CN114447150A - 一种光电探测器及其制备方法 - Google Patents
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Abstract
本发明提供了一种光电探测器及其制备方法,该方法包括:提供硅基底;在所述硅基底上制备非导电介质;在所述非导电介质的上表面依次设置石墨烯薄膜和金属电极,所述石墨烯薄膜具有缺口显露出所述非导电介质,所述金属电极位于所述缺口的两侧;在所述缺口内蒸镀金属钛薄膜,通过控制热处理温度,制备具有氧浓度梯度的钛氧化物薄膜。本发明通过通过在缺口内蒸镀金属钛薄膜,并且控制空气流速、氧化浓度和热处理温度,制备具有氧浓度梯度的钛氧化物薄膜,从而拓宽了宽谱吸收范围。由于蒸镀的金属薄膜具有与非导电介质良好的附着力,并且分布连续均匀,因此能够有效提高光电探测器的质量。
Description
技术领域
本发明涉及光电技术领域,尤其涉及一种光电探测器及其制备方法。
背景技术
二氧化钛(TiO2)作为一种研究最广泛的光电化学材料被广泛应用于光电探测器领域。但由于其较宽的带隙(约3.0-3.2eV),导致其只能吸收太阳光谱中能量占比不足5%的紫外区域。因此通过缩小TiO2的带隙可以有效提高其光的吸收能力。
目前,可以通过对TiO2纳米颗粒的金属/非金属元素掺杂、多离子掺杂、氢处理等,或者对低价钛盐TiH2或钛氧化物TiO、Ti2O3进行氧化退火等方法,降低TiO2的带隙宽度,从而达到拓宽TiO2的光谱吸收范围。但是,对钛氧化物的修饰、还原或氧化的过程,流程繁复工艺复杂,并且伴随较大的能源消耗和污染,所制备的依然是纳米颗粒,在进行光电探测器制备的过程中依然存在旋涂成膜团簇不均匀的问题。
发明内容
本发明的目的在于提供一种光电探测器及其制备方法,降低了制备成本,提高光电探测器的质量,拓宽了宽谱吸收范围。
为实现上述目的,第一方面,本发明提供了一种光电探测器的制备方法,包括:提供硅基底;
在所述硅基底上制备非导电介质;
在所述非导电介质的上表面依次设置石墨烯薄膜和金属电极,所述石墨烯薄膜具有缺口显露出所述非导电介质,所述金属电极位于所述缺口的两侧;
在所述缺口内蒸镀金属钛薄膜,通过控制空气流速、氧化浓度和热处理温度,制备具有氧浓度梯度的钛氧化物薄膜。
本发明的光电探测器的制备方法有益效果在于:在硅基底上依次设置非导电介质、石墨烯薄膜和金属电极,且石墨烯薄膜具有缺口显露出所述非导电介质,通过在缺口内蒸镀金属钛薄膜,并且控制空气流速、氧化浓度和热处理温度,制备具有氧浓度梯度的钛氧化物薄膜。该热氧工艺成本低廉,降低了生产成本,且这个制备过程简便污染极低,可高效制备出具有紫外-可见-红外宽谱吸收的连续钛氧化物薄膜,从而拓宽了宽谱吸收范围。由于蒸镀的金属薄膜具有与非导电介质良好的附着力,并且分布连续均匀,因此能够有效提高光电探测器的质量。
可选的,所述热处理温度的范围在100-400℃。其有益效果在于:通过将热处理温度设置在100-400℃,提高制备钛氧化物薄膜的可靠性。
可选的,在所述非导电介质的上表面依次设置石墨烯薄膜和金属电极,所述石墨烯薄膜具有缺口显露出所述非导电介质,所述金属电极位于所述缺口的两侧,包括:在所述非导电介质的上表面依次设置所述石墨烯薄膜和金属层,通过光刻所述金属层形成所述金属电极;通过光刻和氧化等离子体刻蚀在所述石墨烯薄膜刻上蚀出所述缺口。其有益效果在于:采用光刻工艺实现图形化,能够有效提高光电探测器的质量。
可选的,所述非导电介质的材料为二氧化硅、氮化硅、三氧化二铝、氟化镁中的一种。
在第二方面,本发明实施例提供一种光电探测器,包括:硅基底;非导电介质,设于所述硅基底;石墨烯薄膜,设于所述非导电介质,所述石墨烯薄膜具有缺口,所述缺口显露出所述非导电介质;金属电极设于所述石墨烯薄膜,且分别位于所述缺口的两侧;具有氧浓度梯度的钛氧化物薄膜,设于所述缺口。
本发明的光电探测器的有益效果在于:制备具有氧浓度梯度的钛氧化物薄膜,降低了生产成本,拓宽了宽谱吸收范围,有效提高光电探测器的质量。
可选的,所述非导电介质的材料为二氧化硅、氮化硅、三氧化二铝、氟化镁中的一种。
附图说明
图1为本发明提供的实施例光电探测器的制备方法的流程图;
图2为本发明提供的实施例在硅基底上形成设置所述石墨烯薄膜和金属层后的结构示意图;
图3为本发明提供的实施例形成金属电极后的结构示意图;
图4为本发明提供的实施例在石墨烯薄膜刻上蚀出缺口后的结构示意图;
图5为本发明提供的实施例蒸镀纳米级厚度的金属钛薄膜后的结构示意图;
图6为本发明提供的实施例光电探测器的结构示意图;
图7为本发明提供的实施例制备金属钛薄膜中氧化深度与其带隙宽度的对应关系图。
附图标记:
硅基底100、非导电介质200、石墨烯薄膜300、缺口301、金属层400、金属电极401、钛氧化物薄膜500。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚,下面将结合本发明的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例是本发明的一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。除非另外定义,此处使用的技术术语或者科学术语应当为本发明所属领域内具有一般技能的人士所理解的通常意义。本文中使用的“包括”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同,而不排除其他元件或者物件。
针对现有技术存在的问题,本发明的实施例提供了一种光电探测器的制备方法,参考图1所示,该制备方法包括:
S101:提供硅基底。
S102:在所述硅基底上制备非导电介质。
该步骤中,所述非导电介质的材料为二氧化硅、氮化硅、三氧化二铝、氟化镁中的一种。在本实施例中,采用的是二氧化硅作为非导电介质的材料。
S103:在所述非导电介质的上表面依次设置石墨烯薄膜和金属电极,所述石墨烯薄膜具有缺口显露出所述非导电介质,所述金属电极位于所述缺口的两侧。
具体的,结合图2所示,预先在所述非导电介质200的上表面依次设置所述石墨烯薄膜300和金属层400。结合图3所示,通过光刻所述金属层400形成所述金属电极401。结合图4所示,接着通过光刻和氧化等离子体刻蚀在所述石墨烯薄膜300刻上蚀出所述缺口301。
S104:在所述缺口内蒸镀金属钛薄膜,通过控制热处理温度,制备具有氧浓度梯度的钛氧化物薄膜。
该步骤中,结合图5所示,通过图形化工艺在金属电极400之间的所述缺口301内蒸镀纳米级厚度的金属钛薄膜。结合图6和图7所示所示,然后通过控制热处理温度,将其进行热氧处理。在本实施例中,热处理的温度可设置在100至400摄氏度之间的任意温度数值,制备具有氧浓度梯度的钛氧化物薄膜500。由于在热氧处理过程中,金属钛薄膜会首先在表面生产一层氧化物,随着氧化深度的逐渐增加,底部的金属层出现不完全氧化,从而整个体系中逐渐引入氧空位,实现氧浓度的梯度变化,从而达到逐渐降低钛氧化物薄膜500的带隙宽度,实现宽范围的光谱吸收。
在本实施例中,通过在缺口301内蒸镀金属钛薄膜,并且控制空气流速、氧化浓度和热处理温度,制备具有氧浓度梯度的钛氧化物薄膜500。该热氧工艺成本低廉,降低了生产成本,且这个制备过程简便污染极低,可高效制备出具有紫外-可见-红外宽谱吸收的连续钛氧化物薄膜500,从而拓宽了宽谱吸收范围。由于蒸镀的金属薄膜具有与非导电介质200良好的附着力,并且分布连续均匀,因此能够有效提高光电探测器的质量。
在本发明公开的又一个实施例中,一种光电探测器,参考图6所示,该光电探测器包括:硅基底100;非导电介质200,设于所述硅基底100;石墨烯薄膜300,设于所述非导电介质200,所述石墨烯薄膜300具有缺口301,所述缺口301显露出所述非导电介质200;金属电极400设于所述石墨烯薄膜300,且分别位于所述缺口301的两侧;具有氧浓度梯度的钛氧化物薄膜500,设于所述缺口301。
在本实施例中,通过制备具有氧浓度梯度的钛氧化物薄膜500,降低了生产成本,拓宽了宽谱吸收范围,有效提高光电探测器的质量。
可选的,所述非导电介质200的材料为二氧化硅、氮化硅、三氧化二铝、氟化镁中的一种。
以上所述,仅为本申请实施例的具体实施方式,但本申请实施例的保护范围并不局限于此,任何在本申请实施例揭露的技术范围内的变化或替换,都应涵盖在本申请实施例的保护范围之内。因此,本申请实施例的保护范围应以所述权利要求的保护范围为准。
Claims (6)
1.一种光电探测器的制备方法,其特征在于,包括:
提供硅基底;
在所述硅基底上制备非导电介质;
在所述非导电介质的上表面依次设置石墨烯薄膜和金属电极,所述石墨烯薄膜具有缺口显露出所述非导电介质,所述金属电极位于所述缺口的两侧;
在所述缺口内蒸镀金属钛薄膜,通过控制热处理温度,制备具有氧浓度梯度的钛氧化物薄膜。
2.根据权利要求1所述的制备方法,其特征在于,所述热处理温度的范围在100-400℃。
3.根据权利要求2所述的制备方法,其特征在于,在所述非导电介质的上表面依次设置石墨烯薄膜和金属电极,所述石墨烯薄膜具有缺口显露出所述非导电介质,所述金属电极位于所述缺口的两侧,包括:
在所述非导电介质的上表面依次设置所述石墨烯薄膜和金属层,通过光刻所述金属层形成所述金属电极;
通过光刻和氧化等离子体刻蚀在所述石墨烯薄膜刻上蚀出所述缺口。
4.根据权利要求3所述的制备方法,其特征在于,所述非导电介质的材料为二氧化硅、氮化硅、三氧化二铝、氟化镁中的一种。
5.一种光电探测器,其特征在于,包括:
硅基底;
非导电介质,设于所述硅基底;
石墨烯薄膜,设于所述非导电介质,所述石墨烯薄膜具有缺口,所述缺口显露出所述非导电介质;
金属电极设于所述石墨烯薄膜,且分别位于所述缺口的两侧;
具有氧浓度梯度的钛氧化物薄膜,设于所述缺口。
6.根据权利要求5所述的光电探测器,其特征在于,所述非导电介质的材料为二氧化硅、氮化硅、三氧化二铝、氟化镁中的一种。
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