CN110600561A - 一种ibc电池叉指状pn结的电池结构及其制备方法 - Google Patents

一种ibc电池叉指状pn结的电池结构及其制备方法 Download PDF

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CN110600561A
CN110600561A CN201910812001.9A CN201910812001A CN110600561A CN 110600561 A CN110600561 A CN 110600561A CN 201910812001 A CN201910812001 A CN 201910812001A CN 110600561 A CN110600561 A CN 110600561A
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张敏
刘飞
王冬冬
张志郢
常纪鹏
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Yellow River Hydropower Photovoltaic Industry Technology Co ltd
Huanghe Hydropower Development Co Ltd
Photovoltaic Industry Technology Branch of Qinghai Huanghe Hydropower Development Co Ltd
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Huanghe Hydropower Development Co Ltd
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Abstract

本发明公开了一种IBC电池叉指状PN结的电池结构及其制备方法。所述电池结构依次包括：氮化硅减反射膜层、二氧化硅薄膜层一、N型单晶硅片衬底、叉指状P区和N区层、二氧化硅薄膜层二、三氧化二铝薄膜层。制备方法为：N型单晶硅片衬底背面采用印刷、皮秒激光掺杂的方式掺杂，将未印刷的区域进行磷掺杂；采用氧化的方式，生长二氧化硅薄膜；沉积本征非晶硅层；沉积氮化硅减反射薄膜；沉积三氧化二铝薄膜；开孔，将铝浆印刷在背面，构成金属电极。本发明减少了制造工序，降低了IBC电池的制造成本，并且可以实现IBC电池背面高质量PN的制备，实现IBC电池内部电流的极大输出。

Description

一种IBC电池叉指状PN结的电池结构及其制备方法
技术领域
本发明涉及一种IBC电池叉指状PN结的电池结构及其制备方法，属于太阳能电池技术领域。
背景技术
近几年来，在国家光伏政策的驱动下，光伏发电装机量迅速增长，光伏技术得以迅速发展，越来越多的光伏企业加大对IBC电池技术的研发投入，天合、海润、晶澳都在大力进行技术开发，IBC由于优异的电池技术成为高效电池技术开发的重点之一，由此可见N型电池技术在全球光伏市场的优势愈加明显，特别是光伏发电平价上网的急迫需求，迫使不断地技术创新，以最大程度降低光伏发电成本，一步步实现平价上网。那么针对性能优异的IBC电池，如何降低IBC电池的开发成本，成为目前以及未来N型高效电池技术开发的目标。日前最新报道天合光能自主研发的6英寸面积(243.18cm2)N型单晶全背电极太阳电池(IBC)效率高达25.04％(全面积)，其中电池开路电压高达715.6mV。测试结果已经JET独立测试认证。足以见证IBC电池技术将成为N型高效电池开发的重点之一，市场前景可观。
目前IBC电池的制备工艺流相对较多，设备昂贵，电池制造成本高。IBC电池由于正面没有栅线遮挡，电池的短路电流较常规电池有大约7％的提升，AM1.5G条件下其短路电流密度一般会超过41mA/cm2，并且电池的发射极和背表面场均在背面，前表面可以更加灵活地设计让光学损失和表面复合降到最低，提升电池的开路电压和填充因子；同时电池的开路电压超过680mV，短路电流41.5mA/cm2，电池温度系数低，无LID，PID衰减小于1％，无热斑现象，可靠性优异；IBC展现出良好的电学性能及可靠性能，然而在工业化生产时，仍然面临生产成本高，与现有常规的PERC产线兼容性差，设备投资成本高等特点，同时，IBC电池背面PN结的质量也是IBC电池技术的关键。目前管式硼扩散形成P区时，需要高温，并且方阻的均匀性相对较差，不利于电流的有效收集。传统的技术路线是液态硼扩散和光刻技术，但需要高温工艺，且均匀性较差；另外，使用离子注入技术可获得均匀性好、结深精确可控的P区和N区，具有很好的发展前景，但成本较高，尚未产业化。
现在比较常用管式高温硼扩散、磷扩散的方式实现IBC电池背面P区、N区的制备，在此过程中需要使用多次掩膜、光刻技术，工序相对复杂，方阻均匀性比较差，PN结质量一般；另外也有企业采用离子注入技术，通过掩膜进行选择性离子注入，分别实现图形化的磷掺杂及硼掺杂，但是目前离子注入硼技术难度较大，量产稳定性较差，并且离子注入设备昂贵，硼掺杂所需的气体B2H6具有毒性，IBC电池的成本偏高。
发明内容
本发明所要解决的技术问题是：如何在电池背面制备出质量较好、成叉指状间隔排列的p区和n区。
为了解决上述技术问题，本发明提供了一种IBC电池叉指状PN结的电池结构，其特征在于，依次包括：氮化硅减反射膜层、二氧化硅薄膜层一、N型单晶硅片衬底、叉指状P区和N区层、二氧化硅薄膜层二、三氧化二铝薄膜层；各P区、N区分别插有一根金属电极，金属电极从三氧化二铝薄膜层表面露出。
本发明还提供了上述IBC电池叉指状PN结的电池结构的制备方法，其特征在于，包括以下步骤：
步骤1)：将单晶硅片清洗制绒，去除硅片表面的杂质的同时，完成金字塔绒面的制备，制得N型单晶硅片衬底；
步骤2)：在N型单晶硅片衬底的背面采用丝网印刷的方式先局域印刷一层纳米硼浆，然后采用皮秒激光掺杂的方式将硼源进行掺杂，形成P区；将未印刷硼浆的区域，进行图形化硬掩膜，通过离子注入的方式，进行图形化磷掺杂，形成多个N区，多个N区将P区分为多个，即得叉指状P区和N区层；
步骤3)：在N型单晶硅片衬底的正反两面分别采用氧化的方式，分别生长一层二氧化硅薄膜，即二氧化硅薄膜层一和二氧化硅薄膜层二；
步骤4)：在N型单晶硅片衬底正面的二氧化硅薄膜层一上采用PECVD的方法沉积一层本征非晶硅层；然后采用PECVD的方法再沉积一层氮化硅减反射薄膜，即氮化硅减反射膜层；
步骤5)：在N型单晶硅片衬底背面的二氧化硅薄膜层二上通过ALD的沉积方式，沉积一层三氧化二铝薄膜，即三氧化二铝薄膜层；
步骤6)：采用激光开孔的方法在背面叉指状P区和N区层的P区、N区分别开孔，将铝浆印刷在背面，烧结后与硅片形成欧姆接触，构成金属电极。
本发明采用丝网印刷叠加激光掺杂的方式可以在硼掺杂环节解决高温硼源扩散不均匀的问题，同时其成本相对离子注入成本较低，可以一定程度的降低IBC电池的制造成本，通过激光可以实现精细掺杂，方阻均匀性良好。
实现IBC电池背面P区的掺杂，避免了高温扩散不均匀，多次掩膜技术及光刻技术的反复使用多硅片造成的损伤问题，同时也解决了离子注入硼掺杂技术中，硼掺杂难度大，均匀性较差的技术瓶颈，印刷浆料安全也避免了离子注入技术中采用的B2H6毒性气体。
本发明减少了高温扩散以及多步骤掩膜及光刻的步骤，同时减少了一步掩膜和硼注入的步骤，极大地减少了制造工序，降低了IBC电池的制造成本，并且可以实现IBC电池背面高质量PN的制备，实现IBC电池内部电流的极大输出，降本的同时，有效的改善电池光电转换效率。对IBC电池技术的市场化有极大促进作用。
附图说明
图1为本发明提供的IBC电池叉指状PN结的电池结构的示意图。
具体实施方式
为使本发明更明显易懂，兹以优选实施例，并配合附图作详细说明如下。
实施例
如图1所示，为本发明提供的一种IBC电池叉指状PN结的电池结构，其依次包括：氮化硅减反射膜层1、二氧化硅薄膜层一2、N型单晶硅片衬底3、叉指状P区和N区层4、二氧化硅薄膜层二5、三氧化二铝薄膜层6；各P区、N区分别插有一根金属电极7，金属电极7从三氧化二铝薄膜层6表面露出。
上述IBC电池叉指状PN结的电池结构的制备方法为：
步骤1：将单晶硅片清洗制绒，去除硅片表面的杂质的同时，完成金字塔绒面的制备，制得N型单晶硅片衬底3；
步骤2：在N型单晶硅片衬底3的背面采用丝网印刷的方式先局域印刷一层纳米硼浆，然后采用皮秒激光掺杂的方式将硼源进行掺杂，形成P区；将未印刷硼浆的区域，进行图形化硬掩膜，通过离子注入的方式，进行图形化磷掺杂，形成多个N区，多个N区将P区分为多个，即得叉指状P区和N区层4；
步骤3：在N型单晶硅片衬底3的正反两面分别采用氧化的方式，分别生长一层二氧化硅薄膜，即二氧化硅薄膜层一2和二氧化硅薄膜层二5；
步骤4：在N型单晶硅片衬底3正面的二氧化硅薄膜层一2上采用PECVD的方法沉积一层本征非晶硅层；然后采用PECVD的方法再沉积一层氮化硅减反射薄膜，即氮化硅减反射膜层1；
步骤5：在N型单晶硅片衬底3背面的二氧化硅薄膜层二5上通过ALD的沉积方式，沉积一层三氧化二铝薄膜，即三氧化二铝薄膜层6；
步骤6：采用激光开孔的方法在背面叉指状P区和N区层4的P区、N区分别开孔，将铝浆印刷在背面，烧结后与硅片形成欧姆接触，构成金属电极7。

Claims (2)

1.一种IBC电池叉指状PN结的电池结构，其特征在于，依次包括：氮化硅减反射膜层(1)、二氧化硅薄膜层一(2)、N型单晶硅片衬底(3)、叉指状P区和N区层(4)、二氧化硅薄膜层二(5)、三氧化二铝薄膜层(6)；各P区、N区分别插有一根金属电极(7)，金属电极(7)从三氧化二铝薄膜层(6)表面露出。
2.一种权利要求1所述的IBC电池叉指状PN结的电池结构的制备方法，其特征在于，包括以下步骤：
步骤1)：将单晶硅片清洗制绒，去除硅片表面的杂质的同时，完成金字塔绒面的制备，制得N型单晶硅片衬底(3)；
步骤2)：在N型单晶硅片衬底(3)的背面采用丝网印刷的方式先局域印刷一层纳米硼浆，然后采用皮秒激光掺杂的方式将硼源进行掺杂，形成P区；将未印刷硼浆的区域，进行图形化硬掩膜，通过离子注入的方式，进行图形化磷掺杂，形成多个N区，多个N区将P区分为多个，即得叉指状P区和N区层(4)；
步骤3)：在N型单晶硅片衬底(3)的正反两面分别采用氧化的方式，分别生长一层二氧化硅薄膜，即二氧化硅薄膜层一(2)和二氧化硅薄膜层二(5)；
步骤4)：在N型单晶硅片衬底(3)正面的二氧化硅薄膜层一(2)上采用PECVD的方法沉积一层本征非晶硅层；然后采用PECVD的方法再沉积一层氮化硅减反射薄膜，即氮化硅减反射膜层(1)；
步骤5)：在N型单晶硅片衬底(3)背面的二氧化硅薄膜层二(5)上通过ALD的沉积方式，沉积一层三氧化二铝薄膜，即三氧化二铝薄膜层(6)；
步骤6)：采用激光开孔的方法在背面叉指状P区和N区层(4)的P区、N区分别开孔，将铝浆印刷在背面，烧结后与硅片形成欧姆接触，构成金属电极(7)。
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