CN114400505A - Epitaxial structure for multi-wavelength long-edge emitting semiconductor laser - Google Patents
Epitaxial structure for multi-wavelength long-edge emitting semiconductor laser Download PDFInfo
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- CN114400505A CN114400505A CN202111582516.8A CN202111582516A CN114400505A CN 114400505 A CN114400505 A CN 114400505A CN 202111582516 A CN202111582516 A CN 202111582516A CN 114400505 A CN114400505 A CN 114400505A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 45
- 230000000694 effects Effects 0.000 claims description 6
- 230000005641 tunneling Effects 0.000 claims description 6
- 230000003287 optical effect Effects 0.000 abstract description 5
- 238000001451 molecular beam epitaxy Methods 0.000 description 6
- 238000011160 research Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000001344 confocal Raman microscopy Methods 0.000 description 1
- 239000002537 cosmetic Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000684 flow cytometry Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3401—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
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Abstract
The invention provides an epitaxial structure for a multi-wavelength long-edge emission semiconductor laser, which mainly solves the problems of complex optical path, complex structure and higher cost of the existing multi-wavelength laser. The epitaxial structure comprises an N-type substrate, a quantum well unit with an emergent wavelength of lambda 1, a first trap tunnel junction, a quantum well unit with an emergent wavelength of lambda 2, a second trap tunnel junction, a quantum well unit with an emergent wavelength of lambda 3 and a P-type contact layer which are sequentially arranged from bottom to top; the first trap tunnel junction is used for modulating light fields excited by the quantum well unit with the emitting wavelength of lambda 1 and the quantum well unit with the emitting wavelength of lambda 2; the second trap tunnel junction is used for modulating light fields excited by the quantum well unit with the emitting wavelength of lambda 2 and the quantum well unit with the emitting wavelength of lambda 3; the first trap tunnel junction and the second trap tunnel junction respectively comprise a P-type trap layer, a P-type heavily doped layer, an N-type heavily doped layer and an N-type trap layer which are sequentially arranged from bottom to top.
Description
Technical Field
The invention belongs to the field of semiconductor lasers, and particularly relates to an epitaxial structure for a multi-wavelength long-edge emission semiconductor laser.
Background
With the development of laser technology, lasers have been fully applied in various fields. In particular, semiconductor lasers have been widely used in the fields of material processing, medical cosmetology, laser radar, aerospace, and the like due to their characteristics of small size, high efficiency, easy integration, and maintenance-free. However, in many applications and researches, such as laser confocal scanning microscope, confocal micro-raman, flow cytometry and optogenetic fields, a single-wavelength laser cannot meet the requirements, and a multi-wavelength laser is required.
The conventional semiconductor laser is a single wavelength laser, and if a plurality of wavelengths of lasers are required in application, chips with different wavelengths need to be packaged together, then beam coupling is performed through a designed light path, and the lasers with different wavelengths are coupled into light to be output.
At present, in the application and research of a multi-wavelength laser, a plurality of single-wavelength semiconductor laser chips with different wavelengths are used for coupling, and due to the fact that a plurality of semiconductor laser chips with different wavelengths are used, a complex optical path needs to be designed, a plurality of lenses are used at the same time, and the application and research costs are greatly increased due to the use of various chips and various lenses.
Disclosure of Invention
The invention aims to solve the problems of complex optical path, complex structure and higher cost of the existing multi-wavelength laser and provides an epitaxial structure for a multi-wavelength long-edge emission semiconductor laser.
In order to achieve the above purpose, the technical scheme of the invention is as follows:
an epitaxial structure for a multi-wavelength long-edge emission semiconductor laser comprises an N-type substrate, a quantum well unit with an emergent wavelength of lambda 1, a first trap tunnel junction, a quantum well unit with an emergent wavelength of lambda 2, a second trap tunnel junction, a quantum well unit with an emergent wavelength of lambda 3 and a P-type contact layer which are sequentially arranged from bottom to top; the quantum well unit with the emitting wavelength of lambda 1 and the quantum well unit with the emitting wavelength of lambda 2 are connected in series through a first trap tunnel junction, and the first trap tunnel junction is used for modulating the light field excited by the quantum well unit with the emitting wavelength of lambda 1 and the quantum well unit with the emitting wavelength of lambda 2; the quantum well unit with the emitting wavelength of lambda 2 and the quantum well unit with the emitting wavelength of lambda 3 are connected in series through a second trap tunnel junction, and the second trap tunnel junction is used for modulating the light field excited by the quantum well unit with the emitting wavelength of lambda 2 and the quantum well unit with the emitting wavelength of lambda 3; the first trap tunnel junction and the second trap tunnel junction respectively comprise a P-type trap layer, a P-type heavily doped layer, an N-type heavily doped layer and an N-type trap layer which are sequentially arranged from bottom to top; the N-type trap layer and the N-type heavily doped layer act together to limit a high-order mode excited by a quantum well unit above the N-type trap layer in the N-type trap layer, and the high-order mode acts with the P-type heavily doped layer to form a tunneling effect; the P-type heavily doped layer and the P-type trap layer act together to limit a high-order mode excited by the quantum well unit below the P-type heavily doped layer in the P-type trap layer, and simultaneously act with the N-type heavily doped layer to form a tunneling effect to connect the upper quantum well unit and the lower quantum well unit.
Further, the lasing wavelength of the quantum well unit with the emission wavelength of λ 1 is 755nm, and the lasing wavelength of the quantum well unit with the emission wavelength of λ 2 is 808 nm; the lasing wavelength of the quantum well unit with the emission wavelength λ 3 is 1064 nm.
Furthermore, the quantum well unit with the emergent wavelength of lambda 1 comprises N-Al which are sequentially arranged from bottom to topx1GaAs layer, U-Alx2GaAs layer, Inx3Alx4GaAs layer, U-Alx2GaAs layer, P-Alx1And a GaAs layer.
Furthermore, the quantum well unit with the emergent wavelength of lambda 2 comprises N-Al which are sequentially arranged from bottom to topy1GaAs layer, U-Aly2GaAs layer, Iny3Aly4GaAs layer, U-Aly2GaAs layer, P-Aly1And a GaAs layer.
Furthermore, the quantum well unit with the emission wavelength of lambda 3 comprises N-Al which are sequentially arranged from bottom to topz1GaAs layer, U-Alz2GaAs layer, Inz3Alz4GaAs layer, U-Alz2GaAs layer, P-Alz1And a GaAs layer.
Compared with the prior art, the technical scheme of the invention has the following beneficial effects:
1. according to the invention, SCH-QW structures with different emission wavelengths are designed, SCH-QW structures with different wavelengths are connected in series by using a trap tunnel junction, an MOCVD (metal organic chemical vapor deposition) or MBE (molecular beam epitaxy) device is used for growing the designed epitaxial structure, and a semiconductor laser chip capable of emitting a mixture of several wavelengths is manufactured by a semiconductor laser chip manufacturing process so as to meet the application and research of a multi-wavelength laser.
2. The structure of the invention uses the trap tunnel junction to connect the SCH-QW structures which can lase at a plurality of wavelengths (lambda 1, lambda 2 and lambda 3) in series, the trap tunnel junction can modulate the optical field distribution among the quantum well units which can lase at lambda 1 and lambda 2 and lambda 3 and simultaneously connect two adjacent quantum well units, and then the semiconductor laser chip manufactured by the epitaxy can simultaneously lase at a plurality of wavelengths.
Drawings
FIG. 1 is a schematic view of an epitaxial structure for a multiple wavelength long-side emitting semiconductor laser according to the present invention;
fig. 2 is a schematic view of an epitaxial structure for a multiple wavelength long-side emitting semiconductor laser according to an embodiment of the present invention.
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings and specific embodiments. It should be understood by those skilled in the art that these embodiments are only for explaining the technical principle of the present invention and are not intended to limit the scope of the present invention.
The invention provides an epitaxial structure of a semiconductor laser device for lasing multiple wavelengths on a single chip, wherein a quantum well unit of each lasing wavelength and an adjacent quantum well unit are not isolated light-emitting units, the lasing wavelength of the adjacent quantum well units can be modulated through a trap tunnel junction, the trap tunnel junction plays two roles, firstly, the light field of the adjacent two quantum wells is modulated, secondly, the adjacent quantum well units are connected, and SCH-QW structures for lasing different wavelengths are connected in series through the trap tunnel junction, so that the single semiconductor laser device chip can simultaneously lase multiple wavelengths.
As shown in fig. 1, the epitaxial structure for a multiple wavelength long-side emitting semiconductor laser provided by the present invention includes, sequentially from bottom to top, an N-type substrate, a quantum well unit with an exit wavelength λ 1, a first trap tunnel junction, a quantum well unit with an exit wavelength λ 2, a second trap tunnel junction, a quantum well unit with an exit wavelength λ 3, and a P-type contact layer; the quantum well unit with the emitting wavelength of lambda 1 and the quantum well unit with the emitting wavelength of lambda 2 are connected in series through a first trap tunnel junction, and the first trap tunnel junction is used for modulating the light field excited by the quantum well unit with the emitting wavelength of lambda 1 and the quantum well unit with the emitting wavelength of lambda 2; the quantum well unit with the emitting wavelength of lambda 2 and the quantum well unit with the emitting wavelength of lambda 3 are connected in series through a second trap tunnel junction, and the second trap tunnel junction is used for modulating the light fields excited by the quantum well unit with the emitting wavelength of lambda 2 and the quantum well unit with the emitting wavelength of lambda 3.
As shown in FIG. 1, the quantum well unit with the emission wavelength of λ 1 includes N-Al sequentially arranged from bottom to topx1GaAs layer, U-Alx2GaAs layer, Inx3Alx4GaAs layer, U-Alx2GaAs layer, P-Alx1And a GaAs layer. The quantum well unit with the emergent wavelength of lambda 2 comprises N-Al which are sequentially arranged from bottom to topy1GaAs layer, U-Aly2GaAs layer, Iny3Aly4GaAs layer, U-Aly2GaAs layer, P-Aly1And a GaAs layer. Quantum well unit with emission wavelength of lambda 3Comprises N-Al arranged from bottom to top in sequencez1GaAs layer, U-Alz2GaAs layer, Inz3Alz4GaAs layer, U-Alz2GaAs layer, P-Alz1And a GaAs layer.
According to the invention, a quantum well structure (separate-complementary heterojunction quantum well: SCH-QW) with exit wavelengths of lambda 1, lambda 2 and lambda 3 is designed firstly, then 3 SCH-QW tunnel junctions with exit wavelengths of lambda 1, lambda 2 and lambda 3 are connected in series by using a trap tunnel junction (N +/P +), an epitaxial structure is grown by epitaxial equipment such as MOCVD (metal organic chemical vapor deposition) or MBE (molecular beam epitaxy) and then chip process manufacturing is carried out, so that a semiconductor laser chip with the exit wavelengths of lambda 1, lambda 2 and lambda 3 mixed can be manufactured, and the application and research of a multi-wavelength laser are met. The trap tunnel junction is composed of an N-type trap layer, an N-type heavily doped layer, a P-type heavily doped layer and a P-type trap layer. The N-type trap layer and the N-type heavily doped layer act together, so that a high-order mode excited by the quantum well unit can be limited in the N-type trap layer, and simultaneously acts with the P-type heavily doped layer to form a tunneling effect; the P-type heavily doped layer and the P-type trap layer act together, so that a high-order mode excited by the lower quantum well unit can be limited in the P-type trap layer, and simultaneously acts with the N-type heavily doped layer to form a tunneling effect to connect the upper quantum well unit and the lower quantum well unit.
Example one
As shown in FIG. 2, the invention firstly designs a heterojunction-limited quantum well structure (SCH-QW) with emission wavelengths of 755nm, 808nm and 1064nm, respectively, then connects 3 MOCVD-QWs with emission wavelengths of 755nm, 808nm and 1064nm in series by using a trap tunnel junction (N +/P +), and then generates an epitaxial structure by using an epitaxial device such as a (metallic organic chemical vapor deposition) or MBE (molecular beam epitaxy), and then performs chip process manufacturing to manufacture a semiconductor laser chip with mixed emission wavelengths of 755nm, 808nm and 1064nm, thereby meeting the application and research in the medical and cosmetic industry.
In the embodiment, three SCH-QW structures with lasing wavelengths of 755nm, 808nm and 1064nm are connected in series by using a trap tunnel junction, the trap tunnel junction can modulate the optical field distribution between quantum well units with lasing wavelengths of 1064nm and 808nm and between quantum well units with lasing wavelengths of 808nm and 755nm, and simultaneously connects two adjacent quantum well units, so that a semiconductor laser chip manufactured by using the epitaxy can simultaneously lase three wavelengths of 755nm, 808nm and 1064 n.
Claims (5)
1. An epitaxial structure for a multiple wavelength long edge emitting semiconductor laser, characterized in that: the quantum well structure comprises an N-type substrate, a quantum well unit with an emergent wavelength of lambda 1, a first trap tunnel junction, a quantum well unit with an emergent wavelength of lambda 2, a second trap tunnel junction, a quantum well unit with an emergent wavelength of lambda 3 and a P-type contact layer which are sequentially arranged from bottom to top;
the quantum well unit with the emitting wavelength of lambda 1 and the quantum well unit with the emitting wavelength of lambda 2 are connected in series through a first trap tunnel junction, and the first trap tunnel junction is used for modulating the light field excited by the quantum well unit with the emitting wavelength of lambda 1 and the quantum well unit with the emitting wavelength of lambda 2;
the quantum well unit with the emitting wavelength of lambda 2 and the quantum well unit with the emitting wavelength of lambda 3 are connected in series through a second trap tunnel junction, and the second trap tunnel junction is used for modulating the light field excited by the quantum well unit with the emitting wavelength of lambda 2 and the quantum well unit with the emitting wavelength of lambda 3;
the first trap tunnel junction and the second trap tunnel junction respectively comprise a P-type trap layer, a P-type heavily doped layer, an N-type heavily doped layer and an N-type trap layer which are sequentially arranged from bottom to top; the N-type trap layer and the N-type heavily doped layer act together to limit a high-order mode excited by a quantum well unit above the N-type trap layer in the N-type trap layer, and the high-order mode acts with the P-type heavily doped layer to form a tunneling effect; the P-type heavily doped layer and the P-type trap layer act together to limit a high-order mode excited by the quantum well unit below the P-type heavily doped layer in the P-type trap layer, and simultaneously act with the N-type heavily doped layer to form a tunneling effect to connect the upper quantum well unit and the lower quantum well unit.
2. An epitaxial structure for a multiple wavelength side emitting semiconductor laser according to claim 1, wherein: the lasing wavelength of the quantum well unit with the exit wavelength of lambda 1 is 755nm, and the lasing wavelength of the quantum well unit with the exit wavelength of lambda 2 is 808 nm; the lasing wavelength of the quantum well unit with the emission wavelength λ 3 is 1064 nm.
3. An epitaxial structure for a multiple wavelength side emitting semiconductor laser according to claim 1, wherein: the quantum well unit with the emergent wavelength of lambda 1 comprises N-Al which are sequentially arranged from bottom to topx1GaAs layer, U-Alx2GaAs layer, Inx3Alx4GaAs layer, U-Alx2GaAs layer, P-Alx1And a GaAs layer.
4. An epitaxial structure for a multiple wavelength side emitting semiconductor laser according to claim 1, wherein: the quantum well unit with the emergent wavelength of lambda 2 comprises N-Al which are sequentially arranged from bottom to topy1GaAs layer, U-Aly2GaAs layer, Iny3Aly4GaAs layer, U-Aly2GaAs layer, P-Aly1And a GaAs layer.
5. An epitaxial structure for a multiple wavelength side emitting semiconductor laser according to claim 1, wherein: the quantum well unit with the emergent wavelength of lambda 3 comprises N-Al which are sequentially arranged from bottom to topz1GaAs layer, U-Alz2GaAs layer, Inz3Alz4GaAs layer, U-Alz2GaAs layer, P-Alz1And a GaAs layer.
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Citations (5)
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|---|---|---|---|---|
| US20060193361A1 (en) * | 2005-02-09 | 2006-08-31 | The Furukawa Electric Co., Ltd. | Vertical cavity surface emitting laser device having a higher optical output power |
| CN202586076U (en) * | 2012-05-28 | 2012-12-05 | 中国电子科技集团公司第十三研究所 | Multi-laminated tunnel cascade semiconductor laser |
| CN110226268A (en) * | 2016-11-29 | 2019-09-10 | 莱瑟特尔公司 | Binode fibre coupled laser diode and correlation technique |
| US10573781B1 (en) * | 2017-08-28 | 2020-02-25 | Facebook Technologies, Llc | Light emitting diode with tunnel junction |
| CN113725731A (en) * | 2021-09-02 | 2021-11-30 | 深圳市中科芯辰科技有限公司 | Dual-wavelength vertical cavity surface emitting laser and preparation method thereof |
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- 2021-12-22 CN CN202111582516.8A patent/CN114400505A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060193361A1 (en) * | 2005-02-09 | 2006-08-31 | The Furukawa Electric Co., Ltd. | Vertical cavity surface emitting laser device having a higher optical output power |
| CN202586076U (en) * | 2012-05-28 | 2012-12-05 | 中国电子科技集团公司第十三研究所 | Multi-laminated tunnel cascade semiconductor laser |
| CN110226268A (en) * | 2016-11-29 | 2019-09-10 | 莱瑟特尔公司 | Binode fibre coupled laser diode and correlation technique |
| US10573781B1 (en) * | 2017-08-28 | 2020-02-25 | Facebook Technologies, Llc | Light emitting diode with tunnel junction |
| CN113725731A (en) * | 2021-09-02 | 2021-11-30 | 深圳市中科芯辰科技有限公司 | Dual-wavelength vertical cavity surface emitting laser and preparation method thereof |
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