CN114326170A - Method for processing bonded substrate - Google Patents

Method for processing bonded substrate Download PDF

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Publication number
CN114326170A
CN114326170A CN202111110373.0A CN202111110373A CN114326170A CN 114326170 A CN114326170 A CN 114326170A CN 202111110373 A CN202111110373 A CN 202111110373A CN 114326170 A CN114326170 A CN 114326170A
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China
Prior art keywords
substrate
bonded
removal target
target portion
processing
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CN202111110373.0A
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Chinese (zh)
Inventor
山本悠
武田真和
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Mitsuboshi Diamond Industrial Co Ltd
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Mitsuboshi Diamond Industrial Co Ltd
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Publication of CN114326170A publication Critical patent/CN114326170A/en
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  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Perforating, Stamping-Out Or Severing By Means Other Than Cutting (AREA)
  • Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
  • Dicing (AREA)

Abstract

The invention provides a processing method of bonded substrates, which can expose the part of each bonded substrate which is the terminal part in the state of a mother substrate. The method for processing a bonded substrate of a first substrate and a second substrate comprises the following steps: setting a removal target portion in which a cross section perpendicular to an extending direction of a non-contact space is narrower as it goes to the non-contact space, in a portion of a second substrate along the strip-shaped non-contact space between the second substrate and a first substrate; a scribing step of forming a scribe line on the non-bonding surface of the second substrate and extending a crack from the scribe line along a boundary surface of the removal target portion; a breaking step of abutting the breaking bar from the first substrate side and further extending the crack to separate the removal target portion from the second substrate at the boundary surface; and a removing step of removing the divided removal target portion to expose a portion of the first substrate that defines the non-contact space.

Description

Method for processing bonded substrate
Technical Field
The present invention relates to processing of a bonded substrate, and more particularly to processing of a mother substrate (bonded mother substrate) in which individual pieces obtained by division are used as bonded substrates.
Background
For example, as a method for obtaining a bonded substrate used for a substrate for a liquid crystal panel or the like, a method of dividing a mother substrate (bonded mother substrate) at a predetermined position is widely used, in which a portion in which a predetermined sealing member is sealed and a sealing portion formed by a sealing member are regularly provided, and 2 large-sized glass substrates are bonded by the sealing member to form a mother substrate (bonded mother substrate).
In the process of producing such bonded substrates, a process may be performed in which one end portion (end material portion) of 2 glass substrates constituting each bonded substrate is removed to expose a portion of the other glass substrate facing the end material portion. In many cases, since a terminal portion for electrical connection is provided in the exposed portion, this processing is also called terminal lead-out.
Conventionally, such terminal drawing processing has been performed as a part of a process of dividing and dicing a mother substrate (for obtaining individual pieces of bonded substrates) (for example, see patent documents 1 and 2).
Further, a method of cutting a portion surrounded by a closed curve from a glass single plate using cutter wheels having different cutting edge angles is also known (for example, see patent document 3).
Prior art documents
Patent document
Patent document 1: japanese patent laid-open No. 2014-214053
Patent document 2: japanese patent laid-open No. 2014-214054
Patent document 3: japanese laid-open patent publication No. 7-223828
Disclosure of Invention
Problems to be solved by the invention
The conventional terminal lead-out process as disclosed in patent documents 1 and 2 is performed after so-called cross dicing in which two substrates constituting a mother substrate are divided in the vertical and horizontal 2 directions.
However, recently, there are technical demands as follows: it is desirable to maintain the state of the mother substrate, that is, to expose a portion to be a terminal portion of each bonded substrate in the mother substrate without cutting at least one substrate of the mother substrate crosswise.
On the other hand, patent document 3 discloses only a method of cutting a portion surrounded by a closed curve from a single plate, and does not disclose or suggest any way of exposing a terminal portion of a bonded substrate.
The present invention has been made in view of the above problems, and an object thereof is to provide a method for processing bonded substrates, which can expose portions to be terminal portions of the respective bonded substrates in a state of a mother substrate.
Means for solving the problems
In order to solve the above problem, the invention according to claim 1 is a method for processing a bonded substrate in which a first substrate and a second substrate are bonded to each other, the bonded substrate including a strip-shaped non-contact space between the first substrate and the second substrate, the first substrate and the second substrate being in non-contact with each other, the method for processing the bonded substrate including: a removal target portion setting step of setting a removal target portion in a portion of the second substrate along the non-contact space, the removal target portion being narrower as a cross section perpendicular to an extending direction of the non-contact space extends toward the non-contact space; a scribing step of forming a scribe line on a surface of the second substrate to which the first substrate is not bonded along an intersection line with at least one of a pair of boundary surfaces of the removal target portion, and extending a crack from the scribe line along the boundary surface; a breaking step of abutting a breaking bar against the first substrate side of the bonded substrate subjected to the scribing step and further pressing the breaking bar in the bonded substrate, thereby spreading the crack along the boundary surface and dividing the removal target portion from the second substrate at the boundary surface; and a removing step of removing the removal target portion divided by the breaking step to expose a portion of the first substrate that defines the non-contact space.
The invention of claim 2 is the method of processing a bonded substrate according to claim 1, wherein the removal target portion is set to be tapered in the removal target portion setting step, the scribing step forms the scribe line along an intersection with each of the pair of boundary surfaces, and extends a crack from the scribe line along each of the pair of boundary surfaces, and the breaking step extends the crack along each of the pair of boundary surfaces.
The invention described in claim 3 is the method of processing a bonded substrate described in claim 1 or 2, wherein in the scribing step, the scribing wheel having different inclination angles of the two blade surfaces of the ridge line constituting the cutting edge with respect to a plane including the ridge line is pressed and rolled along the intersecting line in a posture in which one of the two blade surfaces having a smaller inclination angle with respect to the plane is positioned on the side of the removal target portion, thereby forming the scribing line.
The invention of claim 4 is the method of processing a bonded substrate according to claim 3, wherein an angle formed by each of the pair of boundary surfaces with the thickness direction of the bonded substrate is 3 ° to 30 °, when a smaller one of the inclination angles of each of the two blade surfaces with respect to the plane is an angle θ 1 and a larger one thereof is an angle θ 2, the angle θ 1 is 45 ° to 75 °, the angle θ 2 is 55 ° to 80 °, and the angle difference θ 2 — θ 1 is 5 ° to 25 °.
The invention of claim 5 is the method of processing a bonded substrate according to claim 4, wherein the angle difference θ 2- θ 1 is 10 ° to 20 °.
The invention according to claim 6 is the method for processing a bonded substrate according to any one of claims 1 to 5, wherein in the breaking step, a holding tape is attached to a surface of the first substrate to which the second substrate is not bonded, and the breaking bar is brought into contact with an upper surface of the holding tape.
The invention described in claim 7 is the method for processing a bonded substrate according to any one of claims 1 to 6, wherein in the removing step, the removal target portion is removed from the bonded substrate by attaching the removal target portion to the adhesive member of a jig having an adhesive member at an end portion thereof.
The invention of claim 8 is the method for processing a bonded substrate according to any one of claims 1 to 7, wherein the first substrate and the second substrate are made of different materials.
Effects of the invention
According to the inventions of claims 1 to 8, in the bonded (mother) substrate in which 2 substrates are bonded, one substrate of the bonded mother substrates that divides the non-contact space is removed from the band-shaped non-contact space provided between the two substrates, whereby the other substrate of the bonded substrates that similarly divides the non-contact space can be exposed.
Drawings
Fig. 1 is a schematic plan view of a bonded mother substrate 1.
Fig. 2 is a partial schematic cross-sectional view of the bonded mother substrate 1.
Fig. 3 is a schematic plan view showing a processing position of the bonded mother substrate 1.
Fig. 4 is a partially schematic cross-sectional view showing a processing position of the bonded mother substrate 1.
Fig. 5 is a diagram showing a state of scribing processing.
Fig. 6 is a view showing the bonded mother substrate 1 after the scribing process.
Fig. 7 is a diagram showing a case of the fracture processing.
Fig. 8 is a view showing the bonded mother substrate 1 after the breaking process.
Fig. 9 is a diagram showing a case of extended pickup in stages.
Fig. 10 is a diagram showing a case of extended pickup in stages.
Fig. 11 is a diagram showing a case of extended pickup in stages.
Fig. 12 is a diagram showing a case of extended pickup in stages.
Fig. 13 is a diagram for explaining an effect of performing the extended pickup.
Fig. 14 is a view showing the bonded mother substrate 1 after all the removal target portions 9 are removed.
Description of reference numerals
1 laminating mother substrate
2 first brittle material substrate
2f non-contact area
3 second brittle material substrate
4 enclosing region
5 sealing part
6 sealing part
8 non-contact space
9 removing the object part
9a, 9b (excluding the target part) boundary surface
9f (of the portion to be removed)
9s (of the removal target portion) divided surface
100 scoring apparatus
102 scoring wheel
102a, 102b (of the scoring wheel)
102e (of the scoring wheel)
102r (of the tip of the scoring wheel)
200 breaking device
202 breaking bar
202e (of breaking bar) nose
300 expansion device
302 fixed component
303 pick-up clamp
303e (of the pick-up jig) lower end face
AT adhesive member
CR crack
ET extension band
SL scribe lines.
Detailed Description
< overview of mother substrate bonding >
Fig. 1 is a schematic plan view of a bonded mother substrate 1 to be processed in the present embodiment, and fig. 2 is a partial schematic cross-sectional view of the bonded mother substrate 1.
The bonded mother substrate 1 has substantially the following structure: in an encapsulation region 4 provided between a first brittle material substrate 2 and a second brittle material substrate 3 arranged so that their main surfaces face each other, a sealing portion 5 made of a predetermined encapsulation member (for example, liquid crystal or resin) is encapsulated by a sealing portion 6 made of a predetermined encapsulation member (for example, resin such as epoxy resin). Further, the electrode 7 and the like may be provided in the sealing portion 5.
As the brittle material of the first brittle material substrate 2, a glass material such as silicon, alkali-free glass, or quartz glass can be exemplified. As the brittle material of the second brittle material substrate 3, a glass material such as alkali-free glass can be exemplified. The thickness of the first glass substrate 2 is, for example, about 0.1mm to 1.0mm, and the thickness of the second glass substrate 3 is about 0.1mm to 1.0 mm. The planar dimensions (one side if rectangular, and the diameter if circular) of both are about 200mm to 500 mm.
More specifically, as shown in fig. 1, the sealing portion 5 whose periphery is sealed by the sealing portion 6 is repeatedly provided in a configurable range in 2 directions (a first direction and a second direction) orthogonal to each other in a plane where the mother substrate 1 is bonded. In fig. 1 and subsequent drawings, XYZ coordinates of a right-handed system are plotted with the first direction as an X-axis direction, the second direction as a Y-axis direction, and the vertical direction as a Z-axis direction.
In the embodiment, the sealing portions 5 and the sealing portions 6 sealing the peripheries thereof are collectively referred to as a unit sealing region. At least the unit seal regions (actually, the sealing portions 6) adjacent to each other in the first direction are continuous, but the adjacent unit seal regions are separated from each other at a predetermined interval in a second direction orthogonal to the first direction. In other words, a linear (band-shaped) non-contact space 8 extending in the X-axis direction is formed between adjacent unit seal regions.
In addition, in the non-contact space 8, the first glass substrate 2 and the second glass substrate 3 are also separated in the Z-axis direction without passing through the unit sealing region. Hereinafter, the portion of the first glass substrate 2 exposed to the relevant non-contact space 8 is particularly referred to as a non-contact region 2 f.
In the bonded mother substrate 1 having the above-described structure, each unit sealing region and a predetermined range of at least the first brittle material substrate 2 and the second brittle material substrate 3 sandwiching the unit sealing region constitute a unit of structure of each bonded substrate. In other words, the structural unit repeatedly exists in two directions orthogonal to each other. By dividing (singulating) the bonded mother substrate 1 so that these constituent units are separated from each other, a large number of bonded substrates can be obtained.
In other words, the bonded mother substrate 1 is a type of bonded substrate which is supposed to be divided in a subsequent step. However, for the sake of convenience of distinction, in the present embodiment, the bonded substrate assumed to be divided in this manner is referred to as a bonded mother substrate.
If the bonded substrate obtained by dividing the bonded mother substrate 1 is a liquid crystal substrate (in the case where a liquid crystal is sealed as a sealing member in the sealing portion 5), a terminal portion for ensuring electrical connection between the liquid crystal substrate and the outside is usually provided in the noncontact region 2 f.
< brief summary of processing >
Fig. 3 is a schematic plan view showing a processing position of the bonded mother substrate 1 in the processing method according to the present embodiment, and fig. 4 is a partial schematic cross-sectional view of the bonded mother substrate 1 showing the relevant processing position.
In the embodiment, as shown in fig. 4, the second brittle material substrate 3 is processed to remove the portion to be removed 9 set at a position facing the non-contact region 2f of the first brittle material substrate 2 in the Z-axis direction. As shown in fig. 3, when the mother substrate 1 is bonded in a plan view, the relevant removal target portion 9 is a linear (band-shaped) region extending in the X-axis direction.
As shown in fig. 4, the distance between the pair of side interface surfaces 9a and 9b of the removal target portion 9 extending in the X-axis direction is set to be narrower as the distance goes to the non-contact space 8. In other words, the removal target portion 9 is tapered in YZ cross section (trapezoidal shape in cross section). The angles (inclination angles) formed by the boundary surfaces 9a and 9b and the thickness direction (Z-axis direction) of the bonded mother substrate 1 may be about 3 ° to 30 °. For example, when the thickness of the second brittle material substrate 3 is about 0.5mm to 0.7mm, the difference (also referred to as the cut amount) between the end positions of the boundary surfaces 9a and 9b on the upper and lower surfaces of the second brittle material substrate 3 is in the range of 30 μm or more.
The process for removing the removal target portion 9 from the bonded mother substrate 1 is roughly performed by the steps of scribing, breaking, and picking. Hereinafter, these will be described in order.
< scribing treatment >
Fig. 5 is a diagram showing a state of scribing processing performed in the present embodiment. The scoring process is performed using the scoring apparatus 100. Fig. 6 is a view showing the bonded mother substrate 1 after the scribing process.
When the scribing process is performed, the bonded mother substrate 1 is first placed and fixed on the table 101 of the scribing apparatus 100. The mother substrate 1 is bonded and fixed to the table 101 in a posture in which the first brittle material substrate 2 is placed on the surface to be placed in contact with the table 101 and the second brittle material substrate 3 is placed on the upper surface. In fig. 5 and the following figures, the enclosed region 4 is sometimes shown in a simplified manner for the sake of simplicity of illustration.
In the scribing apparatus 100, scribing processing is performed in advance on the bonded mother substrate 1 with respect to the boundary surfaces 9a and 9b of the removal target portion 9 defined along the X axis.
More specifically, the scribing wheel (cutter wheel) 102 is pressure-contacted and rolled along the intersecting lines 9a1, 9b1 between the boundary surfaces 9a, 9b and the surface of the second brittle material substrate 3 (the surface to which the first brittle material substrate 2 is not bonded), thereby forming the scribing line SL on the second brittle material substrate 3.
The scribing wheel 102 is a disc-shaped member having a cutting edge 102e with a triangular cross section formed at the outer peripheral end thereof. The scribing wheel 102 is rotatably held in a holder, not shown, in a vertical posture. Then, by moving the holder in a state where the cutting edge 102e is in contact with the intersecting lines 9a1 and 9b1, the cutting edge 102e is pressed and rolled along the intersecting lines 9al and 9b1, and the scribe line SL is formed.
In the present embodiment, a scribing wheel having a tip 102e with an asymmetrical cross-sectional shape (a scalene triangle shape) is used as the scribing wheel 102. Specifically, the scribing wheel 102 is used in which the inclination angles θ 1 and θ 2 of the two blade surfaces 102a and 102b, which are expressed as angles formed by the ridge line 102r forming the blade edge 102e and the plane including the ridge line 102r, are different (where θ 1 < θ 2).
When the scribing wheel 102 is pressed against and rolled so that the cross-sectional shape of the cutting edge 102e is asymmetrical, the crack CR extends (penetrates) from the scribe line SL toward the inside of the second brittle material substrate 3. However, the crack CR does not extend vertically downward, but extends obliquely to the smaller inclination angle of the edge surface of the scribing wheel 102. In the present embodiment, by utilizing this property, the scribing wheel 102 is pressure-rolled in the X-axis direction in such a posture that the blade face 102a of the inclination angle θ 1 is positioned on the removal target portion 9 side and the blade face 102b of the inclination angle θ 2 is positioned on the opposite side, so that the crack CR extends along the boundary faces 9a, 9b of the removal target portions 9.
More specifically, since the inclination directions of the boundary surface 9a and the boundary surface 9b are opposite to each other, the horizontal posture of the scribing wheel 102 differs by 180 ° between the scribing process with the boundary surface 9a as an object shown by the arrow AR1 and the scribing process with the boundary surface 9b as an object shown by the arrow AR2 in fig. 5.
In addition, a plurality of removal target portions 9 are usually set in one bonding mother substrate 1. Therefore, when scribing all the boundary surfaces 9a and 9b by the single scribing wheel 102, it is preferable from the viewpoint of efficiency and stability of scribing to turn the horizontal posture of the scribing wheel 102 180 ° after the scribing process is completed for all the boundary surfaces (for example, the boundary surface 9a) from which the object portion 9 is removed and to perform the scribing process for all the other boundary surfaces (for example, the boundary surface 9b) from which the object portion 9 is removed. In this case, the scribing process with one boundary surface 9a as an object and the scribing process with one boundary surface 9b as an object may be alternately performed by turning the horizontal posture of the scribing wheel 102 by 180 ° each time.
Alternatively, the following may be used: the scribing apparatus 100 includes at least one pair of scribing wheels 102 having a 180 ° difference in horizontal posture, and scribing with the boundary surface 9a and scribing with the boundary surface 9b are simultaneously performed in parallel by the two scribing wheels 102.
Fig. 6 shows a bonded mother substrate 1 after all scribing processes for the boundary surfaces 9a and 9b are completed.
The inclination angle θ 1 of the scribing wheel 102 is preferably 45 ° to 75 °, the inclination angle θ 2 is preferably 55 ° to 80 °, and the angle difference θ 2 — θ 1 therebetween is preferably 5 ° to 25 °. The angular difference θ 2 — θ 1 is more preferably 10 ° to 20 °. Further, the separation of the final portion to be removed 9 is easier as the angle difference θ 2- θ 1 is larger, but if the angle difference θ 2- θ 1 is larger than 25 °, quality deterioration such as chipping, and stretching of a horizontal crack tends to occur easily at the end portion of the second brittle material substrate 3 which is in contact with the portion to be removed 9 before separation, which is not preferable.
The scribing load is only required to be about 6N to 35N, and the scribing speed is only required to be about 10mm/s to 300 mm/s.
< fracture treatment >
Fig. 7 is a diagram showing a case of the breaking process performed in the present embodiment. The breaking process is performed using the breaking apparatus 200. Fig. 8 is a view showing the bonded mother substrate 1 after the breaking process.
When the breaking process is performed, first, the extension tape ET is attached so as to cover the entire exposed surface (the surface opposite to the surface contacting the sealing region 4) of the first brittle material substrate 2 to which the mother substrate 1 is attached. More specifically, the expansion tape ET is stretched and placed in a holding ring, not shown, and the first brittle material substrate 2 is fixed to the adhesive surface of the expansion tape ET exposed inside the ring by bonding. The expansion tape ET is an aspect of a holding tape that is attached to the bonded mother substrate 1 after the breaking process and is to be reliably held, and is an object to be expanded when expansion pickup described later is performed.
Then, the bonding mother substrate 1 to which the related expansion tape ET is fixedly attached is placed on the table 201 of the breaking device 200 having at least a surface portion made of an elastic body. At this time, the bonded mother substrate 1 is mounted and fixed on the table 201 in a posture in which the second brittle material substrate 3 is a surface to be mounted in contact with the table 201 and the first brittle material substrate 2 is an upper surface, in other words, in a posture in which the attached extended tape ET is the uppermost position.
In the breaking apparatus 200, a breaking process is performed to further extend the crack CR formed from one surface to the inside of the second brittle material substrate 3 along the boundary surfaces 9a and 9b of the removal target portion 9, and penetrate the crack CR to the other surface defining the non-contact space 8.
More specifically, the placement and fixation of the mother substrate 1 and the positioning of the breaking bar 202 are performed such that the cutting edge 202e having a triangular shape in cross-sectional view provided vertically below the breaking bar 202 is positioned vertically above the crack CR at a position along the first direction in which the crack CR extends. Then, as shown by an arrow AR3, the breaking bar 202 is lowered, and at a position vertically above the crack CR, the breaking bar 202 is brought into contact with the bonding mother substrate 1 via the extension tape ET, and is further pushed in by a predetermined distance, and then immediately raised and retreated to the initial position.
By pressing the breaking bar 202, a force for expanding both sides of the crack CR is applied to the bonded mother substrate 1 from the elastic table 201. Thereby, the crack CR further extends along the boundary surfaces 9a and 9b and penetrates the second brittle material substrate 3. In other words, the second brittle material substrate 3 is divided at the portions where the boundary surfaces 9a and 9b have been defined so far as the crack CR extends.
The relative positional relationship between the position where the breaking bar 202 is in contact with the boundary surfaces 9a and 9b in the first direction can be appropriately adjusted according to the material and thickness of the first brittle material substrate 2 and the second brittle material substrate 3 constituting the bonded mother substrate 1, and the extent of the crack CR during the scribing process.
The knife tip angle theta 3 of the breaking bar 202 is about 15-90 degrees. The press-in amount of the breaking bar 202 at the time of breaking may be about 0.02mm to 0.3mm, and the lowering rate may be about 5mm/s to 100 mm/s.
By sequentially performing the breaking process on all the cracks CR, as shown in fig. 8, all the portions to be removed 9 are brought into contact with the second brittle material substrate 3 at the divided surfaces 9s formed at the portions defining the boundary surfaces 9a and 9b so far, and are in a state of being divided from the second brittle material substrate 3.
< pickup processing >
As described above, in the bonded mother substrate 1 after the breaking process, all the portions to be removed 9 are separated from the second brittle material substrate 3 at the separation surfaces 9 s. As shown in fig. 4, the removal target portion 9 is not in contact with the outside of the second brittle material substrate 3 because it is opposed to the non-contact region 2f of the first brittle material substrate 2 through the non-contact space 8 that originally encloses the enclosing region 4.
Therefore, the removal target portion 9 after the fracture treatment can be easily removed from the second brittle material substrate 3 by an external force. In the present embodiment, the removal of the removal target portion 9 in the relevant state from the second brittle material substrate 3 is referred to as a pickup process.
In the embodiment, as a preferable aspect of the pickup process, the pickup process is performed after the expansion tape ET is extended in the radial direction. The associated pick-up process is particularly referred to as extended pick-up. The extension of the extension tape ET is performed for the purpose of reducing the force acting between the divided surface 9s of the portion to be removed 9 and the second brittle material substrate 3 adjacent thereto.
The expansion pickup is performed using the expansion device 300. Fig. 9 to 12 are diagrams showing a case of the extended pickup performed in the present embodiment in stages.
The expansion device 300 includes: a table 301 on which the bonded mother substrate 1 with the expansion tape ET bonded to the upper surface thereof can be horizontally placed and fixed, and which is vertically movably provided; and a fixing member 302 that fixes an outer peripheral end portion of the extension tape ET (more specifically, a not-shown retaining ring that fixes the extension tape ET in a tensioned state) in a state where the mother substrate 1 is bonded and fixed to the table 301. The expanding apparatus 300 can use, for example, an apparatus used in an expanding process for separating a large number of chips obtained by singulating a mother substrate for a semiconductor element by dicing or the like. In addition, as for the extension tape ET attached from the time point of the breaking process, the relevant extension tape for the extension process can also be used.
When the expanding and picking-up is performed, the bonded mother substrate 1 after the breaking process is placed and fixed on the placing table 301 with one side of the second brittle material substrate 3 provided in the removal target portion 9 as the upper surface, while the expanding tape ET is attached. At this time, the outer peripheral end portion of the extension band ET is fixed by the fixing member 302 at once.
Next, as indicated by an arrow AR4 in fig. 10, after the table 301 is raised by a predetermined distance, the pickup jig 303 is moved closer to the upper surface 9f of the removal target portion 9 from the vertically upper side as indicated by an arrow AR 5. The pickup jig 303 is a jig formed by attaching a band-shaped adhesive member AT to a flat lower end surface 303 e. Then, as shown in fig. 11, the adhesive member AT is brought into contact with the upper surface 9f of the removal target portion 9. The contact is performed within a range of a width (a dimension in the Y-axis direction in fig. 10) of the removal target portion 9 within an appropriate range (the entire range or a partial range) in the longitudinal direction of the removal target portion 9 extending in the first direction (a direction perpendicular to the paper surface in fig. 11).
When the pickup jig 303 is raised vertically upward in this state, as shown in fig. 12, the removal target portion 9 is also raised integrally with the pickup jig 303 due to the adhesive force of the adhesive member AT attached to the removal target portion 9. Thereby, the portion to be removed 9 is removed from the second brittle material substrate 3, and the non-contact region 2f of the first brittle material substrate 2 is exposed.
More specifically, from the viewpoint of appropriately removing the removal target portion 9, the adhesive member AT is attached to the lower end surface 303e of the pickup jig 303 with a width slightly smaller than the width of the removal target portion 9. For example, if the width of the removal target portion 9 is 3.2mm, the width of the adhesive member AT may be about 3 mm. The adhesive member AT is in contact with the upper surface 9f within the width of the removal target portion 9.
On the other hand, the dimension in the longitudinal direction of the adhesive member AT orthogonal to the width direction is not particularly limited as long as the removal target portion 9 can be removed satisfactorily and reliably. For example, as shown in fig. 3, if the removal target portions 9 in one bonded mother substrate 1 have different longitudinal dimensions, all the removal target portions 9 may be satisfactorily removed.
In addition, the pickup jig 303 need not be a part of the expanding device 300, but may be a separate body. Therefore, it is not necessary to mechanically perform a series of removal operations shown in fig. 10 to 12, and an operator may hold the pickup jig 303 and perform the removal operation. However, from the viewpoint of reliably removing the portion to be removed 9, it is necessary to attach the adhesive member AT to the portion to be removed 9 by bringing the pickup jig 303 vertically close to the bonded mother substrate 1 placed and fixed horizontally, and vertically raising the pickup jig 303 after the relevant attachment is performed. In these operations, when the pickup jig 303 is tilted, the second brittle material substrate 3 is undesirably chipped or the like at the time of removing the portion to be removed 9.
Fig. 13 is a diagram for explaining the effect of the expansion pickup using the expansion device 300.
As described above, since the portion to be removed 9 is in contact with the second brittle material substrate 3 only at the cut surface 9s, in principle, the portion to be removed 9 can be removed by the pickup jig 303 without extending the extension tape ET by the extension device 300.
However, if the bonded mother substrate 1 after the breaking process is placed only on a flat surface without extending the extension band ET, the bonded mother substrate 1 is in a downwardly convex warped state as shown by a curve La in fig. 13 (a) due to a structural difference in the in-plane direction between the first brittle material substrate 2 which is uniform as a whole and the second brittle material substrate 3 which periodically exists in the removal target portion 9 divided from the periphery, and a stress Fa acts on the removal target portion 9 from the second brittle material substrate 3 which sandwiches it in the second direction. In addition, when the first brittle material substrate 2 and the second brittle material substrate 3 are made of different materials, the following may be the case: due to the difference in linear expansion coefficient between the first brittle material substrate 2 and the second brittle material substrate 3, the bonding mother substrate 1 is warped so as to protrude downward as shown by a curve La in fig. 13 (a), and a stress Fa acts on the removal target portion 9 from the second brittle material substrate 3 sandwiched therebetween in the second direction.
In the related case, in order to remove the removal target portion 9 by the pickup jig 303, it is necessary to overcome the friction caused by the stress Fa.
In contrast, when the expanding tape ET is expanded by using the expanding device 300 as described above, the bonded mother substrate 1 is warped so as to be convex upward as indicated by a curve Lb in fig. 13 (b). Therefore, in this case, the stress Fb applied to the removal target portion 9 in the second direction from the second brittle material substrate 3 with the removal target portion interposed therebetween is smaller than the stress Fa in the case shown in fig. 13 (a). Therefore, in the case of performing the above-described extended pickup, the removal of the removal target portion 9 by the pickup jig 303 can be performed more easily and reliably.
Fig. 14 is a view showing the bonded mother substrate 1 after all the removal target portions 9 are removed. The bonded mother substrate 1 is supplied to a predetermined post-process. In fig. 14, the extended tape ET is shown after being peeled off, but depending on the contents of the subsequent steps, the extended tape ET may be added in an unchanged state.
By obtaining the bonded mother substrate 1 as shown in fig. 14, a predetermined process can be easily performed particularly for the non-contact region 2f of each structure unit of each bonded substrate. For example, if the bonded mother substrate 1 is a mother substrate for liquid crystal substrates, it is not necessary to obtain the liquid crystal substrates individually, and electrical inspection or the like is performed for the terminal portions for the liquid crystal substrates provided in the non-contact regions 2f exposed by removing the removal target portions 9.
As described above, according to the present embodiment, it is possible to appropriately remove the portion that divides the non-contact space between the adjacent unit seal regions from one brittle material substrate to which the mother substrate is bonded, and to expose the non-contact region of the other brittle material substrate, wherein the bonded mother substrate repeatedly includes the unit seal region, which is formed by sealing the seal portion formed of the predetermined seal member to the seal portion formed of the predetermined sealing member, in the seal region between the two brittle material substrates whose main surfaces are arranged to face each other.
In the above-described embodiment, the scribing process is performed so that both the boundary surfaces 9a and 9b of the bonded mother substrate 1 are inclined, but at least one of the boundary surfaces may be inclined, and the other boundary surface may not be inclined. In this case, the other boundary surface is preferably subjected to scribing so as to penetrate the crack CR into the other surface previously defining the non-contact space 8. In the above-described embodiment, the scribing process is performed for both the boundary surfaces 9a and 9b of the bonded mother substrate 1, but only one of the boundary surfaces may be processed by the scribing process, and the other boundary surface may be divided by dicing or other methods.
Further, in the scribing step, a scribing line intersecting the boundary surfaces 9a and 9b of the removal target portion 9 may be further formed on the bonded mother substrate 1.
The pickup jig 303 may be a jig in which an adsorption member is attached instead of the adhesive member AT having a belt shape.
In the above-described embodiment, the bonded mother substrate 1 to be processed may be understood to have the following configuration: the first brittle material substrate 2 and the second brittle material substrate 3 are bonded to each other by the sealing portions 6 of the unit seal regions periodically and discretely provided in one direction in the plane (the Y-axis direction which is the second direction in fig. 1). In this case, the non-contact space 8 is understood to be a linear space periodically and discretely provided in a certain direction in the plane where the mother substrate 1 is bonded.
Therefore, the processing method according to the above embodiment may be a method including: in a bonded (mother) substrate in which two substrates are bonded, one of the bonded mother substrates defining the non-contact space is removed from a band-shaped non-contact space provided between the two substrates, and the other of the bonded substrates defining the non-contact space can be exposed.

Claims (10)

1. A method of processing a bonded substrate in which a first substrate and a second substrate are bonded to each other,
the bonded substrate has a strip-shaped non-contact space between the first substrate and the second substrate, the non-contact space being in non-contact with the first substrate and the second substrate,
the method for processing a bonded substrate includes:
a removal target portion setting step of setting a removal target portion in a portion of the second substrate along the non-contact space, the removal target portion being narrower as a cross section perpendicular to an extending direction of the non-contact space extends toward the non-contact space;
a scribing step of forming a scribe line on a surface of the second substrate to which the first substrate is not bonded along an intersection line with at least one of a pair of boundary surfaces of the removal target portion, and extending a crack from the scribe line along the boundary surface;
a breaking step of abutting a breaking bar against the first substrate side of the bonded substrate subjected to the scribing step and further pressing the breaking bar in the bonded substrate, thereby spreading the crack along the boundary surface and dividing the removal target portion from the second substrate at the boundary surface; and
and a removing step of removing the removal target portion divided by the breaking step to expose a portion of the first substrate that defines the non-contact space.
2. The method for processing a bonded substrate according to claim 1,
in the removal target portion setting step, the removal target portion is set to a tapered shape,
in the scribing step, the scribing line is formed along an intersection line with each of the pair of boundary surfaces, and a crack is propagated from the scribing line along each of the pair of boundary surfaces,
in the breaking step, the crack is caused to extend along each of the pair of boundary surfaces.
3. The method for processing a bonded substrate according to claim 1 or 2,
in the scribing step, the scribing wheel is pressure-bonded and rolled along the intersecting line in a posture in which one of the two blade surfaces, which has a smaller inclination angle with respect to the flat surface, is positioned on the removal target portion side, so that the two blade surfaces of the ridge line constituting the cutting edge have different inclination angles with respect to the flat surface including the ridge line, thereby forming the scribing line.
4. The method for processing a bonded substrate according to claim 3,
the angle formed by each of the pair of boundary surfaces and the thickness direction of the bonding substrate is 3-30 degrees,
when the smaller one of the inclination angles of the two blade surfaces with respect to the plane is defined as an angle theta 1 and the larger one is defined as an angle theta 2,
the angle theta 1 is 45-75 degrees,
the angle theta 2 is 55-80 degrees,
the angle difference theta 2-theta 1 is 5-25 degrees.
5. The method for processing a bonded substrate according to claim 4,
the angle difference theta 2-theta 1 is 10-20 degrees.
6. The method for processing a bonded substrate according to any one of claims 1 to 5,
in the breaking step, a holding tape is attached to a surface of the first substrate to which the second substrate is not attached, and the breaking bar is brought into contact with the holding tape.
7. The method for processing a bonded substrate according to any one of claims 1 to 5,
the method for processing a bonded substrate includes:
a sticking step of sticking an expansion tape to a surface of the first substrate to which the second substrate is not bonded at the latest before the start of the removing step,
in the removing step, the removal target portion is removed from the bonded substrate in a state where the spread tape is extended in a radial direction of the bonded substrate.
8. The method for processing a bonded substrate according to any one of claims 1 to 7,
in the removing step, the removal target portion is attached to the adhesive member of a jig having an adhesive member at an end portion thereof, thereby removing the removal target portion from the bonded substrate.
9. The method for processing a bonded substrate according to claim 8,
the width of the adhesive member is smaller than the width of the removal target portion.
10. The method for processing a bonded substrate according to any one of claims 1 to 9,
the first substrate and the second substrate are composed of different materials.
CN202111110373.0A 2020-09-30 2021-09-22 Method for processing bonded substrate Pending CN114326170A (en)

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