue dirt, the incoming material pit, the BP stab wound and the like.
Meanwhile, the substrate 100 is detected by an automatic optical detector, so that the position of the defect can be obtained before the laser scanning irradiation is utilized, and the accuracy of the subsequent laser scanning irradiation is improved.
Further, after the step of detecting the substrate 100 by using the automatic optical detector, the method further includes:
s230, judging that the size of the defect on the substrate 100 is greater than or equal to a preset threshold value, if so, enabling the substrate 100 to flow to a recovery station;
otherwise, the substrate 100 is irradiated with the laser light by at least two scanning shots.
When the size of the defect on the substrate 100 is greater than or equal to a preset threshold, the substrate 100 is moved to the recycling station, and then the substrate 100 is cleaned for the second time, so that the cleaning effect of the substrate 100 moved to the laser irradiation station is improved, the influence of the defect on the laser incidence is reduced, and the flexible substrate 200 is conveniently separated from the substrate 100. In the present application, the predetermined threshold is defined as 500 μm in combination with the defects common to the substrate 100.
The defect rate of the substrate 100 is obtained according to the following formula:
DPU＝D/U
p＝1-e-DPU
where DPU is the number of defects per unit, D is the number of defects, U is the number of units, and p is the defect rate.
For example, specification t8 LLO defect rate: 55 cun (6 sides): p-1-e-(3/6)39.35% 65 inches (3 side): p is 1-e-(3/3)＝63.21％。
Therefore, by pre-judging and screening the defect size, the substrate 100 with the defect size larger than the preset threshold is reflowed to the cleaning position for secondary cleaning, so as to reduce the defects on the surface of the substrate 100 and improve the separation effect of the flexible substrate 200 and the substrate 100 during laser irradiation. When the defect size of the substrate 100 is smaller than the predetermined threshold, the substrate 100 can be matched with the obliquely incident laser to improve the separation effect of the flexible substrate 200 and the substrate 100.
Further, the step of placing the substrate 100 on which the flexible substrate 200 is formed on the stage 300 includes the steps of:
s110, arranging a sacrificial layer on the substrate base plate 100;
s120, arranging a flexible substrate 200 on the sacrificial layer;
s130, the substrate board 100 is placed on the stage 300.
The sacrificial layer is made of amorphous silicon, and when laser is incident on the surface of the substrate 100, the sacrificial layer is subjected to laser processing in a high-temperature environment to generate hydrogen explosion, so that the flexible substrate 200 is separated from the substrate 100, and the flexible substrate 200 can be protected from damage caused by laser stripping.
A flexible substrate stripping device, which applies the flexible substrate stripping method in the first embodiment, comprises an object stage 300 and at least one laser emitter, wherein the object stage 300 is used for bearing a substrate 100 formed with a flexible substrate 200; a laser transmitter is located on the stage 300. When the flexible substrate 200 is peeled, the laser emitted from the laser emitter performs at least two scanning shots on the substrate 100, and the incident angle of the laser incident on the substrate 100 is 40 ° to 70 °. In the present application, one laser emitter is preferable.
Further, the flexible substrate stripping device further comprises a reflector, and the reflector is arranged on the object stage 300; the laser emitted by the laser emitter is reflected by the reflector and then enters the substrate 100 at an incident angle of 40 ° to 70 °.
Carry out two
A flexible substrate peeling method, referring to fig. 3, in the step of performing at least two scanning shots on the substrate 100 by using the laser, the method comprises the following steps:
s310, utilizing a first laser to enter the surface of the substrate 100 at a first incident angle, and performing a first scanning irradiation on the substrate 100, wherein the first incident angle is 7 ° to 10 °;
and S320, utilizing second laser to enter the surface of the substrate base plate 100 in a second incident angle direction, and performing second scanning irradiation on the substrate base plate 100, wherein the second incident angle is 40-70 degrees.
The original laser transmitter is used to be incident on the surface of the substrate 100 at an incident angle of 7 ° to 10 ° to perform the first scanning irradiation. Then, the surface of the substrate base plate 100 is incident at an incident angle of 40 ° to 70 ° with an additionally arranged laser emitter to perform scanning irradiation for the second time.
Because original laser emitter light source is huge and the required precision is better, therefore utilize extra supplementary laser emitter to carry out the slope to shine to substrate 100 to balanced refraction is to the irradiation region and the reflection loss on flexible substrate 200 surface, thereby compromises and shines effect and separation efficiency, in addition, utilizes original laser emitter and supplementary laser emitter to mutually support, thereby can reduce cost, also be convenient for later stage debugging and maintenance.
The method for peeling off the flexible substrate in this embodiment is the same as the method for peeling off the flexible substrate in the first embodiment, and specifically, the method for peeling off the flexible substrate in the embodiment may be referred to.
A flexible substrate stripping device, the flexible substrate stripping method in the second application embodiment, includes a stage 300 and at least one laser emitter, the stage 300 is used for bearing the substrate 100 formed with the flexible substrate 200; a laser transmitter is located on the stage 300. When the flexible substrate 200 is peeled, the laser emitted from the laser emitter performs at least two scanning shots on the substrate 100, and the incident angle of the laser incident on the substrate 100 is 40 ° to 70 °. In the present application, two laser transmitters are preferable.
Further, the flexible substrate stripping device further comprises a reflector, and the reflector is arranged on the object stage 300; the laser emitted by the laser emitter is reflected by the reflector and then enters the substrate 100 at an incident angle of 40 ° to 70 °.
The flexible substrate peeling apparatus and method provided by the present application are described in detail above, and the principle and the embodiment of the present application are explained in detail herein by applying specific examples, and the description of the above examples is only used to help understand the method and the core idea of the present application; meanwhile, for a person skilled in the art, according to the idea of the present application, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present application.
Claims (10)
1. A flexible substrate peeling method is characterized by comprising the following steps:
placing a substrate base plate formed with a flexible base plate on an objective table;
scanning and irradiating the substrate at least twice by using laser;
wherein, the incidence angle of the laser to the substrate base plate in at least one scanning irradiation is 40-70 degrees.
2. The method for peeling off a flexible substrate according to claim 1, wherein in the step of performing at least two scanning shots of the laser on the substrate, the method comprises the steps of:
utilizing first laser to enter the surface of the substrate base plate in a first incidence angle direction, and carrying out first scanning irradiation on the substrate base plate, wherein the first incidence angle is 7-10 degrees;
and utilizing a second laser to enter the surface of the substrate base plate at a second incidence angle direction, and carrying out second scanning irradiation on the substrate base plate, wherein the second incidence angle is 40-70 degrees.
3. The method for peeling off a flexible substrate according to claim 1, wherein in the step of performing at least two scanning shots of the laser on the substrate, the method comprises the steps of:
utilizing laser to enter the surface of the substrate base plate in a first incidence angle direction, and carrying out first scanning irradiation on the substrate base plate;
rotating the stage 160 ° to 175 ° about vertical;
utilizing laser to enter the surface of the substrate base plate in a first incidence angle direction, and carrying out secondary scanning irradiation on the substrate base plate;
wherein the first incident angle is 40 ° to 70 °.
4. The method of peeling off a flexible substrate according to claim 3,
scanning irradiation is performed at least twice along the short side of the substrate base plate with laser.
5. The method of peeling off a flexible substrate according to claim 1,
the beam width of the laser was 800 μm.
6. The method according to claim 1, further comprising, before the step of irradiating the substrate with the laser light by scanning at least twice, the steps of:
cleaning the surface of the substrate base plate;
the substrate is detected using an automated optical detector.
7. The method for peeling off a flexible substrate according to claim 6, further comprising, after the step of detecting a substrate by an automated optical detector:
judging whether the size of the defect on the substrate is larger than or equal to a preset threshold value, if so, enabling the substrate to flow to a recovery station;
otherwise, the substrate is irradiated with the laser light by at least two scanning shots.
8. The method for peeling off a flexible substrate according to claim 1, wherein the step of placing the base substrate on which the flexible substrate is formed on the stage comprises the steps of:
arranging a sacrificial layer on a substrate;
arranging a flexible substrate on the sacrificial layer;
the substrate base plate is placed on the stage.
9. A flexible substrate peeling apparatus to which the flexible substrate peeling method according to any one of claims 1 to 8 is applied, comprising:
an object stage for carrying a substrate base plate formed with a flexible base plate; and
at least one laser emitter located on the stage;
when the flexible substrate is peeled, the laser emitted by the laser emitter scans and irradiates the substrate base plate at least twice, and the incident angle of the laser incident on the substrate base plate is 40-70 degrees.
10. The flexible substrate peeling apparatus of claim 9, further comprising:
a mirror disposed on the stage;
laser emitted by the laser emitter is reflected by the reflector and then enters the substrate base plate at an incidence angle of 40-70 degrees.
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