CN114192915A - IGBT welding process method - Google Patents
IGBT welding process method Download PDFInfo
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- CN114192915A CN114192915A CN202111612485.6A CN202111612485A CN114192915A CN 114192915 A CN114192915 A CN 114192915A CN 202111612485 A CN202111612485 A CN 202111612485A CN 114192915 A CN114192915 A CN 114192915A
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- welding
- solder paste
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- 238000003466 welding Methods 0.000 title claims abstract description 100
- 238000000034 method Methods 0.000 title claims abstract description 59
- 229910000679 solder Inorganic materials 0.000 claims abstract description 80
- 238000002844 melting Methods 0.000 claims abstract description 31
- 230000008018 melting Effects 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 238000005476 soldering Methods 0.000 claims abstract description 14
- 239000000047 product Substances 0.000 claims description 27
- 239000000919 ceramic Substances 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 18
- 239000011265 semifinished product Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract description 21
- 229910000831 Steel Inorganic materials 0.000 abstract description 5
- 239000010959 steel Substances 0.000 abstract description 5
- 238000005054 agglomeration Methods 0.000 abstract description 2
- 230000002776 aggregation Effects 0.000 abstract description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 230000002035 prolonged effect Effects 0.000 abstract 1
- 238000010923 batch production Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000011800 void material Substances 0.000 description 3
- 239000011324 bead Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012858 packaging process Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/008—Soldering within a furnace
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Abstract
The invention discloses an IGBT welding process method, which comprises the following steps: high-temperature solder paste printing → IGBT, FRD paster → one-time high-temperature welding → copper substrate printing → low-temperature solder paste printing → DBC, bottom plate assembly → secondary low-temperature welding. According to the invention, the SnPbAg low-temperature tin paste is adopted for secondary welding, the soldering tin on the first reflow surface can not be secondarily melted after reaching the melting point of the tin paste, the cavity can not be deteriorated, the yield of IGBT products is improved, the high-temperature tin paste adopts SnAgCu, the melting point is 217 ℃, the low-temperature tin paste adopts SnPbAg, the melting point is 179 ℃, the melting point is higher than the bearable limit temperature of a chip, the reliability of the products can be ensured, the low-temperature tin paste is used for secondary welding, the generation of tin balls and tin bridges can be reduced, the mold is easy to disassemble, the appearance failure of the products caused by process problems is reduced, the low-temperature tin paste has excellent printability, the phenomena of missing depression and agglomeration in the printing process can be eliminated, and the service life of a steel mesh is prolonged.
Description
Technical Field
The invention relates to the technical field of welding, in particular to an IGBT welding process method.
Background
Insulated Gate Bipolar Transistor (IGBT) power semiconductor module reliability is a major concern in manufacturing applications. In the packaging process of the IGBT power module, the quality of welding layers between a chip and a DBC and between the DBC and a metal base plate and the voidage of the welding layers have direct influence on the working performance and the long-term reliability of the IGBT module.
In the packaging process of the IGBT, two times of reflow soldering are generally carried out, wherein one time of soldering is soldering between the chip and the DBC, and the second time of soldering is soldering between the DBC and the metal base plate. In the prior art, SnAgCu tin paste is adopted for primary welding and secondary welding. When the solder paste with the same melting point is used for secondary welding, the welded first reflow surface is easy to cause cavity deterioration, false welding and even falling off, the cavity deterioration is easy to cause in the traditional welding process and technology after the secondary welding, the product quality and yield are influenced, the phenomenon of overhigh temperature rise can be caused in practical application, the service life and the reliability of the product are further influenced, the secondary welding is the welding between a DBC and a bottom plate, particularly for a large-area DBC substrate, the used amount of the tin paste is large, tin beads and tin bridges can be easily generated by using the high-temperature tin paste, the amount of the welding flux around the mold is large, the mold is difficult to disassemble, the appearance of the product is influenced, and the production efficiency is also influenced; the long-term use of the high-temperature solder paste can reduce the service life of the steel mesh and the die, increase the replacement frequency of the steel mesh and the die and cause resource waste.
Disclosure of Invention
The invention aims to provide an IGBT welding process method to solve the problems in the background technology.
In order to achieve the purpose, the invention provides the following technical scheme:
an IGBT welding process method is characterized in that IGBT welding materials comprise a DBC ceramic copper-clad plate, high-temperature solder paste, an IGBT chip, an FRD chip, a metal substrate and low-temperature solder paste, and the welding process specifically comprises the following steps:
s1: printing a layer of high-temperature solder paste on the upper surface of the DBC ceramic copper-clad plate;
s2: placing the IGBT chip and the FRD chip above the high-temperature solder paste by an automatic chip mounter;
s3: loading the DBC ceramic copper-clad plate with the attached chip into a vacuum welding furnace, and carrying out primary high-temperature welding;
s4: printing a layer of low-temperature solder paste on the upper surface of the metal substrate;
s5: assembling the DBC ceramic copper-clad plate welded at the high temperature in the step S3 and the metal substrate coated with the low-temperature solder paste on the upper surface in the step S4 by using a positioning clamp to obtain a semi-finished product;
s6: and finally, placing the assembled semi-finished product into a vacuum welding furnace for secondary low-temperature welding, wherein the temperature of the secondary welding is lower than that of the primary welding, and obtaining a finished product.
Preferably, the thickness of the high temperature solder paste in step S1 is 0.2 to 0.3 mm.
Preferably, the thickness of the low temperature solder paste in step S4 is 0.2-0.3 mm.
Preferably, the high-temperature solder paste adopts SnAgCu, and the melting point is 217 ℃.
Preferably, the low-temperature solder paste is SnPbAg low-temperature solder paste, the melting point is 179 ℃, and the melting point is higher than the bearable limit temperature of the chip.
Preferably, in step S6, low-temperature solder paste is used for the secondary low-temperature soldering.
Compared with the prior art, the invention has the beneficial effects that:
1. in the IGBT welding process method, the SnPbAg low-temperature solder paste is adopted for secondary welding, the solder on the first reflow surface cannot be secondarily melted after the solder reaches the melting point of the SnPbAg low-temperature solder paste, and the cavity cannot be deteriorated.
2. The IGBT welding process method prevents good products after one-time welding from being converted into defective products, and improves the yield of IGBT products.
3. In the IGBT welding process method, the high-temperature solder paste adopts SnAgCu, the melting point is 217 ℃, the low-temperature solder paste adopts SnPbAg, the melting point is 179 ℃, the melting point is higher than the bearable limit temperature of the chip, and the reliability of the product can be ensured.
4. In the IGBT welding process method, the low-temperature tin paste is used for secondary welding, so that the generation of tin balls and tin bridges can be reduced, the mold is easier to disassemble, and the product appearance failure caused by process problems is reduced.
5. In the IGBT welding process method, the low-temperature solder paste has excellent printability, can eliminate missing depressions and caking phenomena in the printing process, and prolongs the service life of the steel mesh.
Drawings
Fig. 1 is a schematic diagram of an IGBT module assembly of the invention;
FIG. 2 is a schematic diagram of a conventional IGBT module welding process;
fig. 3 is a schematic diagram of the welding process of the IGBT module according to the present invention.
The meaning of the various reference symbols in the drawings:
1. a DBC ceramic copper-clad plate; 2. high-temperature solder paste; 3. an IGBT chip; 4. an FRD chip; 5. a metal substrate; 6. and (5) low-temperature solder paste.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention and the attached drawings belong to the protection scope of the present invention.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like, indicate orientations and positional relationships based on those shown in the drawings, and are used only for convenience of description and simplicity of description, and do not indicate or imply that the equipment or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be considered as limiting the present invention.
Example 1
An IGBT welding process method is characterized in that IGBT welding materials comprise a DBC ceramic copper-clad plate 1, high-temperature solder paste 2, an IGBT chip 3, an FRD chip 4, a metal substrate 5 and low-temperature solder paste 6, and the welding process specifically comprises the following steps:
s1: printing a layer of high-temperature solder paste 2 on the upper surface of the DBC ceramic copper-clad plate 1;
s2: placing the IGBT chip 3 and the FRD chip 4 above the high-temperature solder paste 2 by an automatic chip mounter;
s3: loading the DBC ceramic copper-clad plate 1 with the attached chip into a vacuum welding furnace, and carrying out primary high-temperature welding;
s4: printing a layer of low-temperature solder paste 6 on the upper surface of the metal substrate 5;
s5: assembling the DBC ceramic copper-clad plate 1 welded at the high temperature in the step S3 and the metal substrate 5 coated with the low-temperature solder paste 6 on the upper surface in the step S4 by using a positioning fixture to obtain a semi-finished product;
s6: and finally, placing the assembled semi-finished product into a vacuum welding furnace for secondary low-temperature welding, wherein the temperature of secondary welding is lower than that of primary welding to obtain a finished product, and realizing the requirement of low void ratio through specific welding parameters, wherein the temperature of secondary welding is lower than that of primary welding, and the soldering tin on the first reflow surface can not be secondarily melted after the welded product reaches the melting point, so that the cavity after primary welding can not be deteriorated, the product yield is improved, and a foundation and guarantee are provided for batch production of IGBT products.
In this embodiment, the thickness of the high-temperature solder paste 2 in step S1 is 0.25mm, the thickness of the low-temperature solder paste 6 in step S4 is 0.25mm, the high-temperature solder paste 2 is SnAgCu, the melting point is 217 ℃, the low-temperature solder paste 6 is SnPbAg low-temperature solder paste, the melting point is 179 ℃, the melting point is higher than the tolerable limit temperature of the chip, and the low-temperature solder paste 6 is used in the secondary low-temperature soldering in step S6.
Example 2
An IGBT welding process method is characterized in that IGBT welding materials comprise a DBC ceramic copper-clad plate 1, high-temperature solder paste 2, an IGBT chip 3, an FRD chip 4, a metal substrate 5 and low-temperature solder paste 6, and the welding process specifically comprises the following steps:
s1: printing a layer of high-temperature solder paste 2 on the upper surface of the DBC ceramic copper-clad plate 1;
s2: placing the IGBT chip 3 and the FRD chip 4 above the high-temperature solder paste 2 by an automatic chip mounter;
s3: loading the DBC ceramic copper-clad plate 1 with the attached chip into a vacuum welding furnace, and carrying out primary high-temperature welding;
s4: printing a layer of low-temperature solder paste 6 on the upper surface of the metal substrate 5;
s5: assembling the DBC ceramic copper-clad plate 1 welded at the high temperature in the step S3 and the metal substrate 5 coated with the low-temperature solder paste 6 on the upper surface in the step S4 by using a positioning fixture to obtain a semi-finished product;
s6: and finally, placing the assembled semi-finished product into a vacuum welding furnace for secondary low-temperature welding, wherein the temperature of secondary welding is lower than that of primary welding to obtain a finished product, and realizing the requirement of low void ratio through specific welding parameters, wherein the temperature of secondary welding is lower than that of primary welding, and the soldering tin on the first reflow surface can not be secondarily melted after the welded product reaches the melting point, so that the cavity after primary welding can not be deteriorated, the product yield is improved, and a foundation and guarantee are provided for batch production of IGBT products.
In this embodiment, the thickness of the high-temperature solder paste 2 in step S1 is 0.2mm, the thickness of the low-temperature solder paste 6 in step S4 is 0.2mm, the high-temperature solder paste 2 is SnAgCu, the melting point is 217 ℃, the low-temperature solder paste 6 is SnPbAg low-temperature solder paste, the melting point is 179 ℃, the melting point is higher than the tolerable limit temperature of the chip, and the low-temperature solder paste 6 is used in the secondary low-temperature soldering in step S6.
Example 3
An IGBT welding process method is characterized in that IGBT welding materials comprise a DBC ceramic copper-clad plate 1, high-temperature solder paste 2, an IGBT chip 3, an FRD chip 4, a metal substrate 5 and low-temperature solder paste 6, and the welding process specifically comprises the following steps:
s1: printing a layer of high-temperature solder paste 2 on the upper surface of the DBC ceramic copper-clad plate 1;
s2: placing the IGBT chip 3 and the FRD chip 4 above the high-temperature solder paste 2 by an automatic chip mounter;
s3: loading the DBC ceramic copper-clad plate 1 with the attached chip into a vacuum welding furnace, and carrying out primary high-temperature welding;
s4: printing a layer of low-temperature solder paste 6 on the upper surface of the metal substrate 5;
s5: assembling the DBC ceramic copper-clad plate 1 welded at the high temperature in the step S3 and the metal substrate 5 coated with the low-temperature solder paste 6 on the upper surface in the step S4 by using a positioning fixture to obtain a semi-finished product;
s6: and finally, placing the assembled semi-finished product into a vacuum welding furnace for secondary low-temperature welding, wherein the temperature of secondary welding is lower than that of primary welding to obtain a finished product, and realizing the requirement of low void ratio through specific welding parameters, wherein the temperature of secondary welding is lower than that of primary welding, and the soldering tin on the first reflow surface can not be secondarily melted after the welded product reaches the melting point, so that the cavity after primary welding can not be deteriorated, the product yield is improved, and a foundation and guarantee are provided for batch production of IGBT products.
In this embodiment, the thickness of the high-temperature solder paste 2 in step S1 is 0.3mm, the thickness of the low-temperature solder paste 6 in step S4 is 0.3mm, the high-temperature solder paste 2 is SnAgCu, the melting point is 217 ℃, the low-temperature solder paste 6 is SnPbAg low-temperature solder paste, the melting point is 179 ℃, the melting point is higher than the tolerable limit temperature of the chip, and the low-temperature solder paste 6 is used in the secondary low-temperature soldering in step S6.
The IGBT welding process method of the invention provides a new welding process method, high-temperature tin paste is used for primary welding, low-temperature tin paste is used for secondary welding, and the beneficial effects of the technology are as follows:
1) the secondary welding adopts SnPbAg low-temperature solder paste, the solder on the primary reflow surface can not be secondarily melted after the solder reaches the melting point of the solder, and the cavity can not be deteriorated;
2) the process can not convert the good products after one-time welding into defective products, and improves the yield of IGBT products;
3) the high-temperature solder paste adopts SnAgCu, the melting point is 217 ℃, the low-temperature solder paste adopts SnPbAg, the melting point is 179 ℃, the melting point is higher than the bearable limit temperature of the chip, and the reliability of the product can be ensured;
4) the secondary welding uses low-temperature tin paste, so that the generation of tin beads and tin bridges can be reduced, the mould is easier to disassemble, and the appearance failure of the product caused by process problems is reduced;
5) the low-temperature solder paste has excellent printability, can eliminate the phenomena of missing depression and agglomeration in the printing process, and prolongs the service life of the steel mesh.
The foregoing shows and describes the general principles, essential features, and advantages of the invention. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, and the preferred embodiments of the present invention are described in the above embodiments and the description, and are not intended to limit the present invention. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (6)
1. An IGBT welding process method is characterized in that: the IGBT welding material comprises a DBC ceramic copper-clad plate (1), high-temperature solder paste (2), an IGBT chip (3), an FRD chip (4), a metal substrate (5) and low-temperature solder paste (6), and the welding process specifically comprises the following steps:
s1: printing a layer of high-temperature solder paste (2) on the upper surface of the DBC ceramic copper-clad plate (1);
s2: placing the IGBT chip (3) and the FRD chip (4) above the high-temperature solder paste (2) through an automatic chip mounter;
s3: loading the DBC ceramic copper-clad plate (1) pasted with the chip into a vacuum welding furnace, and carrying out primary high-temperature welding;
s4: printing a layer of low-temperature solder paste (6) on the upper surface of the metal substrate (5);
s5: assembling the DBC ceramic copper-clad plate (1) welded at the high temperature in the step S3 and the metal substrate (5) coated with the low-temperature solder paste (6) on the upper surface in the step S4 by using a positioning clamp to obtain a semi-finished product;
s6: and finally, placing the assembled semi-finished product into a vacuum welding furnace for secondary low-temperature welding, wherein the temperature of the secondary welding is lower than that of the primary welding, and obtaining a finished product.
2. The IGBT welding process method according to claim 1, characterized in that: in step S1, the thickness of the high-temperature solder paste (2) is 0.2-0.3 mm.
3. The IGBT welding process method according to claim 1, characterized in that: the thickness of the low-temperature solder paste (6) in the step S4 is 0.2-0.3 mm.
4. The IGBT welding process method according to claim 1, characterized in that: the high-temperature solder paste (2) adopts SnAgCu, and the melting point is 217 ℃.
5. The IGBT welding process method according to claim 1, characterized in that: the low-temperature solder paste (6) is SnPbAg low-temperature solder paste, the melting point is 179 ℃, and the melting point is higher than the bearable limit temperature of the chip.
6. The IGBT welding process method according to claim 1, characterized in that: in step S6, the low-temperature solder paste (6) is used for the second low-temperature soldering.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111612485.6A CN114192915A (en) | 2021-12-27 | 2021-12-27 | IGBT welding process method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202111612485.6A CN114192915A (en) | 2021-12-27 | 2021-12-27 | IGBT welding process method |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114682870A (en) * | 2022-03-29 | 2022-07-01 | 联宝(合肥)电子科技有限公司 | POP hybrid welding process and system |
| CN115194276A (en) * | 2022-07-13 | 2022-10-18 | 旻芯半导体(嘉兴)有限公司 | Welding process of endoscope illumination module |
| CN116313857A (en) * | 2023-05-25 | 2023-06-23 | 赛晶亚太半导体科技(北京)有限公司 | IGBT welding method for prefabricated tin material |
| CN116721989A (en) * | 2023-08-10 | 2023-09-08 | 烟台台芯电子科技有限公司 | IGBT module and packaging technology |
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Application publication date: 20220318 |