CN114447140A - 一种单晶太阳能电池片的扩散工艺 - Google Patents
一种单晶太阳能电池片的扩散工艺 Download PDFInfo
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Abstract
本发明涉及太阳能电池生产领域。一种单晶太阳能电池片的扩散工艺，将硅片进行制绒处理，装入扩散电阻炉；将扩散炉炉腔内的温度升高至第一设定温度，稳定后通入氮气和氧气进行氧化反应；将扩散炉炉腔内的温度设置成三种不同的温度，通入氧气、三氯氧磷和氮气，三次扩散；将扩散炉炉腔内的温度升高至第五设定温度，对磷原子进行高温推进。本发明主要对硅片进行三次扩散，分别制备出N11区、N+12区和N++13区PN结结构，并且还通过控制磷源的流量改变其最外层杂质磷的扩散浓度，形成重掺杂的N++13区，与其正电极形成较为理想的欧姆接触，从而使得短路电流增大。
Description
技术领域
本发明涉及太阳能电池生产领域。
背景技术
作为一种新型的绿色电池，单晶太阳能电池片利用光生伏特效应可直接将太阳辐射能转化电能，具有较高的光转换效率、较低的成本和较为简单的工艺流程等优点，在光伏行业中得到了迅速的发展。现近多数生产单晶太阳能电池片工艺过程主要经过制绒、扩散、碱抛、氧化、镀膜以及丝网等流程，其扩散作为最重要一道的工序之一，主要是在硅片表面扩散沉积形成PN结，通过控制硅片表面扩散沉积掺杂元素的浓度变化量，制造出多层的PN结结构，形成多层次掺杂元素的浓度差，从而降低前表面复合和光生载流子的分离，提高硅片的内建场电压。现今多数的扩散工艺均采用不同压力制备多层的PN结结构，但在不同的压力条件下制造出多层的PN结结构，需要对硅片进行多次的降压处理，由于扩散工艺本身就是采用低压扩散，进一步降低炉内压力，很容易导致硅片表面掺杂元素的浓度增大、PN结加深，从而产生扩散区域能带收缩、晶格畸变和硅片内部缺陷增加等问题，并且扩散炉长时间的低压力工作，会使得炉子的气密性变差和使用寿命降低。
发明内容
本发明所要解决的技术问题是：如何在低压扩散过程中避免扩散区域能带收缩、晶格畸变和硅片内部缺陷增加等问题。
本发明所采用的技术方案是：一种单晶太阳能电池片的扩散工艺，包括如下步骤
步骤一、将放置有硅片的石英舟载体放入扩散炉中，通入氮气对炉腔内部进行清洗，防止空气中的灰层和杂质气体影响扩散工艺的结果；
步骤二、将扩散炉腔内的温度升高至第一设定温度即780 ℃，继续通入氮气，再次对炉腔内部进行清洗；
步骤三、将扩散炉炉腔内温度保持在第一温度，并向炉内通入氮气和氧气，开始对硅片进行氧化反应，反应时间590 – 620 s s；
步骤四、将扩散炉炉腔内的温度升高至第二设定温度即795 – 815 ℃，并保持第二设定温度，通入氧气、三氯氧磷和氮气，进行第一次扩散反应，反应时间200 – 350 s ，压力保持100 – 120 mbar；
步骤五、将扩散炉炉腔内的温度降低15 ℃至第三设定温度即780 – 800 ℃，并保持第三设定温度，通入氧气、三氯氧磷和氮气，进行第二次扩散反应，反应时间200 – 350 s ，压力保持100 – 120 mbar；
步骤六、将扩散炉炉腔内的温度降低15 ℃至第四设定温度即765 – 785 ℃，并保持第四设定温度，通入氧气、三氯氧磷和氮气，进行第三次扩散反应，反应时间200 – 350 s ，压力保持100 – 120 mbar；
步骤七、将扩散炉炉腔内的温度升高115℃至第五设定温度即880 – 900 ℃，并保持第五设定温度，通入氮气，对磷原子进行高温推进，高温推进时间为1600 – 1800 s，压力保持100 – 120 mbar；
步骤八、对扩散炉炉腔进行降温即降温到750℃，通入氧气和氮气，进行氧化反应；
步骤九、出炉。
升温和降温的速度均为0.18 – 0.22 ℃/S。升温和降温太快会导致硅片内的均匀性较差，并且降温过快还会使得硅片表面析出多余的杂质成为捕获电子的陷阱，提高表面复合，影响硅片的效率和质量。
步骤三中氧气的流量为590 – 650 ml/min，主要目的在于硅片表面可以生成一层均匀的SiO2氧化膜薄层，使其在扩散反应时，该表面的掺杂元素沉积更加均匀。步骤四-步骤六氧气的通入量均为710–730ml/min，主要目的能够参与POCl3的反应，分解POCl3反应生成的PCl5，避免其对硅片表面的腐蚀破坏，析出硅表面的部分金属杂质。
步骤四三氯氧磷的流量为700 – 850 ml/min，步骤五三氯氧磷的流量为650 –750 ml/min，上述步骤六三氯氧磷的流量为550 – 650ml/min，步骤四–步骤六磷源的流量均逐渐降低，其目的主要减少硅表面磷原子的掺杂浓度，有效避免磷源的浪费，降低扩散工艺成本。
步骤一和步骤二中氮气流量为5000 sccm，步骤三中氮气流量为2000sccm，步骤四中氮气流量为1000-1100sccm，步骤五中氮气流量为900-1000sccm，步骤六中氮气流量为800-900sccm，步骤七中氮气流量为2000sccm，步骤八中氮气流量为2000sccm，步骤九中氮气流量为500sccm。
本发明的有益效果是：通过改变通源部的温度，对硅片进行多次扩散，制备出多层次的PN结结构，并且还通过控制磷源的流量改变其最外层杂质磷的扩散浓度，形成重掺杂的N++区域，与其正电极形成较为理想的欧姆接触，从而使得短路电流增大。同时还降低前表面复合和光生载流子的分离，使得开路电压提高，增加单晶电池片的转换效率，并且还可以有效避免炉内过低压带来的危害。
具体实施方式
本发明主要提供制备一种单晶太阳能电池片的扩散工艺，其主要通过改变通源部的温度，对硅片进行多次扩散，制备出多层次的PN结结构，并且还通过控制磷源的流量改变其最外层杂质磷的扩散浓度，形成重掺杂的N++13区域，与其正电极形成较为理想的欧姆接触，从而使得短路电流增大。同时还降低前表面复合和光生载流子的分离，使得开路电压提高，增加单晶电池片的转换效率，并且还可以有效避免过低压带来的危害。
三次扩散反应在硅表面分别形成N11、N+12和N++13 PN结结构，其中三次扩散反应所需要的温度和所需磷源的流量均逐渐减小，不仅可以有效避免PN结的结深过深和最外层的N++13表面浓度过高，还可以减小N11和N+12 PN结之间掺杂浓度，增加太阳能电池的短波响应，同时还增加了该两层次的PN结磷掺杂的浓度差，有利于光生载流子的收集和分离。
实例1
表1示出了本实例1的扩散工艺。本实例的扩散工艺主要保持通源部的压力不变（压力值为100 mbar），通过三次调节扩散温度控制PN结的结深和掺杂浓度，其三次扩散的温度分为800 ℃、785 ℃和770 ℃，上述温度变化可以使得硅片表面N11区和N+12区PN结之间掺杂浓度减小，增加太阳能电池的短波响应，还增加了该层次PN结之间磷掺杂的浓度差，有利于光生载流子的收集和分离。三次扩散温度逐渐降低，使得硅表面的PN结的掺杂浓度从内到外依次增加，从而增加电池片的内建电场电压，降低前表面复合和光生载流子的分离，提高开路电压。最后一次降温处理，使得硅表面形成重掺杂的N++13区域，与其正电极形成较为理想的欧姆接触，从而使得短路电流增大，提高单晶电池片的转换效率。
同时为避免硅片表面的掺杂元素的浓度增大和PN结过深，本实例1扩散工艺通过调节氮气和磷源的流量来控制，其氮气的流量分别为1000 sccm、900 sccm和800 sccm，磷源的流量分别为750 sccm、650 sccm和550 sccm，三次扩散氧气的流量均为720 sccm，为保证三次扩散后，硅片的均匀性一致，炉口的温度均比炉中和炉尾高2 ℃。三次扩散时间分别为330 s、250 s和250 s，其目的保证三次扩散不同温度下，通源部反应所需的时间一致。
表1 实例1扩散工艺
实例2
表2示出了本实例2的扩散工艺。本实例的扩散工艺主要保持通源部的压力不变（压力值为100 mbar），通过三次调节扩散温度控制PN结的结深和掺杂浓度，其三次扩散的温度分为810℃、795℃和780℃，上述温度变化可以使得硅片表面N11区和N+12区PN结之间掺杂浓度减小，增加太阳能电池的短波响应，还增加了该层次PN结之间磷掺杂的浓度差，有利于光生载流子的收集和分离。三次扩散温度逐渐降低，使得硅表面的PN结的掺杂浓度从内到外依次增加，从而增加电池片的内建电场电压，降低前表面复合和光生载流子的分离，提高开路电压。最后一次降温处理，使得硅表面形成重掺杂的N++13区域，与其正电极形成较为理想的欧姆接触，从而使得短路电流增大，提高单晶电池片的转换效率。
同时为避免硅片表面的掺杂元素的浓度增大和PN结过深，本实例2扩散工艺通过调节氮气和磷源的流量来控制，其氮气的流量分别为1100 sccm、1000 sccm和900 sccm，磷源的流量分别为800 sccm、700 sccm和600 sccm，三次扩散氧气的流量均为720 sccm，为保证三次扩散后，硅片的均匀性一致，炉口的温度均比炉中和炉尾高2 ℃。三次扩散时间分别为330 s、250 s和250s，其目的保证三次扩散不同温度下，磷源反应的所需的时间一致。
本发明主要提供一种制备单晶太阳能电池片的扩散工艺，其主要通过改变通源部的温度，对硅片进行多次扩散，制备出多层次的PN结结构，并且还通过控制磷源的流量改变其最外层杂质磷的扩散浓度，形成重掺杂的N++13区域，与其正电极形成较为理想的欧姆接触，从而使得短路电流增大。同时还降低前表面复合和光生载流子的分离，使得开路电压提高，增加单晶电池片的转换效率，并且还可以有效避免炉内过低压带来的危害。
Claims (5)
1.一种单晶太阳能电池片的扩散工艺，其特征在于：包括如下步骤
步骤一、将放置有硅片的石英舟载体放入扩散炉中，通入氮气对炉腔内部进行清洗，防止空气中的灰层和杂质气体影响扩散工艺的结果；
步骤二、将扩散炉腔内的温度升高至第一设定温度即780 ℃，继续通入氮气，再次对炉腔内部进行清洗；
步骤三、将扩散炉炉腔内温度保持在第一温度，并向炉内通入氮气和氧气，开始对硅片进行氧化反应，反应时间590 – 620 s；
步骤四、将扩散炉炉腔内的温度升高至第二设定温度即795 – 815 ℃，并保持第二设定温度，通入氧气、三氯氧磷和氮气，进行第一次扩散反应，反应时间200 – 350 s，压力保持100 – 120 mbar；
步骤五、将扩散炉炉腔内的温度降低15 ℃至第三设定温度即780 – 800 ℃，并保持第三设定温度，通入氧气、三氯氧磷和氮气，进行第二次扩散反应，反应时间200 – 350 s，压力保持100 – 120 mbar s；
步骤六、将扩散炉炉腔内的温度降低15 ℃至第四设定温度即765 – 785 ℃，并保持第四设定温度，通入氧气、三氯氧磷和氮气，进行第三次扩散反应，反应时间200 – 350 s，压力保持100 – 120 mbar s；
步骤七、将扩散炉炉腔内的温度升高115℃至第五设定温度即880 – 900 ℃，并保持第五设定温度，通入氮气，对磷原子进行高温推进，高温推进时间为1600 – 1800 s ，压力保持100 – 120 mbar；
步骤八、对扩散炉炉腔进行降温即降温到750℃，通入氧气和氮气，进行氧化反应；
步骤九、出炉。
2.根据权利要求1所述的一种单晶太阳能电池片的扩散工艺，其特征在于：升温和降温的速度均为0.18 – 0.22 ℃/S。
3.根据权利要求1所述的一种单晶太阳能电池片的扩散工艺，其特征在于：步骤三中氧气的流量为590 – 650 ml/min，步骤四-步骤六氧气的通入量均为710–730ml/min。
4.根据权利要求1所述的一种单晶太阳能电池片的扩散工艺，其特征在于：步骤四三氯氧磷的流量为700 – 850 ml/min，步骤五三氯氧磷的流量为650 – 750 ml/min，上述步骤六三氯氧磷的流量为550 – 650ml/min，步骤四– 步骤六磷源的流量均逐渐降低，其目的主要减少硅表面磷原子的掺杂浓度，有效避免磷源的浪费，降低扩散工艺成本。
5.根据权利要求1所述的一种单晶太阳能电池片的扩散工艺，其特征在于：步骤一和步骤二中氮气流量为5000 sccm，步骤三中氮气流量为2000sccm，步骤四中氮气流量为1000-1100sccm，步骤五中氮气流量为900-1000sccm，步骤六中氮气流量为800-900sccm，步骤七中氮气流量为2000sccm，步骤八中氮气流量为2000sccm，步骤九中氮气流量为500sccm。
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