CN105429001A - Si/Ge superlattice quantum cascade laser and preparation method thereof - Google Patents

Si/Ge superlattice quantum cascade laser and preparation method thereof Download PDF

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Publication number
CN105429001A
CN105429001A CN201510726305.5A CN201510726305A CN105429001A CN 105429001 A CN105429001 A CN 105429001A CN 201510726305 A CN201510726305 A CN 201510726305A CN 105429001 A CN105429001 A CN 105429001A
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silicon
quantum cascade
cascade laser
germanium
superlattice quantum
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CN105429001B (en
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舒斌
吴继宝
古牧
范林西
陈景明
张鹤鸣
宣荣喜
胡辉勇
宋建军
王斌
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Xidian University
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Xidian University
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/3027—IV compounds
    • H01S5/3031—Si
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3427—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in IV compounds

Abstract

The invention discloses a Si/Ge superlattice quantum cascade laser and a preparation method thereof. The laser successively comprises a silicon substrate, an Si0.5Ge0.5 buffer layer, Ge/Si superlattice and SiO2 from bottom to top; aluminum electrodes are deposited on the top of the Si/Ge superlattice and on the Si0.5Ge0.5 buffer layer; the thickness of the Si0.5Ge0.5 buffer layer is 300 nm; the Si0.5Ge0.5 buffer layer is a Ge/Si superlattice structure formed by 5nm silicon and 5nm germanium growing interactively; the Ge/Si proportion of the Si0.5Ge0.5 buffer layer is 1:1. The Si/Ge superlattice quantum cascade laser is compatible with a CMOS process, meets the germanium light source demand for light of different wavelengths, has the characteristics of higher photoelectric conversion efficiency and light stability, and simple and convenient processing, and provides a concrete structure and enforcement scheme for realizing an on-chip light source.

Description

Si/Ge superlattice quantum cascade laser and preparation method thereof
Technical field
The present invention relates to semi-conductor photoelectronic field, be specifically related to a kind of Si/Ge superlattice quantum cascade laser and preparation method thereof.
Background technology
Along with technical requirement improves day by day, the limit of the microfabrication of information processing hardware starts to display, and has fettered the growing of technology.In the past few decades in development, microelectronic technique according to Moore's Law progress always.Progressive most distinguishing feature is exactly that process is more and more less, and integrated level is more and more higher, and cost is more and more lower.But along with microelectronic technique size is advanced to nanoscale, the bottleneck that various physical effect is brought is also more and more obvious.In order to breakthrough bottleneck, researchers have focused on the field that combined with photoelectron technology by microelectronics, Here it is photoelectricity integrated (OEIC).
The unremitting effort of the semiconductor giants such as Intel, IBM, many Primary Components of silicon optoelectronic technology are able to realize on integrated circuit platform, comprise high-speed silicon optical modulator, detector and waveguide component and are obtained for breakthrough.But due to silicon be that indirect bandgap material causes being difficult to realize direct luminescence, therefore on sheet, light source does not have accomplished, and this is the biggest problem that silicon photon technology is all the time faced.
Silica-based optical communication and optoelectronic integrated technology an urgent demand obtain efficient integrated laser light source when low cost.Up to the present, the laser on silicon still relies on III-V material grow or be bonded on silicon chip.This can produce stability problem, and is unfavorable for industrial mass production and manufacture.On silicon chip, the III-V laser of extension is restricted on the life-span, and its manufacturing process is quite complicated.Due to mismatch problems and being restricted between silicon and III-V material when on bonding III-V laser to silicon chip.Furthermore, relative silicon CMOS technology, the output of III-V laser is quite low.
Summary of the invention
For solving the problem, the invention provides a kind of Si/Ge superlattice quantum cascade laser and preparation method thereof, can either CMOS technique compatible, the demand of germanium light source to different wavelengths of light can be realized again, and there is higher photoelectric conversion efficiency, photostability, processing is simple, convenient, provides a concrete structure and embodiment for realizing light source on sheet.
For achieving the above object, the technical scheme that the present invention takes is:
A kind of Si/Ge superlattice quantum cascade laser, comprises silicon substrate, Si from the bottom up successively 0.5ge 0.5resilient coating, silicon and germanium super crystal lattice and SiO 2, silicon and germanium super crystal lattice and SiO 2, both sides respectively symmetry deposit aluminium electrode.
Present invention also offers the preparation method of above-mentioned Si/Ge superlattice quantum cascade laser, comprise the following steps:
Under S1,420 DEG C of temperature conditions, by low molecule beam epitaxy methods on a silicon substrate growth thickness be the Si of 300nm 0.5ge 0.5resilient coating;
Under S2,420 DEG C of temperature conditions, by the Si of low temperature molecular beam epitaxy method at gained 0.5ge 0.5on resilient coating, growth thickness is the Ge material of 5nm;
Under S3,420 DEG C of temperature conditions, be the Si material of 5nm by low temperature molecular beam epitaxy method growth thickness on the Ge material of gained;
Under S4,520 DEG C of temperature conditions, be the Ge material of 5nm by low temperature molecular beam epitaxy method growth thickness on the Si material of gained;
S5, repetition step S3 and step S4, obtain the Si/Ge of 10-30 layer;
Under S6,900 DEG C of temperature conditions, in the structure of step S5 gained, grow by wet-oxygen oxidation the SiO that one deck is greater than 150nm 2;
S7, by Si/Ge and SiO of evaporation of metal technique at gained 2both sides deposition of aluminum electrode, obtains Si/Ge superlattice quantum cascade laser.
Wherein, described silicon germanium buffer is that the silicon of 5nm and the germanium intergrowth of 5nm form silicon and germanium super crystal lattice structure.
Wherein, described Si 0.5ge 0.5the SiGe ratio of resilient coating is 1: 1.
Wherein, described aluminium electrode is followed successively by titanium, aluminium from bottom to up, and process conditions are, titanium layer thickness is 20nm, and the speed of growth is aluminum layer thickness is that in 130nm, 10nm, growth rate is in 10nm to 130nm, growth rate is
The present invention has following beneficial effect:
Can either CMOS technique compatible, can realize again the demand of germanium light source to different wavelengths of light, and have higher photoelectric conversion efficiency, photostability, processing is simple, convenient, provides a concrete structure and embodiment for realizing light source on sheet.
Accompanying drawing explanation
Fig. 1 is the process meaning figure of step S1 in the embodiment of the present invention.
Fig. 2 is the machining sketch chart of step S2 in the embodiment of the present invention.
Fig. 3 is the machining sketch chart of step S3 in the embodiment of the present invention.
Fig. 4 is the super lattice structure of SiGe in the embodiment of the present invention.
Fig. 5 is the machining sketch chart of step S5 in the embodiment of the present invention.
Fig. 6 is the machining sketch chart of step S6 in the embodiment of the present invention.
Fig. 7 is the machining sketch chart of step S7 in the embodiment of the present invention.
Embodiment
In order to make objects and advantages of the present invention clearly understand, below in conjunction with embodiment, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.
Embodiments provide a kind of Si/Ge superlattice quantum cascade laser, comprise silicon substrate, Si successively from the bottom up 0.5ge 0.5resilient coating, silicon and germanium super crystal lattice and SiO 2, silicon and germanium super crystal lattice and SiO 2, both sides respectively symmetry deposit aluminium electrode.
As shown in figs. 1-7, the embodiment of the present invention additionally provides a kind of preparation method of Si/Ge superlattice quantum cascade laser, comprises the following steps:
Under S1,420 DEG C of temperature conditions, by low molecule beam epitaxy methods on a silicon substrate growth thickness be the Si of 300nm 0.5ge 0.5resilient coating; Described silicon germanium buffer is that the silicon of 5nm and the germanium intergrowth of 5nm form silicon and germanium super crystal lattice structure, and SiGe ratio is 1: 1.
Under S2,420 DEG C of temperature conditions, by the Si of low temperature molecular beam epitaxy method at gained 0.5ge 0.5on resilient coating, growth thickness is the Ge material of 5nm;
Under S3,520 DEG C of temperature conditions, be the Si material of 5nm by low temperature molecular beam epitaxy method growth thickness on the Ge material of gained;
Under S4,420 DEG C of temperature conditions, be the Ge material of 5nm by low temperature molecular beam epitaxy method growth thickness on the Si material of gained;
S5, repetition step S3 and step S4, obtain the Si/Ge of 10-30 layer;
Under S6,900 DEG C of temperature conditions, in the structure of step S5 gained, grow by wet-oxygen oxidation the SiO that one deck is greater than 150nm 2;
S7, by Si/Ge and SiO of evaporation of metal technique at gained 2both sides deposition of aluminum electrode, obtains Si/Ge superlattice quantum cascade laser.Described aluminium electrode is followed successively by titanium, aluminium from bottom to up, and process conditions are, titanium layer thickness is 20nm, and the speed of growth is aluminum layer thickness is that in 130nm, 10nm, growth rate is in 10nm to 130nm, growth rate is
The above is only the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.

Claims (5)

1. a Si/Ge superlattice quantum cascade laser, is characterized in that, comprises silicon substrate, silicon germanium buffer, silicon and germanium super crystal lattice and SiO successively from the bottom up 2, silicon and germanium super crystal lattice top and Si 0.5ge 0.5deposition of aluminum electrode on resilient coating.
2. a preparation method for Si/Ge superlattice quantum cascade laser, is characterized in that, comprises the following steps:
Under S1,420 DEG C of temperature conditions, by low molecule beam epitaxy methods on a silicon substrate growth thickness be the Si of 300nm 0.5ge 0.5resilient coating;
Under S2,420 DEG C of temperature conditions, by the Si of low temperature molecular beam epitaxy method at gained 0.5ge 0.5on resilient coating, growth thickness is the Ge material of 5nm;
Under S3,420 DEG C of temperature conditions, be the Si material of 5nm by low temperature molecular beam epitaxy method growth thickness on the Ge material of gained;
Under S4,520 DEG C of temperature conditions, be the Ge material of 5nm by low temperature molecular beam epitaxy method growth thickness on the Si material of gained;
S5, repetition step S3 and step S4, obtain the Si/Ge of 10-30 layer;
Under S6,900 DEG C of temperature conditions, in the structure of step S5 gained, grow by wet-oxygen oxidation the SiO that one deck is greater than 150nm 2;
S7, by evaporation of metal technique at the silicon and germanium super crystal lattice top of gained and Si 0.5ge 0.5deposition of aluminum electrode on resilient coating, obtains Si/Ge superlattice quantum cascade laser.
3. the preparation method of Si/Ge superlattice quantum cascade laser according to claim 2, is characterized in that, described silicon germanium buffer is that the silicon of 5nm and the germanium intergrowth of 5nm form silicon and germanium super crystal lattice structure.
4. the preparation method of Si/Ge superlattice quantum cascade laser according to claim 2, its feature is, described Si 0.5ge 0.5the SiGe ratio of resilient coating is 1: 1.
5. the preparation method of Si/Ge superlattice quantum cascade laser according to claim 2, its feature is, described aluminium electrode is followed successively by titanium, aluminium from bottom to up, and process conditions are, titanium layer thickness is 20nm, and the speed of growth is aluminum layer thickness is that in 130nm, 10nm, growth rate is in 10nm to 130nm, growth rate is
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107017556A (en) * 2017-04-10 2017-08-04 北京工业大学 QCL based on multilayer two-dimension material hetero-junctions
CN109449757A (en) * 2018-09-17 2019-03-08 西安电子科技大学 SiGe/Ge/SiGe double heterojunection laser and preparation method thereof
CN111446618A (en) * 2020-02-27 2020-07-24 电子科技大学 Three-end 8-shaped annular quantum cascade laser

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4959694A (en) * 1987-12-23 1990-09-25 British Telecommunications Public Limited Company Semiconductor heterostructures with SiGe material
US5442205A (en) * 1991-04-24 1995-08-15 At&T Corp. Semiconductor heterostructure devices with strained semiconductor layers
US5548128A (en) * 1994-12-14 1996-08-20 The United States Of America As Represented By The Secretary Of The Air Force Direct-gap germanium-tin multiple-quantum-well electro-optical devices on silicon or germanium substrates
US6154475A (en) * 1997-12-04 2000-11-28 The United States Of America As Represented By The Secretary Of The Air Force Silicon-based strain-symmetrized GE-SI quantum lasers
US6621841B1 (en) * 2002-04-23 2003-09-16 The United States Of America As Represented By The Secretary Of The Air Force Phonon-pumped semiconductor lasers
CN1643696A (en) * 2002-03-25 2005-07-20 克利公司 Doped group III-V nitride materials, and microelectronic devices and device precursor structures comprising same
US20070105251A1 (en) * 2005-10-28 2007-05-10 Massachusetts Institute Of Technology Method and structure of germanium laser on silicon
CN1964094A (en) * 1997-01-09 2007-05-16 日亚化学工业株式会社 Nitride semiconductor device
US7776642B2 (en) * 2008-05-15 2010-08-17 Wisconsin Alumni Research Foundation Quantum-well photoelectric device assembled from nanomembranes
CN102227046A (en) * 2011-05-25 2011-10-26 北京化工大学 GaN (gallium nitride)-based semiconductor laser and manufacturing method thereof
CN202586076U (en) * 2012-05-28 2012-12-05 中国电子科技集团公司第十三研究所 Multi-laminated tunnel cascade semiconductor laser
CN103797668A (en) * 2011-08-02 2014-05-14 独立行政法人理化学研究所 Quantum cascade laser element

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4959694A (en) * 1987-12-23 1990-09-25 British Telecommunications Public Limited Company Semiconductor heterostructures with SiGe material
US5442205A (en) * 1991-04-24 1995-08-15 At&T Corp. Semiconductor heterostructure devices with strained semiconductor layers
US5548128A (en) * 1994-12-14 1996-08-20 The United States Of America As Represented By The Secretary Of The Air Force Direct-gap germanium-tin multiple-quantum-well electro-optical devices on silicon or germanium substrates
CN1964094A (en) * 1997-01-09 2007-05-16 日亚化学工业株式会社 Nitride semiconductor device
US6154475A (en) * 1997-12-04 2000-11-28 The United States Of America As Represented By The Secretary Of The Air Force Silicon-based strain-symmetrized GE-SI quantum lasers
CN1643696A (en) * 2002-03-25 2005-07-20 克利公司 Doped group III-V nitride materials, and microelectronic devices and device precursor structures comprising same
US6621841B1 (en) * 2002-04-23 2003-09-16 The United States Of America As Represented By The Secretary Of The Air Force Phonon-pumped semiconductor lasers
US20070105251A1 (en) * 2005-10-28 2007-05-10 Massachusetts Institute Of Technology Method and structure of germanium laser on silicon
US7776642B2 (en) * 2008-05-15 2010-08-17 Wisconsin Alumni Research Foundation Quantum-well photoelectric device assembled from nanomembranes
CN102227046A (en) * 2011-05-25 2011-10-26 北京化工大学 GaN (gallium nitride)-based semiconductor laser and manufacturing method thereof
CN103797668A (en) * 2011-08-02 2014-05-14 独立行政法人理化学研究所 Quantum cascade laser element
CN202586076U (en) * 2012-05-28 2012-12-05 中国电子科技集团公司第十三研究所 Multi-laminated tunnel cascade semiconductor laser

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
H.PRESTING: "Sb doping and electrical characteristics of ultrathin SinGem superlattices", 《JOURNAL OF APPLIED PHYSICS》 *
季振国: "锗/硅短周期超晶格的X射线双晶衍射研究", 《浙江大学学报》 *
戴瑛: "锗/硅应变层超晶格及其应用", 《山东工业大学学报》 *
盛篪: "《硅锗超晶格及低维量子结构》", 31 August 2004, 上海科学技术出版社 *
盛篪: "在Ge和SiGe复合缓冲层上生长高质量Ge/Si超晶格", 《半导体学报》 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107017556A (en) * 2017-04-10 2017-08-04 北京工业大学 QCL based on multilayer two-dimension material hetero-junctions
CN107017556B (en) * 2017-04-10 2019-12-13 北京工业大学 Quantum cascade laser based on multilayer two-dimensional material heterojunction
CN109449757A (en) * 2018-09-17 2019-03-08 西安电子科技大学 SiGe/Ge/SiGe double heterojunection laser and preparation method thereof
CN111446618A (en) * 2020-02-27 2020-07-24 电子科技大学 Three-end 8-shaped annular quantum cascade laser

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