CN114203643A - Elastic compression joint type semiconductor module packaging structure - Google Patents
Elastic compression joint type semiconductor module packaging structure Download PDFInfo
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- CN114203643A CN114203643A CN202111524860.1A CN202111524860A CN114203643A CN 114203643 A CN114203643 A CN 114203643A CN 202111524860 A CN202111524860 A CN 202111524860A CN 114203643 A CN114203643 A CN 114203643A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 12
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 8
- 230000006835 compression Effects 0.000 title abstract description 8
- 238000007906 compression Methods 0.000 title abstract description 8
- 238000002788 crimping Methods 0.000 claims description 11
- 238000003466 welding Methods 0.000 claims description 7
- 239000000565 sealant Substances 0.000 claims description 5
- 238000001746 injection moulding Methods 0.000 claims description 3
- 238000009434 installation Methods 0.000 claims description 3
- 239000000853 adhesive Substances 0.000 claims 1
- 230000001070 adhesive effect Effects 0.000 claims 1
- 229920001296 polysiloxane Polymers 0.000 claims 1
- 230000017525 heat dissipation Effects 0.000 abstract description 13
- 238000007789 sealing Methods 0.000 abstract description 6
- 238000010586 diagram Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000000741 silica gel Substances 0.000 description 4
- 229910002027 silica gel Inorganic materials 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 238000005493 welding type Methods 0.000 description 2
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000008642 heat stress Effects 0.000 description 1
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3142—Sealing arrangements between parts, e.g. adhesion promotors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
The invention discloses an elastic compression joint type semiconductor module packaging structure in the technical field of power semiconductor devices, which comprises an outer frame, wherein a sub-module can be contained in the outer frame, one surface of the outer frame is detachably provided with an emission polar plate, the other surface of the outer frame is sealed with a flange plate, the flange plate comprises a cathode flange plate and an anode flange plate which are fixedly connected, the anode flange plate is positioned at the periphery of the cathode flange plate, the surface of the cathode flange plate, which is far away from one side of the outer frame, is provided with a pressure bearing bulge, and the pressure bearing bulge is electrically connected with a collector electrode of the sub-module when pressure is applied to the outer side. The anode flange and the cathode flange are arranged on the outer frame in a sealing mode, so that the air tightness requirement is met; the pressure bearing protrusion is added, the electrical connection with the sub-module collector is realized, and the improvement of the heat dissipation efficiency is facilitated.
Description
Technical Field
The invention relates to an elastic compression joint type semiconductor module packaging structure, and belongs to the technical field of power semiconductor devices.
Background
The IGBT is a device formed by compounding an MOSFET and a bipolar transistor, has the advantages of the MOSFET and the bipolar transistor, and has excellent flow capacity, switching speed and voltage withstanding level.
With the development of power electronic devices, higher requirements are put forward on the performance of the IGBT device. The power level of the traditional welding type IGBT module cannot be greatly improved due to the design factors such as heat dissipation and stress and the limitation of the process conditions such as welding lead bonding, and meanwhile, the traditional welding type IGBT module has the failure bottleneck caused by thermal stress such as lead falling and welding layer degradation. The crimping type IGBT device has the advantages of double-sided heat dissipation, easiness in series connection and short circuit failure, and is high in voltage level and capacity, so that the crimping type IGBT device is widely applied to occasions with high voltage and high power. The method has wide application prospect in the fields of wind power, renewable resource generation and integration of solar lamps, island power supply, large-scale urban power supply, static var generators, static synchronous compensators and the like
The existing compression joint module realizes the stress uniformity of each parallel chip by arranging the elastic component in the sub-module, and can flexibly adjust the current level of the module by adjusting the number of the sub-modules. However, the collector side of each sub-module is directly communicated with the outside, so that the device has poor sealing performance. To abominable operational environment such as marine flexible direct current transmission, humidity is high in the environment and simultaneously probably contains gases such as corrosive hydrogen sulfide, thereby gets into the module inside and corrodes electrical connection structure easily and arouse the device inefficacy, and the module is independent simultaneously and external radiator contact separately, and heat radiating area is limited, and the radiating efficiency is lower relatively.
Disclosure of Invention
The invention aims to overcome the defects in the prior art and provides an elastic compression joint type semiconductor module packaging structure, wherein an anode flange and a cathode flange are arranged through an outer frame in a sealing way, so that the requirement of air tightness is met; the pressure bearing protrusion is added, the electrical connection with the sub-module collector is realized, and the improvement of the heat dissipation efficiency is facilitated.
In order to achieve the purpose, the invention is realized by adopting the following technical scheme:
the invention provides an elastic compression joint type semiconductor module packaging structure which comprises an outer frame, wherein a sub-module can be contained in the outer frame, one surface of the outer frame is detachably provided with an emission polar plate, the other surface of the outer frame is sealed with a flange plate, the flange plate comprises a cathode flange plate and an anode flange plate which are fixedly connected, the anode flange plate is positioned on the periphery of the cathode flange plate, the surface of the cathode flange plate, far away from one side of the outer frame, is provided with a pressure bearing bulge, and the pressure bearing bulge is electrically connected with a sub-module collector when pressure is applied to the outer side.
Furthermore, the surface of the pressure bearing bulge is provided with a positioning hole.
Furthermore, the anode flange plate and the outer frame are integrated into a whole through injection molding.
Furthermore, the cathode flange plate and the anode flange plate are combined together through cold pressure welding.
Furthermore, the emitting polar plate is glued on the outer frame, and the edge of the gluing part is coated with a sealant.
Further, the frame that the frame inboard was provided with the holding submodule group, and the edge that the positive pole ring flange was kept away from to the frame has seted up the mounting groove, the inboard of transmission polar plate be fixed with frame and mounting groove size position assorted fixed frame, and the transmission polar plate with the frame installation after fixed, fixed frame can inlay in the mounting groove and laminate mutually with submodule group.
Furthermore, silica gel is filled between the sub-modules in the frame.
Furthermore, the thickness of the edge of the cathode flange plate is thinner than that of the pressure-bearing bulge.
Compared with the prior art, the invention has the following beneficial effects:
according to the invention, the anode flange is arranged on the outer frame of the module, the cathode flange is correspondingly arranged at the same time, and the flanges are sealed by cold pressure welding, so that the air tightness requirement is met; simultaneously, the bearing bulge increases the heat dissipation area of the collector side of the module, the improvement of the heat dissipation efficiency is facilitated, compared with the prior art, the sub-module and the external direct communication are changed into the mode of adding a flange at the outer frame for sealing, silica gel is poured inside the module, and finally, sealant is coated on the emitting pole plate and the edge of the outer frame, the air tightness of the module is ensured, the module can be applied to the working environment with high humidity and corrosive gas, meanwhile, the flange surface is used as a radiator to increase the heat dissipation area of the module, the heat dissipation capability of the module is enhanced, and the reliability of the module is improved.
Drawings
FIG. 1 is a schematic diagram of a conventional crimping type IGBT package structure;
fig. 2 is a first overall schematic diagram of an elastic crimping type IGBT package structure according to a first embodiment of the present invention;
fig. 3 is a second overall schematic diagram of an elastic crimping type IGBT package structure according to a first embodiment of the present invention;
fig. 4 is a cross-sectional view of an elastic crimping type IGBT package structure according to a first embodiment of the present invention;
fig. 5 is one of schematic diagrams of an elastic crimping type IGBT package structure frame according to a first embodiment of the present invention;
fig. 6 is a second schematic diagram of the elastic crimping type IGBT package structure frame according to the first embodiment of the invention;
fig. 7 is one of schematic mounting diagrams of an elastic crimping type IGBT package structure according to a first embodiment of the present invention;
fig. 8 is a second schematic view illustrating the installation of the elastic crimping type IGBT package structure according to the first embodiment of the invention.
In the figure: 1. an outer frame; 2. an emitting electrode plate; 3. an anode flange plate; 4. a cathode flange; 5. a pressure bearing bulge; 6. positioning holes; 7. a sub-module; 8. a fixing frame; 101. a frame; 102. and (4) mounting the groove.
Detailed Description
The invention is further described below with reference to the accompanying drawings. The following examples are only for illustrating the technical solutions of the present invention more clearly, and the protection scope of the present invention is not limited thereby.
Example (b):
fig. 1 shows a conventional package structure of an elastic compression-joint type semiconductor module, which comprises an outer frame, an emitting electrode plate, a PCB, and a plurality of sub-modules connected in parallel. The sub-module comprises a semiconductor chip, a chip front side conductor, a chip back side conductor, an elastic component (an electric shock element, a spring element, a column, a contact sleeve, a conductive gasket, a grid lead, a collecting electrode plate and an emitting electrode plate) and an outer frame.
This embodiment provides an elastic compression-joint type semiconductor module packaging structure, please refer to fig. 2-3, which includes an outer frame 1, an anode flange 3, a cathode flange 4 and a pressure-bearing protrusion 5, wherein the anode flange 3 is located at the bottom of the outer frame 1, the anode flange 3 and the cathode flange are integrated by injection molding, the cathode flange 4 is a conductive electrode, the middle part of the cathode flange is thicker to form the pressure-bearing protrusion 5 for bearing the external pressure, the edge of the cathode flange 4 is thinner than the pressure-bearing protrusion 5 for stress buffering, please refer to fig. 4-8, during assembly, the cathode flange 4 and the anode flange 3 are combined together by cold welding through a positioning hole 6 on the pressure-bearing protrusion 5, then the sub-modules 7 are sequentially placed into the outer frame 1, the inner side of the outer frame 1 is provided with a frame 101 for accommodating the sub-modules 7, and the edge of the outer frame 1 far away from the anode flange 3 is provided with a mounting groove 102, after the sub-module 7 is placed in the frame 101, silica gel is filled in the outer frame 1, the transmitting polar plate 2 is glued on the outer frame 1, the edge of the transmitting polar plate is coated with sealant to realize module sealing, a fixing frame 8 matched with the frame 101 and the mounting groove 102 in size and position is fixed on the inner side of the transmitting polar plate 2, and after the transmitting polar plate 2 is mounted, the fixing frame 8 can be embedded in the mounting groove 102 and attached to the sub-module 7 to further fix the sub-module 7. During operation, pressure is applied to the outer side of the pressure-bearing protrusion 5 to achieve electrical connection with a collector of the sub-module 7, the pressure-bearing protrusion 5 serves as a large electric conductor to increase the contact area with an external radiator, the heat dissipation efficiency of the module can be effectively improved, and the reliability of the module is improved.
In the embodiment, aiming at the problem that the emitting electrodes of each sub-module of the elastic compression joint module are directly communicated with the outside, the anode flange is arranged on the outer frame of the module, the cathode flange is correspondingly arranged at the same time, and the flanges are sealed by cold pressure welding to meet the requirement of air tightness; simultaneously, the bearing bulge increases the heat dissipation area of the collector side of the module, the improvement is favorable for improving the heat dissipation efficiency, the improvement is carried out, the sub-module and the external direct communication are changed into the mode that the flange is additionally arranged on the outer frame for sealing, silica gel is poured into the module, finally, sealant is coated on the emitting pole plate and the edge of the outer frame, the air tightness of the module is ensured, the module can be applied to the working environment with high humidity and corrosive gas, the flange face serves as a radiator to increase the heat dissipation area of the module, the heat dissipation capacity of the module is favorably enhanced, and the reliability of the module is improved.
The above description is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, several modifications and variations can be made without departing from the technical principle of the present invention, and these modifications and variations should also be regarded as the protection scope of the present invention.
Claims (8)
1. The utility model provides an elasticity crimping formula semiconductor module packaging structure, characterized by, but includes the inside frame that holds the submodule group, one side demountable installation of frame has emission polar plate and another side to seal has the ring flange, the ring flange includes fixed connection's negative pole ring flange and positive pole ring flange, the positive pole ring flange is located the periphery of negative pole ring flange, keeps away from frame one side the surface of negative pole ring flange is provided with the pressure-bearing arch, the pressure-bearing arch when exerting pressure in the outside with submodule group collecting electrode electrical connection.
2. The package structure of claim 1, wherein the surface of the pressure-bearing protrusion has positioning holes.
3. The package structure of claim 1, wherein the anode flange and the outer frame are integrally formed by injection molding.
4. The package structure of claim 1, wherein the cathode flange and the anode flange are bonded together by cold press welding.
5. The package structure of claim 1, wherein the emitter plate is adhered to the frame, and the edge of the adhesive is coated with a sealant.
6. The package structure of claim 1, wherein a frame for accommodating the sub-module is disposed at an inner side of the outer frame, and an edge of the outer frame away from the anode flange has a mounting groove, a fixing frame is fixed at an inner side of the emitter plate and is matched with the frame and the mounting groove in size and position, and the fixing frame can be embedded in the mounting groove and fit with the sub-module after the emitter plate is mounted and fixed to the outer frame.
7. The package structure of claim 1, wherein the sub-modules within the frame are filled with silicone.
8. The package structure of claim 1, wherein the thickness of the cathode flange is thinner than the thickness of the pressure-bearing protrusion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111524860.1A CN114203643A (en) | 2021-12-14 | 2021-12-14 | Elastic compression joint type semiconductor module packaging structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111524860.1A CN114203643A (en) | 2021-12-14 | 2021-12-14 | Elastic compression joint type semiconductor module packaging structure |
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| Publication Number | Publication Date |
|---|---|
| CN114203643A true CN114203643A (en) | 2022-03-18 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111524860.1A Pending CN114203643A (en) | 2021-12-14 | 2021-12-14 | Elastic compression joint type semiconductor module packaging structure |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07122669A (en) * | 1993-10-28 | 1995-05-12 | Fuji Electric Co Ltd | Power semiconductor device |
| CN105448849A (en) * | 2015-12-05 | 2016-03-30 | 江阴市赛英电子有限公司 | Ceramic package housing with replaceable internal electrodes |
| CN108346645A (en) * | 2017-01-24 | 2018-07-31 | 比亚迪股份有限公司 | A kind of power module and its manufacturing method |
| CN112687676A (en) * | 2020-12-14 | 2021-04-20 | 株洲中车时代半导体有限公司 | Crimping type IGBT sub-module and crimping type IGBT module |
| CN113725179A (en) * | 2021-07-27 | 2021-11-30 | 南瑞联研半导体有限责任公司 | Elastic submodule group and modularized crimping type semiconductor module |
| CN216849898U (en) * | 2021-12-14 | 2022-06-28 | 南瑞联研半导体有限责任公司 | Elastic compression joint type semiconductor module packaging structure |
-
2021
- 2021-12-14 CN CN202111524860.1A patent/CN114203643A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07122669A (en) * | 1993-10-28 | 1995-05-12 | Fuji Electric Co Ltd | Power semiconductor device |
| CN105448849A (en) * | 2015-12-05 | 2016-03-30 | 江阴市赛英电子有限公司 | Ceramic package housing with replaceable internal electrodes |
| CN108346645A (en) * | 2017-01-24 | 2018-07-31 | 比亚迪股份有限公司 | A kind of power module and its manufacturing method |
| CN112687676A (en) * | 2020-12-14 | 2021-04-20 | 株洲中车时代半导体有限公司 | Crimping type IGBT sub-module and crimping type IGBT module |
| CN113725179A (en) * | 2021-07-27 | 2021-11-30 | 南瑞联研半导体有限责任公司 | Elastic submodule group and modularized crimping type semiconductor module |
| CN216849898U (en) * | 2021-12-14 | 2022-06-28 | 南瑞联研半导体有限责任公司 | Elastic compression joint type semiconductor module packaging structure |
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