CN114093785A - Substrate structure for monitoring micro-etching risk and monitoring method - Google Patents
Substrate structure for monitoring micro-etching risk and monitoring method Download PDFInfo
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- CN114093785A CN114093785A CN202210019520.1A CN202210019520A CN114093785A CN 114093785 A CN114093785 A CN 114093785A CN 202210019520 A CN202210019520 A CN 202210019520A CN 114093785 A CN114093785 A CN 114093785A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/041—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
Abstract
The invention provides a substrate structure for monitoring a micro-etching risk and a monitoring method. The first material layer in the substrate structure has lower resistivity relative to the second material layer, so that when the first material layer is exposed in advance due to the occurrence of the micro-etching defect, the resistance of the substrate structure can be detected in time due to the fact that the resistance of the substrate structure changes suddenly in advance, and thus the micro-etching defect caused by the micro-etching phenomenon in the current etching process can be detected effectively in time, and whether the correspondingly adopted etching equipment is abnormal can be further judged.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a substrate structure for monitoring micro-etching risks and a monitoring method.
Background
In semiconductor processing, an etching process is usually performed by using an etching device to realize a patterning process of a film layer, so that when the etching device is abnormal, deviation of the etching process is directly or indirectly caused, and the etching precision is further influenced. For this reason, the etching process or the etching apparatus needs to be monitored to ensure the etching stability.
Currently, a corresponding test key is generally arranged on a processing substrate or monitored by inspecting the processing substrate, however, these monitoring methods can only detect a large defect generated by etching, and it is difficult to detect a micro-etching defect. For example, when a groove is formed by an etching process, a micro trench (micro trench) is easily generated at a bottom corner of the groove due to a micro etching phenomenon, and the micro trench is difficult to be detected in a current process in time and cannot be found in a later process of a product (for example, cannot be found until a final yield test of the product), at this time, a large number of processing substrates are already processed in an unstable etching process, and the influence range is large. Particularly, when the design size of the etched groove is large, the micro-etching phenomenon is more serious, and even the groove is short-circuited with the front layer metal, so that the product is directly scrapped.
Disclosure of Invention
The invention aims to provide a method for monitoring the micro-etching risk, which is used for effectively detecting whether the micro-etching phenomenon exists in the current etching process in time.
In order to solve the technical problem, the invention provides a method for monitoring the risk of microetching, which comprises the following steps: providing a substrate structure, wherein the substrate structure comprises a first material layer and a second material layer which are stacked from bottom to top, and the resistivity of the second material layer is higher than that of the first material layer; etching the second material layer to at least a first time point to form a groove in the second material layer; and judging whether the sudden change of the resistance of the substrate structure is detected before the first time point so as to deduce whether the micro-etching defect occurs.
Optionally, the second material layer is an insulating material layer, and the first material layer is a conductive material layer.
Optionally, a portion of the second material layer corresponding to the inside of the groove is completely etched and removed at a second time point, where the first time point is earlier than the second time point.
Optionally, the first time point is: and the time point corresponding to the time point when the part of the second material layer in the groove is completely etched and removed.
Optionally, the method for determining whether abrupt change of the resistance of the substrate structure is detected before the first time point to deduce whether micro etching defect occurs includes: and if the resistance is detected to have sudden change before the first time point, judging that the bottom corner position of the groove has a micro-etching defect and exposing the first material layer.
Optionally, if the substrate structure is not detected to have sudden change in resistance before the first time point, continuing to etch the second material layer until the substrate structure is detected to have sudden change in resistance; judging whether the time node of the sudden change of the resistance is earlier than the second time point; if so, deducing that the current etching process has a micro-etching risk.
Optionally, the second material layer is etched by using an etching device, and whether the etching device is abnormal or not is inferred according to whether the resistance of the substrate structure detected before the first time point changes suddenly or not.
Optionally, if the substrate structure is not detected to have sudden change in resistance before the first time point, continuing to etch the second material layer by using the etching device until the substrate structure is detected to have sudden change in resistance; judging whether the time node of the sudden change of the resistance is earlier than a second time point; if so, judging that the etching equipment is risk equipment; if not, judging that the equipment is not abnormal. Wherein the part of the second material layer corresponding to the groove is completely etched and removed at a second time point, and the first time point is earlier than the second time point
Optionally, the width dimension of the groove is greater than or equal to 25 nm.
It is yet another object of the present invention to provide a substrate structure for monitoring risk of microetching, comprising: the material comprises a first material layer and a second material layer which are stacked from bottom to top, wherein the resistivity of the second material layer is higher than that of the first material layer. The first material layer is used for etching the first material layer in the monitoring process to form a groove; and when the etching reaches the first time point, judging whether the micro-etching defect occurs in the formed groove or not according to whether the resistance of the substrate structure is detected to generate mutation before the first time point.
In the method for monitoring the risk of the microetching, provided by the invention, in the substrate structure for monitoring the risk of the microetching, the first material layer at the lower layer has lower resistivity relative to the second material layer at the upper layer, so that when the first material layer is exposed in advance due to the occurrence of the microetching defect, the resistance of the substrate structure is subjected to larger sudden change before the first time point, and the substrate structure is easy to detect in time. Therefore, whether the micro-etching phenomenon exists in the current etching process or not can be timely and effectively detected to cause the micro-etching defect, and the abnormal equipment can be monitored in real time, so that the operation of the abnormal equipment can be stopped at the first time, the abnormal equipment can be checked and maintained, the subsequent processing substrate can not enter the abnormal equipment, more products are prevented from being influenced by potential micro-etching risks (scrapped if short circuit is caused), and the potential product scrapping risks (up to thousands of sheets) can be greatly reduced.
Drawings
FIG. 1 is a schematic structural diagram of a micro-etching phenomenon occurring at a delivery position of a groove.
Fig. 2 is a schematic flow chart of a method for monitoring a risk of microetching according to an embodiment of the present invention.
Fig. 3 is a schematic diagram of a substrate structure corresponding to a micro-etching defect detected in a monitoring process according to an embodiment of the invention.
Fig. 4 is a schematic diagram of a substrate structure corresponding to a monitoring method in an embodiment of the invention when a potential risk of microetching is detected in a monitoring process.
Fig. 5 is a schematic view of a substrate structure corresponding to the monitoring method in an embodiment of the present invention when detecting that there is no risk of micro etching in the monitoring process.
Fig. 6 is a comparison diagram of monitoring results corresponding to different conditions of the etching apparatus monitored by the monitoring method in an embodiment of the present invention.
Wherein the reference numbers are as follows: 100-a first material layer; 200-a second material layer; 210-a groove; 220-micro grooves.
Detailed Description
As described in the background art, there is no real-time and effective monitoring method for the risk of micro etching in the etching process, and products with micro etching defects can not be found until the post-processing of the product manufacturing, and a large number of products are exposed to the potential risk of micro etching, so that a large number of products may need to be directly scrapped due to serious micro etching defects.
Referring to fig. 1, for example, the micro-etching phenomenon can be referred to, and generally speaking, when performing groove etching, the bottom corner position of the groove is more likely to generate micro-etching (for example, the part indicated by a dashed line box in fig. 1) due to charge adsorption and accumulation of etching derivatives (polymers). That is, the etching rate of the bottom corner position of the groove is higher than that of the middle region of the groove, so that the bottom corner position can reach deeper regions faster, and then can be easily connected with the lower film layer (for example, can easily reach the lower metal layer), resulting in abnormal performance of the formed product.
In view of the above technical problems, the present invention provides a method for monitoring a risk of microetching, which is used for monitoring a current etching process to timely and effectively capture whether the risk of microetching exists in the current etching process.
Specifically, the monitoring method may include the following steps. Firstly, a substrate structure is provided, the substrate structure comprises a first material layer and a second material layer which are stacked from bottom to top, and the resistivity of the second material layer is higher than that of the first material layer. Then, the second material layer is etched to at least a first time point so as to form a groove in the second material layer. And then, judging whether the micro-etching phenomenon occurs or not according to whether sudden change of the resistance is detected before the first time point.
That is, in the monitoring method provided by the present invention, the first material layer of the lower layer has a lower resistivity than the second material layer of the upper layer, so that when the groove is formed by etching, if the bottom corner of the groove is micro-etched, the formed micro-etched trench will expose the first material layer of the lower layer earlier than the first time point, and when the first material layer is exposed, the resistance of the substrate structure will be suddenly changed. Therefore, the micro-etching defects can be sensitively captured, and whether the micro-etching risk exists in the current etching process or not can be timely detected.
The method for monitoring the risk of microetching and the substrate structure for monitoring the risk of microetching proposed by the present invention will be described in further detail with reference to fig. 2 to 6 and specific examples. Fig. 2 is a schematic flow chart of a method for monitoring a risk of microetching according to an embodiment of the present invention; FIG. 3 is a schematic diagram of a substrate structure corresponding to a micro-etching defect detected during a monitoring process according to an embodiment of the present invention; FIG. 4 is a schematic diagram of a substrate structure corresponding to a monitoring method in an embodiment of the present invention when a potential risk of microetching is detected during a monitoring process; fig. 5 is a schematic view of a substrate structure corresponding to the monitoring method in an embodiment of the present invention when detecting that there is no risk of micro etching in the monitoring process.
The advantages and features of the present invention will become more apparent from the following description. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is provided solely for the purpose of facilitating and distinctly claiming the embodiments of the present invention. And relative terms such as "above," "below," "top," "bottom," "above," and "below" as may be used in the figures, may be used to describe various elements' relationships to each other. These relative terms are intended to encompass different orientations of the elements in addition to the orientation depicted in the figures. For example, if the device were inverted relative to the view in the drawings, an element described as "above" another element, for example, would now be below that element.
Referring to fig. 2 and fig. 3 to 5, the monitoring method provided in this embodiment includes: a substrate structure is provided. The substrate structure comprises a first material layer 100 and a second material layer 200 which are stacked from bottom to top, wherein the resistivity of the second material layer 200 is higher than that of the first material layer 100. In this embodiment, the second material layer 200 may specifically be an insulating material layer, and the first material layer 100 may be a conductive material layer. For example, the material of the second material layer 200 includes silicon oxide, silicon nitride, silicon oxynitride, or the like; the first material layer 100 may be a metal layer, and a material of the metal layer may include at least one of gold, copper, and aluminum.
With continuing reference to fig. 2 and fig. 3-5, the method for monitoring the risk of microetching further includes: the second material layer 200 is etched to at least a first time point T1 to form a recess 210 in the second material layer 200.
The first time point T1 can be set according to the etching time required by the specific etching process in the product manufacture. Specifically, in the manufacturing process of the product, the second material layer is usually etched to a predetermined time point (or, the second material layer is etched for a predetermined time period) to form a groove meeting the depth requirement, at this time, the predetermined time point in the manufacturing process of the product can be used as the first time point T1 for monitoring the micro-etching defect, so that the manufacturing process of the product can be simulated more accurately.
In this embodiment, the portion of the second material layer 200 corresponding to the recess 210 may be completely etched away at the second time point T2, for example, and then the first time point T1 may be set to be earlier than the second time point T2.
For example, in a particular product fabrication, the recess formed by etching the second material layer to a predetermined point in time is normally stopped at the bottom of the recess in the second material layer, i.e., the depth of the recess does not reach the underlying material layer, so that the underlying material layer is not exposed. Based on this, in the present embodiment, by etching the second material layer 200 to the first time point T1, the formed groove 210 can also be made to stop in the second material layer 200 under the normal condition, so that the second material layer in the groove 210 is not consumed.
Specifically, as shown in fig. 3, 4 and 5, when the second material layer 200 is etched to the first time point T1, and when there is no risk of micro etching, the formed groove 210 is entirely recessed and stopped in the second material layer 200, and the bottom of the groove 210 is relatively flat and does not expose the first material layer 100 (for example, the first drawing in fig. 5 shows a schematic structural diagram when etching to the first time point T1). When there is a risk of microetching (particularly, when the width of the groove 210 is large, a microetching phenomenon is more likely to occur, for example, the width of the groove 210 is greater than or equal to 25nm, and more particularly, the width of the groove 210 is 25nm to 55 nm), the bottom of the central region of the formed groove 210 is stopped in the second material layer 200 without exposing the first material layer 100, and the bottom of the central region of the groove 210 is located at a first depth position, for example, whereas a bottom corner position of the groove 210 has a micro groove 220 due to the microetching phenomenon, and the micro groove 220 is further recessed into a deeper region and located at a second depth position, which is lower than the first depth position. For example, in fig. 3, the micro-etching phenomenon is severe, and thus when the etching reaches the first time node T1, the bottom corner of the groove already produces the micro-trench 220 with a greater depth, and the micro-trench 220 reaches the underlying first material layer 100; while the first drawing in fig. 4 shows the structure when etching to the first time point T1, it is shown in fig. 4 that the micro etching phenomenon is relatively slight, so that the depth of the micro trench 220 at the bottom corner of the groove at the first time point T1 is small and does not reach the underlying first material layer 100.
After etching the second material layer 200 to the first time point T1, it is determined whether the substrate structure resistance detected before the first time point T1 has sudden change, so as to deduce whether the micro etching phenomenon occurs.
Specifically, the resistivity of the first material layer 100 is lower than that of the second material layer 200, so that when the first material layer 100 is exposed from the surface of the second material layer 200, the resistance of the substrate structure can be greatly reduced, and the resistance of the substrate structure changes abruptly. When the substrate structure has a sudden change in resistance, it means that a micro-etching defect occurs at the bottom corner of the recess 210 (i.e., the micro-trench 220 is generated), and the depth of the micro-trench 210 formed at the first time point T1 reaches the first material layer 100 to expose the first material layer 100, so that it can be concluded that the current etching process has a serious micro-etching phenomenon, and the generated micro-etching defect has caused the problem that the recess 220 is connected with the lower material layer.
It can be seen that, when the etching process has a serious micro-etching phenomenon and affects the product, that is, for example, in the case shown in fig. 3, the monitoring result obtained by monitoring the etching process is represented as: the depth of the micro-trench 220 reaches the underlying first material layer 100 in advance, so that the time node at which the resistance of the substrate structure changes abruptly is earlier than the first time point T1.
And, in the case that the etching process only has a slight micro-etching phenomenon without affecting the product, that is, in the first drawing shown in fig. 4, although the micro-groove 220 is generated at the bottom corner of the groove 210, the micro-groove 220 is not connected to the first material layer 100, and the monitoring result obtained by monitoring the micro-groove is represented as: the resistance of the substrate structure does not abruptly change before the first time point T1.
In addition, when the etching process is stable and the micro-etching phenomenon does not exist, i.e. the first drawing shown in fig. 5, the monitoring result obtained by monitoring the etching process still shows that: the resistance of the substrate structure does not abruptly change before the first time point T1.
It should be noted that, in the monitoring method provided in this embodiment, for the determination node at the first time point T1, although the slight micro etching phenomenon is difficult to be detected at the first time point T1, as described above, the slight micro etching phenomenon does not affect the performance of the product, so that the product can be processed according to the normal product, and the product is prevented from being excessively discarded.
Of course, in a further aspect, it may still be possible to monitor whether there is a slight risk of microetching in the current etching process.
With continued reference to fig. 2, after the determination at the first time point T1 is completed, in a case that the resistance abrupt change does not occur before the first time point T1, the second material layer 200 may be etched continuously until the resistance abrupt change is detected. Then, judging whether the time point of the sudden change of the resistance is earlier than a second time point T2; if so, the risk of micro-etching in the current etching process can be deduced. The second time point T2 is, for example: the second material layer 200 corresponds to the point in time when the portion of the second material layer within the recess 210 is completely consumed.
Specifically, when the abrupt resistance change occurs, which means that the underlying first material layer 100 is exposed, it may be that the first material layer 100 is exposed in advance due to the micro-trench 220, and the time point of the abrupt resistance change is earlier than the second time point T2; alternatively, it is also possible that under normal etching conditions, the second material layer is entirely consumed in the recess 210, so that the first material layer 100 is exposed, and the time point of the abrupt resistance change coincides with or approximately coincides with the predetermined second time point T2.
For example, referring to the first drawing of fig. 4, after a first time point T1, a slight micro-groove 220 appears at the bottom corner of the recess 210, the micro-groove 220 not exposing the first material layer 100; referring next to the second drawing of fig. 4, as the etching proceeds, the micro-trench 220 will reach the first material layer 100 earlier, so that the resistance jump occurs before the second time point T2.
Fig. 5 illustrates the corresponding etching process without the risk of microetching, that is: at a first time point T1 (corresponding to the first drawing in fig. 5), the bottom of the groove 210 is depressed relatively flat to a predetermined depth; between the first time point T1 and the second time point T2 (corresponding to the second drawing in fig. 5), the bottom of the groove 210 still sinks relatively flat without exposing the first material layer; until a second time point T2 (corresponding to the third drawing in fig. 5), the second material layer in the groove 210 is completely consumed, thereby exposing the first material layer 100.
The monitoring method for the micro-etching risk can be also applied to monitoring of etching equipment, so that whether the etching equipment is abnormal or not can be detected in time, the operation of the abnormal equipment can be stopped quickly, the abnormal equipment can be maintained and corrected in time, and the micro-etching risk of subsequent products caused by the abnormal equipment is avoided. That is, the monitoring method of the risk of the micro etching as described above can be expressed to some extent as an abnormality monitoring method of the etching apparatus.
Specifically, during the monitoring, the second material layer 200 may be etched by using an etching apparatus, and whether an abnormality exists in the etching apparatus is inferred according to whether a sudden change in the resistance of the substrate structure is detected before the first time point T1. When the resistance suddenly changes, the etching equipment is abnormal, and the corresponding etching process can cause micro-etching defects.
Alternatively, when the abrupt change of the resistance of the substrate structure is not detected before the first time point T1, the etching apparatus may be used to continue etching the second material layer 200 until the abrupt change of the resistance is detected. Then, judging whether the time node of the sudden change of the resistance is earlier than a second time point T2; if so, judging that the etching equipment is risk equipment; if not, judging that the equipment is not abnormal.
Fig. 6 is a comparison diagram of corresponding monitoring results of monitoring the etching equipment under different conditions by using the monitoring method in an embodiment of the invention. Specifically, as shown in fig. 6, when monitoring the risk of micro etching or monitoring the etching apparatus, the following reference may be made to the determination method.
When the time node of the substrate structure at which the resistance mutation occurs is detected to be earlier than the first time point T1, it can be determined that the etching apparatus is abnormal, and the corresponding etching process generates a micro-etching defect (i.e., a micro-trench 220), and the micro-trench 220 is connected to the underlying first material layer 100. At the moment, the abnormal equipment can be stopped to be treated, the abnormal equipment is maintained in time, and the micro-etching defect caused by the fact that subsequent processing products pass through the abnormal equipment is avoided.
When the time node of the sudden change of the resistance of the substrate structure is detected to be between the first time point T1 and the second time point T2, the etching equipment can be judged to have potential micro etching risks, but the current equipment condition can still ensure that the prepared product meets the requirements. At the moment, the risk equipment can be maintained in time, and the currently processed products of the risk equipment can be reserved according to the situation, so that transition scrapping is avoided.
When the resistance of the substrate structure does not change suddenly before the second time point T2, the etching equipment can be judged to be normal equipment, and the micro etching risk does not exist.
It should be noted that, in the monitoring method provided in this embodiment, the second time point T2 is a time point corresponding to when the portion of the second material layer 200 in the groove 210 is completely etched away, and the first time point T1 is set to be earlier than the second time point T2.
However, in other embodiments, the first time point T1 may be set as: and the time point corresponding to the time point when the part of the second material layer in the groove is completely etched and removed. At this time, when the sudden change of the resistance is detected before the first time point T1, the situation that the micro-etching defect occurs at the bottom corner position of the groove can be judged, and the etching equipment is abnormal; and before the first time point T1, the sudden change of the resistance is not detected, so that the situation that the micro-etching risk does not exist in the current etching process can be judged, and the etching equipment is not abnormal.
Based on the monitoring method, the present embodiment further provides a substrate structure for monitoring a risk of microetching, which specifically includes: the material comprises a first material layer and a second material layer which are stacked from bottom to top, wherein the resistivity of the second material layer is higher than that of the first material layer. The first material layer is used for etching the first material layer in the monitoring process to form a groove; and when the etching reaches the first time point, judging whether the micro-etching defect occurs in the formed groove or not according to whether the resistance of the substrate structure is detected to generate mutation before the first time point.
Specifically, the second material layer may be an insulating material layer, and the first material layer may be a conductive material layer. For example, the material of the second material layer includes silicon oxide, silicon nitride, silicon oxynitride, or the like; the first material layer may be a metal layer, and a material of the metal layer may include at least one of gold, copper, and aluminum. In this embodiment, the metal layer and the insulating layer with the larger difference in resistivity are respectively used as the first material layer and the second material layer, so that when the metal layer is exposed, the resistance of the substrate structure can be suddenly changed to a larger extent, and the monitoring sensitivity is improved.
In an alternative scheme, the etching of the first material layer may be specifically performed by a plasma dry etching process, and the method for detecting whether the resistance of the substrate structure changes suddenly includes, for example: it is detected whether the resistance within the etch chamber changes abruptly during the etch (it will be appreciated that exposure of the second material layer beneath the first material layer results in a sudden change in resistance within the etch chamber). In addition, the judgment method for whether the resistance has sudden change can be further deduced according to the detected change of the voltage or the current.
In summary, in the monitoring method provided in this embodiment, the first material layer has a lower resistivity than the second material layer, so that the first material layer is exposed when the micro-etching defect occurs, that is, the resistance of the substrate structure has a large degree of sudden change, and can be detected in time, so that whether the micro-etching defect is caused by the micro-etching phenomenon in the current etching process can be detected in time and effectively, and whether the correspondingly adopted etching apparatus is abnormal can be further determined.
It should be noted that, although the present invention has been described with reference to the preferred embodiments, the present invention is not limited to the embodiments. It will be apparent to those skilled in the art from this disclosure that many changes and modifications can be made, or equivalents modified, in the embodiments of the invention without departing from the scope of the invention. Therefore, any simple modification, equivalent change and modification made to the above embodiments according to the technical essence of the present invention are still within the protection scope of the technical solution of the present invention, unless the content of the technical solution of the present invention is departed from.
It is also to be understood that the terminology used herein is for the purpose of describing particular embodiments only, and is not intended to limit the scope of the present invention. It must be noted that, as used herein and in the appended claims, the singular forms "a," "an," and "the" include plural referents unless the context clearly dictates otherwise. For example, reference to "a step" or "an apparatus" means a reference to one or more steps or apparatuses and may include sub-steps as well as sub-apparatuses. All conjunctions used should be understood in the broadest sense. And, the word "or" should be understood to have the definition of a logical "or" rather than the definition of a logical "exclusive or" unless the context clearly dictates otherwise. Further, implementation of the methods and/or apparatus of embodiments of the present invention may include performing the selected task manually, automatically, or in combination.
Claims (10)
1. A method for monitoring the risk of microetching is characterized by comprising the following steps:
providing a substrate structure, wherein the substrate structure comprises a first material layer and a second material layer which are stacked from bottom to top, and the resistivity of the second material layer is higher than that of the first material layer;
etching the second material layer to at least a first time point to form a groove in the second material layer; and the number of the first and second groups,
and judging whether the sudden change of the resistance of the substrate structure is detected before the first time point so as to deduce whether the micro-etching defect occurs.
2. The method of claim 1, wherein the second material layer is an insulating material layer and the first material layer is a conductive material layer.
3. The method for monitoring the risk of microetching according to claim 1, wherein the portion of the second material layer corresponding to the inside of the recess is completely etched away at a second time point, and the first time point is earlier than the second time point.
4. The method for monitoring the risk of microetching of a semiconductor device according to claim 1, wherein the first time point is: and the time point corresponding to the time point when the part of the second material layer in the groove is completely etched and removed.
5. A method for monitoring the risk of microetching as set forth in claim 3 or 4, wherein the step of determining whether the substrate structure has a sudden change in resistance before the first time point to conclude whether the microetching defect occurs comprises:
and if the resistance is detected to have sudden change before the first time point, judging that the bottom corner position of the groove has a micro-etching defect and exposing the first material layer.
6. A method for monitoring the risk of microetching as claimed in claim 3, wherein if no sudden change in the resistance of the substrate structure is detected before the first point in time, the etching of the second material layer is continued until a sudden change in the resistance is detected;
judging whether the time node of the sudden change of the resistance is earlier than the second time point; if so, deducing that the current etching process has a micro-etching risk.
7. A method for monitoring the risk of microetching as claimed in claim 1, wherein said second material layer is etched by an etching device, and whether an abnormality exists in said etching device is inferred from whether a sudden change occurs in the resistance of the substrate structure detected before the first time point.
8. The method for monitoring the risk of microetching as recited in claim 7, wherein if the substrate structure is not detected to have an abrupt change in resistance before the first time point, continuing to etch the second material layer by using the etching apparatus until the substrate structure is detected to have an abrupt change in resistance;
judging whether the time node of the sudden change of the resistance is earlier than a second time point; if so, judging that the etching equipment is risk equipment; if not, judging that the equipment is not abnormal;
and completely etching and removing the part, corresponding to the groove, of the second material layer at a second time point, wherein the first time point is earlier than the second time point.
9. The method for monitoring the risk of microetching according to claim 1, wherein the width dimension of the groove is 25nm or more.
10. A substrate structure for monitoring risk of microetching, comprising: the material comprises a first material layer and a second material layer which are stacked from bottom to top, wherein the resistivity of the second material layer is higher than that of the first material layer;
the first material layer is used for etching the first material layer in the monitoring process to form a groove; and when the etching reaches the first time point, judging whether the micro-etching defect occurs in the formed groove or not according to whether the resistance of the substrate structure is detected to generate mutation before the first time point.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210019520.1A CN114093785B (en) | 2022-01-10 | 2022-01-10 | Substrate structure for monitoring micro-etching risk and monitoring method |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6358761B1 (en) * | 1999-09-15 | 2002-03-19 | Taiwan Semiconductor Manufacturing Company | Silicon monitor for detection of H2O2 in acid bath |
| US20030000923A1 (en) * | 2001-06-29 | 2003-01-02 | Jun-Cheng Ko | Self-aligned contact process implementing bias compensation etch endpoint detection and methods for implementing the same |
| US20040021076A1 (en) * | 2002-07-30 | 2004-02-05 | Applied Materials Israel Ltd | Contact opening metrology |
| US20180287344A1 (en) * | 2017-04-04 | 2018-10-04 | Sumitomo Electric Industries, Ltd. | Method of fabricating surface-emitting laser |
| CN110431655A (en) * | 2017-03-17 | 2019-11-08 | 东京毅力科创株式会社 | The modified control in improved surface is measured for etching |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6358761B1 (en) * | 1999-09-15 | 2002-03-19 | Taiwan Semiconductor Manufacturing Company | Silicon monitor for detection of H2O2 in acid bath |
| US20030000923A1 (en) * | 2001-06-29 | 2003-01-02 | Jun-Cheng Ko | Self-aligned contact process implementing bias compensation etch endpoint detection and methods for implementing the same |
| US20040021076A1 (en) * | 2002-07-30 | 2004-02-05 | Applied Materials Israel Ltd | Contact opening metrology |
| CN110431655A (en) * | 2017-03-17 | 2019-11-08 | 东京毅力科创株式会社 | The modified control in improved surface is measured for etching |
| US20180287344A1 (en) * | 2017-04-04 | 2018-10-04 | Sumitomo Electric Industries, Ltd. | Method of fabricating surface-emitting laser |
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