WO2019148535A1 - 一种具有抗pid性能的perc电池结构及其制备方法 - Google Patents
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Abstract
本发明公开了一种具有抗PID性能的PERC电池结构，包括硅衬底，所述硅衬底的正面依次设置有二氧化硅层和正面氮化硅层，所述硅衬底的反面依次设置有背面氧化铝层和背面氮化硅层；所述二氧化硅层和正面氮化硅层之间设置有正面氧化铝层，所述正面氧化铝层厚度为4±0.5nm；所述二氧化硅层厚度为2±0.5nm，所述正面氮化硅层厚度为80±9nm，所述背面氧化铝层厚度为4±0.5nm，所述背面氮化硅层厚度为130±10nm。本发明还公开了一种制备具有抗PID性能的PERC电池结构的方法。本发明的电池结构具有正面氧化铝膜层，而且通过合理设计的正面氧化铝膜层的厚度以及其他膜层的厚度，使得该电池结构具有更强的抗PID性能，非常有效，十分值得推广。
Description
本发明涉及光伏组件技术领域，具体为一种具有抗PID性能的PERC电池结构及其制备方法。
现有行业内PERC电池多数背钝化方式都是采用等离子增强化学气相沉积(PECVD)方式，该结构电池只有背面生长氧化铝薄层且薄层致密性较差厚度较厚，正面没有氧化铝薄层，如申请号为“201310612665.3”的一种证明热氧化、选择性发射结与背钝化结合的晶硅太阳能电池及其制造方法、申请号为“201710104735.2”的一种高转化效率抗PID的N型晶体硅双面电池及其制备方法、以及申请号为“201710291291.8”的一种PERC电池背面钝化膜层以及基于ALD工艺的PERC电池制备方法，上述几种现有技术的电池结构虽然可以实现提高效率的目的，但是面对日益严格的抗PID测试存在很大风险，同时在生产成本方面比ALD镀膜方式有所增加。
发明内容
本发明的目的在于提供一种具有抗PID性能的PERC电池结构及其制备方法，以解决上述背景技术中提出的问题。
为实现上述目的，本发明提供如下技术方案：
一种具有抗PID性能的PERC电池结构，包括硅衬底，所述硅衬底的正面依次设置有二氧化硅层和正面氮化硅层，所述硅衬底的反面依次设置有背面氧化铝层和背面氮化硅层；
所述二氧化硅层和正面氮化硅层之间设置有正面氧化铝层，所述正面氧化铝层厚度为4±0.5nm；
所述二氧化硅层厚度为2±0.5nm，所述正面氮化硅层厚度为80±9nm， 所述背面氧化铝层厚度为4±0.5nm，所述背面氮化硅层厚度为130±10nm。
一种制备具有抗PID性能的PERC电池结构的方法，包括以下步骤：
S1、生长二氧化硅薄层：在硅衬底的正面沉积二氧化硅层；
S2、生长氧化铝薄层：在二氧化硅层上采用ALD镀膜方式镀上正面氧化铝层；
在硅衬底的反面采用ALD镀膜方式镀上背面氧化铝层；
S3、生长钝化膜薄层：在正面氧化铝层上镀上正面氮化硅层；
在背面氧化铝层上镀上背面氮化硅层。
与现有技术相比，本发明的有益效果是：
本发明的新型PERC电池结构具有更佳的抗PID效果，可以满足日益严格的抗PID可靠性测试要求，获得高可靠性、高质量的光伏组件。
本发明的新型PERC电池结构采用原子层沉积(ALD)方式，实现双面生长氧化铝薄膜，在硅片正面和背面同时获得致密性高、厚度较薄的氧化铝薄膜，氧化铝薄膜不但具有良好的背钝化效果，同时也具有更好的抗PID性能。
本发明的新型PERC电池结构的钝化膜采用全自动化设备进行生长，所得薄膜均匀性、致密性优良，适合生产企业量产。
本发明的电池结构具有正面氧化铝膜层，而且通过合理设计的正面氧化铝膜层的厚度以及其他膜层的厚度，使得该电池结构具有更强的抗PID性能，非常有效，十分值得推广。
图1为本发明的电池结构示意图；
图2为本发明的制备方法系统流程图。
图中：1硅衬底、2二氧化硅层、3正面氮化硅层、4背面氧化铝层、5背面氮化硅层、6正面氧化铝层。
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
请参阅图1-2，本发明提供一种技术方案：
一种具有抗PID性能的PERC电池结构，包括硅衬底1，硅衬底1的正面依次设置有二氧化硅层2和正面氮化硅层3，硅衬底1的反面依次设置有背面氧化铝层4和背面氮化硅层5；
二氧化硅层2和正面氮化硅层3之间设置有正面氧化铝层6，正面氧化铝层6厚度为4±0.5nm；
二氧化硅层2厚度为2±0.5nm，正面氮化硅层3厚度为80±9nm，背面氧化铝层4厚度为4±0.5nm，背面氮化硅层5厚度为130±10nm。
一种制备具有抗PID性能的PERC电池结构的方法，包括以下步骤：
S1、生长二氧化硅薄层：在硅衬底1的正面沉积二氧化硅层2；
S2、生长氧化铝薄层：在二氧化硅层2上采用ALD镀膜方式镀上正面氧化铝层6；
在硅衬底1的反面采用ALD镀膜方式镀上背面氧化铝层4；
S3、生长钝化膜薄层：在正面氧化铝层6上镀上正面氮化硅层3；
在背面氧化铝层4上镀上背面氮化硅层5。
抗PID测试对比实验：抗PID测试常规采用在电池上加正向偏压并保持一段时间，最终测试加偏压前后的功率衰减值，测试结果如下表1所示，表1为加正向电压1000V，持续168min的测试结果：
表1
由表1可知双面氧化铝薄膜结构抗PID性能明显高于背面氧化铝薄膜。
尽管已经示出和描述了本发明的实施例，对于本领域的普通技术人员而言，可以理解在不脱离本发明的原理和精神的情况下可以对这些实施例进行多种变化、修改、替换和变型，本发明的范围由所附权利要求及其等同物限定。
Claims (2)
- 一种具有抗PID性能的PERC电池结构，包括硅衬底(1)，所述硅衬底(1)的正面依次设置有二氧化硅层(2)和正面氮化硅层(3)，所述硅衬底(1)的反面依次设置有背面氧化铝层(4)和背面氮化硅层(5)，其特征在于：所述二氧化硅层(2)和正面氮化硅层(3)之间设置有正面氧化铝层(6)，所述正面氧化铝层(6)厚度为4±0.5nm；所述二氧化硅层(2)厚度为2±0.5nm，所述正面氮化硅层(3)厚度为80±9nm，所述背面氧化铝层(4)厚度为4±0.5nm，所述背面氮化硅层(5)厚度为130±10nm。
- 一种制备权利要求1所述的具有抗PID性能的PERC电池结构的方法，其特征在于，包括以下步骤：S1、生长二氧化硅薄层：在硅衬底(1)的正面沉积二氧化硅层(2)；S2、生长氧化铝薄层：在二氧化硅层(2)上采用ALD镀膜方式镀上正面氧化铝层(6)；在硅衬底(1)的反面采用ALD镀膜方式镀上背面氧化铝层(4)；S3、生长钝化膜薄层：在正面氧化铝层(6)上镀上正面氮化硅层(3)；在背面氧化铝层(4)上镀上背面氮化硅层(5)。
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