CN114420794A - 一种改善el黑边的方法 - Google Patents
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Abstract
本发明属于单晶硅电池技术领域，具体涉及一种改善EL黑边的方法，选择性发射极SE技术在绘图时，对两侧边缘的三根细栅线进行双线雕刻。目前选择性发射极(SE)技术在绘图时，细栅线均采用单线进行雕刻，本发明设计的新图形是通过把边缘三根细栅线进行双线雕刻，在不影响产能的情况下，可以有效降低EL黑边的问题，减少不良品的产生，提升良率。本发明设计方案在现有激光掺杂设备上均是可完全兼容，不会增加成本，并且在工业化生产过程中稳定性好，不会影响正常生产。
Description
技术领域
本发明属于单晶硅电池技术领域，具体涉及一种改善EL黑边的方法。
背景技术
随着晶硅电池科学与技术的发展，PERC电池已经逐渐成为市场主流，在未来几年的发展中PERC电池及PERC叠加新技术电池会逐渐成熟，走向工业化生产。PERC叠加选择性发射极(SE)技术是一种有效的提升电池效率的技术路径，这种电池结构，金属化区域浓扩散区结深大，烧结过程中金属等杂质不易进入耗尽区形成深能级，反向漏电小，并联电阻高；光照区域掺杂浓度低，可以减少电池发射极和表面的少子复合，少子寿命高，短波响应好，短路电流高；轻掺杂和重掺杂形成高低结，对发射极形成的少子形成势垒，将少子推向PN结(类似铝背场的作用)，选择性发射极可以增加光生载流子，降低暗电流，提高开路电压。
发明内容
本发明目的在于克服现有技术的不足，提供一种改善EL黑边的方法。
为达到上述目的，本发明采用的技术方案如下：
一种改善EL黑边的方法，步骤包括：在选择性发射极(SE)技术在绘图时，对两侧边缘的三根细栅线进行双线雕刻。
较佳地，双线雕刻的两根细栅线之间的凹坑的宽度为0.1～0.5mm，深度为50～350nm。
优选地，两边缘侧的凹坑与硅片侧边缘的距离为2～8mm。
与现有技术相比，本发明的优点和积极效果如下：
本发明设计的新图形是将SE图形的边缘区域进行双线雕刻，将边缘细栅线进行双线雕刻，此种方法可以有效的将SE区域加宽，更有利于丝网印刷时浆料的接触，增大接触面积，提高接触电阻，使其边缘区域更亮，大大降低EL边缘发黑的问题。
附图说明
图1选择性发射极(SE)技术在绘图时，边缘细栅线的常规图形设计方案；
图2选择性发射极(SE)技术在绘图时，边缘细栅线的新图形设计方案。
具体实施方式
为了使本发明的目的、技术方案及优点更加清楚明白，以下则结合实施例，对本发明进行进一步详细说明。本发明的附加方面和优点将在下面的描述中部分给出，部分将从下面的描述中变得明显，或通过本发明的实践了解到。应当理解，以下描述仅仅用以解释本发明，并不用于限定本发明。
本发明一种改善EL黑边的方法对激光SE结构制作中的边缘细栅线进行了优化设计，减少了EL黑边的问题，与如图1所示的常规图形设计方案相比较，本发明边缘细栅线的新图形设计方案如图2所示；
目前选择性发射极(SE)技术在绘图时，细栅线均采用单线进行雕刻，本发明设计的新图形是通过把边缘三根细栅线进行双线雕刻，在不影响产能的情况下，可以有效降低EL黑边的问题，减少不良品的产生，提升良率。本发明设计方案在现有激光掺杂设备上均是可完全兼容，不会增加成本，并且在工业化生产过程中稳定性好，不会影响正常生产。
上述实施例仅是本发明的较优实施方式，凡是依据本发明的技术实质对以上实施例所做的任何简单修饰、修改及替代变化，均属于本发明技术方案的范围内。
Claims (3)
1.一种改善EL黑边的方法，其特征在于，选择性发射极SE技术在绘图时，对两侧边缘的三根细栅线进行双线雕刻。
2.根据权利要求1所述的一种改善EL黑边的方法，其特征在于，双线雕刻的两根细栅线之间的凹坑的宽度为0.1～0.5mm，深度为50～350nm。
3.根据权利要求2所述的一种改善EL黑边的方法，其特征在于，两边缘侧的凹坑与硅片侧边缘的距离为2～8mm。
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102222729A (zh) * | 2011-05-31 | 2011-10-19 | 浙江晶科能源有限公司 | 一种改善太阳电池前电极电镀质量的方法 |
| CN107093636A (zh) * | 2017-03-03 | 2017-08-25 | 广东爱康太阳能科技有限公司 | P型perc双面太阳能电池及其制备方法、组件和系统 |
| JP2019071446A (ja) * | 2014-05-27 | 2019-05-09 | サンパワー コーポレイション | こけら葺き状太陽電池モジュール |
| CN111668339A (zh) * | 2020-04-23 | 2020-09-15 | 天津爱旭太阳能科技有限公司 | 一种太阳能电池正面电极对位印刷方法及制备方法 |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102222729A (zh) * | 2011-05-31 | 2011-10-19 | 浙江晶科能源有限公司 | 一种改善太阳电池前电极电镀质量的方法 |
| JP2019071446A (ja) * | 2014-05-27 | 2019-05-09 | サンパワー コーポレイション | こけら葺き状太陽電池モジュール |
| CN107093636A (zh) * | 2017-03-03 | 2017-08-25 | 广东爱康太阳能科技有限公司 | P型perc双面太阳能电池及其制备方法、组件和系统 |
| CN111668339A (zh) * | 2020-04-23 | 2020-09-15 | 天津爱旭太阳能科技有限公司 | 一种太阳能电池正面电极对位印刷方法及制备方法 |
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