CN114253087B - 确定样本压射区域的集合的方法和信息处理装置 - Google Patents

确定样本压射区域的集合的方法和信息处理装置

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Publication number
CN114253087B
CN114253087B CN202111098337.7A CN202111098337A CN114253087B CN 114253087 B CN114253087 B CN 114253087B CN 202111098337 A CN202111098337 A CN 202111098337A CN 114253087 B CN114253087 B CN 114253087B
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CN
China
Prior art keywords
sample injection
substrate
injection regions
value
regions
Prior art date
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Active
Application number
CN202111098337.7A
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English (en)
Chinese (zh)
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CN114253087A (zh
Inventor
江头信一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
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Canon Inc
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Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of CN114253087A publication Critical patent/CN114253087A/zh
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/706833—Sampling plan selection or optimisation, e.g. select or optimise the number, order or locations of measurements taken per die, workpiece, lot or batch
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706835—Metrology information management or control
    • G03F7/706839—Modelling, e.g. modelling scattering or solving inverse problems
    • G03F7/706841—Machine learning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7046—Strategy, e.g. mark, sensor or wavelength selection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7049—Technique, e.g. interferometric
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/50—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Artificial Intelligence (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Evolutionary Computation (AREA)
  • Medical Informatics (AREA)
  • Software Systems (AREA)
  • Health & Medical Sciences (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Length Measuring Devices By Optical Means (AREA)
CN202111098337.7A 2020-09-25 2021-09-18 确定样本压射区域的集合的方法和信息处理装置 Active CN114253087B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020161328A JP7545278B2 (ja) 2020-09-25 2020-09-25 サンプルショット領域のセットを決定する方法、計測値を得る方法、情報処理装置、リソグラフィ装置、プログラム、および物品製造方法
JP2020-161328 2020-09-25

Publications (2)

Publication Number Publication Date
CN114253087A CN114253087A (zh) 2022-03-29
CN114253087B true CN114253087B (zh) 2026-04-07

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Country Status (5)

Country Link
US (1) US12025924B2 (https=)
JP (1) JP7545278B2 (https=)
KR (1) KR102904615B1 (https=)
CN (1) CN114253087B (https=)
TW (1) TWI849333B (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7745407B2 (ja) * 2021-10-01 2025-09-29 キヤノン株式会社 基板上の複数のショット領域の配列を求める方法、露光方法、露光装置、物品の製造方法、プログラム及び情報処理装置
KR20250175175A (ko) 2024-06-07 2025-12-16 삼성전자주식회사 반도체 제조 공정의 계측 지점 업샘플링 방법, 그 시스템, 및 업샘플링 모델의 학습 방법
CN120446901B (zh) * 2025-07-09 2025-09-16 中南大学 一种物理约束下边坡内部的分层形变估计方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06232028A (ja) * 1993-02-08 1994-08-19 Nikon Corp 位置合わせ方法
JP2010040553A (ja) * 2008-07-31 2010-02-18 Tokyo Institute Of Technology 位置検出方法、プログラム、位置検出装置及び露光装置

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06349707A (ja) * 1993-06-14 1994-12-22 Nikon Corp 位置合わせ方法
US5808910A (en) * 1993-04-06 1998-09-15 Nikon Corporation Alignment method
DE60108082T2 (de) 2001-05-14 2005-10-13 Infineon Technologies Ag Verfahren zu Durchführung einer Ausrichtungsmessung von zwei Mustern in unterschiedlichen Schichten eines Halbleiterwafers
JP2003324055A (ja) * 2002-04-30 2003-11-14 Canon Inc 管理システム及び装置及び方法並びに露光装置及びその制御方法
US7817242B2 (en) * 2003-11-28 2010-10-19 Nikon Corporation Exposure method and device manufacturing method, exposure apparatus, and program
JP4715749B2 (ja) 2004-08-19 2011-07-06 株式会社ニコン アライメント情報表示方法とそのプログラム、アライメント方法、露光方法、デバイス製造方法、表示システム、表示装置
JP2006108533A (ja) 2004-10-08 2006-04-20 Nikon Corp 位置検出方法及び露光方法
JP5045927B2 (ja) * 2005-07-08 2012-10-10 株式会社ニコン 露光方法及び露光装置、並びにデバイス製造方法
KR100817092B1 (ko) 2007-03-14 2008-03-26 삼성전자주식회사 중첩계측오차를 보정하기 위한 계측시스템 및 이를 이용한계측방법
US9052604B2 (en) * 2008-11-06 2015-06-09 Micron Technology, Inc. Photolithography systems and associated alignment correction methods
TWI417942B (zh) * 2009-12-17 2013-12-01 Ind Tech Res Inst 二維陣列疊對圖樣組之設計方法、疊對誤差量測方法及其量測系統
US8148682B2 (en) 2009-12-29 2012-04-03 Hitachi, Ltd. Method and apparatus for pattern position and overlay measurement
JP2011222610A (ja) * 2010-04-06 2011-11-04 Nikon Corp 位置合わせ方法、露光方法及びデバイスの製造方法、並びに露光装置
NL2013417A (en) * 2013-10-02 2015-04-07 Asml Netherlands Bv Methods & apparatus for obtaining diagnostic information relating to an industrial process.
US9087176B1 (en) 2014-03-06 2015-07-21 Kla-Tencor Corporation Statistical overlay error prediction for feed forward and feedback correction of overlay errors, root cause analysis and process control
US10707107B2 (en) * 2015-12-16 2020-07-07 Kla-Tencor Corporation Adaptive alignment methods and systems
EP3258479B1 (en) * 2016-06-13 2019-05-15 IMS Nanofabrication GmbH Method for compensating pattern placement errors caused by variation of pattern exposure density in a multi-beam writer
JP2018060108A (ja) 2016-10-07 2018-04-12 キヤノン株式会社 位置合わせ方法、露光方法
EP3352013A1 (en) 2017-01-23 2018-07-25 ASML Netherlands B.V. Generating predicted data for control or monitoring of a production process
JP6688273B2 (ja) * 2017-11-13 2020-04-28 キヤノン株式会社 リソグラフィ装置、リソグラフィ方法、決定方法及び物品の製造方法
KR102825221B1 (ko) 2018-01-24 2025-06-24 에이에스엠엘 네델란즈 비.브이. 컴퓨테이션 계측법 기반 샘플링 스킴
JP7580297B2 (ja) * 2021-02-22 2024-11-11 キヤノン株式会社 基板上の複数のショット領域の配列を求める方法、露光装置、物品の製造方法、プログラム及び情報処理装置
JP7745407B2 (ja) * 2021-10-01 2025-09-29 キヤノン株式会社 基板上の複数のショット領域の配列を求める方法、露光方法、露光装置、物品の製造方法、プログラム及び情報処理装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06232028A (ja) * 1993-02-08 1994-08-19 Nikon Corp 位置合わせ方法
JP2010040553A (ja) * 2008-07-31 2010-02-18 Tokyo Institute Of Technology 位置検出方法、プログラム、位置検出装置及び露光装置

Also Published As

Publication number Publication date
US12025924B2 (en) 2024-07-02
US20220100108A1 (en) 2022-03-31
JP2022054250A (ja) 2022-04-06
CN114253087A (zh) 2022-03-29
TWI849333B (zh) 2024-07-21
JP7545278B2 (ja) 2024-09-04
KR102904615B1 (ko) 2025-12-29
TW202212993A (zh) 2022-04-01
KR20220041731A (ko) 2022-04-01

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