KR100937799B1 - 염료 감응형 태양전지용 복층구조 이산화티탄 전극 및 그제조방법과 이를 사용하여 제조된 염료 감응형 태양전지 - Google Patents
염료 감응형 태양전지용 복층구조 이산화티탄 전극 및 그제조방법과 이를 사용하여 제조된 염료 감응형 태양전지 Download PDFInfo
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- KR100937799B1 KR100937799B1 KR1020080030478A KR20080030478A KR100937799B1 KR 100937799 B1 KR100937799 B1 KR 100937799B1 KR 1020080030478 A KR1020080030478 A KR 1020080030478A KR 20080030478 A KR20080030478 A KR 20080030478A KR 100937799 B1 KR100937799 B1 KR 100937799B1
- Authority
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- South Korea
- Prior art keywords
- titanium dioxide
- dye
- sensitized solar
- electrode
- solar cell
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- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 title claims abstract description 230
- 239000004408 titanium dioxide Substances 0.000 title claims abstract description 113
- 238000000034 method Methods 0.000 title claims abstract description 23
- 239000010410 layer Substances 0.000 claims abstract description 41
- 230000008021 deposition Effects 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 239000011247 coating layer Substances 0.000 claims abstract description 17
- 238000004519 manufacturing process Methods 0.000 claims abstract description 15
- 239000003792 electrolyte Substances 0.000 claims abstract description 11
- 239000002245 particle Substances 0.000 claims abstract description 9
- 238000000151 deposition Methods 0.000 claims description 37
- 238000005245 sintering Methods 0.000 claims description 16
- 239000000084 colloidal system Substances 0.000 claims description 14
- 238000010335 hydrothermal treatment Methods 0.000 claims description 14
- 239000002904 solvent Substances 0.000 claims description 9
- 229920003171 Poly (ethylene oxide) Polymers 0.000 claims description 8
- 238000005546 reactive sputtering Methods 0.000 claims description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000011230 binding agent Substances 0.000 claims description 5
- 239000002202 Polyethylene glycol Substances 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 229920001223 polyethylene glycol Polymers 0.000 claims description 4
- 238000005054 agglomeration Methods 0.000 claims description 3
- 230000002776 aggregation Effects 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 2
- 229910021641 deionized water Inorganic materials 0.000 claims description 2
- 238000005137 deposition process Methods 0.000 claims description 2
- 239000011148 porous material Substances 0.000 abstract description 9
- 238000001179 sorption measurement Methods 0.000 abstract description 7
- 230000035515 penetration Effects 0.000 abstract description 6
- 238000006243 chemical reaction Methods 0.000 description 14
- 230000000052 comparative effect Effects 0.000 description 10
- 238000000445 field-emission scanning electron microscopy Methods 0.000 description 8
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 8
- 238000002834 transmittance Methods 0.000 description 8
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- 239000002243 precursor Substances 0.000 description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 239000000693 micelle Substances 0.000 description 4
- 239000002105 nanoparticle Substances 0.000 description 4
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000007606 doctor blade method Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 229910052740 iodine Inorganic materials 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000002736 nonionic surfactant Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920002239 polyacrylonitrile Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- NXQMFCDBVYUXQP-UHFFFAOYSA-N C1=CN=CN1.[I+] Chemical compound C1=CN=CN1.[I+] NXQMFCDBVYUXQP-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 125000002573 ethenylidene group Chemical group [*]=C=C([H])[H] 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000131 polyvinylidene Polymers 0.000 description 1
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000006479 redox reaction Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229920000428 triblock copolymer Polymers 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
- H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Hybrid Cells (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
기저압력 (Base pressure) (mTorr) | < 5ⅹ10-7 | Magnetron DC power (W) | 300 |
작동압력 (Working pressure) (mTorr) | 10 ~ 30 | ICP power (RF coil) (W) | 400 |
기판온도 | 비가열 | 증착속도 (nm/min) | 30 ~ 40 |
비표면적(m2/g) | 기공크기(nm) | |||
소결 전 | 소결 후 | 소결 전 | 소결 후 | |
수열처리 함 | 347 | 304 | 3.9 | 11.5 |
수열처리 안함 | 386 | 104 | 3.7 | 8.1 |
A | B | C | |
Area (cm2) | 0.16 | 0.16 | 0.16 |
V oc (V) | 0.747 | 0.692 | 0.738 |
J sc (mA/cm2) | 5.571 | 0.362 | 3.483 |
FF | 0.683 | 0.548 | 0.680 |
EFF (%) | 2.832 | 0.137 | 1.750 |
실시예 | 비교예 1 | 비교예 2 | |
Area (cm2) | 0.16 | 0.16 | 0.16 |
V oc (V) | 0.723 | 0.651 | 0.738 |
J sc (mA/cm2) | 6.5387 | 4.659 | 3.483 |
FF | 0.667 | 0.699 | 0.680 |
EFF (%) | 3.153 | 2.123 | 1.750 |
Claims (9)
- 투명전도성 기판 상에 형성되며 광감응성 염료층이 투명전도성 기판과 대향하는 면에 흡착되는 염료 감응형 태양전지용 이산화티탄 전극에 있어서,이산화티탄 증착층; 및상기 증착층 상에 적층되는 메조기공성 이산화티탄 입자 코팅층을 포함하여 이루어지는 염료 감응형 태양전지용 복층구조 이산화티탄 전극.
- 제1항에 있어서,상기 증착층의 두께는 10 nm ~ 20 ㎛ 인 것을 특징으로 하는 염료 감응형 태양전지용 복층구조 이산화티탄 전극.
- 제1항에 있어서,상기 코팅층의 두께는 50 nm ~ 50 ㎛ 인 것을 특징으로 하는 염료 감응형 태양전지용 복층구조 이산화티탄 전극.
- (S1) 이산화티탄을 기판 상에 증착하여 이산화티탄 증착층을 제조하는 단계;(S2) 메조기공성 이산화티탄 콜로이드를 수열처리하고 용매와 혼합하여 메조기공성 이산화티탄 페이스트를 준비하는 단계; 및(S3) 상기 메조기공성 이산화티탄 페이스트를 상기 증착층에 도포하고 소결 시켜, 메조기공성 이산화티탄 입자가 서로 응집되어 형성된, 메조기공을 갖는 코팅층을 제조하는 단계를 포함하는 염료 감응형 태양전지용 복층구조 이산화티탄 전극의 제조방법.
- 제4항에 있어서,상기 (S1) 단계의 증착 공정은 반응성 스퍼터링 증착법으로 수행되는 것을 특징으로 하는 염료 감응형 태양전지용 복층구조 이산화티탄 전극의 제조방법.
- 제4항에 있어서,상기 (S2) 단계의 수열처리는 80 ~ 250 ℃에서 1시간 ~ 1 주일동안 수행되는 것을 특징으로 하는 염료 감응형 태양전지용 복층구조 이산화티탄 전극의 제조방법.
- 제4항에 있어서,상기 (S2) 단계의 용매는 탈이온수, 에탄올 또는 이들의 혼합물인 것을 특징으로 하는 염료 감응형 태양전지용 복층구조 이산화티탄 전극의 제조방법.
- 제4항 내지 제7항 중 어느 한 항에 있어서,상기 (S2) 단계에서 폴리에틸렌글리콜, 폴리에틸렌옥사이드 또는 이들의 혼합물인 바인더를 더 포함하여 페이스트를 준비하는 것을 특징으로 하는 염료 감응 형 태양전지용 복층구조 이산화티탄 전극의 제조방법.
- 투명전도성 기판; 상기 투명전도성 기판의 일면에 형성된 이산화티탄 전극; 상기 이산화티탄 전극의 상기 투명전도성 기판과 대향하는 면에 흡착된 광감응성 염료층; 상기 광감응성 염료층의 상기 이산화티탄 전극과 대향하는 면에 구비된 상대전극 및 상기 광감응성 염료층과 상기 상대전극 사이에 개재된 전해질을 포함하는 염료 감응형 태양전지에 있어서,상기 이산화티탄 전극은 상기 제1항 내지 제3항 중 어느 한 항에 따른 복층구조 이산화티탄 전극인 것을 특징으로 하는 염료 감응형 태양전지.
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KR1020080030478A KR100937799B1 (ko) | 2008-04-01 | 2008-04-01 | 염료 감응형 태양전지용 복층구조 이산화티탄 전극 및 그제조방법과 이를 사용하여 제조된 염료 감응형 태양전지 |
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KR101038987B1 (ko) | 2010-03-29 | 2011-06-03 | 한국세라믹기술원 | 산란층을 이용한 염료감응형 태양전지의 제조방법 |
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KR101347702B1 (ko) * | 2011-12-12 | 2014-01-10 | 포항공과대학교 산학협력단 | 계층구조 이산화티탄 분말 제조방법 및 이를 이용한 양자점 감응형 태양전지 제조방법 |
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KR20050072997A (ko) * | 2004-01-08 | 2005-07-13 | 한국전기연구원 | 유ㆍ무기 복합 태양전지 및 그 제조방법 |
JP2007250717A (ja) | 2006-03-15 | 2007-09-27 | Gyoseiin Genshino Iinkai Kakuno Kenkyusho | シリコン量子点活性化太陽電池のシリコン量子点活性化層の製造方法 |
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KR20050072997A (ko) * | 2004-01-08 | 2005-07-13 | 한국전기연구원 | 유ㆍ무기 복합 태양전지 및 그 제조방법 |
JP2007250717A (ja) | 2006-03-15 | 2007-09-27 | Gyoseiin Genshino Iinkai Kakuno Kenkyusho | シリコン量子点活性化太陽電池のシリコン量子点活性化層の製造方法 |
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KR101038987B1 (ko) | 2010-03-29 | 2011-06-03 | 한국세라믹기술원 | 산란층을 이용한 염료감응형 태양전지의 제조방법 |
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