CN114420790A - 一种基于ald工艺制备叠层氧化铝膜层的方法 - Google Patents

一种基于ald工艺制备叠层氧化铝膜层的方法 Download PDF

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CN114420790A
CN114420790A CN202210059063.9A CN202210059063A CN114420790A CN 114420790 A CN114420790 A CN 114420790A CN 202210059063 A CN202210059063 A CN 202210059063A CN 114420790 A CN114420790 A CN 114420790A
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董思敏
欧文凯
向亮睿
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Abstract

本发明提供了一种基于ALD工艺制备叠层氧化铝膜层的方法，利用原子层沉积技术(即ALD工艺)，采用O3或H20分别作为前驱体源，且优先使用O3为前驱源制得了性能优异的叠层氧化铝膜层，与现有技术中的单层氧化铝膜层相比，更大化的降低氧化铝的界面态密度，提升了退火后氧化铝的固定负电荷密度，进而提高了其化学钝化及场钝化的作用，使其能够满足一些高效硅材料太阳能电池的钝化要求，将其应用于太阳能电池结构中后，可以有效的提升电池转换效率。

Description

一种基于ALD工艺制备叠层氧化铝膜层的方法
技术领域
本发明涉及本发明属于太阳能电池技术领域，尤其是涉及一种基于ALD工艺制备叠层氧化铝膜层的方法。
背景技术
提高硅基太阳能电池的效率是人们目前面临的主要问题；表面钝化则是提高硅基太阳能电池效率的一种方法，它对于电池效率的提高一直是该领域的研究热点。在众多的钝化膜材料中，氧化铝由于其界面处存在的大量固定负电荷和低的界面态密度，退火后其优异场效应钝化及化学钝化作用认为是太阳能电池天然的表面钝化材料。
现有技术中，通常采用原子层沉积技术(即ALD工艺)，以O3或H20作为前驱体源在硅片表面制备氧化铝薄膜，通过退火后都能使界面处的缺陷态密度降低、固定负电荷密度提升从而达到化学钝化及场钝化的作用。但是现有技术中所制备的氧化铝薄膜均为单层膜，其钝化作用效果有限，无法满足一些高效硅材料太阳能电池的钝化要求。
因此，有必要提供一种新的技术方案以克服上述缺陷。
发明内容
本发明的目的在于提供一种可有效解决上述技术问题的基于ALD工艺制备叠层氧化铝膜层的方法。
为达到本发明之目的，采用如下技术方案：
一种基于ALD工艺制备叠层氧化铝膜层的方法，包括如下步骤：将生长基片送入腔体，然后以Al(CH3)3)与O3、Al(CH3)3)与H2O为生长源，采用交替脉冲的方式在生长基片的表面生长叠层氧化铝膜层。
优选的，第一层氧化铝膜层以Al(CH3)3)与O3为生长源，第二层氧化铝膜层以Al(CH3)3)与H2O为生长源。
优选的，以Al(CH3)3)与O3为生长源生长氧化铝膜层过程中，单次Al(CH3)3)的流量为10-30sccm，脉冲时长为1-5s，吹扫时长为4-9s。
优选的，以Al(CH3)3)与O3为生长源生长氧化铝膜层过程中，单次O3流量为10-30sccm，脉冲时长为3-10s，吹扫时长为5-10s。
优选的，以Al(CH3)3)与H2O为生长源生长氧化铝膜层过程中，单次Al(CH3)3)的流量为10-30sccm，脉冲时长为1-5s，吹扫时长为4-9s。单次H2O流量为10-30sccm，脉冲时长为3-10s，吹扫时长为6-12s。
优选的，以Al(CH3)3)与H2O为生长源生长氧化铝膜层过程中，单次H2O流量为10-30sccm，脉冲时长为3-10s，吹扫时长为6-12s。
优选的，生长氧化铝膜层前所述腔体的温度控制在170-250℃。
本发明HIA提供了一种采用如上述所述的方法制备的叠层铝膜层,该叠层铝膜层可以应用在高效电池结构中。
与现有技术相比，本发明具有如下有益效果：
本发明利用原子层沉积技术(即ALD工艺)，采用O3或H20分别作为前驱体源，且优先使用O3为前驱源制得了性能优异的叠层氧化铝膜层，与现有技术中的单层氧化铝膜层相比，更大化的降低氧化铝的界面态密度，提升了退火后氧化铝的固定负电荷密度，进而提高了其化学钝化及场钝化的作用，使其能够满足一些高效硅材料太阳能电池的钝化要求，将其应用于太阳能电池结构中后，可以有效的提升电池转换效率。
具体实施方式
为了使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例中的技术方案进行清楚、完整的描述，显然，所描述的实施例是本发明的部分实施例，而不是全部实施例。
实施例
本发明提供的一种基于ALD工艺制备叠层氧化铝膜层的方法，包括以下步骤：
(1)将生长基片送入腔体，并在生长氧化铝工艺前，保证升温达到设定温度的要求，优选的温度在210℃，并恒压恒温保持一定时间，保证待生长基体及整个工艺腔体稳定在此温度，恒温状态下有利于保证后续氧化铝膜层生长的均匀性。
(2)优先以Al(CH3)3)+O3为生长源生长氧化铝膜层，采用交替脉冲的方式将Al(CH3)3)与O3交替通入腔体内进行沉积，工艺气体交替通入最小循环为Al(CH3)3)气体、吹扫气体、O3气体、吹扫气体；其中单次Al(CH3)3)流量为18sccm，脉冲时长为2.5s，N2吹扫时长为7s，单次O3流量为18sccm，脉冲时长为8s，N2吹扫时长为7s；氧化铝生长的厚度在约2nm，交替脉冲次数为12次；每次脉冲结束使用N2等惰性气体进行吹扫；通过调整交替脉冲次数以控制膜层厚度。
(3)再生长以Al(CH3)3)+H2O为生长源生长氧化铝膜层，采用交替脉冲的方式Al(CH3)3)与H2O交替通入工艺腔进行沉积，工艺气体交替通入最小循环为Al(CH3)3)气体、吹扫气体、O3气体、吹扫气体；其中单次Al(CH3)3)流量为18sccm，脉冲时长为2.5s，N2吹扫时长为7s，单次H2O流量为18sccm，脉冲时长为6s，N2吹扫时长为9s；氧化铝生长的厚度在约3nm，交替脉冲次数为18次；每次脉冲结束使用N2等惰性气体进行吹扫；通过调整交替脉冲次数以控制膜层厚度。
(4)进行N2吹扫、破真空并出腔，即得到叠层氧化铝膜层。
对比例1
上述实施例的基础上，采用ALD工艺，以Al(CH3)3)+O3为生长源在生长基片生长单层氧化铝膜层。
对比例2
上述实施例的基础上，采用ALD工艺，以Al(CH3)3)+H2O为生长源在生长基片生长单层氧化铝膜层。
对比例3
上述实施例的基础上，采用ALD工艺，优选以Al(CH3)3)+H2O为生长源，而后以Al(CH3)3)+O3为生长源在生长基片生长双层氧化铝膜层。
将上述实施例以及对比例1-3的氧化铝膜层分别应用在同型号的太阳能电池上，而后对太阳能电池的各项性能进行测试，具体测试数据如表1所示：
Figure BDA0003477458320000041
表1
从表1的对比结果来看，采用实施例的方法制备的叠加氧化铝膜层有更优的电性表现。
所述对这些实施例的多种修改对本领域的专业技术人员来说将是显而易见的，本文中所定义的一般原理可以在不脱离本发明的精神或范围的情况下，在其它实施例中实现。

Claims (9)

1.一种基于ALD工艺制备叠层氧化铝膜层的方法，其特征在于：包括如下步骤：将生长基片送入腔体，然后以Al(CH3)3)与O3、Al(CH3)3)与H2O为生长源，采用交替脉冲的方式在生长基片的表面生长叠层氧化铝膜层。
2.根据权利要求1所述的一种基于ALD工艺制备叠层氧化铝膜层的方法，其特征在于：第一层氧化铝膜层以Al(CH3)3)与O3为生长源，第二层氧化铝膜层以Al(CH3)3)与H2O为生长源。
3.根据权利要求2所述的一种基于ALD工艺制备叠层氧化铝膜层的方法，其特征在于：以Al(CH3)3)与O3为生长源生长氧化铝膜层过程中，单次Al(CH3)3)的流量为10-30sccm，脉冲时长为1-5s，吹扫时长为4-9s。
4.根据权利要求3所述的一种基于ALD工艺制备叠层氧化铝膜层的方法，其特征在于：以Al(CH3)3)与O3为生长源生长氧化铝膜层过程中，单次O3流量为10-30sccm，脉冲时长为3-10s，吹扫时长为5-10s。
5.根据权利要求2所述的一种基于ALD工艺制备叠层氧化铝膜层的方法，其特征在于：以Al(CH3)3)与H2O为生长源生长氧化铝膜层过程中，单次Al(CH3)3)的流量为10-30sccm，脉冲时长为1-5s，吹扫时长为4-9s。单次H2O流量为10-30sccm，脉冲时长为3-10s，吹扫时长为6-12s。
6.根据权利要求5所述的一种基于ALD工艺制备叠层氧化铝膜层的方法，其特征在于：以Al(CH3)3)与H2O为生长源生长氧化铝膜层过程中，单次H2O流量为10-30sccm，脉冲时长为3-10s，吹扫时长为6-12s。
7.根据权利要求1所述的一种基于ALD工艺制备叠层氧化铝膜层的方法，其特征在于：生长氧化铝膜层前所述腔体的温度控制在170-250℃。
8.一种采用如权利要求1-7任意一项所述的方法制备的叠层氧化铝膜层。
9.如权利要求8所述的叠层氧化铝膜层在电池结构中的应用。
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