CN114262881A - Production process for improving MOCVD deposition efficiency - Google Patents

Production process for improving MOCVD deposition efficiency Download PDF

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Publication number
CN114262881A
CN114262881A CN202111595436.6A CN202111595436A CN114262881A CN 114262881 A CN114262881 A CN 114262881A CN 202111595436 A CN202111595436 A CN 202111595436A CN 114262881 A CN114262881 A CN 114262881A
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China
Prior art keywords
baffle
deposition
mocvd
chamber
improving
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CN202111595436.6A
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Chinese (zh)
Inventor
章鹏
冯仁
岳鹏
张爱兵
迮建军
古宏伟
蔡渊
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Suzhou Advanced Materials Research Institute Co ltd
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Suzhou Advanced Materials Research Institute Co ltd
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Priority to CN202111595436.6A priority Critical patent/CN114262881A/en
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Abstract

The invention discloses a production process for improving the deposition efficiency of MOCVD, which comprises the following steps: the method comprises the following steps of taking a first direction as the moving direction of a strip to carry out tape running, and sequentially comprising an unreeling chamber, an MOCVD deposition process chamber and a reeling chamber along the first direction; and a second process: adjusting the tape-moving direction, and moving the tape in a second direction opposite to the first direction; the MOCVD deposition process chamber is internally provided with a first baffle, a spray header, a heating arc-shaped plate and a second baffle, the first baffle and the second baffle are opposite along a first direction and are arranged on two sides of the MOCVD deposition process chamber at intervals, the first baffle and the second baffle are both positioned on a strip, the spray header and the heating arc-shaped plate are positioned between the first baffle and the second baffle, and the spray header is positioned on the heating arc-shaped plate. By adopting a plurality of deposition processes with opposite tape-moving directions, the production efficiency can be improved by at least more than 50 percent.

Description

Production process for improving MOCVD deposition efficiency
Technical Field
The invention relates to the technical field of multiple superconducting materials, in particular to a production process for improving the deposition efficiency of MOCVD.
Background
In the superconducting strip, the REBCO superconducting layer is a current transmission layer and is the key point for determining the performance and the cost of the strip. At present, the method for industrially preparing the YBCO superconducting layer comprises the following steps: pulsed Laser Deposition (PLD), Metal Organic Deposition (MOD), reactive co-evaporation (RCE), and Metal Organic Chemical Vapor Deposition (MOCVD).
The method has problems in that the equipment cost is expensive and it is not suitable for large-area deposition growth. The MOD method is difficult to increase the thickness of the film, and the surface roughness of the film is large, and holes and secondary phases are more. The RCE meets the requirements of low cost and high yield, but has poor control effect on the pinning nanowire under the heavy doping condition in the REBCO film.
As chemical vapor deposition, the method has the advantages of low equipment requirement, suitability for preparing REBCO films in large areas and high film deposition rate. In view of the advantages of MOCVD in mass production and lower equipment requirements, MOCVD is still the most potential method for preparing superconducting tapes.
In order to adapt to the application of the superconducting cable in some fields, a superconducting tape with a sufficiently high critical current needs to be prepared. At the same time, some applications put requirements on continuous single lengths of strip, no less than 500 meters or even kilometers of continuous strip, which is a great challenge for conventional MOCVD production processes. Therefore, a plurality of MOCVD methods for preparing superconducting films are subsequently developed to obtain superconducting tapes with large current and large length.
A complete MOCVD deposition may be performed by a series of operations including wall cleaning, chemical source preparation, vacuum pumping, heating, deposition, temperature reduction, vacuum breaking, etc., wherein the deposition may only take about half of the time in the entire process, and a large portion of the rest of the time may be spent on production preparation and chamber cleaning. Therefore, according to the previous multi-production process, the long strips of the multi-production process are produced, and the production efficiency is extremely low.
Disclosure of Invention
In view of the above-mentioned problems, the present invention provides a production process for improving the deposition efficiency of MOCVD, which can improve the production efficiency by at least 50%.
The technical scheme of the invention is as follows:
the invention aims to provide a production process for improving the deposition efficiency of MOCVD, which comprises the following steps:
the first process comprises the following steps: the method comprises the following steps of taking a first direction as the moving direction of a strip to carry out tape running, and sequentially comprising an unreeling chamber, an MOCVD deposition process chamber and a reeling chamber along the first direction;
and a second process: adjusting the tape-moving direction, and moving the tape in a second direction opposite to the first direction;
the MOCVD deposition process chamber is internally provided with a first baffle, a spray header, a heating arc-shaped plate and a second baffle, the first baffle and the second baffle are opposite along the first direction and are arranged on two sides of the MOCVD deposition process chamber at intervals, the first baffle and the second baffle are both positioned on a strip, and the spray header and the heating arc-shaped plate are positioned between the first baffle and the second baffle and the spray header is positioned on the heating arc-shaped plate.
Preferably, in the first process, a pre-deposition area is arranged below the first baffle, and a deposition area is arranged below the second baffle;
in the second process, a pre-deposition area is arranged below the second baffle, and a deposition area is arranged below the first baffle;
the temperature of the pre-deposition area is higher than that of the out-deposition area.
Preferably, the method further comprises a third process, wherein the third process is a process for repeating the second process step.
Preferably, the production process is performed in a vacuum environment.
Preferably, after the whole production process is finished, the vacuum is broken after the temperature is reduced, and the strip is taken out.
Preferably, the heating arc plate comprises a heater and an arc plate which is fixed above the heater and is positioned in the deposition area, and the strip is clung to the upper surface of the arc plate and passes through the deposition area.
Compared with the prior art, the invention has the advantages that:
the production process for improving the MOCVD deposition efficiency adopts a plurality of deposition processes with opposite traveling directions, and can improve the production efficiency by at least more than 50%.
Drawings
The invention is further described with reference to the following figures and examples:
fig. 1 is a schematic structural diagram of a processing apparatus of a production process for improving MOCVD deposition efficiency according to an embodiment of the present invention.
Wherein: 1. an unwinding chamber; 11. unwinding wheels; 2. an MOCVD deposition chamber; 21. a sprayer; 22. a heater; 23. an arc-shaped plate; 24. a first baffle plate; 25. a second baffle; 3. a winding chamber; 31. a winding wheel; 4. a strip of material.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to the accompanying drawings in conjunction with the following detailed description. It should be understood that the description is intended to be exemplary only, and is not intended to limit the scope of the present invention. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present invention.
Example (b):
referring to fig. 1, a production process for improving MOCVD deposition efficiency according to an embodiment of the present invention includes:
the first process comprises the following steps: the method comprises the following steps of taking a first direction, namely the left-to-right direction shown in figure 1, as the moving direction of a strip 4 to carry out tape running, and sequentially comprising an unreeling chamber 1, an MOCVD deposition process chamber 2 and a reeling chamber 3 along the first direction;
and a second process: adjusting the trend of the belt 4, and taking a second direction opposite to the first direction as the moving direction of the belt 4 for belt running;
wherein be equipped with first baffle 24, shower head 21, heating arc and second baffle 25 in MOCVD deposition process chamber 2, first baffle 24 and second baffle 25 are relative and the interval sets up in the left and right sides of MOCVD deposition process chamber 2 along the first direction, and first baffle 24 and second baffle 25 all are located strip 4 above, and shower head 21 and heating arc are located between first baffle 24 and the second baffle 25 and shower head 21 is located on the heating arc.
Specifically, after the superconducting base band is prepared, the tape reel is arranged in the equipment unwinding chamber 1, the arc-shaped plate is vacuumized and heated to the process temperature, and then the tape 4 moves from left to right according to the set speed. In the first process, the tape moving direction is from left to right, and the first baffle 24 is a pre-deposition area, which has the function of preheating the strip 4 to the process temperature. The strip 4 is then bent under the showerhead 21 to a MOCVD process. Then, the strip 4 passes through the second baffle 25 and is bent and coiled at the coiling chamber 3, and the first process is completed. As shown in fig. 1, an unwinding wheel 11 is arranged in the unwinding chamber 1, and a winding wheel 31 is arranged in the winding chamber 3. In the first process, the temperature of the pre-deposition zone is slightly higher than the temperature of the deposition zone, i.e. the temperature at the first shutter plate 24 is higher than the temperature at the second shutter plate 25 as shown in fig. 1.
In the second process, the direction of the running belt 4 is adjusted to be a second direction opposite to the first direction, i.e. a right-to-left direction as shown in fig. 1. At the moment, the winding chamber in the first process is used as the unwinding chamber of the second process, the winding wheel is used as the unwinding wheel of the second process, the unwinding chamber of the first process is used as the winding chamber of the second process, and the unwinding wheel is used as the winding wheel of the second process. In the first process, the temperature of the preliminary deposition zone is slightly higher than the temperature of the deposition zone, i.e. the temperature at the second baffle 25 is higher than the temperature at the first baffle 24, i.e. the temperature at the second baffle 25 is suitably raised in the second process, which is arranged to bring the strip 4 to the process temperature as quickly as possible. The tape running speed in the first process and the tape running speed in the second process are not limited or described in detail, and may be the same or different.
According to the preferred embodiment of the present invention, a third process may be added, where the third process is a repeat of the second process, that is, the third process has a tape direction opposite to the tape direction of the second process, that is, the tape direction is the first direction.
According to the preferred embodiment of the present invention, after completing the deposition processes, the vacuum is broken after the temperature is reduced, and the strip 4 is taken out.
According to some embodiments of the invention, the curved heating plate comprises a heater 22 and a curved plate 23 fixed to the heater 22, the curved plate 23 being located in the deposition zone directly below the shower 21, the strip 4 passing through the deposition zone abutting on the upper surface of the curved plate 23.
It is to be understood that the above-described embodiments of the present invention are merely illustrative of or explaining the principles of the invention and are not to be construed as limiting the invention. Therefore, any modification, equivalent replacement, improvement and the like made without departing from the spirit and scope of the present invention should be included in the protection scope of the present invention. Further, it is intended that the appended claims cover all such variations and modifications as fall within the scope and boundaries of the appended claims or the equivalents of such scope and boundaries.

Claims (6)

1. A production process for improving the deposition efficiency of MOCVD, comprising:
the first process comprises the following steps: the method comprises the following steps of taking a first direction as the moving direction of a strip to carry out tape running, and sequentially comprising an unreeling chamber, an MOCVD deposition process chamber and a reeling chamber along the first direction;
and a second process: adjusting the tape-moving direction, and moving the tape in a second direction opposite to the first direction;
the MOCVD deposition process chamber is internally provided with a first baffle, a spray header, a heating arc-shaped plate and a second baffle, the first baffle and the second baffle are opposite along the first direction and are arranged on two sides of the MOCVD deposition process chamber at intervals, the first baffle and the second baffle are both positioned on a strip, and the spray header and the heating arc-shaped plate are positioned between the first baffle and the second baffle and the spray header is positioned on the heating arc-shaped plate.
2. The production process for improving the deposition efficiency of MOCVD according to claim 1, wherein in the first process, a pre-deposition area is arranged below the first baffle plate, and a deposition area is arranged below the second baffle plate;
in the second process, a pre-deposition area is arranged below the second baffle, and a deposition area is arranged below the first baffle;
the temperature of the pre-deposition area is higher than that of the out-deposition area.
3. The production process for improving the deposition efficiency of MOCVD according to claim 1, further comprising a third process, wherein the third process is a repetition of the second process step.
4. The production process for improving MOCVD deposition efficiency according to claim 1, wherein the production process is carried out in a vacuum environment.
5. The production process for improving the deposition efficiency of MOCVD according to claim 4, wherein after the whole production process is completed, the vacuum is broken after the temperature is reduced, and the strip is taken out.
6. The process for improving MOCVD deposition efficiency according to any one of claims 1 to 5, wherein the heating arc comprises a heater and an arc fixed above the heater and positioned in the deposition zone, and the strip is tightly attached to the upper surface of the arc and passes through the deposition zone.
CN202111595436.6A 2021-12-24 2021-12-24 Production process for improving MOCVD deposition efficiency Pending CN114262881A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115341197A (en) * 2022-09-15 2022-11-15 东部超导科技(苏州)有限公司 Spray cooling integrated plate and spray system for metal organic chemical vapor deposition

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CN206204415U (en) * 2016-12-06 2017-05-31 济南力冠电子科技有限公司 MOCVD device
CN110205602A (en) * 2019-06-20 2019-09-06 上海超导科技股份有限公司 A kind of film plating process growing second-generation high-temperature superconductor barrier layer composite membrane
CN111218672A (en) * 2020-02-27 2020-06-02 苏州新材料研究所有限公司 MOCVD heater
CN113025995A (en) * 2019-12-09 2021-06-25 苏州新材料研究所有限公司 MOCVD reaction system

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Publication number Priority date Publication date Assignee Title
JP2000101115A (en) * 1998-07-24 2000-04-07 Canon Inc Manufacture of photovoltaic device
US20050005846A1 (en) * 2003-06-23 2005-01-13 Venkat Selvamanickam High throughput continuous pulsed laser deposition process and apparatus
CN1829571A (en) * 2003-06-23 2006-09-06 美国超能公司 Metalorganic chemical vapor deposition(MOCVD) process and apparatus to produce multi-layer high-temperature superconducting(HTS) coated tape
CN1957428A (en) * 2003-12-15 2007-05-02 美国超能公司 High-throughput ex-situ method for rare-earth-barium-copper-oxide film growth
CN101978091A (en) * 2008-02-06 2011-02-16 索罗能源公司 Reel-to-reel reaction of a precursor film to form solar cell absorber
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115341197A (en) * 2022-09-15 2022-11-15 东部超导科技(苏州)有限公司 Spray cooling integrated plate and spray system for metal organic chemical vapor deposition
CN115341197B (en) * 2022-09-15 2023-08-11 东部超导科技(苏州)有限公司 Spray cooling integrated plate and spray system for metal organic chemical vapor deposition

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