CN114249325A - 一种制备硅纳米腔的方法 - Google Patents
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- 239000008367 deionised water Substances 0.000 claims description 6
- 229910021641 deionized water Inorganic materials 0.000 claims description 6
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- 239000002390 adhesive tape Substances 0.000 claims description 3
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- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
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- 239000010931 gold Substances 0.000 abstract description 9
- 230000000694 effects Effects 0.000 abstract description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052737 gold Inorganic materials 0.000 abstract description 8
- 238000002360 preparation method Methods 0.000 abstract description 6
- 229910000510 noble metal Inorganic materials 0.000 abstract description 3
- 229910052709 silver Inorganic materials 0.000 abstract description 3
- 239000004332 silver Substances 0.000 abstract description 3
- 238000001069 Raman spectroscopy Methods 0.000 abstract description 2
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Abstract
本发明公开了一种制备硅纳米腔的方法,本发明采用自组装方法制备的高度有序的聚苯乙烯小球阵列,放入等离子体清洗机中刻蚀,利用磁控溅射在聚苯乙烯小球阵列表面溅射50~200nm的金属,取下聚苯乙烯小球阵列,将纳米孔阵列放入盛有NaOH溶液的烧杯中刻蚀;本发明与块状结构相比,硅纳米结构在性能上有其优越性,研究显示,硅在紫外光范围内同样具有局域表面等离子激元效应,能达到类似贵金属(金、银)纳米结构的增强效果,在光电器件的制备,表面增强拉曼检测等方面效果显著。本发明制备得到了一种图案化硅纳米结构。该制备方法的创新性在于可以对硅纳米结构的尺寸、间隙等方面进行很方便的控制。进而研究其光电效应。
Description
技术领域
本发明涉及纳米材料制备技术领域,尤其是涉及一种简易制备硅纳米结构的方法。
背景技术
与块状结构相比,硅纳米结构的性能有所提高。然而,约束和加载条件不足以加工和制造高性能的设备。研究发现,贵金属,如金、银等是可见光和近红外光谱中使用最广泛的等离子体材料。同时也有研究表明,铝是一种广泛研究的材料,支持紫外线中的等离子体激元,其中铝纳米结构的光学模式可以通过改变几何参数或通过氧化的材料成分来控制。相比之下,硅是半导体工业中使用最广泛的材料。有趣的是,它也属于在紫外光谱范围内表现出强烈带间跃迁的p-块元素组,同样也支持紫外线中的表面等离子激元。硅纳米结构在紫外范围内具有潜在的应用,例如用于光谱过滤的纳米结构器件、等离子体增强硅光电探测器、分子手性询问和催化
发明内容
本发明针对现有技术的不足,提出了一种简易制备硅纳米结构的方法,工艺步骤简单,可操作性强。
为了实现上述目的,本发明采用以下技术方案:一种简易制备硅纳米结构的方法,包括以下步骤:
1)采用自组装方法制备的高度有序的聚苯乙烯小球阵列。
1a)清洗硅片;
1b)制备六方密排的聚苯乙烯小球阵列;
将直径500nm聚苯乙烯小球和无水乙醇的按照体积比为1:1混合,再通过超声处理使聚苯乙烯小球均匀分散,用移液枪将聚苯乙烯小球分散液滴在硅片上,使分散液均匀分布在硅片上,将硅片倾斜的滑入液面平稳的器皿中,在水面上形成密排的聚苯乙烯小球阵列,最后用清洗后的硅片将浮在水面上的小球阵列缓慢的捞起来,吸水干燥后备用。
2)将高度有序的聚苯乙烯小球阵列放入等离子体清洗机中刻蚀,蚀刻气体为体积比为O2:Ar=4:1的混合气体,经过刻蚀聚苯乙烯小球的直径由500nm减小到350nm。
3)利用磁控溅射在其表面溅射50~200nm的金属、合金、半导体或金属氧化物;
4)将溅射完成的聚苯乙烯小球阵列取下来,在原衬底上得到六角密排结构的纳米孔结构。
5)将纳米孔阵列放入盛有NaOH溶液的烧杯中,加热至50~100℃,刻蚀时间为0.5~5min,得到硅纳米结构。
作为优选,清洗硅片,具体为:将硅片并放入烧杯中,在烧杯中分别加入体积比为1:2:6的氨水、过氧化氢和去离子水的混合溶液中。将烧杯放在烤焦台上加热至沸腾,并保持5~10min,冷却后将液体倒出,依次用去离子水,无水乙醇反复超声15min。
作为优选,步骤3)溅射的材料为Au,在溅射功率为25W,真空度为2×10-4Pa的高真空条件下,通入氩气流量为20sccm,垂直于经过刻蚀聚苯乙烯小球阵列进行溅射,溅射时间3min,溅射厚度为100nm。
作为优选,步骤4)将溅射完成的聚苯乙烯小球阵列取下来的方法为利用胶带粘贴下来。
本发明的有益效果:与块状结构相比,硅纳米结构在性能上有其优越性,研究显示,硅在紫外光范围内同样具有局域表面等离子激元效应,能达到类似贵金属(金、银)纳米结构的增强效果,在光电器件的制备,表面增强拉曼检测等方面效果显著。
本发明设计并制备得到了一种图案化硅纳米结构。该制备方法的创新性在于可以对硅纳米结构的尺寸、间隙等方面进行很方便的控制。进而研究其光电效应。
附图说明
图1结构制备流程图;
图2金纳米孔阵列;
图3金纳米孔阵列在NaOH溶液中刻蚀温度60℃,刻蚀时间为2.5min;
图4金纳米孔阵列在NaOH溶液中刻蚀温度80℃,刻蚀时间为2.5min;
图5金纳米孔阵列在NaOH溶液中刻蚀温度80℃,刻蚀时间为1.5min。
具体实施方式
下面结合附图和具体实施方式对本发明做进一步的描述。
实施例1
如图1所示:
1)采用自组装方法制备的高度有序的聚苯乙烯小球阵列。
1a)清洗硅片。将硅片并放入烧杯中,在烧杯中分别加入体积比为1:2:6的氨水、过氧化氢和去离子水的混合溶液中。将烧杯放在烤焦台上加热至沸腾,并保持5min,冷却后将液体倒出,依次用去离子水,无水乙醇反复超声15min。
1b)制备六方密排的聚苯乙烯小球阵列。将直径500nm聚苯乙烯小球和无水乙醇的按照体积比为1:1混合,再通过超声处理使聚苯乙烯小球均匀分散,用移液枪将聚苯乙烯小球分散液滴在大块的硅片,使分散液均匀分布在硅片上,将大硅片缓慢倾斜的滑入液面平稳的器皿中,在水面上形成密排的聚苯乙烯小球阵列,最后用清洗后的硅片将浮在水面上的小球阵列缓慢的捞起来,吸水干燥后备用。
2)将高度有序的聚苯乙烯小球阵列放入等离子体清洗机中刻蚀,蚀刻气体为体积比为O2:Ar=4:1的混合气体,经过刻蚀聚苯乙烯小球的直径由500nm减小到300nm。
3)利用磁控溅射在其表面溅射100nm的金,在溅射功率为25W,真空度为2×10-4Pa的高真空条件下,通入氩气流量为20sccm,垂直于经过刻蚀聚苯乙烯小球阵列进行溅射,溅射时间3min,溅射厚度为100nm。
4)利用胶带将溅射完成的聚苯乙烯小球阵列粘贴下来,在原衬底上得到六角密排结构的纳米孔结构。
5)将纳米孔阵列放入盛有NaOH溶液的烧杯中,加热至60℃,刻蚀时间为2.5min,得到硅纳米结构。
本实施例中生成的银纳米粒子如图2、图3所示。
实施例2
实施例2与实施例1不同之处在于:
步骤(5)中,加热温度为80℃,其余与实施例1完全相同。
本实施例中生成的银纳米粒子如图4所示。
实施例3
实施例3与实施例1不同之处在于:
步骤(5)中,加热温度为80℃,刻蚀时间为1.5min其余与实施例1完全相同。
本实施例中生成的银纳米粒子如图5所示。
Claims (4)
1.一种制备硅纳米腔的方法,其特征在于,该方法具体包括以下步骤:
1)采用自组装方法制备的高度有序的聚苯乙烯小球阵列;
1a)清洗硅片;
1b)制备六方密排的聚苯乙烯小球阵列;
将直径500nm聚苯乙烯小球和无水乙醇的按照体积比为1:1混合,再通过超声处理使聚苯乙烯小球均匀分散,用移液枪将聚苯乙烯小球分散液滴在硅片上,使分散液均匀分布在硅片上,将硅片倾斜的滑入液面平稳的器皿中,在水面上形成密排的聚苯乙烯小球阵列,最后用清洗后的硅片将浮在水面上的小球阵列缓慢的捞起来,吸水干燥后备用;
2)将高度有序的聚苯乙烯小球阵列放入等离子体清洗机中刻蚀,蚀刻气体为体积比为O2:Ar=4:1的混合气体,经过刻蚀聚苯乙烯小球的直径由500nm减小到350nm;
3)利用磁控溅射在其表面溅射50~200nm的金属、合金、半导体或金属氧化物;
4)将溅射完成的聚苯乙烯小球阵列取下来,在原衬底上得到六角密排结构的纳米孔结构;
5)将纳米孔阵列放入盛有NaOH溶液的烧杯中,加热至50~100℃,刻蚀时间为0.5~5min,得到硅纳米结构。
2.根据权利要求1所述的一种制备硅纳米腔的方法,其特征在于:清洗硅片,具体为:将硅片并放入烧杯中,在烧杯中分别加入体积比为1:2:6的氨水、过氧化氢和去离子水的混合溶液中;将烧杯放在烤焦台上加热至沸腾,并保持5~10min,冷却后将液体倒出,依次用去离子水,无水乙醇反复超声15min。
3.根据权利要求1所述的一种制备硅纳米腔的方法,其特征在于:步骤3)溅射的材料为Au,在溅射功率为25W,真空度为2×10-4Pa的高真空条件下,通入氩气流量为20sccm,垂直于经过刻蚀聚苯乙烯小球阵列进行溅射,溅射时间3min,溅射厚度为100nm。
4.根据权利要求1所述的一种制备硅纳米腔的方法,其特征在于:步骤4)将溅射完成的聚苯乙烯小球阵列取下来的方法为利用胶带粘贴下来。
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