CN114188425B - 一种光探测器件的制备方法 - Google Patents

一种光探测器件的制备方法 Download PDF

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CN114188425B
CN114188425B CN202111491980.6A CN202111491980A CN114188425B CN 114188425 B CN114188425 B CN 114188425B CN 202111491980 A CN202111491980 A CN 202111491980A CN 114188425 B CN114188425 B CN 114188425B
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彭雪
吕燕飞
蔡庆锋
赵士超
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Abstract

本发明公开了一种光探测器件的制备方法，将生长于基底表面的磷化亚铜二维薄膜安放于热蒸发蒸镀仪器的样品座上，通过掩膜法在磷化亚铜表面沉积银电极；通过掩膜法在磷化亚铜表面沉积银电极，具体为：首先抽真空，当腔体真空度低于10pa时，将衬底加热至150℃～350℃；待真空计示数低于4.0×10‑3Pa时，开始蒸镀银薄膜；通过调节蒸发电流来控制蒸发速率，蒸发速率调节于1.8‑2.2A/s；当薄膜厚度增长至200～500纳米时，停止蒸镀，待其冷却至室温时，获得器件。本发明通过磷化亚铜与金属材料结合，形成肖特基二极管，制备该二极管所需原材料丰富，制备简单，成本低，对于可见光与近红外光光效应速率较好。

Description

一种光探测器件的制备方法
技术领域
本发明属于材料与器件技术领域，具体涉及光探测器件的制备方法。
背景技术
磷化亚铜常用于铜焊料，它的光、热、电性能的研究相对滞后。对于该材料的光热电性能研究将会扩大它的应用领域。磷化亚铜是一种p型半导体材料，该材料能够吸收光，产生光电导现象，由它制备的肖特基二极管或与n型材料制备的pn节二极管，光照能够产生光电效应，产生光伏现象。但是该材料光电性能差，不是很好地光电材料。磷化亚铜光照后，能够吸收光的能量转变成热能，本专利利用该性质，结合肖特基二极管的性能，制备了由银与二维磷化亚铜薄膜构成的肖特基二极管，实现对光的探测。可实现可见光与近红外波长范围光信号的探测。
发明内容
本发明针对现有研究不足，制备了磷化亚铜与银形成的肖特基二极管，该器件能够用于探测可见光与近红外光。与硅基光电二极管相比，该器件所用材料制备简单，成本低。
一种光探测器件的制备方法，该方法具体如下：
将生长于基底表面的磷化亚铜二维薄膜安放于热蒸发蒸镀仪器的样品座上，通过掩膜法在磷化亚铜表面沉积银电极；
通过掩膜法在磷化亚铜表面沉积银电极，具体为：首先抽真空，当腔体真空度低于10pa时，将衬底加热至150℃～350℃；待真空计示数低于4.0×10-3Pa时，开始蒸镀银薄膜；通过调节蒸发电流来控制蒸发速率，蒸发速率调节于1.8-2.2A/s；当薄膜厚度增长至200～500纳米时，停止蒸镀，待其冷却至室温时，获得器件。
作为优选，生长于基底表面的磷化亚铜二维薄膜制备方法为：
步骤(1)将磷化亚铜粉末或块体放入刚玉舟中，然后转入刚玉管中，并在刚玉管口倾斜45°放入表面生长有氧化层的硅片；抽真空，充入1个大气压的氩气，然后刚玉管两端密封；
步骤(2).将刚玉管中间通过管式炉加热至700～850℃，刚玉管口的温度为550～700℃，升温速率为10℃/min；保温时间为10～30min；然后自然冷却至室温，之后取出刚玉管口的产物，获得在基底表面生长的磷化亚铜二维薄膜。
作为优选，所述的磷化亚铜二维薄膜替换为铜或氧化铜磷化后形成的磷化亚铜薄膜，制备的薄膜的厚度为10-2000nm。
作为优选，所述的银电极替换为金、钯、铝、焊锡。
作为优选，所述的衬底为玻璃衬底，玻璃衬底尺寸为20mm×5mm×1mm尺寸大小。
作为优选，所述的刚玉管直径为1英寸且抽真空的装置带尾气净化设备。
作为优选，所述的有氧化层的硅片尺寸为2.5～3.5cm×1.5～2.0cm。
作为优选，所述的刚玉舟尺寸为0.8cm×0.6cm×6cm。
作为优选，所述的磷化亚铜二维薄膜的厚度为2-10nm。
本发明的优点是：本发明利用模板热蒸镀法在表面生长有磷化亚铜的铜箔的两端沉积出银电极，制作方法简单，器件性能重复性高。本发明磷化亚铜与金属材料结合，形成肖特基二极管，制备该二极管所需原材料丰富，制备简单，成本低，对于可见光与近红外光光效应速率较好。
附图说明
图1为光探测器件光照前后热温差电势的变化图。
具体实施方式
实施例一：
步骤(1)将磷化亚铜粉末或块体放入尺寸为0.8cm×0.6cm×6cm刚玉舟中，然后转入直径为1英寸的刚玉管中，并在刚玉管口倾斜45°放入尺寸为2.5～3.5cm表面生长有氧化层的硅片；抽真空，充入1个大气压的氩气，然后刚玉管两端密封；
步骤(2).将刚玉管中间通过管式炉加热至700℃，刚玉管口的温度为550℃，升温速率为10℃/min；保温时间为10min；然后自然冷却至室温，之后取出刚玉管口的产物，获得在基底表面生长的磷化亚铜二维薄膜。
生长于基底表面的磷化亚铜二维薄膜安放于热蒸发蒸镀仪器的样品座上，抽真空，当腔体真空度低于10pa时，将衬底加热至150℃℃；待真空计示数低于4.0×10-3Pa时，开始蒸镀银薄膜；通过调节蒸发电流来控制蒸发速率，蒸发速率调节于2A/s；当薄膜厚度增长至200纳米时，停止蒸镀，待其冷却至室温时，获得器件。
如图1所示，为光探测器件——银/磷化亚铜肖特基二极管，负极区在365nm光照前后，热温差电势的变化图。水平段为光照前，上升段为光照阶段。
实施例二：
步骤(1)将磷化亚铜粉末或块体放入尺寸为0.8cm×0.6cm×6cm刚玉舟中，然后转入直径为1英寸的刚玉管中，并在刚玉管口倾斜45°放入尺寸为1.5～2.0cm表面生长有氧化层的硅片；抽真空，充入1个大气压的氩气，然后刚玉管两端密封；
步骤(2).将刚玉管中间通过管式炉加热至850℃，刚玉管口的温度为700℃，升温速率为10℃/min；保温时间为30min；然后自然冷却至室温，之后取出刚玉管口的产物，获得在基底表面生长的磷化亚铜二维薄膜。
生长于基底表面的磷化亚铜二维薄膜安放于热蒸发蒸镀仪器的样品座上，抽真空，当腔体真空度低于10pa时，将衬底加热至350℃；待真空计示数低于4.0×10-3Pa时，开始蒸镀银薄膜；通过调节蒸发电流来控制蒸发速率，蒸发速率调节于1.8A/s；当薄膜厚度增长至300纳米时，停止蒸镀，待其冷却至室温时，获得器件。
实施例三：
将磷化亚铜粉末或块体放入尺寸为0.8cm×0.6cm×6cm刚玉舟中，然后转入直径为1英寸的刚玉管中，并在刚玉管口倾斜45°放入尺寸为1.5～2.0cm表面生长有氧化层的硅片；抽真空，充入1个大气压的氩气，然后刚玉管两端密封；
步骤(2).将刚玉管中间通过管式炉加热至800℃，刚玉管口的温度为650℃，升温速率为10℃/min；保温时间为25min；然后自然冷却至室温，之后取出刚玉管口的产物，获得在基底表面生长的磷化亚铜二维薄膜。
生长于基底表面的磷化亚铜二维薄膜安放于热蒸发蒸镀仪器的样品座上，抽真空，当腔体真空度低于10pa时，将衬底加热至280℃；待真空计示数低于4.0×10-3Pa时，开始蒸镀银薄膜；通过调节蒸发电流来控制蒸发速率，蒸发速率调节于2.2A/s；当薄膜厚度增长至450纳米时，停止蒸镀，待其冷却至室温时，获得器件。

Claims (8)

1.一种光探测器件的制备方法，其特征在于，该方法具体如下：
将表面生长有磷化亚铜二维薄膜的基底安放于热蒸发蒸镀仪器的样品座上，通过掩膜法在磷化亚铜表面沉积银电极；
基底表面的磷化亚铜二维薄膜制备方法为：
步骤(1)将磷化亚铜粉末或块体放入刚玉舟中，然后转入刚玉管中，并在刚玉管口倾斜放入表面生长有氧化层的硅片；抽真空，充入1个大气压的氩气，然后刚玉管两端密封；
步骤(2).将刚玉管中间通过管式炉加热至700～850℃，刚玉管口的温度为550～700℃，升温速率为10℃/min；保温时间为10～30min；然后自然冷却至室温，之后取出刚玉管口的产物，获得在基底表面生长的磷化亚铜二维薄膜。
2.根据权利要求1所述的一种光探测器件的制备方法，其特征在于：通过掩膜法在磷化亚铜表面沉积银电极，具体为：首先抽真空，当腔体真空度低于10pa时，将衬底加热至150℃～350℃；待真空计示数低于4.0×10-3Pa时，开始蒸镀银薄膜；通过调节蒸发电流来控制蒸发速率，蒸发速率调节于1.8-2.2A/s；当薄膜厚度增长至200～500纳米时，停止蒸镀，待其冷却至室温时，获得器件。
3.根据权利要求1所述的一种光探测器件的制备方法，其特征在于：所述的基底为玻璃基底，玻璃基底尺寸为20mm×5mm×1mm尺寸大小。
4.根据权利要求1所述的一种光探测器件的制备方法，其特征在于：所述的刚玉管直径为1英寸且抽真空的装置带尾气净化设备。
5.根据权利要求1所述的一种光探测器件的制备方法，其特征在于：所述的有氧化层的硅片尺寸为(2.5～3.5)cm×(1.5～2.0)cm。
6.根据权利要求1所述的一种光探测器件的制备方法，其特征在于：所述的刚玉舟尺寸为0.8cm×0.6cm×6cm。
7.根据权利要求1所述的一种光探测器件的制备方法，其特征在于：刚玉管口倾斜角度为45°。
8.根据权利要求1或2所述的一种光探测器件的制备方法，其特征在于：所述的磷化亚铜二维薄膜的厚度为2-10nm。
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