CN114141684A - 晶圆旋转装置及化学气相沉积设备 - Google Patents

晶圆旋转装置及化学气相沉积设备 Download PDF

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CN114141684A
CN114141684A CN202111427199.2A CN202111427199A CN114141684A CN 114141684 A CN114141684 A CN 114141684A CN 202111427199 A CN202111427199 A CN 202111427199A CN 114141684 A CN114141684 A CN 114141684A
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王会会
刘洋
金補哲
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SGS Ningbo Semiconductor Technology Co Ltd
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Abstract

本发明公开了一种晶圆旋转装置及化学气相沉积设备,所述包括静电吸盘、反应腔体、晶圆支撑架，所述静电吸盘通过三个提升销与晶圆支撑架连接，静电吸盘依据静电原理吸引晶圆片；所述反应腔体左侧接入反应气体管道并配有压力计，底部连接尾气管路，配有压力计，并通过节流阀连接于涡轮泵上；所述反应腔体顶部连接远程等离子体源，中间为清洁气体管路，清洁气体管路穿过陶瓷钟罩，且尾部接有喷头；所述晶圆支撑架底部与反应腔体密封连接。本发明在于不仅可以对晶圆进行升降动作，还可以通过驱动马达来对晶圆进行旋转作业，通过旋转晶圆来达到改善工艺均匀性的目的，进而提高了产品良率。

Description

晶圆旋转装置及化学气相沉积设备
技术领域
本发明涉及化学气相沉积设备技术领域，具体为一种晶圆旋转装置及化学气相沉积设备。
背景技术
化学气相沉积(CVD)是指化学气体或蒸汽在基质表面反应合成涂层或纳米材料的方法，是半导体工业中应用最为广泛的用来沉积多种材料的技术，包括大范围的绝缘材料，大多数金属材料和金属合金材料。从理论上来说，它是很简单的：两种或两种以上的气态原材料导入到一个反应室内，然后他们相互之间发生化学反应，形成一种新的材料，沉积到晶片表面上。
在当化学气相沉积工艺厚度、电阻出现问题时，一般地，会在工艺气体流量，工艺温度，工艺时间等方面进行探讨，此外，一旦工艺参数均匀性出现异常，就没有有效的方法来控制其的偏差，本发明提供一种晶圆旋转装置及化学气相沉积设备。
发明内容
本发明的目的在于提供一种晶圆旋转装置及化学气相沉积设备，以解决上述背景技术中提出的在当化学气相沉积工艺厚度、电阻出现问题时，一旦工艺参数均匀性出现异常，没法控制其的偏差的问题。
为实现上述目的，本发明提供如下技术方案：
一种晶圆旋转装置及化学气相沉积设备，所述包括静电吸盘、反应腔体、晶圆支撑架，所述静电吸盘通过三个提升销与晶圆支撑架连接，静电吸盘依据静电原理吸引晶圆片；所述反应腔体左侧接入反应气体管道并配有压力计，底部连接尾气管路，配有压力计，并通过节流阀连接于涡轮泵上；所述反应腔体顶部连接远程等离子体源，中间为清洁气体管路，清洁气体管路穿过陶瓷钟罩，与气体喷淋头组件连接。所述晶圆支撑架底部与反应腔体密封连接，所述晶圆旋转装置由波纹管腔体、马达和气缸组成，所述波纹管腔体的顶部固定有锁紧装置，并与反应腔体密封连接，所述波纹管腔体的两侧分别设有密封管路和高纯氮气管路，所述马达和气缸均通过螺丝固定于波纹管腔体上，所述波纹管腔体内部设有轴杆，所述波纹管腔体的底部设有第二传动轮，所述第二传动轮与轴杆焊接固定，所述马达的传动端上连接有第一传动轮，所述第一传动轮和第二传动轮之间通过皮带连接，所述气缸上设有传感器和气体传输口。
作为本发明的一种优选实施方式，所述波纹管腔体为金属真空波纹管，能承受较多循环次数的变动载荷和较大位移的条件下工作，在最大位移情况下寿命可达到30000次。
作为本发明的一种优选实施方式，所述节流阀是一种可通过调节其阀门开度大小进而控制反应腔体压力的阀门。
作为本发明的一种优选实施方式，所述远程等离子体源的射频发生器最大频率13.56MHz、最大功率300W且可调节。
作为本发明的一种优选实施方式，所述晶圆支撑架为三个手臂的陶瓷组件，可通过其三个手臂将同为陶瓷材质的提升销升起并托住晶圆片提升至待工艺位置。
与现有技术相比，本发明的有益效果是：
本发明在于不仅仅可以对晶圆进行升降动作，还可以通过驱动马达来对晶圆进行旋转作业，可以在晶圆膜厚，电阻均匀性出现偏差时，通过旋转晶圆来达到改善工艺均匀性的目的，进而提高了产品良率。
附图说明
图1为本发明实施例的整体结构示意图；
图2为本发明的底板晶圆旋转装置局部外观结构示意图；
图3为本发明的底板晶圆旋转装置结构示意图。
图中：1-静电吸盘，2-反应腔体，3-晶圆支撑架，4-提升销，5-晶圆片，6-反应气体管路，7-压力计，8-尾气管路，9-压力计，10-节流阀，11-涡轮泵，12-远程等离子体源，13-清洁气体管路，14-陶瓷钟罩，15-喷头，16-晶圆旋转装置，17-波纹管腔体，18-马达，19-气缸，20-锁紧装置，21-轴杆，22-第二传动轮，23-第一传动轮，24-传感器，25-气体传输口，26-高纯氮气管路，27-密封管路。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
实施例一
请参阅图1-3，本发明提供一种技术方案：
一种晶圆旋转装置及化学气相沉积设备，其所涉及的结构包括静电吸盘1、反应腔体2、晶圆支撑架3，晶圆旋转装置16，静电吸盘1依据静电作用吸引晶圆片5；反应腔体2左侧连接反应气体管路6，且配置有压力计7；反应腔体底部连接尾气管路8，管路上配置压力计9和节流阀10，并最终连接涡轮泵；陶瓷钟罩14提供反应环境，且其顶部开孔并经过清洁气体管路13连接远程等离子体源12，清洁气体管路13底部连接有喷头15；静电吸盘1内部设有晶圆支撑架3，且支撑架底部与波纹管腔体17的轴杆21于底部连接；晶圆旋转装置16由波纹管腔体17、马达18和气缸19组成，波纹管腔体17的顶部固定有锁紧装置20，波纹管腔体17的两侧分别设有密封管路26和高纯氮气管路27，马达18和气缸19均通过螺丝固定于波纹管腔体17上，波纹管腔体17内部设有轴杆21，波纹管腔体17的底部设有第二传动轮22，第二传动轮22与轴杆21焊接固定，马达18的传动端上连接有第一传动轮23，第一传动轮23和第二传动轮22之间通过带体连接，气缸19上设有传感器24和气体传输口25。本发明通过晶圆旋转装置的添加，实现对晶圆升降、旋转的调节，此结构可以在晶圆膜厚，电阻均匀性出现偏差时，通过旋转晶圆来达到改善工艺均匀性的目的，进而提高了产品良率，本发明中涉及的气缸19为升降气缸，其型号为DNC-40-25-PPV-A；马达18的型号为57SM110；气缸19的传感器为红外线传感器，其型号为ZPCG。
锁紧装置20为圆形连接座，锁紧装置20与反应腔体2锁紧固定，锁紧装置20上嵌合有橡胶密封圈，更好的与腔体连接，防止气体泄漏。
进一步改进地，波纹管腔体17为金属真空波纹管，能承受较多循环次数的变动载荷和较大位移的条件下工作，在最大位移情况下寿命可达到30000次以上。
进一步改进地，节流阀10是一种可通过调节其阀门开度大小进而控制反应腔体压力的阀门。
进一步改进地，远程等离子体源12的射频发生器最大频率13.56MHz、最大功率300W且可调节。
具体地，晶圆支撑架3为三个手臂的陶瓷组件，可通过其三个手臂将同为陶瓷材质的提升销4升起并托住晶圆片提升至待工艺位置。
综合上述，根据图3所示，锁紧装置20通过密封圈与反应腔体2底部的密封连接，左边为马达18，右边为气缸19。其中，马达18底部的第一传动轮23与波纹管腔体17的第二传动轮22通过带体连接，以驱动旋转装置本体的轴杆21转动，气缸19与晶圆支撑架3的升降端固定连接，通过传感器24的反应信号来判定支撑架的上升和下降，以上所有动作的完成通过外置的控制电路来给与指令，并完成动作反馈给控制面板，达到执行控制的目的，具体工作流程如下：
1)当晶圆片5传送到反应腔体2之前，本晶圆装置将开始升降作业，通过传感器24来进行监测，气缸19通入气体，气缸19将带动晶圆支撑架3上升至预加工位置；待晶圆放置在提升销4上，气缸19另外一端通入气体，气缸带动支撑架3下降至工艺位置，轴杆21底部与支撑架接触并固定连接。在此，气缸19设置上升/下降时间均为3秒；
2)马达18开始通电旋转，并带动第一传动轮23转动，第一传动轮23通过皮带带动第二传动轮22转动，进而带动晶圆片5转动，马达18设置转速为36转/分钟；
3)待晶圆加工工艺时间结束，马达18断电并停止旋转，气缸19通入气体，将带动晶圆支撑架3上升，晶圆支撑架3通过提升销4将晶圆片5提升至工艺完成位置。至此，工艺结束；
4)在整个晶圆片工艺过程中，密封管路27通过干泵不断做抽真空动作，以确保波纹管腔体17与反应腔体2的真空度达到标准值，高纯氮气管路26会不断的往波纹管腔体17中通入高纯氮气，以保证排除反应气体和清洁气体。
实施例二
传统的晶圆加工，原理是在低气压下，利用低温等离子体在工艺腔体的阴极上，即晶圆放置的加热平板上，使晶圆升温到预定的温度，然后通入适量的工艺气体，这些气体经一系列化学反应和等离子体反应，最终在晶圆表面形成固态薄膜，在反应过程中，反应气体从进气口进入反应室，逐渐扩散至样品表面，在射频源激发的电场作用下，反应气体分解成电子、离子和活性基团等。这些分解物发生化学反应，生成膜的初始成分和副反应物，这些生成物以化学键的形式吸附到样品表面，生成固态膜的晶核，晶核逐渐生长成岛状物，岛状物继续生长成连续的薄膜，在薄膜生长过程中，各种副产物从膜的表面逐渐脱离，在真空泵的作用下从出口排出。
实施例一采用旋转、升降结构的晶圆旋转装置后，通过驱动马达来对晶圆进行旋转作业，在晶圆膜厚，电阻均匀性出现偏差时，可以通过旋转晶圆来达到改善工艺均匀性的目的，实施例二为传统的晶圆加工方式，此方式主要通过RF功率发生器来对气体产生电离的效果，当RF功率发生器出现异常时，由于RF功率发生器都是直接固定于气腔上，位置不能移动，从而导致气体在晶圆上附着不均匀的现象，因此，实施例一对实施例二进行优化，弥补实施例二的不足，从而达到最佳的效果。
尽管已经示出和描述了本发明的实施例，对于本领域的普通技术人员而言，可以理解在不脱离本发明的原理和精神的情况下可以对这些实施例进行多种变化、修改、替换和变型，本发明的范围由所附权利要求及其等同物限定。

Claims (5)

1.一种晶圆旋转装置及化学气相沉积设备,其特征在于：所述包括静电吸盘(1)、反应腔体(2)、晶圆支撑架(3)，所述静电吸盘(1)通过三个提升销(4)与晶圆支撑架(3)连接，所述静电吸盘(1)吸引晶圆片(5)附着于上面；所述反应腔体(2)左侧接入有反应气体管道(6)并配有压力计(7)且底部连接有尾气管路(8)并配有压力计(9)，所述反应腔体(2)上还连接有节流阀(10)并通过节流阀(10)连接于涡轮泵(11)上；所述反应腔体(2)顶部连接远程等离子体源(12)且中间为清洁气体管路(13)，清洁气体管路(13)穿过陶瓷钟罩(14)且尾部接有喷头(15)；所述晶圆旋转装置(16)顶部与反应腔体(2)密封连接，且所述晶圆支撑架(3)底部嵌入晶圆旋转装置(16)中，所述晶圆支撑架(3)的三个手臂分别嵌入一个提升销(4)；
所述晶圆旋转装置(16)由波纹管腔体(17)、马达(18)和气缸(19)组成；所述波纹管腔体(17)的顶部固定有锁紧装置(20)，所述波纹管腔体(17)的两侧分别设有密封管路(27)和高纯氮气管路(26)；所述马达(18)和气缸(19)均通过螺丝固定于波纹管腔体(17)上；所述波纹管腔体(17)内部设有轴杆(21)；所述波纹管腔体(17)的底部设有第二传动轮(22)，所述第二传动轮(22)与轴杆(21)焊接固定；所述马达(18)的传动端上连接有第一传动轮(23)，所述第一传动轮(23)和第二传动轮(22)之间通过带体连接，所述气缸(19)上设有传感器(24)和气体传输口(25)。
2.根据权利要求1所述的一种晶圆旋转装置及化学气相沉积设备，其特征在于：所述波纹管腔体(17)为金属真空波纹管，能承受较多循环次数的变动载荷和较大位移的条件下工作，在最大位移情况下寿命可达到30000次。
3.根据权利要求1所述的一种晶圆旋转装置及化学气相沉积设备，其特征在于：所述节流阀(10)是一种可通过调节其阀门开度大小进而控制反应腔体(2)压力的阀门。
4.根据权利要求1所述的一种晶圆旋转装置及化学气相沉积设备，其特征在于：所述远程等离子体源(12)的射频发生器最大频率13.56MHz、最大功率300W且可调节。
5.根据权利要求1所述的一种晶圆旋转装置及化学气相沉积设备，其特征在于：所述晶圆支撑架(3)为三个手臂的陶瓷组件，可通过其三个手臂将同为陶瓷材质的提升销(4)升起并托住晶圆片(5)提升至待工艺位置。
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114959660A (zh) * 2022-06-01 2022-08-30 江苏邑文微电子科技有限公司 一种pecvd反应装置
CN116479411A (zh) * 2023-04-27 2023-07-25 大连皓宇电子科技有限公司 一种化学气相沉积设备用的多工位硅片搬运装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114959660A (zh) * 2022-06-01 2022-08-30 江苏邑文微电子科技有限公司 一种pecvd反应装置
CN116479411A (zh) * 2023-04-27 2023-07-25 大连皓宇电子科技有限公司 一种化学气相沉积设备用的多工位硅片搬运装置
CN116479411B (zh) * 2023-04-27 2024-03-12 大连皓宇电子科技有限公司 一种化学气相沉积设备用的多工位硅片搬运装置

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