CN114235192A - 一种柔性薄膜温度传感器、制备方法及物性检测方法 - Google Patents
一种柔性薄膜温度传感器、制备方法及物性检测方法 Download PDFInfo
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- 238000001514 detection method Methods 0.000 title claims abstract description 18
- 230000000704 physical effect Effects 0.000 title claims abstract description 15
- 238000002360 preparation method Methods 0.000 title abstract description 11
- 239000010410 layer Substances 0.000 claims abstract description 102
- 239000010408 film Substances 0.000 claims abstract description 51
- 230000007704 transition Effects 0.000 claims abstract description 22
- 239000000463 material Substances 0.000 claims abstract description 19
- 239000002346 layers by function Substances 0.000 claims abstract description 18
- 239000010409 thin film Substances 0.000 claims abstract description 18
- 239000011241 protective layer Substances 0.000 claims abstract description 17
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 10
- 238000000227 grinding Methods 0.000 claims description 25
- 238000000137 annealing Methods 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 10
- 238000004544 sputter deposition Methods 0.000 claims description 10
- 239000007789 gas Substances 0.000 claims description 7
- 229910052786 argon Inorganic materials 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 6
- 238000005498 polishing Methods 0.000 claims description 6
- 238000005520 cutting process Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 239000003795 chemical substances by application Substances 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 3
- 229910052593 corundum Inorganic materials 0.000 claims description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 238000001228 spectrum Methods 0.000 claims description 3
- 239000013077 target material Substances 0.000 claims description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 238000007517 polishing process Methods 0.000 claims 1
- 239000007921 spray Substances 0.000 claims 1
- 238000005336 cracking Methods 0.000 abstract description 8
- 230000035945 sensitivity Effects 0.000 abstract description 4
- 238000009792 diffusion process Methods 0.000 abstract description 3
- 230000002950 deficient Effects 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 description 15
- 238000001723 curing Methods 0.000 description 6
- 238000012360 testing method Methods 0.000 description 5
- 244000137852 Petrea volubilis Species 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 4
- 238000005507 spraying Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 210000000438 stratum basale Anatomy 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
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Abstract
一种柔性薄膜温度传感器,由底部往上依次包括柔性基底层、绝缘层、功能层以及保护层,所述绝缘层与功能层间设置有过渡层,所述过渡层为Ta2O5层,所述Ta2O5层采用射频反应磁控溅射的方法沉积于绝缘层上。本发明还涉及该柔性薄膜传感器的制备方法和物性检测方法,本发明得到的柔性薄膜温度传感器能有效缓解薄膜伸缩开裂问题,且结构致密均匀,从而使得热接点的体积更小,热容量减小,提高灵敏度。制备过程中采用独特的物性检测方法,快速、便捷、准确地表征各层薄膜材料厚度、形貌及原子高温扩散浓度,进一步提高产品的次品检出率。
Description
技术领域
本发明涉及温度传感器技术领域,具体涉及一种柔性薄膜温度传感器、制备方法及物性检测方法。
背景技术
柔性薄膜温度传感器广泛应用于医疗健康监测、运动、通信、航空航天、消防等领域,其根据将温度传感器与不同的柔性基底材料结合,制作成传感装置,能够非常方便的对复杂被测量物进行测量,具有附着力强、耐弯折、而且结构形式灵活多样的特点。
在不同基底上制备薄膜传感器需要构建不同的材料体系,在基底材料与薄膜热电偶材料之间需要沉积绝缘层以准确收集输出电信号,然而现有技术中存在的问题为高温下绝缘层薄膜容易伸缩开裂、严重的甚至产生脱落现象,严重影响薄膜传感器的使用寿命。
此外还存在的问题是,现有的柔性薄膜温度传感器的灵敏度有提升的空间。同时现有的柔性薄膜温度传感器是由多层膜组成的,各层薄膜的成分与形貌表征至关重要,对研究各层薄膜性能起着重要作用。众所周知,以金属为基底的多层薄膜大多采用切断横截面来表征各层材料物性参数,但这并不适用于柔性基底的多层薄膜表征,柔性基底一般比较薄,且易弯曲变形,切割截面后,无法直接研磨并测试,如何在柔性基底表征各层薄膜材料厚度、形貌及原子高温扩散浓度是难题。
因此本发明旨在开发一种柔性薄膜温度传感器及制备方法,以更好地满足实际需要。
发明内容
本发明所解决的技术问题在于提供一种柔性薄膜温度传感器及制备方法,以解决传统柔性薄膜温度传感器灵敏度低、多层膜易开裂脱落且断面不易表征的问题。
本发明所解决的技术问题采用以下技术方案来实现:
一种柔性薄膜温度传感器,由底部往上依次包括柔性基底层、绝缘层、功能层以及保护层,所述绝缘层与功能层间设置有过渡层,所述过渡层为Ta2O5层,所述Ta2O5层采用射频反应磁控溅射的方法沉积于绝缘层上。
进一步地,所述过渡层的厚度为1~10um。
进一步地,所述保护层为Al2O3层,保护层的厚度为3~10um。
进一步地,所述功能层为ITO/In2O3层,功能层的厚度为1~3um。
进一步地,所述绝缘层为单晶硅层,绝缘层的厚度为10~20um。
一种柔性薄膜温度传感器的制备方法,包括如下步骤:
1)准备柔性基底材料备用;
2)将所述绝缘层所需的材料作为靶材,通入纯度99.99%氧气及纯度为99.99%氩气的混合气体作为工作气体,采用磁控溅射的方式将绝缘层沉积于所述柔性基底材料上,磁控溅射功率为300~500w
3)绝缘层沉积完成后,向真空室通入纯度大于99.99%的氩气,调节两磁场电源电流和加于靶上的溅射电压,在绝缘层上依次沉积过渡层、功能层和保护层;
4)进行退火处理;
5)退火结束,在真空室内冷却后取出即可。
进一步地,步骤4)中,退火温度范围为800~1300℃,退火时间维持1~50h。
优选的,步骤4)中,退火温度范围为800℃,退火时间维持1h。
进一步地,步骤3)中,磁场电源电流为15~18mA,加于靶上的溅射电压为400~500V。
一种柔性薄膜温度传感器的物性检测方法,针对所述的柔性薄膜温度传感器进行物性检测,包括如下步骤:
S1、将所述柔性薄膜温度传感器切割后形成断面,将所述断面用固化剂进行固化处理;
S2、将固化处理后的所述断面表面进行研磨抛光处理,直至所述断面上的结构层露出完整;
S3、将所述断面进行喷金处理和加热处理;
S4、利用场发射扫描电镜进行观测,对各层薄膜厚度进行拍照和记录;将所述场发射扫描电镜继续放大倍数观测各结构层的形貌并进行拍照和记录;
S5、继续进行加热处理,加热处理结束后对所述断面由柔性基底层往保护层方向进行线性能谱扫描,观测各结构层以及结构层沿深度方向的原子浓度。
首先对柔性薄膜温度传感器进行预处理,采用树脂固化方法将柔性薄膜温度传感器固化,然后对其断面表面研磨抛光处理,使得多次薄膜完整并平整的暴露出来,提高各膜层厚度、形貌以及原子浓度分布的测试准确性。
进一步地,步骤S2中,研磨抛光处理采用分段研磨的方式,第一阶段研磨选用砂纸400~500目,压力15~20N,研磨转速800~900rpm;第二阶段研磨选用砂纸1000~1200目,压力15~20N,研磨转速600~700rpm;第三阶段研磨选用砂纸2000~2200目,压力10~15N,转速600~700rpm。
有益效果:本发明在研发过程中,发现传统柔性薄膜传感器高温下容易伸缩开裂是由于基底材料与绝缘层材料的热膨胀系数相差较大、高温下热膨胀系数不匹配导致的产生了应变现象,因此,本发明通过增加独特过渡层的添加,有效缓解薄膜伸缩开裂问题。
本发明所述的柔性薄膜温度传感器的制备方法成膜速度快、对膜层损伤小、各结构层粘附性好,且结构致密均匀,平整光滑,而且很薄,从而使得热接点的体积更小,热容量减小,提高灵敏度。
制备过程中采用独特的物性检测方法,快速、便捷、准确地表征各层薄膜材料厚度、形貌及原子高温扩散浓度,进一步提高产品的次品检出率,保证产品的质量稳定。
附图说明
图1为本发明所述的柔性薄膜温度传感器的切面示意图。
图2为本发明所述的柔性薄膜温度传感器的电阻测试结果。
图3为本发明所述的溅射有过渡层的柔性薄膜温度传感器的开裂情况。
图4为未溅射过渡层的柔性薄膜温度传感器的开裂情况。
图5为不同退火温度和退火时间对柔性薄膜温度传感器脱落程度的影响。
图6为常规检测方法得到的原子浓度信号检测结果。
图7为本发明所述的检测方法得到的原子浓度信号检测结果。
其中:1、柔性基底层;2、绝缘层;3、过渡层;4、功能层;5、保护层。
具体实施方式
为了使本发明实现的技术手段、创作特征、达成目的与功效易于明白了解,下面结合具体实施例进一步阐述本发明。
所述的柔性薄膜温度传感器,由底部往上依次包括柔性基底层1、绝缘层2、功能层4以及保护层5,所述绝缘层2与功能层4间设置有过渡层3,所述过渡层3为Ta2O5层,过渡层3的厚度为1um,所述Ta2O5层采用射频反应磁控溅射的方法沉积于绝缘层2上。所述保护层5为Al2O3层,保护层5的厚度为3um。所述功能层4为ITO/In2O3层,功能层4的厚度为1um。所述绝缘层2为单晶硅层,绝缘层2的厚度为10um。所述的柔性薄膜温度传感器的切面如图1所示。
所述柔性薄膜温度传感器的制备方法,包括如下步骤:
1)准备柔性基底材料备用;
2)将所述绝缘层所需的材料作为靶材,通入纯度99.99%氧气及纯度为99.99%氩气的混合气体作为工作气体,采用磁控溅射的方式将绝缘层沉积于所述柔性基底材料上,磁控溅射功率为300~500w;
3)绝缘层沉积完成后,将真空室抽真空至4×10-3Pa以下,向真空室通入纯度大于99.99%的氩气,调节两磁场电源电流和加于靶上的溅射电压,磁场电源电流为15~18mA,加于靶上的溅射电压为400~500V,在绝缘层上依次沉积过渡层、功能层和保护层;
4)进行退火处理,退火温度范围为800~1300℃,退火时间维持1~50h;
5)退火结束,在真空室内冷却后取出即得到产品。
所述柔性薄膜温度传感器进行物性检测包括如下步骤:
S1、将所述柔性薄膜温度传感器切割后形成断面,将所述断面用固化剂进行固化处理;
S2、将固化处理后的所述断面表面进行研磨抛光处理,直至所述断面上的结构层露出完整;研磨抛光处理采用分段研磨的方式,第一阶段研磨选用砂纸400目,压力15N,研磨转速800rpm;第二阶段研磨选用砂纸1000目,压力15N,研磨转速600rpm;第三阶段研磨选用砂纸2000目,压力10N,转速600rpm;
S3、将所述断面进行喷金处理和加热处理;喷金处理可增加导电性,放大倍数倍后图片更清晰;
S4、利用场发射扫描电镜进行观测,对各层薄膜厚度进行拍照和记录;将所述场发射扫描电镜继续放大倍数观测各结构层的形貌并进行拍照和记录;
S5、继续进行加热处理,加热处理结束后对所述断面由柔性基底层往保护层方向进行线性能谱扫描,观测各结构层以及结构层沿深度方向的原子浓度。
结果检测:
1、将得到的柔性薄膜温度传感器进行不同温度下的电阻测试,以10℃为温度间隔,升温速率2℃/min,测试-40℃~80℃之间的电阻温度曲线,如图2所示,经拟合其线性度和电阻温度系数分别为0.998、0.22%/℃。
2、开裂程度比较,未溅射过渡层的产品与溅射有过渡层的产品开裂情况如图3和图4所示,结果表明,溅射有过渡层的产品由于减少了应力,各膜层间开裂少,而未溅射过渡层的产品开裂多而明显。
3、验证不同退火温度和退火时间对柔性薄膜温度传感器脱落程度的影响,结果如图5所示。结果证明,在一定范围内,退火处理温度越高、退火处理时间越长,薄膜脱落程度越高。
4、将常规检测方法以及本发明所述的物性检测方法进行对比,结果如图6和图7所示,其中常规检测方法为常用的通过切断柔性薄膜温度传感器的横截面而直接表征各层材料物性参数。结果表明常规检测方法得到的断面膜层不平整,深度方向的原子浓度信号很弱,测试不准确,而本发明所述的方法得到的断面平整,深度方向的原子浓度信号很强,测试准确。
以上显示和描述了本发明的基本原理、主要特征和本发明的优点。本行业的技术人员应该了解,本发明不受上述实施例的限制,上述实施例和说明书中描述的只是说明本发明的原理,在不脱离本发明精神和范围的前提下,本发明还会有各种变化和改进,这些变化和改进都落入要求保护的本发明范围内。本发明要求保护范围由所附的权利要求书及其等效物界定。
Claims (10)
1.一种柔性薄膜温度传感器,其特征在于,由底部往上依次包括柔性基底层、绝缘层、功能层以及保护层,所述绝缘层与功能层间设置有过渡层,所述过渡层为Ta2O5层,所述Ta2O5层采用射频反应磁控溅射的方法沉积于绝缘层上。
2.根据权利要求1所述的柔性薄膜温度传感器,其特征在于,所述过渡层的厚度为1~10um。
3.根据权利要求1所述的柔性薄膜温度传感器,其特征在于,所述保护层为Al2O3层,保护层的厚度为3~10um。
4.根据权利要求1所述的柔性薄膜温度传感器,其特征在于,所述功能层为ITO/In2O3层,功能层的厚度为1~3um。
5.根据权利要求1所述的柔性薄膜温度传感器,其特征在于,所述绝缘层为单晶硅层,绝缘层的厚度为10~20um。
6.一种如权利要求1~5任一所述的柔性薄膜温度传感器的制备方法,其特征在于,包括如下步骤:
1)准备柔性基底材料备用;
2)将所述绝缘层所需的材料作为靶材,通入纯度99.99%氧气及纯度为99.99%氩气的混合气体作为工作气体,采用磁控溅射的方式将绝缘层沉积于所述柔性基底材料上,磁控溅射功率为300~500w
3)绝缘层沉积完成后,向真空室通入纯度大于99.99%的氩气,调节两磁场电源电流和加于靶上的溅射电压,在绝缘层上依次沉积过渡层、功能层和保护层;
4)进行退火处理;
5)退火结束,在真空室内冷却后取出即可。
7.根据权利要求6所述的柔性薄膜温度传感器的制备方法,其特征在于,退火温度范围为800~1300℃,退火时间维持1~50h。
8.根据权利要求6所述的柔性薄膜温度传感器的制备方法,其特征在于,步骤3)中,磁场电源电流为15~18mA,加于靶上的溅射电压为400~500V。
9.一种柔性薄膜温度传感器的物性检测方法,其特征在于,针对权利要求1~5任一所述的柔性薄膜温度传感器进行物性检测,包括如下步骤:
S1、将所述柔性薄膜温度传感器切割后形成断面,将所述断面用固化剂进行固化处理;
S2、将固化处理后的所述断面表面进行研磨抛光处理,直至所述断面上的结构层露出完整;
S3、将所述断面进行喷金处理和加热处理;
S4、利用场发射扫描电镜进行观测,对各层薄膜厚度进行拍照和记录;将所述场发射扫描电镜继续放大倍数观测各结构层的形貌并进行拍照和记录;
S5、继续进行加热处理,加热处理结束后对所述断面由柔性基底层往保护层方向进行线性能谱扫描,观测各结构层以及结构层沿深度方向的原子浓度。
10.根据权利要求9所述的柔性薄膜温度传感器的物性检测方法,其特征在于,步骤S2中,研磨抛光处理采用分段研磨的方式,第一阶段研磨选用砂纸400~500目,压力15~20N,研磨转速800~900rpm;第二阶段研磨选用砂纸1000~1200目,压力15~20N,研磨转速600~700rpm;第三阶段研磨选用砂纸2000~2200目,压力10~15N,转速600~700rpm。
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