CN206204415U - MOCVD device - Google Patents
MOCVD device Download PDFInfo
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- CN206204415U CN206204415U CN201621326947.2U CN201621326947U CN206204415U CN 206204415 U CN206204415 U CN 206204415U CN 201621326947 U CN201621326947 U CN 201621326947U CN 206204415 U CN206204415 U CN 206204415U
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- chamber
- rewinding
- band
- plate
- reaction chamber
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Abstract
The utility model discloses a kind of MOCVD device, discharge plate is set in the left chamber of the MOCVD device and right chamber room one, rewinding disk is set in another, and left chamber and right chamber room are connected by horizontal transition chamber thereof with the reaction chamber, thus band from discharge plate blowing pass through reaction chamber and corresponding transition chamber thereof after by rewinding disk rewinding;Reaction chamber, and left chamber and right chamber room are respectively provided with front side door-plate, and front side door-plate is engaged with the doorframe hermetic seal of corresponding chambers.It is relatively good based on MOCVD device maintainability of the present utility model.
Description
Technical field
The utility model is related to a kind of MOCVD device, and wherein MOCVD is Metal-organic Chemical Vapor
Deposition, i.e. metallo-organic compound chemical gaseous phase deposition, belong to vapor phase epitaxial growth technology.
Background technology
MOCVD device generally includes reaction chamber, heater, gas outlet, attemperating unit, and spray equipment.It is Chinese special
Sharp document CN103451621B discloses a kind of MOCVD reaction chambers and process equipment, and it has a cavity, the branch in cavity
Some pallets for placing substrate are set on frame, and configure interior external heating device.This kind of structure is carried out not to be had during epitaxial growth
There is continuity, it is less efficient.
Chinese patent literature CN204063936U then discloses a kind of high-temperature superconductor band volume gas atmosphere heat treatment furnace body, and its is right
In the workpiece that band is processed is adapted as, its make is luminal structure, and luminal structure advantage is that easily construction is required
Atmosphere, but operation is relatively troublesome, and especially band is passed around, and ensures the assembling and inspection of the servicing unit of band conveying
Repair.
Chinese patent literature CN104419913A also discloses that a kind of laser induced chemical vapor depostion method equipment, and its equipment also belongs to
In luminal structure, can also there is related defect.The class formation further contemplates air-tightness using luminal structure(Need to vacuumize).At certain
In a little applications, it is not necessary to vacuumize, although being also required to comparing air-tightness high, structure luminal structure is extremely complicated, maintainable
It is again poor, therefore, inventor thinks the necessity of luminal structure and need not be very high.
Additionally, two side reaction cavitys in this kind equipment, such as CN104419913A are configured at an angle, it is caused
In spiral band winding roller cornerite it is smaller, to vapour deposition exist negatively affect.
The content of the invention
Therefore, the purpose of this utility model is to provide a kind of maintainability relatively good MOCVD device.
The technical solution adopted in the utility model is:
A kind of MOCVD device, including the reaction chamber of heater and spray equipment is provided with, for the gas phase of band
Epitaxial growth, the right chamber room also including the left chamber on the left of reaction chamber and on the right side of reaction chamber;
Wherein, set discharge plate in left chamber and right chamber room one, it is another in set rewinding disk, and left chamber and right chamber room are logical
Cross horizontal transition chamber thereof to be connected with the reaction chamber, so that band passes through reaction chamber and corresponding mistake from discharge plate blowing
Cross after chamber by rewinding disk rewinding;
Reaction chamber, and left chamber and right chamber room are respectively provided with the doorframe gas of front side door-plate, front side door-plate and corresponding chambers
It is sealingly engaged.
Above-mentioned MOCVD device, alternatively, the axis of the discharge plate and rewinding disk in same horizontal plane, the horizontal plane
It is the horizontal midship section of transition chamber thereof.
Alternatively, blowing guide roller is provided with the blowing side of discharge plate, and rewinding is then provided with the rewinding side of rewinding disk
Guide roller;
The axis of blowing guide roller and the axis of rewinding guide roller are positioned at same level, and the horizontal midship section
It is blowing guide roller and the upper tangent plane altogether of rewinding guide roller.
Alternatively, on band direction, it is additionally provided with for holding band at least at the inside two ends of the reaction chamber
Each support roller.
Alternatively, it is provided between two support rollers and constrains the restraining structure of band in strip width direction.
Alternatively, the restraining structure includes vertical restraining plate and the guide pillar perpendicular to restraining plate, guide pillar is led
The guide pillar support drawn, to be enclosed within guide pillar with the spring to the elastic force on restraining plate offer width.
Alternatively, the heater and spray equipment are respectively positioned in reaction chamber, and heater is located at transition chamber thereof
The downside of horizontal midship section, and spray equipment is then positioned at the upside of the horizontal midship section of transition chamber thereof.
Alternatively, drive the discharging motor of discharge plate to be located at the outside of left chamber, and drive the rewinding motor position of rewinding disk
In the outside of right chamber room.
According to the utility model, for the vapor phase epitaxial growth of band, on the one hand meet and be based on band vapor phase epitaxial growth
Efficiency comparison requirement high, on the other hand, material retractable and reactive moieties are formed into horizontal walking by horizontal transition chamber thereof
Material mode, band self-deformation in processing procedure is small.And the door-plate of chamber is opened in the front side of respective chamber(Operating desk side),
Such that it is able to open door-plate, beneficial to the maintenance for carrying out loading and unloading or equipment.
Brief description of the drawings
Fig. 1 is according to a kind of main structure diagram of MOCVD device of the present utility model(Omission equipment front side door-plate).
Fig. 2 is the overlooking the structure diagram corresponding to Fig. 1(Omit apparatus top plate).
In figure:1. left chamber, 2. discharge plate, 3. blowing guide roller, 4. left transition chamber thereof, 5. support roller, 6. reaction chamber,
7. spray equipment, 8. heater, 9. support roller, 10. band, 11. right transition chamber thereofs, 12. rewinding guide rollers, 13. rewinding disks,
14. right chamber rooms, 15. discharging motors, 16. rewinding motors.
Specific embodiment
It is a kind of front view of MOCVD device with reference to explanation accompanying drawing 1, and eliminates the front panel of equipment, generally,
It is the front side of equipment, i.e., the downside of Fig. 2 comparatively towards the direction of operator.
Under normal condition, MOCVD device all can set heater 8 so that the vapour phase epitaxy required for band 10 reaches is given birth to
Temperature long, and spray equipment 7 is provided, for providing growth source material.
Heater 8 can be arranged on reaction chamber 6, it is also possible to be arranged in reaction chamber 6, if placed at reaction chamber
In room 6, then heater 8 is arranged on the downside of the passage of band 10, and the heating of band 10 is carried out using radiant heat and convection current.
Can also be arranged in reaction chamber 6 for spray equipment 7, or be arranged on outside reaction chamber 6, if placed at
Outside reaction chamber 6, then pipeline is needed to introduce.
Referring to attached Fig. 1 and 2, the MOCVD device shown in figure has three basic chambers, is successively from left to right left chamber
1st, separately there are two transition chamber thereofs of level reaction chamber 6 and right chamber room 14, wherein left transition chamber thereof 4 is used for left chamber 1 with reaction
The connection of chamber 6, right transition chamber thereof 11 is used for the connection of right chamber room 14 and reaction chamber 6.
Connection herein is the connection for building band passage, rather than the connection in the fluid meaning under normal condition.Such as
Shown in Fig. 2, the synergy based on discharging motor 15 and rewinding motor 16, side's blowing, side's rewinding, and make in Fig. 1
The tensioning of band 10 between discharge plate 2 and rewinding disk 13 is evened up, so as to be conducive to crystalline growth.
Discharge plate 2 can directly by tensioning itself is carried out, i.e., by the band of tensioning with the interior rewinding disk 13 for setting in right chamber room 14
Material 10 is tangent with unloading position level, some support rollers can be set by the part downside of tensioning, so as to be kept by the part of tensioning
Level substantially.
And then, as shown in figure 1, band 10 forms coiled strip using charging tray, Tu Zhong left chamber 1 is interior to set discharge plate 2, high-volume disk 2
Axis horizontal, and expect that direction is vertical with walking.
So understood based on foregoing description, referring to Figure of description 1 and 2, band 10 is from the blowing of discharge plate 2, Ran Houyi
It is secondary to pass through left transition chamber thereof 4, reaction chamber 6 and right transition chamber thereof 11, subsequently into behind right chamber room 14 by the rewinding of rewinding disk 13.
Front side door-plate, front side door-plate and corresponding chambers are respectively provided with reaction chamber 6, and left chamber 1 and right chamber room 14
Doorframe hermetic seal engagement, to construct the space required for corresponding atmosphere.
It is further ensured that, in same horizontal plane, the horizontal plane is transition to the axis of the discharge plate 2 and rewinding disk 13
The horizontal midship section of chamber, this structure is found in Figure of description 1.
In certain embodiments, the position of material strip 10 can be top in above-mentioned horizontal midship section.
In certain embodiments, in the blowing side of discharge plate 2, such as the right side of the discharge plate 2 shown in Fig. 1, in this position
Storing material guide roller 3 is installed, is used to realize the tensioning at one end of band 10.And in the rewinding side of rewinding disk 13, i.e., shown in Fig. 1
Rewinding disk 13 left side, then be provided with rewinding guide roller 12, be used to realize band 10 in other end tensioning.
Wherein, the axis of the axis of blowing guide roller 3 and rewinding guide roller 12 is located at same level, then tensioning
Band 10 be partially in approximate horizontal state, and the horizontal midship section is blowing guide roller 3 and rewinding guide roller
12 upper tangent plane altogether, so as to form the horizontality of relative ideal.
In on the direction of band 10, i.e., the left and right directions shown in figure is additionally provided with use at the inside two ends of the reaction chamber 6
In at least each support roller 5,9 of holding band 10 so that can preferably be kept by the level of the part of tensioning.It is relative and
Speech, more preferable by the level of the strip material portion of tensioning, then for example crystal growth is more preferable.
Further, it is provided between the quality of such as crystal growth, two support rollers in the constraint of the width of band 10 to improve
The restraining structure of band 10, enables band 10 smoothly to move ahead very much.
In some embodiments, the restraining structure is including vertical restraining plate and the guide pillar perpendicular to restraining plate, to leading
The guide pillar support that post is guided, to be enclosed within guide pillar with the spring to the elastic force on restraining plate offer width, the spring
The spring relatively small using spring, i.e. stiffness factor is flicked, makes restraining plate touch at the edge of band 10.
In certain embodiments, additionally, guide pillar can be provided with thread segment, after guide pillar passes through corresponding guide hole, by spiral shell
Mother adjusts the length that it leans out.
In a preferred embodiment, drive the discharging motor 15 of discharge plate 2 to be located at the outside of left chamber 1, and drive rewinding
The rewinding motor 16 of disk 13 is located at the outside of right chamber room 14, it is ensured that the temperature of motor will not be too high.
Claims (8)
1. a kind of MOCVD device, including it is provided with heater(8)And spray equipment(7)Reaction chamber(6), for band
Material(10)Vapor phase epitaxial growth, it is characterised in that also including positioned at reaction chamber(6)The left chamber in left side(1)With positioned at anti-
Answer chamber(6)The right chamber room on right side(14);
Wherein, left chamber(1)With right chamber room(14)Discharge plate is set in one(2), it is another in set rewinding disk(13), and left chamber
(1)With right chamber room(14)By the transition chamber thereof and the reaction chamber of level(6)Connection, so that band(10)From discharge plate
(2)Blowing passes through reaction chamber(6)And by rewinding disk after corresponding transition chamber thereof(13)Rewinding;
Reaction chamber(6), and left chamber(1)With right chamber room(14)It is respectively provided with front side door-plate, front side door-plate and corresponding chambers
Doorframe hermetic seal is engaged.
2. MOCVD device according to claim 1, it is characterised in that the discharge plate(2)With rewinding disk(13)Axis
In same horizontal plane, the horizontal plane is the horizontal midship section of transition chamber thereof.
3. MOCVD device according to claim 2, it is characterised in that in discharge plate(2)Blowing side be provided with blowing guiding
Roller(3), and in rewinding disk(13)Rewinding side be then provided with rewinding guide roller(12);
Blowing guide roller(3)Axis and rewinding guide roller(12)Axis be located at same level, and in the level
Section is blowing guide roller(3)With rewinding guide roller(12)It is upper altogether tangent plane.
4. MOCVD device according to claim 3, it is characterised in that on band direction, in the reaction chamber(6)
Inside two ends be additionally provided with for holding band(10)At least each support roller(5、9).
5. MOCVD device according to claim 4, it is characterised in that be provided with band between two support rollers(10)Width
Constraint band(10)Restraining structure.
6. MOCVD device according to claim 5, it is characterised in that the restraining structure include vertical restraining plate and
Guide pillar perpendicular to restraining plate, the guide pillar support guided to guide pillar, width side is provided to be enclosed within guide pillar with to restraining plate
The spring of upward elastic force.
7. according to any described MOCVD devices of claim 1-6, it is characterised in that the heater(8)And spray equipment
(7)It is respectively positioned on reaction chamber(6)It is interior, and heater(8)Positioned at the downside of the horizontal midship section of transition chamber thereof, and spray equipment
(7)Then positioned at the upside of the horizontal midship section of transition chamber thereof.
8. according to any described MOCVD devices of claim 1-6, it is characterised in that drive discharge plate(2)Discharging motor
(15)Positioned at left chamber(1)Outside, and drive rewinding disk(13)Rewinding motor(16)Positioned at right chamber room(14)Outside.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201621326947.2U CN206204415U (en) | 2016-12-06 | 2016-12-06 | MOCVD device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201621326947.2U CN206204415U (en) | 2016-12-06 | 2016-12-06 | MOCVD device |
Publications (1)
Publication Number | Publication Date |
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CN206204415U true CN206204415U (en) | 2017-05-31 |
Family
ID=58751472
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201621326947.2U Active CN206204415U (en) | 2016-12-06 | 2016-12-06 | MOCVD device |
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CN (1) | CN206204415U (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114262881A (en) * | 2021-12-24 | 2022-04-01 | 苏州新材料研究所有限公司 | Production process for improving MOCVD deposition efficiency |
-
2016
- 2016-12-06 CN CN201621326947.2U patent/CN206204415U/en active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114262881A (en) * | 2021-12-24 | 2022-04-01 | 苏州新材料研究所有限公司 | Production process for improving MOCVD deposition efficiency |
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Address after: 250119 area a, building 13, Sino German Industrial Park, 8 Zidong Avenue, Tianqiao District, Jinan City, Shandong Province Patentee after: Shandong Liguan microelectronics equipment Co., Ltd Address before: 250119 Shandong Province Flyover District of Ji'nan City Shun Hing Sangzi Town Road No. 66 Ji'nan new materials industry science and Technology Park Building 1, 1 floor West Patentee before: JINAN LIGUAN ELECTRONIC TECHNOLOGY Co.,Ltd. |