CN112133784A - 一种基于光刻掩膜法制备n型fsf结构的ibc太阳能电池的方法 - Google Patents
一种基于光刻掩膜法制备n型fsf结构的ibc太阳能电池的方法 Download PDFInfo
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Abstract
本专利提供了一种基于光刻掩膜法制备N型FSF结构的IBC太阳能电池的方法,硅片依次经过去损伤层步骤、制作选择性发射极步骤、制绒步骤、制作表面场步骤、镀减反射膜步骤、丝网印刷步骤和烧结步骤;在制作交叉型的P+发射极及N+背场过程中采用光刻掩膜技术避免在开窗区附近的硅片引入晶格损伤,从而降低载流子复合速率。同时,电池前表面的FSF结构与N型硅衬底形成高低结,促使少子空穴向电池背面运输,其中P+发射极以上区域的空穴直接被收集,N+背场以上的空穴平行运动至P+发射极被收集。
Description
技术领域
本发明涉及一种背接触(IBC)太阳能电池的制备方法,特别是基于光刻掩膜法制备N型FSF结构的IBC太阳能电池的方法。
背景技术
从整个能源系统经济性及环保性角度考虑,推广太阳能电池的应用是新能源发展的趋势。在5.31新政后,因常规P型电池的低效性而被市场逐渐淘汰,因此,生产高效太阳能电池成为光伏行业发展的首要任务。目前,高效太阳能电池种类繁多,但IBC电池以正面无栅线遮挡所带来短路电流的优势远超于P-PERC/N-PERT电池。例如在相同反射率及绒面形貌的前提下,相比N-PERT、P-PERC电池,N型IBC电池的短路电流较大;同时,因为无需考虑正面栅线接触问题(欧姆接触),所以存在提高表面方阻的空间,以此通过减少表面载流子复合达到提高开路电压的目的;最后,由于金属栅线均在背面,则栅线宽度不受遮光性能的影响,可通过增加金属栅线数量降低串联电阻,从而进一步增大短路电流。IBC电池以其优异的性能深受光伏研究者的追随,但目前在完成P+发射极和N+背场区隔离过程中应用较多的是激光烧蚀法,但在此过程中会在开窗区附近的硅片引入晶格缺陷导致复合加大,从而降低开路电压。为了解决以上不足,本发明提出一种基于光刻掩膜法制备N型FSF结构的IBC太阳能电池的方法,大大降低了因激光烧蚀对周边硅片晶格损伤所引起的载流子复合增大的问题。
发明内容
为了解决激光烧蚀法对硅片晶格损伤所引起复合增大的不足,本发明涉及一种基于光刻掩膜法制备N型FSF结构的IBC太阳能电池的方法,其特征在于硅片依次经过去损伤层步骤、制作选择性发射极步骤、制绒步骤、制作表面场步骤、镀减反射膜步骤、丝网印刷步骤和烧结步骤;
所述去损伤层步骤:将所述硅片依次经过KOH和H2O2混合液、KOH水溶液、HCl和HF混合液,以去除硅片表面线切割所带来的损伤层来降低载流子表面复合;
所述制作选择性发射极步骤:按照电池背面设计结构在所述硅片N+背场上沉积光刻胶掩膜层,以保证不被硼原子掺杂;将电池片正对正接触放置在石英舟中,在三溴化硼、氧气气氛中对电池背面进行扩散,形成P+发射极区;
所述制绒过程步骤:将所述完成P+发射极制作的硅片依次经过HF水溶液、NaOH和制绒添加剂混合液,经过HF槽的目的是完成硅片N+背场上光刻胶层的去除和P+发射极区上硼硅玻璃(BSG)的减薄,以此降低P+发射极区表面的多孔缺陷;经过NaOH和制绒添加剂混合液的目的是对所述硅片N+背场及前表面进行织构化处理;所述制作表面场步骤:
在所述P+发射极区上沉积光刻胶掩膜层,以保护P+发射极区不被磷原子掺杂;
在三氯氧磷氛围下对电池进行双面扩散,以形成前表面场及N+背场;
在HF水溶液下去除发射极区的光刻胶层并减薄磷硅玻璃(PSG),达到减少表面多孔缺陷来降低载流子表面复合的目的;
所述镀减反射膜步骤:依次在电池正面和背面沉积减反射薄膜。
优选的,所述丝网印刷分为五步印刷,依次包括第一步印刷:点印式烧穿型副栅线银、铝、铜、镀银铜、镀镍铜、镀锡铜或合金浆料并烘干,第二步印刷线型副栅线银、铝、铜、镀银铜、镀镍铜、镀锡铜或合金浆料并烘干烧结,第三四步印刷:分步印刷绝缘浆料两次,每完成一次绝缘浆料印刷均需烘干,第五步主栅线印刷一次。本发明与现有技术相比存在以下优点和积极效果:
本发明涉及基于光刻掩膜法制备N型FSF结构的IBC太阳能电池的方法,在制作交叉型的P+发射极及N+背场过程中采用光刻掩膜技术避免在开窗区附近的硅片引入晶格损伤,从而降低载流子复合速率。
电池前表面的FSF结构与N型硅衬底形成高低结,促使少子空穴向电池背面运输,其中P+发射极以上区域的空穴直接被收集,N+背场以上的空穴平行运动至P+发射极区被收集。
附图说明
图1是N型FSF结构的IBC太阳能电池结构剖面图;
图2是制备N型FSF结构的IBC太阳能电池方法的工艺流程图。
具体实施方式
实施例
为了使本发明的上述目的、特征和优点能够更为明显易懂,下面结合附图对本发明的具体实施方式做详细的说明。
根据图1和图2所示,为了解决激光烧蚀法对硅片晶格损伤所引起载流子复合速率增大的不足,本发明提供了一种基于光刻掩膜法制备N型FSF结构IBC太阳能电池的方法,其工艺步骤为:
将硅片经过去损伤层、制作选择性发射极、制绒、制作表面场、镀减反射膜和丝网印刷、烧结,得到高效太阳能电池;
1)所述的去损伤层包括:
(1)将所述硅片依次经过KOH和H2O2混合液、KOH水溶液、HCl和HF混合液,以去除硅片表面线切割所带来的损伤层来降低载流子表面复合;
2)所述的制作选择性发射极包括:
(1)按照电池背面结构设计图案,在所述硅片N+背场上沉积光刻胶掩膜层,以保证不被硼原子掺杂;
(2)将电池片正对正接触放置在石英舟中,在三溴化硼、氧气气氛中对电池背面进行扩散,形成P+发射极;
3)所述的制绒过程包括:
(1)将所述完成P+发射极制作的硅片依次经过HF水溶液、NaOH和制绒添加剂混合液,在HF液的目的是完成硅片N+背场上光刻胶层的去除和P+发射极区上硼硅玻璃(BSG)的减薄,以此降低P+发射极区表面的多孔缺陷;;
(2)在NaOH和制绒添加剂混合液中对N+背场及前表面进行织构化处理;4)所述的制作表面场包括:
(1)在所述P+发射极区上沉积光刻胶掩膜层,以保护P+发射极区不被磷原子掺杂;
(2)在三氯氧磷氛围下对电池进行双面扩散,以形成前表面场及N+背场;
(3)在HF水溶液下去除发射极区的光刻胶层并减薄PSG,达到减少表面多孔缺陷来降低载流子表面复合的目的;5)所述的镀减反射膜包括:首先在电池正面镀减反射膜,其次在背面镀减反射膜;
6)所述丝网印刷分为五步印刷,具体如下:
印刷一层点印式烧穿型副栅线银、铝、铜、镀银铜、镀镍铜、镀锡铜或合金浆料—烘干—印刷一层线型副栅线银、铝、铜、镀银铜、镀镍铜、镀锡铜或合金浆料—烘干—烧结—印刷一层绝缘浆料—烘干—印刷一层绝缘浆料—烘干—主栅线印刷一次。
以上所述,仅为本发明的较佳实施例,并非对本发明任何形式上和实质上的限制,应当指出,对于本技术领域的普通技术人员,在不脱离本发明方法的前提下,还将可以做出若干改进和补充,这些改进和补充也应视为本发明的保护范围。凡熟悉本专业的技术人员,在不脱离本发明的精神和范围的情况下,当可利用以上所揭示的技术内容而做出的些许更动、修饰与演变的等同变化,均为本发明的等效实施例;同时,凡依据本发明的实质技术对上述实施例所作的任何等同变化的更动、修饰与演变,均仍属于本发明的技术方案的范围内。
Claims (2)
1.一种基于光刻掩膜法制备N型FSF结构的IBC太阳能电池的方法,其特征在于硅片依次经过去损伤层步骤、制作选择性发射极步骤、制绒步骤、制作表面场步骤、镀减反射膜步骤、丝网印刷步骤和烧结步骤;
所述的去损伤层步骤:
(1)将所述硅片依次经过KOH和H2O2混合液、KOH水溶液、HCl和HF混合液,以去除硅片表面线切割所带来的损伤层来降低载流子表面复合;
所述制作选择性发射极步骤:
(1)按照电池背面结构设计图案,在所述硅片N+背场上沉积光刻胶掩膜层,以保证不被硼原子掺杂;
(2)将电池片正对正接触放置在石英舟中,在三溴化硼、氧气气氛中对电池背面进行扩散,形成P+发射极;所述制绒过程步骤:
(1)将所述完成P+发射极制作的硅片依次经过HF水溶液、NaOH和制绒添加剂混合液,在HF液的目的是完成硅片N+背场上光刻胶层的去除和P+发射极区上硼硅玻璃(BSG)的减薄,以此降低P+发射极区表面的多孔缺陷;
(2)在NaOH及制绒添加剂溶液下对所述硅片N+背场及前表面进行织构化处理;所述制作表面场步骤:
(1)在所述P+发射极区上沉积光刻胶掩膜层,以保护P+发射极区不被磷原子掺杂;
(2)在三氯氧磷氛围下对电池进行双面扩散,以形成前表面场及N+背场;
(3)在HF水溶液下去除发射极区的光刻胶层并减薄PSG,达到减少表面多孔缺陷来降低载流子表面复合的目的;
所述的镀减反射膜包括:
(1)首先在电池正面镀减反射膜。
2.其次在背面镀减反射膜;根据权利要求1所述的一种基于光刻掩膜法制备N型FSF结构的IBC太阳能电池的方法,其特征在于所述丝网印刷分为五步印刷,依次包括第一步印刷:点印式烧穿型副栅线银、铝、铜、镀银铜、镀镍铜、镀锡铜或合金浆料并烘干,第二步印刷层线型副栅线银、铝、铜、镀银铜、镀镍铜、镀锡铜或合金浆料并烘干烧结,第三四步印刷:分步印刷绝缘浆料两次且每印刷完一次经过烘干,和第五步主栅线印刷一次。
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113561635A (zh) * | 2021-07-23 | 2021-10-29 | 陕西众森电能科技有限公司 | 一种高精度图案转印浆料载板结构 |
CN115132876A (zh) * | 2021-03-22 | 2022-09-30 | 黄河水电西宁太阳能电力有限公司 | 一种基于se背面碱抛光的高效perc电池制备工艺 |
CN115172478A (zh) * | 2022-07-28 | 2022-10-11 | 浙江晶科能源有限公司 | 太阳能电池及光伏组件 |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130213469A1 (en) * | 2011-08-05 | 2013-08-22 | Solexel, Inc. | High efficiency solar cell structures and manufacturing methods |
WO2014092649A1 (en) * | 2012-12-10 | 2014-06-19 | National University Of Singapore | A method of manufacturing a photovoltaic cell |
CN105304733A (zh) * | 2015-03-13 | 2016-02-03 | 常州天合光能有限公司 | 太阳能电池微纳尺寸陷光结构、太阳能电池及其制备方法 |
CN106340568A (zh) * | 2016-09-14 | 2017-01-18 | 英利能源(中国)有限公司 | Ibc电池制备方法 |
CN107331714A (zh) * | 2017-06-01 | 2017-11-07 | 晋能清洁能源科技有限公司 | 一种ibc电池工艺制备方法 |
CN107611197A (zh) * | 2017-09-05 | 2018-01-19 | 北京普扬科技有限公司 | 一种ibc电池及其制备方法 |
CN107863419A (zh) * | 2017-11-02 | 2018-03-30 | 国家电投集团西安太阳能电力有限公司 | 一种双面perc晶体硅太阳能电池的制备方法 |
CN107946410A (zh) * | 2017-12-18 | 2018-04-20 | 阳光中科(福建)能源股份有限公司 | 一种n型ibc太阳电池的制作方法 |
CN108075017A (zh) * | 2016-11-10 | 2018-05-25 | 上海凯世通半导体股份有限公司 | Ibc电池的制作方法 |
CN109166794A (zh) * | 2018-07-18 | 2019-01-08 | 常州大学 | 一种高效低成本晶硅电池的分步式磷掺杂方法 |
-
2019
- 2019-06-06 CN CN201910490821.0A patent/CN112133784A/zh active Pending
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130213469A1 (en) * | 2011-08-05 | 2013-08-22 | Solexel, Inc. | High efficiency solar cell structures and manufacturing methods |
WO2014092649A1 (en) * | 2012-12-10 | 2014-06-19 | National University Of Singapore | A method of manufacturing a photovoltaic cell |
CN105304733A (zh) * | 2015-03-13 | 2016-02-03 | 常州天合光能有限公司 | 太阳能电池微纳尺寸陷光结构、太阳能电池及其制备方法 |
CN106340568A (zh) * | 2016-09-14 | 2017-01-18 | 英利能源(中国)有限公司 | Ibc电池制备方法 |
CN108075017A (zh) * | 2016-11-10 | 2018-05-25 | 上海凯世通半导体股份有限公司 | Ibc电池的制作方法 |
CN107331714A (zh) * | 2017-06-01 | 2017-11-07 | 晋能清洁能源科技有限公司 | 一种ibc电池工艺制备方法 |
CN107611197A (zh) * | 2017-09-05 | 2018-01-19 | 北京普扬科技有限公司 | 一种ibc电池及其制备方法 |
CN107863419A (zh) * | 2017-11-02 | 2018-03-30 | 国家电投集团西安太阳能电力有限公司 | 一种双面perc晶体硅太阳能电池的制备方法 |
CN107946410A (zh) * | 2017-12-18 | 2018-04-20 | 阳光中科(福建)能源股份有限公司 | 一种n型ibc太阳电池的制作方法 |
CN109166794A (zh) * | 2018-07-18 | 2019-01-08 | 常州大学 | 一种高效低成本晶硅电池的分步式磷掺杂方法 |
Non-Patent Citations (1)
Title |
---|
张竹青等: "选择性区域掺杂太阳能电池的研究与发展", 《现代电子技术》, vol. 38, no. 20, pages 129 - 131 * |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115132876A (zh) * | 2021-03-22 | 2022-09-30 | 黄河水电西宁太阳能电力有限公司 | 一种基于se背面碱抛光的高效perc电池制备工艺 |
CN113561635A (zh) * | 2021-07-23 | 2021-10-29 | 陕西众森电能科技有限公司 | 一种高精度图案转印浆料载板结构 |
CN113561635B (zh) * | 2021-07-23 | 2022-06-21 | 陕西众森电能科技有限公司 | 一种高精度图案转印浆料载板结构 |
CN115172478A (zh) * | 2022-07-28 | 2022-10-11 | 浙江晶科能源有限公司 | 太阳能电池及光伏组件 |
CN115172478B (zh) * | 2022-07-28 | 2024-01-23 | 浙江晶科能源有限公司 | 太阳能电池及光伏组件 |
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