WO2019148536A1 - 一种提升perc电池转换效率的正面膜层结构以及制备方法 - Google Patents

一种提升perc电池转换效率的正面膜层结构以及制备方法 Download PDF

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WO2019148536A1
WO2019148536A1 PCT/CN2018/075971 CN2018075971W WO2019148536A1 WO 2019148536 A1 WO2019148536 A1 WO 2019148536A1 CN 2018075971 W CN2018075971 W CN 2018075971W WO 2019148536 A1 WO2019148536 A1 WO 2019148536A1
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silicon nitride
nitride film
film layer
layer
film
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French (fr)
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张鹏
洪布双
杨蕾
王岚
闫涛
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通威太阳能（安徽）有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1868—Passivation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • the invention relates to the technical field of photovoltaic cells, in particular to a front film layer structure and a preparation method for improving the conversion efficiency of a PERC battery.
  • the conventional process route of PERC battery is basically mature, but the front coating process based on high resistance process needs to be improved and optimized.
  • the conventional P-type aluminum back field (BSF) battery front coating method is adopted.
  • the battery conversion efficiency and the front film structure are inseparable. Different film layers, film thickness and film refractive index have an impact on battery conversion efficiency.
  • the application number is “ 2011101824819” preparation method of double-layer silicon nitride anti-reflection film, preparation method of positive anti-reflection film of PERC battery with application number "2016111688207", front film structure of solar cell with application number "2013200124804", and application number
  • the PERC battery made by the front film structure of the above-mentioned several batteries has a low diffusion resistance, deep junction depth and poor short-wavelength response of the PERC battery.
  • the battery short-circuit current and open circuit voltage are both low, which cannot improve efficiency or reduce cost, which is a waste of resources.
  • the present invention provides the following technical solutions:
  • a front film structure for improving conversion efficiency of a PERC battery comprising a silicon wafer having a first silicon nitride film, a second silicon nitride film, and a third silicon nitride film deposited on the front surface of the silicon wafer a fourth silicon nitride film;
  • the first layer of silicon nitride film has a thickness of 10 ⁇ 2 nm and a refractive index of 2.67 ⁇ 0.05;
  • the second layer of silicon nitride film has a thickness of 15 ⁇ 2 nm and a refractive index of 1.91 ⁇ 0.05;
  • the third layer of silicon nitride film has a thickness of 5 ⁇ 2 nm and a refractive index of 1.33 ⁇ 0.05;
  • the fourth silicon nitride film has a thickness of 50 ⁇ 3 nm and a refractive index of 0.86 ⁇ 0.05.
  • a preparation method for preparing a front film structure for improving conversion efficiency of a PERC battery comprising the steps of:
  • pre-treatment of silicon wafer the silicon wafer is loaded into the graphite boat, placed in the deposition chamber, and the coating temperature, the radio frequency power and the duty ratio are adjusted;
  • the coating temperature is from 450 ° C to 500 ° C.
  • the radio frequency power is 80 ⁇ 5% of the ultimate power of the device.
  • the duty ratio is 1:12-1:15.
  • the invention improves the positive hydrogen passivation effect by improving the number of front coating layers, the different film thicknesses and the refractive indices of different film layers, and the film structure can improve the short-wave response of the battery, improve the light absorption of the battery, and achieve good battery performance.
  • the short-wave response increases the short-wavelength light absorption, solves the shortcomings of the weak absorption of the short-wave region of the conventional PERC battery, increases the short-circuit current of the battery, and finally realizes the improvement of the photoelectric conversion efficiency of the battery, and achieves the purpose of improving the efficiency.
  • the invention optimizes and improves the current new high-efficiency P-type back passivation battery (PERC) coating process, and the technical way does not need to add new equipment, only need to set and input new process in the traditional coating equipment, and the utility is good. It is very worth promoting.
  • POC P-type back passivation battery
  • Figure 1 is a schematic view showing the structure of a film layer of the present invention
  • FIG. 2 is a schematic view showing the preparation process of the film layer structure of the present invention.
  • the present invention provides a technical solution:
  • a front film structure for improving the conversion efficiency of a PERC battery comprising a silicon wafer 1 having a first silicon nitride film 2, a second silicon nitride film 3, and a third silicon nitride deposited on the front side of the silicon wafer 1 a film 4 and a fourth layer of silicon nitride film 5;
  • the first silicon nitride film 2 has a thickness of 10 ⁇ 2 nm and a refractive index of 2.67 ⁇ 0.05;
  • the second silicon nitride film 3 has a thickness of 15 ⁇ 2 nm and a refractive index of 1.91 ⁇ 0.05;
  • the third silicon nitride film 4 has a thickness of 5 ⁇ 2 nm and a refractive index of 1.33 ⁇ 0.05;
  • the fourth silicon nitride film 5 has a thickness of 50 ⁇ 3 nm and a refractive index of 0.86 ⁇ 0.05.
  • a preparation method for preparing a front film structure for improving conversion efficiency of a PERC battery comprising the steps of:
  • silicon wafer 1 pre-treatment the silicon wafer 1 is loaded into a graphite boat, placed in a deposition chamber, and the coating temperature, RF power, and duty ratio are adjusted;
  • the coating temperature is from 450 ° C to 500 ° C.
  • the RF power is 80 ⁇ 5% of the ultimate power of the device.
  • the duty ratio is 1:12-1:15.
  • the invention mainly achieves the purpose of improving the efficiency of the battery by the front plating process of the new high-resistance PERC battery.
  • the optical properties and chemical properties of the front silicon nitride film combined with the semiconductor professional software simulation to realize the following technical solutions: mainly the number of layers, different The thickness of the film layer and the refractive index of different film layers are designed to adjust the gas flow ratio, RF power, coating temperature, coating time and duty ratio (ie, pulse-to-switch ratio).
  • Thickness of different silicon nitride film layers 10 ⁇ 2 nm for the first layer; 15 ⁇ 2 nm for the second layer; 5 ⁇ 2 nm for the third layer; 50 ⁇ 3 nm for the fourth layer.
  • the first layer is 2.67 ⁇ 0.05; the second layer is 1.91 ⁇ 0.05; the third layer is 1.33 ⁇ 0.05; the fourth layer is 0.86 ⁇ 0.05.
  • Gas flow ratio control This control condition mainly achieves different refractive indices of different layers by controlling the flow ratio of special gas (silane and ammonia).
  • the first layer of silane ammonia gas ratio is 0.267
  • the second layer is 0.191
  • the third layer is 0.133
  • the fourth layer is 0.086.
  • RF power control The general RF power is controlled at 80 ⁇ 5% of the ultimate power of the device. It can also be fine-tuned according to the suitability of different devices and different layers, but it cannot exceed the device threshold.
  • coating temperature different back passivation equipment requires different coating temperature, it is necessary to adjust the total thickness of the silicon nitride film. However, the adjustment needs to maintain a stable internal temperature field.
  • the thickness of different film layers is obtained by controlling the coating time of different film layers.
  • the first layer is 110 ⁇ 20s; the second layer is 170 ⁇ 20s; the third layer is 50 ⁇ 20s; and the fourth layer is 600 ⁇ 20s.
  • Duty cycle According to the obtained different thickness values of the film layer, the duty ratio is finely adjusted to achieve different film thicknesses within the required range. Under normal circumstances, the duty ratio is controlled to be 1:12.

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Abstract

本发明公开了一种提升PERC电池转换效率的正面膜层结构，包括硅片，所述第一层氮化硅膜的厚度为10±2nm、折射率为2.67±0.05；所述第二层氮化硅膜的厚度为15±2nm、折射率为1.91±0.05；所述第三层氮化硅膜的厚度为5±2nm、折射率为1.33±0.05；所述第四层氮化硅膜的厚度为50±3nm、折射率为0.86±0.05。本发明还公开了一种制备方法，用于制备提升PERC电池转换效率的正面膜层结构，包括以下步骤：S1、硅片前处理；S2、制备第一层氮化硅膜；S3、制备第二层氮化硅膜；S4、制备第三层氮化硅膜；S5、制备第四层氮化硅膜。本发明的膜层结构能提升电池短波响应，提高电池光吸收，增加电池短路电流，最终实现电池光电转效率提高，实现提效将本的目的。

Description

一种提升PERC电池转换效率的正面膜层结构以及制备方法 技术领域
本发明涉及光伏电池技术领域，具体为一种提升PERC电池转换效率的正面膜层结构以及制备方法。
背景技术
随着电池技术的不断进步，实现高转换效率的路径一直被行业研究者追寻，目前PERC电池常规工艺路线基本成熟，但是基于高方阻工艺的正面镀膜工艺需要改进优化，目前PERC电池正面镀膜方式采用常规P型铝背场(BSF)电池正面镀膜方式。
对于PERC电池来说，电池转换效率和正面膜层结构有着密不可分的关系，不同的膜层数、膜层厚度以及膜层折射率均对电池转换效率有着影响，现有技术中，申请号为“2011101824819”的双层氮化硅减反射膜制备方法、申请号为“2016111688207”的一种PERC电池正面减反膜的制备方法、申请号为“2013200124804”的太阳能电池正面膜层结构、以及申请号为“2017200134734”的三层氮化硅薄膜电池片，通过上述几种电池的正面膜层结构制成的PERC电池，由于PERC电池扩散方阻较低、结深较深、电池短波响应差，所得电池短路电流和开路电压都较低，不能实现提高效率或降低成本，非常浪费资源。
发明内容
本发明的目的在于提供一种提升PERC电池转换效率的正面膜层结构以及制备方法，以解决上述背景技术中提出的问题。
为实现上述目的，本发明提供如下技术方案：
一种提升PERC电池转换效率的正面膜层结构，包括硅片，所述硅片的正面依次沉积有第一层氮化硅膜、第二层氮化硅膜、第三层氮化硅膜以及第四 层氮化硅膜；
所述第一层氮化硅膜的厚度为10±2nm、折射率为2.67±0.05；
所述第二层氮化硅膜的厚度为15±2nm、折射率为1.91±0.05；
所述第三层氮化硅膜的厚度为5±2nm、折射率为1.33±0.05；
所述第四层氮化硅膜的厚度为50±3nm、折射率为0.86±0.05。
一种制备方法，用于制备提升PERC电池转换效率的正面膜层结构，包括以下步骤：
S1、硅片前处理：将硅片装入石墨舟中，放入沉积腔室中，调整镀膜温度、射频功率以及占空比；
S2、制备第一层氮化硅膜：在沉积腔室中进行第一层氮化硅膜的沉积，第一层氮化硅膜的沉积气体流量比为氨气：硅烷＝1：0.267，第一层氮化硅膜的沉积时间为110±20s；
S3、制备第二层氮化硅膜：在沉积腔室中进行第二层氮化硅膜的沉积，第二层氮化硅膜的沉积气体流量比为氨气：硅烷＝1：0.191，第二层氮化硅膜的沉积时间为170±20s；
S4、制备第三层氮化硅膜：在沉积腔室中进行第三层氮化硅膜的沉积，第三层氮化硅膜的沉积气体流量比为氨气：硅烷＝1：0.133，第三层氮化硅膜的沉积时间为50±20s；
S5、制备第四层氮化硅膜：在沉积腔室中进行第四层氮化硅膜的沉积，第四层氮化硅膜的沉积气体流量比为氨气：硅烷＝1：0.086，第四层氮化硅膜的沉积时间为600±20s。
优选的，S1中，镀膜温度为450℃-500℃。
优选的，S1中，射频功率为设备极限功率的80±5％。
优选的，S1中，占空比为1：12-1：15。
与现有技术相比，本发明的有益效果是：
本发明通过正面镀膜层数、不同层膜厚度以及不同膜层折射率的改善，不但实现良好的正面氢钝化效果，而且膜层结构能提升电池短波响应，提高电池光吸收，实现电池良好的短波响应，增加短波区间光吸收，解决常规PERC电池短波区域吸收弱的缺点，增加电池短路电流，最终实现电池光电转效率的提高，实现提效将本的目的。
本发明通过对目前新型高效P型背钝化电池(PERC)镀膜工艺的优化与改善，技术途径不需添加新设备，只需在传统镀膜设备进行新工艺设置与输入即可，实用性很好，非常值得推广。
附图说明
图1为本发明的膜层结构示意图；
图2为本发明的膜层结构制备流程示意图。
图中：1硅片、2第一层氮化硅膜、3第二层氮化硅膜、4第三层氮化硅膜、5第四层氮化硅膜。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
请参阅图1-2，本发明提供一种技术方案：
一种提升PERC电池转换效率的正面膜层结构，包括硅片1，硅片1的正面依次沉积有第一层氮化硅膜2、第二层氮化硅膜3、第三层氮化硅膜4以及第四层氮化硅膜5；
第一层氮化硅膜2的厚度为10±2nm、折射率为2.67±0.05；
第二层氮化硅膜3的厚度为15±2nm、折射率为1.91±0.05；
第三层氮化硅膜4的厚度为5±2nm、折射率为1.33±0.05；
第四层氮化硅膜5的厚度为50±3nm、折射率为0.86±0.05。
一种制备方法，用于制备提升PERC电池转换效率的正面膜层结构，包括以下步骤：
S1、硅片1前处理：将硅片1装入石墨舟中，放入沉积腔室中，调整镀膜温度、射频功率以及占空比；
S2、制备第一层氮化硅膜2：在沉积腔室中进行第一层氮化硅膜2的沉积，第一层氮化硅膜2的沉积气体流量比为氨气：硅烷＝1：0.267，第一层氮化硅膜2的沉积时间为110±20s；
S3、制备第二层氮化硅膜3：在沉积腔室中进行第二层氮化硅膜3的沉积，第二层氮化硅膜3的沉积气体流量比为氨气：硅烷＝1：0.191，第二层氮化硅膜3的沉积时间为170±20s；
S4、制备第三层氮化硅膜4：在沉积腔室中进行第三层氮化硅膜4的沉积，第三层氮化硅膜4的沉积气体流量比为氨气：硅烷＝1：0.133，第三层氮化硅膜4的沉积时间为50±20s；
S5、制备第四层氮化硅膜5：在沉积腔室中进行第四层氮化硅膜5的沉积，第四层氮化硅膜5的沉积气体流量比为氨气：硅烷＝1：0.086，第四层氮化硅膜5的沉积时间为600±20s。
作为一个优选，S1中，镀膜温度为450℃-500℃。
作为一个优选，S1中，射频功率为设备极限功率的80±5％。
作为一个优选，S1中，占空比为1：12-1：15。
具体制备过程：
本发明主要通过新高方阻PERC电池正面镀膜工艺，达到提高电池效率目 的，根据正面氮化硅薄膜的光学性质和化学性质，结合半导体专业软件模拟仿真实现如下技术方案：主要为膜层数、不同膜层厚度和不同膜层折射率的设计，为实现该结构薄膜需调整气体流量比、射频功率、镀膜温度、镀膜时间和占空比(即脉冲开关比)。
一、结构参数设计
1、膜层数：4层。
2、不同氮化硅膜层厚度：第一层10±2nm；第二层15±2nm；第三层5±2nm；第四层50±3nm。
3、不同氮化硅膜层折射率：第一层2.67±0.05；第二层1.91±0.05；第三层1.33±0.05；第四层0.86±0.05。
二、结构参数控制
1、气体流量比控制：该控制条件主要通过控制特气(硅烷和氨气)流量比，实现不同膜层不同折射率。其中第一层硅烷氨气比为0.267，第二层为0.191，第三层为0.133，第四层为0.086。
2、射频功率控制：一般射频功率控制在设备极限功率的80±5％，也可根据不同设备和不同膜层适情况进行微调，但是不能超过设备阈值。
3、镀膜温度：不同背钝化设备需要不同镀膜温度，需通过对氮化硅膜总厚度的检测进行适当调整。但调整需管内温场保持稳定。
4、镀膜时间：通过控制不同膜层镀膜时间获得不同膜层的厚度。第一层110±20s；第二层170±20s；第三层50±20s；第四层600±20s。
5、占空比：根据所得不同膜层厚度值微调占空比，实现不同膜层厚度都在要求范围之内，一般情况下占空比控制为1:12。
制备过程各项数据记录，如下表1所示：
表1
Figure PCTCN2018075971-appb-000001
光电转换效率对比实验：
通过常规光电转换效率测试方法，对常规工艺和本发明的新工艺进行效率测试实验，实验数据如下表2所示：
表2
Figure PCTCN2018075971-appb-000002
根据上表2实验数据可得，本发明新工艺的光电转换效率相比于常规工艺，得到明显的提升，非常值得推广。
尽管已经示出和描述了本发明的实施例，对于本领域的普通技术人员而言，可以理解在不脱离本发明的原理和精神的情况下可以对这些实施例进行多种变化、修改、替换和变型，本发明的范围由所附权利要求及其等同物限定。

Claims (5)

  1. 一种提升PERC电池转换效率的正面膜层结构，包括硅片(1)，所述硅片(1)的正面依次沉积有第一层氮化硅膜(2)、第二层氮化硅膜(3)、第三层氮化硅膜(4)以及第四层氮化硅膜(5)，其特征在于：
    所述第一层氮化硅膜(2)的厚度为10±2nm、折射率为2.67±0.05；
    所述第二层氮化硅膜(3)的厚度为15±2nm、折射率为1.91±0.05；
    所述第三层氮化硅膜(4)的厚度为5±2nm、折射率为1.33±0.05；
    所述第四层氮化硅膜(5)的厚度为50±3nm、折射率为0.86±0.05。
  2. 一种制备方法，用于制备权利要求1所述的提升PERC电池转换效率的正面膜层结构，其特征在于，包括以下步骤：
    S1、硅片(1)前处理：将硅片(1)装入石墨舟中，放入沉积腔室中，调整镀膜温度、射频功率以及占空比；
    S2、制备第一层氮化硅膜(2)：在沉积腔室中进行第一层氮化硅膜(2)的沉积，第一层氮化硅膜(2)的沉积气体流量比为氨气：硅烷＝1：0.267，第一层氮化硅膜(2)的沉积时间为110±20s；
    S3、制备第二层氮化硅膜(3)：在沉积腔室中进行第二层氮化硅膜(3)的沉积，第二层氮化硅膜(3)的沉积气体流量比为氨气：硅烷＝1：0.191，第二层氮化硅膜(3)的沉积时间为170±20s；
    S4、制备第三层氮化硅膜(4)：在沉积腔室中进行第三层氮化硅膜(4)的沉积，第三层氮化硅膜(4)的沉积气体流量比为氨气：硅烷＝1：0.133，第三层氮化硅膜(4)的沉积时间为50±20s；
    S5、制备第四层氮化硅膜(5)：在沉积腔室中进行第四层氮化硅膜(5)的沉积，第四层氮化硅膜(5)的沉积气体流量比为氨气：硅烷＝1：0.086，第四层氮化硅膜(5)的沉积时间为600±20s。
  3. 根据权利要求2所述的一种制备方法，其特征在于：S1中，镀膜温度 为450℃-500℃。
  4. 根据权利要求2所述的一种制备方法，其特征在于：S1中，射频功率为设备极限功率的80±5％。
  5. 根据权利要求2所述的一种制备方法，其特征在于：S1中，占空比为1：12-1：15。
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