CN202586076U - Multi-laminated tunnel cascade semiconductor laser - Google Patents
Multi-laminated tunnel cascade semiconductor laser Download PDFInfo
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- CN202586076U CN202586076U CN 201220243101 CN201220243101U CN202586076U CN 202586076 U CN202586076 U CN 202586076U CN 201220243101 CN201220243101 CN 201220243101 CN 201220243101 U CN201220243101 U CN 201220243101U CN 202586076 U CN202586076 U CN 202586076U
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Abstract
The utility model discloses a multi-laminated tunnel cascade semiconductor laser and belongs to the field of semiconductor lasers. The multi-laminated tunnel cascade semiconductor laser comprises 2-4 single-layer laser units which are connected perpendicularly; two adjacent single-layer laser units are in growth connection through a tunnel junction unit layer with a special structure according to a semiconductor crystal growth rule; and a tunnel junction unit comprises a highly-doped PN junction and a superlattice layer grown on the upper side or/and the lower side of the PN junction. The tunnel cascade semiconductor laser formed by the special tunnel junction with superlattices greatly improves output light power, and the optimized tunnel junction enables internal resistance and pressure drop at the position of the tunnel junction in the semiconductor laser to be lowered. Extended waveguide is added in the semiconductor laser, and a far field divergence angle of light output is greatly reduced. The multi-laminated tunnel cascade semiconductor laser has high economic benefit and facilitates miniaturization application of the high power semiconductor laser.
Description
Technical field
The utility model belongs to field of semiconductor lasers, particularly a kind of many laminations tunnel cascade semiconductor laser.
Background technology
Because high power semiconductor lasers has advantages such as volume is little, in light weight, efficient is high, the life-span is long, has been widely used in fields such as laser processing (punching, cutting, welding, Surface Machining, material modification etc.), laser medicine (diagnosis, treatment, operation, beauty treatment etc.), laser display and scientific research.
In order to realize little electric current high power work, must adopt the mode of chip series connection.The series connection of semiconductor chip is more than the parallel connection complicacy, is unfavorable for integrated.Traditional way is that the mode through physics stack realizes series connection, through separate chip stacked arrangement sintering a plurality of semiconductor lasers of connecting, through bonding linearly aligned chipset is connected then.The shortcoming of this mode has two: the method complex process of separate chip lamination sintering, and the rate of finished products and the reliability of device are low; Because the reason of die thickness and weld tabs (about 150um) strengthens the output facula of laser, and two-dimensional arrangements occurs, need two-dimentional shaping, be not suitable for using.
The tunnel cascade semiconductor laser is because its powerful output and the advantage that can realize multi-wavelength become the first-selection of making high power laser.The key technology tunnel junction is exactly that each laser is inserting highly doped p+ layer and N+ layer at the interface; This technology can be in the material epitaxy process directly with a plurality of laser epitaxial layer series connection, if a plurality of active areas through anti-inclined to one side tunnel junction cascade after, each that inject between laser two electrodes can be repeatedly compound at a plurality of active areas to the electron hole; Produce a plurality of photons; Its quantum efficiency is improved greatly, be implemented in and inject under the less current conditions, send stronger luminous power.The design of tunnel junction and quality directly influence resistance, voltage and the efficient of laser.Tunnel junction all was on the raising doping content, to work hard in the past, though can reduce resistance, meeting absorbing light after electronics and the hole diffusion reduces light extraction efficiency and power.In addition, there are problems such as resistance and overtension, the angle of divergence of light field crossover, tunnel junction be big in the past tunnel cascade laser.
The utility model content
The technical problem that the utility model will solve provides a kind of many laminations tunnel cascade semiconductor laser of high power small divergence angle; This semiconductor laser has high-power light output; Can reduce the angle of divergence of light field crossover and light output, and have less tunnel junction internal resistance and pressure drop.
For solving the problems of the technologies described above, the technical scheme that the utility model adopts is: a kind of many laminations tunnel cascade semiconductor laser comprises 2-4 individual layer laser element connected vertically; Connect through tunneling junction cell growth according to the growing semiconductor crystal rule between the adjacent two individual layer laser elements with special construction; Said tunneling junction cell comprise highly doped PN junction and by growth regularity at the PN junction upside or/and the superlattice layer of downside.
Said superlattice layer is highly doped type.
Said superlattice layer be according to the growing semiconductor crystal growth regularity in the P of the downside of highly doped PN junction type superlattice layer or/and the N type superlattice layer of upside.
Said PN junction is formed by highly doped p type semiconductor layer with by the n type semiconductor layer that the δ doping techniques generates.
Said many laminations tunnel cascade semiconductor laser comprises three individual layer laser elements.
The structure of each the individual layer laser element in said many laminations tunnel cascade semiconductor laser is identical or different.
Said individual layer laser element comprises following coating layer, following non-ducting layer, SQW, last non-ducting layer and the last coating layer mixed mixed from bottom to top successively.
Said down coating layer comprises from bottom to top first time coating layer that growth successively connects, expands ducting layer and second time coating layer down.
Said go up that coating layer comprises from bottom to top that growth successively connects first on coating layer, on expand coating layer on ducting layer and second.
The technique effect that adopts technique scheme to obtain is: the utility model adopts the particular tunnel knot that has superlattice to form the tunnel cascade semiconductor laser; Improved the Output optical power of semiconductor laser greatly, and the tunnel junction after optimizing makes that the internal resistance and the pressure drop thereof at tunnel junction place diminishes in the semiconductor laser; Through in semiconductor laser, adding the expansion waveguide, reduced the far-field divergence angle of light output greatly; The utlity model has high economic benefit, help the miniaturized application of high-power semiconductor laser.
Description of drawings
Fig. 1 is the concrete structure sketch map of individual layer laser element and tunneling junction cell among the utility model embodiment 1;
Fig. 2 is the structural representation of the utility model embodiment 1;
Fig. 3 is that tunnel junction and δ mix and suspend the VA characteristic curve comparison diagram of the tunnel junction that growth forms for 10 times among the embodiment 1;
Fig. 4 has the tunneling junction cell of special construction and the PI characteristic curve comparison diagram of ordinary crossing knot among the embodiment 1;
Fig. 5 is the far-field divergence angle comparison diagram of the semiconductor laser of embodiment 1 and conventional structure;
Fig. 6 is the structural representation of the first individual layer laser element among the utility model embodiment 2;
Fig. 7 is the structural representation of the utility model embodiment 2;
Wherein, 1, first time coating layer, 2, expand ducting layer, 3, second time coating layer down; 4, the following non-ducting layer of mixing, coating layer on 5, SQW, 6, go up the non-ducting layer of mixing, 7, first; 8, expand ducting layer on, coating layer on 9, second, 10, the individual layer laser element, 11, P type superlattice layer; 12, p type semiconductor layer, 13, n type semiconductor layer, 14, N type superlattice layer, 15, tunneling junction cell; 16, the first individual layer laser element, 17, first SQW, 18, the second individual layer laser element.
Embodiment
Embodiment 1
Know that by shown in Figure 1 many laminations tunnel cascade semiconductor laser comprises 3 individual layer laser elements 10 that structure connected vertically is identical; Connect through tunneling junction cell 15 growths according to the growing semiconductor crystal rule between the adjacent two individual layer laser elements 10 with special construction; Said tunneling junction cell 15 comprises highly doped PN junction and by the highly doped superlattice layer of growth regularity at PN junction upside and downside; Said superlattice layer comprises according to the N type superlattice layer 14 of growing semiconductor crystal growth regularity in the P of the downside of highly doped PN junction type superlattice layer 11 and upside; Said PN junction is formed by highly doped p type semiconductor layer 12 with by the n type semiconductor layer 13 that the δ doping techniques generates.
11-14 constitutes the tunneling junction cell 15 with special construction in the present embodiment.Said individual layer laser element 10 is the 900nm semiconductor laser, and said individual layer laser element 10 comprises following coating layer, following non-ducting layer 4, SQW 5, last non-ducting layer 6 and the last coating layer mixed mixed from bottom to top successively; Said down coating layer comprises from bottom to top first time coating layer 1 that growth successively connects, expands ducting layer 2 and second time coating layer 3 down; Said go up that coating layer comprises from bottom to top that growth successively connects first on coating layer 7, on expand coating layer 9 on ducting layer 8 and second; 1-9 constitutes an individual layer laser element 10 that is 900nm semiconductor laser, and whole many laminations tunnel cascade semiconductor laser is exactly that three identical 900nm semiconductor lasers of structure are formed by connecting two tunneling junction cells 15 with special construction.
Said in the present embodiment coating layer down is the N type; Adopt highly doped high aluminium component gallium aluminium arsenic material; Promptly first time coating layer 1 and second time coating layer 3 are highly doped high aluminium component gallium aluminium arsenic material; What this was two-layer its objective is that restriction light field transverse mode to resilient coating and substrate expansion, reduces the loss of light, also is the diffusion of limiting carrier.
The said ducting layer 2 of expansion down is the low-doped low al compsn gallium aluminium arsenic material of N type, and the angle of divergence that this layer adopts the method for mode expansion that the light of semiconductor laser is exported reduces.
The said non-down ducting layer 4 of mixing hangs down al compsn gallium aluminium arsenic material with the last non-ducting layer 6 of mixing for non-doping, its objective is the restriction of reinforcement to light field, reduces the far-field divergence angle of light beam, improves the beam quality of device.
Said SQW 5 is an indium gallium arsenic material, and its effect is the active area as semiconductor laser, and enough gains of light are provided, and the excitation wavelength of decision device and the useful life of device.
Said upward coating layer is the P type; Adopt non-doping to hang down al compsn gallium aluminium arsenic material, on promptly said first on the coating layer 7 and second coating layer 9 be highly doped high aluminium component gallium aluminium arsenic material, such structure can effectively hinder electron diffusion and drift; And restriction light field transverse mode is to the expansion of this layer; Thereby reduce the loss of light, promptly reduce potential barrier, reduce the voltage loss.
Said to go up expansion ducting layer 8 be low-doped low al compsn gallium aluminium arsenic material, and this layer is identical with the effect of expansion waveguide 2 down, also is the angle of divergence that the method for employing mode expansion reduces semiconductor laser.
Said PN junction is made up of highly doped p type semiconductor layer 12 and n type semiconductor layer 13; Highly doped p type semiconductor layer 12 adopts highly doped GaAs material; Highly doped n type semiconductor layer 13 adopts highly doped GaAs material, and the n type semiconductor layer 13 in this PN junction suspends growth by the δ doping techniques and forms for 40 times.The reverse voltage Billy of the tunnel junction of this kind structure obviously reduces with the reverse voltage that the δ doping techniques suspends the tunnel junction of 10 formation of growth, and concrete comparative result is as shown in Figure 3.
There are highly doped P type superlattice layer 11 and N type superlattice layer 14 in both sides at highly doped PN junction by the growing semiconductor crystal growth regularity.Highly doped P type superlattice layer 11 all adopts the GaAs and the gallium aluminium arsenic material in 5 highly doped cycles with N type superlattice layer 14, and purpose is to reduce the light field crossover.
By highly doped PN junction and grow in the tunneling junction cell with special construction 15 that the superlattice layer of PN junction both sides forms; The semiconductor laser that forms through 15 cascades of this kind tunneling junction cell is significantly improved than the power output of the common semiconductor laser that is only formed by the cascade of PN tunnel junction; Optical output power goes out 55W by in the past 20A and brings up to 59W, and concrete outcome is as shown in Figure 4; Simultaneously the output light field crossover of the bright many laminations tunnel cascade semiconductor laser that forms through this tunneling junction cell 15 of near field hot spot display list is less; The utility model is through adding expansion waveguide (on expand ducting layer 8 and expansion ducting layer 2 down), makes the far-field divergence angle of many laminations tunnel cascade semiconductor laser light output be reduced to 17 ° by 35 ° of ordinary construction, and concrete outcome is as shown in Figure 5.These characteristics makes the utility model compared with prior art have bigger technical advantage.
For individual layer laser element 10 is connected through tunneling junction cell 15, the distribution of material of each layer should be suitable with the distribution of material of tunneling junction cell 15 each layers in the individual layer laser element 10, should satisfy the growing semiconductor crystal rule.
Embodiment 2
Know and to know by Fig. 6 and Fig. 7; Different with embodiment 1 is present embodiment is by 2 individual layer laser elements, 10-the first individual layer laser element 16 and the second individual layer laser element 18, and these two laser elements connect through the tunneling junction cell 15 with special construction.
The structure of these two individual layer laser elements 10 is inequality; The first individual layer laser element 16 is the 940nm semiconductor laser; The second individual layer laser element 18 is the 980nm semiconductor laser; The level of the second individual layer laser element 18 distribute with embodiment 1 in the level distribution of individual layer laser element 10 (900nm semiconductor laser) identical; And the first individual layer laser element 16 is different with the level distribution of individual layer laser element 10 among the embodiment 1, and maximum difference is, in last coating layer and following coating layer, does not contain the expansion ducting layer; By shown in Figure 6, the first individual layer laser element 16 comprises successively that from bottom to top non-mixing non-ly on ducting layer, first SQW 17, the P type mixed coating layer on ducting layer and the P type under coating layer under the N type, the N type.
The structure of the tunneling junction cell 15 among the embodiment 2 also with embodiment 1 in different.The tunneling junction cell 15 of embodiment 2 only comprises a superlattice layer, and promptly tunneling junction cell 15 is formed (a P type superlattice layer also can only be arranged, superlattice layer can also for highly doped) by highly doped PN junction and the N type superlattice layer 14 that grows in the PN junction upside.
The layers of material of each individual layer laser element 10 design voluntarily according to the actual requirements in the present embodiment 2, embodiment 2 also can arrive the various technique effects of embodiment 1.
The utility model only provides two representative embodiment.Those skilled in the art can make the various semiconductor lasers that are suitable for practicality according to the design feature of the utility model as the case may be.
Claims (9)
1. the semiconductor laser of lamination tunnel cascade more than a kind comprises 2-4 individual layer laser element connected vertically (10); It is characterized in that connecting through tunneling junction cell (15) growth according to the growing semiconductor crystal rule between the adjacent two individual layer laser elements (10) with special construction; Said tunneling junction cell (15) comprise highly doped PN junction and by growth regularity at the PN junction upside or/and the superlattice layer of downside.
2. many laminations tunnel cascade semiconductor laser according to claim 1 is characterized in that said superlattice layer is highly doped type.
3. many laminations tunnel cascade semiconductor laser according to claim 1 and 2, it is characterized in that said superlattice layer for according to the growing semiconductor crystal growth regularity in the P of the downside of highly doped PN junction type superlattice layer (11) or/and the N type superlattice layer (14) of upside.
4. many laminations tunnel cascade semiconductor laser according to claim 1 and 2 is characterized in that said PN junction forms by highly doped p type semiconductor layer (12) with by the n type semiconductor layer (13) that the δ doping techniques generates.
5. many laminations tunnel cascade semiconductor laser according to claim 1 and 2 is characterized in that said many laminations tunnel cascade semiconductor laser comprises three individual layer laser elements (10).
6. many laminations tunnel cascade semiconductor laser according to claim 1 and 2 is characterized in that the structure of each the individual layer laser element (10) in said many laminations tunnel cascade semiconductor laser is identical or different.
7. many laminations tunnel cascade semiconductor laser according to claim 1 is characterized in that said individual layer laser element (10) comprises following coating layer, following non-ducting layer (4), SQW (5), last non-ducting layer (6) and the last coating layer mixed mixed from bottom to top successively.
8. many laminations tunnel cascade semiconductor laser according to claim 7 is characterized in that first time coating layer (1) that said down coating layer comprises from bottom to top growth successively and connect, expands ducting layer (2) and second time coating layer (3) down.
9. according to claim 7 or 8 described many laminations tunnel cascade semiconductor lasers, it is characterized in that said go up that coating layer comprises from bottom to top that growth successively connects first on coating layer (7), on expand coating layer (9) on ducting layer (8) and second.
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| CN 201220243101 CN202586076U (en) | 2012-05-28 | 2012-05-28 | Multi-laminated tunnel cascade semiconductor laser |
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| CN 201220243101 CN202586076U (en) | 2012-05-28 | 2012-05-28 | Multi-laminated tunnel cascade semiconductor laser |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105429001A (en) * | 2015-10-27 | 2016-03-23 | 西安电子科技大学 | Si/Ge superlattice quantum cascade laser and preparation method thereof |
| CN105429004A (en) * | 2015-12-30 | 2016-03-23 | 中国科学院半导体研究所 | Multi-active zone epitaxial structure, semiconductor laser adopting same and manufacturing method of multi-active zone epitaxial structure |
| CN110148644A (en) * | 2019-05-30 | 2019-08-20 | 扬州乾照光电有限公司 | A kind of multijunction solar cell and production method with quantum well structure tunnel junctions |
| CN110829180A (en) * | 2019-11-07 | 2020-02-21 | 杜菁菁 | High peak power 1550nm semiconductor laser diode chip |
| CN114400505A (en) * | 2021-12-22 | 2022-04-26 | 西安立芯光电科技有限公司 | Epitaxial structure for multi-wavelength long-edge emitting semiconductor laser |
-
2012
- 2012-05-28 CN CN 201220243101 patent/CN202586076U/en not_active Expired - Lifetime
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105429001A (en) * | 2015-10-27 | 2016-03-23 | 西安电子科技大学 | Si/Ge superlattice quantum cascade laser and preparation method thereof |
| CN105429004A (en) * | 2015-12-30 | 2016-03-23 | 中国科学院半导体研究所 | Multi-active zone epitaxial structure, semiconductor laser adopting same and manufacturing method of multi-active zone epitaxial structure |
| CN110148644A (en) * | 2019-05-30 | 2019-08-20 | 扬州乾照光电有限公司 | A kind of multijunction solar cell and production method with quantum well structure tunnel junctions |
| CN110148644B (en) * | 2019-05-30 | 2021-08-20 | 扬州乾照光电有限公司 | Multi-junction solar cell with quantum well structure tunneling junction and manufacturing method |
| CN110829180A (en) * | 2019-11-07 | 2020-02-21 | 杜菁菁 | High peak power 1550nm semiconductor laser diode chip |
| CN114400505A (en) * | 2021-12-22 | 2022-04-26 | 西安立芯光电科技有限公司 | Epitaxial structure for multi-wavelength long-edge emitting semiconductor laser |
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