CN114361247A - 沟槽栅金属氧化物半导体场效应管及其制备方法 - Google Patents

沟槽栅金属氧化物半导体场效应管及其制备方法 Download PDF

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Publication number
CN114361247A
CN114361247A CN202010418876.3A CN202010418876A CN114361247A CN 114361247 A CN114361247 A CN 114361247A CN 202010418876 A CN202010418876 A CN 202010418876A CN 114361247 A CN114361247 A CN 114361247A
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CN
China
Prior art keywords
region
conductive structure
source
trench
doped
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Pending
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CN202010418876.3A
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English (en)
Chinese (zh)
Inventor
方冬
肖魁
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
China Resources Microelectronics Chongqing Ltd
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China Resources Microelectronics Chongqing Ltd
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Application filed by China Resources Microelectronics Chongqing Ltd filed Critical China Resources Microelectronics Chongqing Ltd
Priority to CN202010418876.3A priority Critical patent/CN114361247A/zh
Priority to PCT/CN2020/140672 priority patent/WO2021232813A1/fr
Publication of CN114361247A publication Critical patent/CN114361247A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
CN202010418876.3A 2020-05-18 2020-05-18 沟槽栅金属氧化物半导体场效应管及其制备方法 Pending CN114361247A (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN202010418876.3A CN114361247A (zh) 2020-05-18 2020-05-18 沟槽栅金属氧化物半导体场效应管及其制备方法
PCT/CN2020/140672 WO2021232813A1 (fr) 2020-05-18 2020-12-29 Transistor à effet de champ à semi-conducteur à oxyde métallique à grille en tranchée et son procédé de fabrication

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202010418876.3A CN114361247A (zh) 2020-05-18 2020-05-18 沟槽栅金属氧化物半导体场效应管及其制备方法

Publications (1)

Publication Number Publication Date
CN114361247A true CN114361247A (zh) 2022-04-15

Family

ID=78709140

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202010418876.3A Pending CN114361247A (zh) 2020-05-18 2020-05-18 沟槽栅金属氧化物半导体场效应管及其制备方法

Country Status (2)

Country Link
CN (1) CN114361247A (fr)
WO (1) WO2021232813A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114420636A (zh) * 2021-12-22 2022-04-29 深圳深爱半导体股份有限公司 半导体器件结构及其制备方法
CN114582975B (zh) * 2022-02-11 2024-10-18 湖南大学 一种具有低比导通电阻的SiC MOSFET器件及其制备方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8022474B2 (en) * 2008-09-30 2011-09-20 Infineon Technologies Austria Ag Semiconductor device
US8067800B2 (en) * 2009-12-28 2011-11-29 Force Mos Technology Co., Ltd. Super-junction trench MOSFET with resurf step oxide and the method to make the same
US8648413B2 (en) * 2009-12-28 2014-02-11 Force Mos Technology Co., Ltd. Super-junction trench MOSFET with multiple trenched source-body contacts
CN103137698B (zh) * 2011-11-23 2016-04-27 力士科技股份有限公司 一种金属氧化物半导体场效应晶体管及制造方法
CN102610643B (zh) * 2011-12-20 2015-01-28 成都芯源系统有限公司 沟槽金属氧化物半导体场效应晶体管器件
JP2013258327A (ja) * 2012-06-13 2013-12-26 Toshiba Corp 半導体装置及びその製造方法
JP5715604B2 (ja) * 2012-09-12 2015-05-07 株式会社東芝 電力用半導体素子

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Publication number Publication date
WO2021232813A1 (fr) 2021-11-25

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