CN106449783A - 多晶硅太阳能电池高效多层减反射膜及其制备方法 - Google Patents
多晶硅太阳能电池高效多层减反射膜及其制备方法 Download PDFInfo
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- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 43
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 43
- 238000000034 method Methods 0.000 claims abstract description 31
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 29
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 29
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Abstract
本发明涉及一种多晶硅太阳能电池高效多层减反射膜及其制备方法，其特征是：包括依次设置于半导体衬底上的氧化硅、多层不同厚度和不同折射率的氮化硅层和氮氧化硅层。所述多晶硅太阳能电池高效多层减反射膜的制备方法，其特征是，包括以下步骤：（1）将经清洗制绒、扩散及刻蚀后的硅片放置于真空腔室中进行加热；（2）采用PECVD工艺在硅片表面沉积一层氧化硅层；（3）采用PECVD工艺在步骤（2）得到的氧化硅层的表面沉积多层不同厚度和不同折射率的氮化硅层；（4）采用PECVD工艺在步骤（3）得到的多氮化硅层的表面沉积氮氧化硅层。本发明所述减反射膜在满足抗PID衰减性能的同时具有较高的转换效率。
Description
技术领域
本发明涉及一种多晶硅太阳能电池高效多层减反射膜及其制备方法，属于太阳能电池制造工艺技术领域。
背景技术
在晶体硅太阳能电池的生产过程中，为了减少对光线的反射，一般在硅片表面镀上一层氮化硅薄膜。目前主流的镀膜工艺为双层氮化硅膜工艺，双层氮化硅膜具有良好的减反射效果，比单层氮化硅膜工艺效率方面有一定提升。但随着行业的发展，双层膜工艺已经不能满足效率提升的需求，而多层膜工艺较双层膜工艺在效率上得到进一步提升。
发明内容
本发明的目的是克服现有技术中存在的不足，提供一种多晶硅太阳能电池高效多层减反射膜，该减反射膜在满足抗PID衰减性能的同时具有较高的转换效率。
本发明还提供一种多晶硅太阳能电池高效多层减反射膜的制备方法，利用现有PECVD设备制备不同折射率的膜层，得到高效的多层减反射膜。
按照本发明提供的技术方案，所述多晶硅太阳能电池高效多层减反射膜，其特征是：包括依次设置于半导体衬底上的氧化硅、多层不同厚度和不同折射率的氮化硅层和氮氧化硅层。
在一个具体实施方式中，所述氮化硅层至少为四层。
在一个具体实施方式中，所述氮化硅层为四层。
在一个具体实施方式中，所述多层氮化硅层的总厚度为50～70nm。
在一个具体实施方式中，所述氧化硅层的厚度为3～10nm，折射率为1.86；所述氮氧化硅层的厚度为5～20nm，折射率为1.4～1.8。
在一个具体实施方式中，所述四层氮化硅层从下至的厚度和折射率分别为：第一层：厚度为5～10nm，折射率为2.3～2.4；第二层：厚度为10～20nm，折射率为2.2～2.25；第三层：厚度为20～30nm，折射率为2.1～2.2；第四层：厚度为30～35nm，折射率为2.0的氮化硅层。
所述多晶硅太阳能电池高效多层减反射膜的制备方法，其特征是，包括以下步骤：
（1）将经清洗制绒、扩散及刻蚀后的硅片放置于真空腔室中进行加热；
（2）采用PECVD工艺在硅片表面沉积一层氧化硅层；
（3）采用PECVD工艺在步骤（2）得到的氧化硅层的表面沉积多层不同厚度和不同折射率的氮化硅层；
（4）采用PECVD工艺在步骤（3）得到的多氮化硅层的表面沉积氮氧化硅层。
在一个具体实施方式中，所述步骤（3）的具体过程为：
首先采用PECVD工艺在步骤（2）得到的氧化硅层的表面沉积厚度为5～10nm，折射率为2.3～2.4的第一层氮化硅层；采用的气体为NH3和硅烷，NH3和硅烷的比例为3.5～4.5:1；
接着采用PECVD工艺在第一层氮化硅层的表面沉积厚度为10～20nm，折射率为2.2～2.25的第二层氮化硅层；采用的气体为NH3和硅烷，NH3和硅烷的比例为5～5.5:1；
然后采用PECVD工艺在第二层氮化硅层的表面沉积厚度为20～30nm，折射率为2.1～2.2的第三层氮化硅层；采用的气体为NH3和硅烷，NH3和硅烷的比例为5.5～6.5:1；
最后采用PECVD工艺在第三层氮化硅层的表面沉积厚度为30～35nm，折射率为2.0的第四层氮化硅层；采用的气体为NH3和硅烷，NH3和硅烷的比例为9～10:1。
在一个具体实施方式中，所述步骤（4）得到的氮氧化硅层的厚度为5～20nm，折射率为1.4～1.8的氮氧化硅层；采用的气体为SIH4、NH3和N2O，SIH4、NH3和N2O的比例为1:2～3:4～8。
在一个具体实施方式中，所述步骤（2）～步骤（4）的沉积过程中，压强为190～210Pa，功率为3000～3800W，温度为430～470℃。
本发明将常规太阳电池生产工序PECVD中双层氮化硅减反射膜替换为多层（6层）减反射膜。本发明利用目前产线配备的PECVD设备和特气，使用SIH4、NH3、N2O制备出SIN层和SINO层，解决了低折射率层的制备，匹配各层膜厚和折射率，得到最优的效率及颜色分布。采用本发明减反射膜产出的电池片，在满足抗PID衰减的同时具有较高的转换效率。
附图说明
图1为本发明所述多晶硅太阳能电池高效多层减反射膜的结构示意图。
具体实施方式
下面结合具体附图对本发明作进一步说明。
如图1所示：本发明所述多晶硅太阳能电池高效多层减反射膜，包括依次设置于半导体衬底1上的氧化硅2、四层氮化硅层3和氮氧化硅层4。
所述多晶硅太阳能电池高效多层减反射膜的制备方法，包括以下步骤：
（1）将经清洗制绒、扩散及刻蚀后的硅片放置于真空腔室中进行加热；
（2）采用PECVD工艺在硅片表面沉积一层厚度为3～10nm，折射率为1.86的氧化硅层2；采用的气体原料为NOx或O2，采用现有技术中的常规工艺；
（3）采用PECVD工艺在步骤（2）得到的氧化硅层2的表面沉积一层厚度为5～10nm，折射率为2.3～2.4的氮化硅层；采用的气体为NH3和硅烷，NH3和硅烷的比例为3.5～4.5:1；
（4）采用PECVD工艺在步骤（3）得到的氮化硅层的表面沉积一层厚度为10～20nm，折射率为2.2～2.25的氮化硅层；采用的气体为NH3和硅烷，NH3和硅烷的比例为5～5.5:1；
（5）采用PECVD工艺在步骤（4）得到的氮化硅层的表面沉积一层厚度为20～30nm，折射率为2.1～2.2的氮化硅层；采用的气体为NH3和硅烷，NH3和硅烷的比例为5.5～6.5:1；
（6）采用PECVD工艺在步骤（5）得到的氮化硅层的表面沉积一层厚度为30～35nm，折射率为2.0的氮化硅层；采用的气体为NH3和硅烷，NH3和硅烷的比例为9～10:1；
（7）采用PECVD工艺在步骤（6）得到的氮化硅层的表面沉积一层厚度为5～20nm，折射率为1.4～1.8的氮氧化硅层；采用的气体为SIH4、NH3和N2O，SIH4、NH3和N2O的比例为1:2～3:4～8；
上述沉积过程中，压强为190～210Pa，功率为3000～3800W，温度为430～470℃。
本发明将常规太阳电池生产工序PECVD中双层氮化硅减反射膜替换为多层（6层）减反射膜。本发明利用目前产线配备的PECVD设备和特气，使用SIH4、NH3、N2O制备出SIN层和SINO层，解决了低折射率层的制备，匹配各层膜厚和折射率，得到最优的效率及颜色分布。采用本发明减反射膜产出的电池片，在满足抗PID衰减的同时具有较高的转换效率。
Claims (10)
1.一种多晶硅太阳能电池高效多层减反射膜，其特征是：包括依次设置于半导体衬底（1）上的氧化硅（2）、多层不同厚度和不同折射率的氮化硅层（3）和氮氧化硅层（4）。
2.如权利要求1所述的多晶硅太阳能电池高效多层减反射膜，其特征是：所述氮化硅层（3）至少为四层。
3.如权利要求1所述的多晶硅太阳能电池高效多层减反射膜，其特征是：所述氮化硅层（3）为四层。
4.如权利要求1所述的多晶硅太阳能电池高效多层减反射膜，其特征是：所述多层氮化硅层（3）的总厚度为50～70nm。
5.如权利要求1所述的多晶硅太阳能电池高效多层减反射膜，其特征是：所述氧化硅层（2）的厚度为3～10nm，折射率为1.86；所述氮氧化硅层（4）的厚度为5～20nm，折射率为1.4～1.8。
6.如权利要求3所述的多晶硅太阳能电池高效多层减反射膜，其特征是：所述四层氮化硅层从下至的厚度和折射率分别为：第一层：厚度为5～10nm，折射率为2.3～2.4；第二层：厚度为10～20nm，折射率为2.2～2.25；第三层：厚度为20～30nm，折射率为2.1～2.2；第四层：厚度为30～35nm，折射率为2.0的氮化硅层。
7.一种多晶硅太阳能电池高效多层减反射膜的制备方法，其特征是，包括以下步骤：
（1）将经清洗制绒、扩散及刻蚀后的硅片放置于真空腔室中进行加热；
（2）采用PECVD工艺在硅片表面沉积一层氧化硅层；
（3）采用PECVD工艺在步骤（2）得到的氧化硅层的表面沉积多层不同厚度和不同折射率的氮化硅层；
（4）采用PECVD工艺在步骤（3）得到的多氮化硅层的表面沉积氮氧化硅层。
8.如权利要求7所述的多晶硅太阳能电池高效多层减反射膜的制备方法，其特征是：所述步骤（3）的具体过程为：
首先采用PECVD工艺在步骤（2）得到的氧化硅层的表面沉积厚度为5～10nm，折射率为2.3～2.4的第一层氮化硅层；采用的气体为NH3和硅烷，NH3和硅烷的比例为3.5～4.5:1；
接着采用PECVD工艺在第一层氮化硅层的表面沉积厚度为10～20nm，折射率为2.2～2.25的第二层氮化硅层；采用的气体为NH3和硅烷，NH3和硅烷的比例为5～5.5:1；
然后采用PECVD工艺在第二层氮化硅层的表面沉积厚度为20～30nm，折射率为2.1～2.2的第三层氮化硅层；采用的气体为NH3和硅烷，NH3和硅烷的比例为5.5～6.5:1；
最后采用PECVD工艺在第三层氮化硅层的表面沉积厚度为30～35nm，折射率为2.0的第四层氮化硅层；采用的气体为NH3和硅烷，NH3和硅烷的比例为9～10:1。
9.如权利要求7所述的多晶硅太阳能电池高效多层减反射膜的制备方法，其特征是：所述步骤（4）得到的氮氧化硅层的厚度为5～20nm，折射率为1.4～1.8的氮氧化硅层；采用的气体为SIH4、NH3和N2O，SIH4、NH3和N2O的比例为1:2～3:4～8。
10.如权利要求7所述的多晶硅太阳能电池高效多层减反射膜的制备方法，其特征是：所述步骤（2）～步骤（4）的沉积过程中，压强为190～210Pa，功率为3000～3800W，温度为430～470℃。
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