CN114107986A - 一种混合集成电路外壳引线局部镀金工艺 - Google Patents

一种混合集成电路外壳引线局部镀金工艺 Download PDF

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CN114107986A
CN114107986A CN202111389197.9A CN202111389197A CN114107986A CN 114107986 A CN114107986 A CN 114107986A CN 202111389197 A CN202111389197 A CN 202111389197A CN 114107986 A CN114107986 A CN 114107986A
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lead
shell
integrated circuit
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plating
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郭志平
严庆
许乐
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Shenzhen Honggang Mechanism & Equipment Co ltd
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Abstract

本申请涉及一种混合集成电路外壳引线局部镀金工艺，属于局部镀金的领域，其包括以下步骤：S100：浸煮除污，混合集成电路的壳体和引线放入除污溶液中浸煮；S200：电解除油，壳体和引线放置进入电解溶液中电解；S300：酸性活化，去除壳体和引线表面的氧化层；S400：预镀镍；S500：镀薄金；S600：局部镀金，用于悬挂壳体和引线的挂具包括通电区和绝缘区，引线通过电镀挂线与挂具的通电区连接，壳体通过电镀挂线与挂具的绝缘区连接，并再次放入镀金溶液进行镀金。本申请具有减少工艺成本的效果。

Description

一种混合集成电路外壳引线局部镀金工艺
技术领域
本申请涉及局部镀金的领域，尤其是涉及一种混合集成电路外壳引线局部镀金工艺。
背景技术
混合集成电路是由半导体集成工艺与薄膜工艺结合而制成的集成电路。混合集成电路是在基片上用成膜方法制作厚膜或薄膜元件及其互连线，并在同一基片上将分立的半导体芯片、单片集成电路或微型元件混合组装，再外加封装而成。
混合集成电路通常采用整体镀镍镀金，其中镀镍为了防腐蚀，镀金则主要是保证引线的键合强度和可焊性。
针对上述中的相关技术，发明人认为对于混合集成电路来说，引线需要镀镍后再镀金，而壳体则无需镀金，整体镀金的工艺导致成本很高。
发明内容
为了减少工艺成本，本申请提供一种混合集成电路外壳引线局部镀金工艺。
本申请提供的一种混合集成电路外壳引线局部镀金工艺采用如下的技术方案：
一种混合集成电路外壳引线局部镀金工艺，包括以下步骤：
S100：浸煮除污，混合集成电路的壳体和引线放入除污溶液中浸煮；
S200：电解除油，壳体和引线放置进入电解溶液中电解；
S300：酸性活化，去除壳体和引线表面的氧化层；
S400：预镀镍；
S500：镀薄金；
S600：局部镀金，用于悬挂壳体和引线的挂具包括通电区和绝缘区，引线通过电镀挂线与挂具的通电区连接，壳体通过电镀挂线与挂具的绝缘区连接，并再次放入镀金溶液进行镀金。
通过采用上述技术方案，壳体和引线除污去油，并整体镀镍，随后将壳体和引线分别通过电镀挂线连接挂具的绝缘区和通电区，使壳体外部不会通电镀金，而引线则通电镀金，其中，壳体上镀覆的薄金层使壳体上的镍层不会在镀金溶液中被置换出来，使得镍层不会被破坏，镀金溶液不会被污染，由此提高镀金质量，并且引线能够单独镀金无需更换挂具，简化局部镀金工艺，减少镀金成本。
可选的，所述S100中，除污溶液为铁氰化钾溶液。
通过采用上述技术方案，引线通过玻璃绝缘子与壳体连接，将壳体、引线和玻璃绝缘子置入铁氰化钾溶液中，经过浸煮，去除壳体、引线和玻璃绝缘子上的油污，并且保持玻璃绝缘子的绝缘电阻不下降。
可选的，所述S200中，壳体和引线电解完成后，依次使用自来水和去离子水清洗。
可选的，所述S300中，酸洗活化包括依次经过的硫酸活化和盐酸活化，其中硫酸活化采用10％硫酸溶液，盐酸活化采用50％盐酸溶液。
通过采用上述技术方案，硫酸溶液和盐酸溶液去除壳体和引线外部的氧化层和杂质，其中硫酸溶液不易挥发，充分将壳体和引线表面的污垢清除，随后盐酸溶液清洗壳体和引线，盐酸溶液易于挥发，在壳体和引线表面清理后，表面基本没有残留，提高后续步骤的工艺质量。
可选的，所述S400中，壳体和引线顺序放入氨基磺酸镍溶液、化学镍溶液和氨基磺酸镍溶液中，依次进行电镀镍、化学镀镍和电镀镍。
通过采用上述技术方案，依次进行的电镀镍、化学镀镍和电镀镍增加镍层的稳定性，减少镍层被破坏的可能。
可选的，所述S500中，壳体和引线同时放入镀金溶液中电沉积10-15s，金层厚度在0.06-0.1μm。
通过采用上述技术方案，在壳体和引线外侧镀覆薄金层，预防壳体通电导致外侧镍层退镀，提高镀层的稳定，并使镀层不被破坏。
可选的，所述S600中，引线上镀金厚度大于1.27μm。
可选的，S700：断开引线，移动壳体电镀挂线连接通电区，依次进行电解除油、盐酸活化和镀镍；
S800：镀层强度测试，盐雾测试48小时。
通过采用上述技术方案，壳体再次镀镍，将壳体镀层强度达到盐雾测试要求。
综上所述，本申请包括以下至少一种有益技术效果：
1.通过局部镀金工艺，减少混合集成电路镀金的成本；
2.通过对挂具分为绝缘区和通电区，使壳体不会通电镀金，引线则通电镀金，无需更换挂具，简化镀金工艺。
附图说明
图1是本申请实施例中工艺流程图。
具体实施方式
以下结合附图1对本申请作进一步详细说明。
本申请实施例公开一种混合集成电路外壳引线局部镀金工艺。参照图1，混合集成电路外壳引线局部镀金工艺包括以下步骤：
在壳体和引线镀金之间，壳体与引线之间需要封装成一体，其中，引线一端穿过壳体，并且在壳体和引线之间设置玻璃绝缘子，玻璃绝缘子同时与壳体和引线固定连接。
S100：浸煮除污，混合集成电路的壳体和引线放入铁氰化钾溶液中，加热浸煮，从而清理壳体、引线和玻璃绝缘子上的油污，并且减少由此而导致玻璃绝缘子的绝缘电阻下降的可能。
S200：电解除油，将壳体和引线放入电解溶液中，电解30s，然后依次通过自来水和去离子水清洗。
S300：酸性活化，壳体和引线整体放置进入10％硫酸溶液中，持续20s，进行硫酸活化，随后将壳体和引线整体放置进入50％盐酸溶液中，持续15s，进行盐酸活化，最后去离子水清洗。
S400：预镀镍，包括电镀镍、化学镀镍和电镀镍。
壳体和引线经过酸性活化后，壳体与引线顺序放置到氨基磺酸镍溶液、化学镍溶液和氨基磺酸镍溶液中，从而顺序进行电沉积镀镍、化学镀镍和电沉积镀镍，镍层厚度1μm。
S500：镀薄金，壳体和引线整体放入镀金溶液中，电沉积10s，金层厚度为0.06μm。
S600：局部镀金。
壳体和引线在镀金过程中，需要使用挂具吊装并悬浮在镀金溶液中，其中挂具包括通电区和绝缘区，引线通过电镀挂线与挂具的通电区连接，壳体通过电镀挂线与挂具的绝缘区连接，从而使壳体和引线同时被吊装浸入镀金溶液中。
其中，引线与挂具的通电区连接通电，从而在镀金溶液中镀覆金层，壳体则与挂具的绝缘区连接，并未通入电流，同时引线和壳体之间的玻璃绝缘子使得电流无法连通到壳体上，由此壳体并未电镀镀金，使得引线镀金而壳体不镀金，引线上镀金厚度大于1.27μm。
S700：壳体镀镍，断开引线，移动壳体电镀挂线连接通电区，依次进行电解除油、盐酸活化和镀镍；
S800：镀层强度测试，盐雾测试48小时。
在壳体上再次镀镍，提高壳体的防腐蚀性，直至镍层到达盐雾测试要求。
以上均为本申请的较佳实施例，并非依此限制本申请的保护范围，故：凡依本申请的结构、形状、原理所做的等效变化，均应涵盖于本申请的保护范围之内。

Claims (8)

1.一种混合集成电路外壳引线局部镀金工艺，其特征在于：包括以下步骤：
S100：浸煮除污，混合集成电路的壳体和引线放入除污溶液中浸煮；
S200：电解除油，壳体和引线放置进入电解溶液中电解；
S300：酸性活化，去除壳体和引线表面的氧化层；
S400：预镀镍；
S500：镀薄金；
S600：局部镀金，用于悬挂壳体和引线的挂具包括通电区和绝缘区，引线通过电镀挂线与挂具的通电区连接，壳体通过电镀挂线与挂具的绝缘区连接，并再次放入镀金溶液进行镀金。
2.根据权利要求1所述的一种混合集成电路外壳引线局部镀金工艺，其特征在于：所述S100中，除污溶液为铁氰化钾溶液。
3.根据权利要求1所述的一种混合集成电路外壳引线局部镀金工艺，其特征在于：所述S200中，壳体和引线电解完成后，依次使用自来水和去离子水清洗。
4.根据权利要求1所述的一种混合集成电路外壳引线局部镀金工艺，其特征在于：所述S300中，酸洗活化包括依次经过的硫酸活化和盐酸活化，其中硫酸活化采用10％硫酸溶液，盐酸活化采用50％盐酸溶液。
5.根据权利要求1所述的一种混合集成电路外壳引线局部镀金工艺，其特征在于：所述S400中，壳体和引线顺序放入氨基磺酸镍溶液、化学镍溶液和氨基磺酸镍溶液中，依次进行电镀镍、化学镀镍和电镀镍。
6.根据权利要求1所述的一种混合集成电路外壳引线局部镀金工艺，其特征在于：所述S500中，壳体和引线同时放入镀金溶液中电沉积10-15s，金层厚度在0.06-0.1μm。
7.根据权利要求1所述的一种混合集成电路外壳引线局部镀金工艺，其特征在于：所述S600中，引线上镀金厚度大于1.27μm。
8.根据权利要求1所述的一种混合集成电路外壳引线局部镀金工艺，其特征在于：还包括以下步骤：
S700：断开引线，移动壳体电镀挂线连接通电区，依次进行电解除油、盐酸活化和镀镍；
S800：镀层强度测试，盐雾测试48小时。
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