CN114303315A - 半导体装置及半导体装置的工作方法 - Google Patents

半导体装置及半导体装置的工作方法 Download PDF

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Publication number
CN114303315A
CN114303315A CN202080058947.1A CN202080058947A CN114303315A CN 114303315 A CN114303315 A CN 114303315A CN 202080058947 A CN202080058947 A CN 202080058947A CN 114303315 A CN114303315 A CN 114303315A
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China
Prior art keywords
transistor
oxide
insulator
conductor
terminal
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Pending
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CN202080058947.1A
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English (en)
Chinese (zh)
Inventor
高桥圭
青木健
上妻宗广
池田隆之
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of CN114303315A publication Critical patent/CN114303315A/zh
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/01—Shaping pulses
    • H03K5/08—Shaping pulses by limiting; by thresholding; by slicing, i.e. combined limiting and thresholding
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/22—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral
    • H03K5/24—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude
    • H03K5/2472—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude using field effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45183—Long tailed pairs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45183—Long tailed pairs
    • H03F3/45188—Non-folded cascode stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45475—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using IC blocks as the active amplifying circuit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D87/00—Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—ELECTRIC POWER NETWORKS; CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00—Circuit arrangements for charging or discharging batteries or for supplying loads from batteries
    • H02J7/60—Circuit arrangements for charging or discharging batteries or for supplying loads from batteries including safety or protection arrangements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45362—Indexing scheme relating to differential amplifiers the AAC comprising multiple transistors parallel coupled at their gates and drains only, e.g. in a cascode dif amp, only those forming the composite common source transistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45512—Indexing scheme relating to differential amplifiers the FBC comprising one or more capacitors, not being switched capacitors, and being coupled between the LC and the IC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H10D86/215—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI comprising FinFETs

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN202080058947.1A 2019-08-23 2020-08-11 半导体装置及半导体装置的工作方法 Pending CN114303315A (zh)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP2019152676 2019-08-23
JP2019-152676 2019-08-23
JP2019223352 2019-12-11
JP2019-223352 2019-12-11
JP2020-005724 2020-01-17
JP2020005724 2020-01-17
PCT/IB2020/057528 WO2021038349A1 (ja) 2019-08-23 2020-08-11 半導体装置及び半導体装置の動作方法

Publications (1)

Publication Number Publication Date
CN114303315A true CN114303315A (zh) 2022-04-08

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US (1) US11799430B2 (https=)
JP (1) JP7621953B2 (https=)
KR (1) KR20220051188A (https=)
CN (1) CN114303315A (https=)
WO (1) WO2021038349A1 (https=)

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Publication number Priority date Publication date Assignee Title
JP7554673B2 (ja) * 2018-12-20 2024-09-20 株式会社半導体エネルギー研究所 半導体装置
JP7653968B2 (ja) * 2020-02-21 2025-03-31 株式会社半導体エネルギー研究所 半導体装置、蓄電装置、電池制御回路、電子部品、車両、および電子機器
US20230146313A1 (en) * 2020-03-30 2023-05-11 Sanyo Electric Co., Ltd. Battery pack for electric bicycle and electric bicycle equipped with battery pack
US11653441B2 (en) * 2020-11-12 2023-05-16 STMicroelectronics (Alps) SAS Printed circuit board
US20230147329A1 (en) * 2021-11-08 2023-05-11 International Business Machines Corporation Single Process Double Gate and Variable Threshold Voltage MOSFET
WO2025083533A1 (ja) * 2023-10-20 2025-04-24 株式会社半導体エネルギー研究所 半導体装置

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JPS62269512A (ja) * 1986-05-19 1987-11-24 Nippon Telegr & Teleph Corp <Ntt> 電圧比較器
JP3257290B2 (ja) * 1994-10-28 2002-02-18 ソニー株式会社 コンパレータ及び差動増幅器
JP4090231B2 (ja) 2001-11-01 2008-05-28 株式会社ルネサステクノロジ 半導体集積回路装置
US6750704B1 (en) * 2003-01-09 2004-06-15 Motorola, Inc. Offset compensated differential amplifier
JP2006352607A (ja) * 2005-06-17 2006-12-28 Renesas Technology Corp 差動増幅器およびアナログデジタルコンバータ
JP4922204B2 (ja) 2007-02-19 2012-04-25 株式会社東芝 信号検出回路
JP2009071653A (ja) 2007-09-14 2009-04-02 Yamaha Corp コンパレータ
JP2010050590A (ja) * 2008-08-20 2010-03-04 Kanagawa Univ コンパレータ回路
JP2010147992A (ja) * 2008-12-22 2010-07-01 Toshiba Corp 増幅回路及びａ／ｄ変換器
WO2010082239A1 (ja) * 2009-01-13 2010-07-22 パナソニック株式会社 比較器およびa/d変換器
CN102282739B (zh) 2009-01-14 2014-05-07 三美电机株式会社 保护监视电路、电池组、二次电池监视电路以及保护电路
US10250247B2 (en) * 2016-02-10 2019-04-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic component, and electronic device
JP6906978B2 (ja) 2016-02-25 2021-07-21 株式会社半導体エネルギー研究所 半導体装置、半導体ウェハ、および電子機器
US10236875B2 (en) 2016-04-15 2019-03-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for operating the semiconductor device
KR102367787B1 (ko) * 2016-06-30 2022-02-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 동작 방법
WO2020174303A1 (ja) 2019-02-26 2020-09-03 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の動作方法

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WO2021038349A1 (ja) 2021-03-04
KR20220051188A (ko) 2022-04-26
US20220294402A1 (en) 2022-09-15
JP7621953B2 (ja) 2025-01-27
JPWO2021038349A1 (https=) 2021-03-04
US11799430B2 (en) 2023-10-24

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