CN114038983A - Deep ultraviolet LED light source packaging structure - Google Patents

Deep ultraviolet LED light source packaging structure Download PDF

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Publication number
CN114038983A
CN114038983A CN202111361029.9A CN202111361029A CN114038983A CN 114038983 A CN114038983 A CN 114038983A CN 202111361029 A CN202111361029 A CN 202111361029A CN 114038983 A CN114038983 A CN 114038983A
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CN
China
Prior art keywords
light
deep ultraviolet
light source
ultraviolet led
emitting chip
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Pending
Application number
CN202111361029.9A
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Chinese (zh)
Inventor
黄生荣
蔡端俊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xiamen Yaoguang Semiconductor Technology Co ltd
Original Assignee
Xiamen Yaoguang Semiconductor Technology Co ltd
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Priority to CN202111361029.9A priority Critical patent/CN114038983A/en
Publication of CN114038983A publication Critical patent/CN114038983A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61NELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
    • A61N5/00Radiation therapy
    • A61N5/06Radiation therapy using light
    • A61N5/0613Apparatus adapted for a specific treatment
    • A61N5/0624Apparatus adapted for a specific treatment for eliminating microbes, germs, bacteria on or in the body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • H01L33/60Reflective elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61NELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
    • A61N5/00Radiation therapy
    • A61N5/06Radiation therapy using light
    • A61N2005/0632Constructional aspects of the apparatus
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61NELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
    • A61N5/00Radiation therapy
    • A61N5/06Radiation therapy using light
    • A61N2005/065Light sources therefor
    • A61N2005/0651Diodes
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61NELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
    • A61N5/00Radiation therapy
    • A61N5/06Radiation therapy using light
    • A61N2005/0658Radiation therapy using light characterised by the wavelength of light used
    • A61N2005/0661Radiation therapy using light characterised by the wavelength of light used ultraviolet

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Biomedical Technology (AREA)
  • Pathology (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Radiology & Medical Imaging (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Animal Behavior & Ethology (AREA)
  • General Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Veterinary Medicine (AREA)
  • Led Device Packages (AREA)
  • Apparatus For Disinfection Or Sterilisation (AREA)

Abstract

The invention provides a deep ultraviolet LED light source packaging structure which comprises an insulating substrate, a light-emitting chip, a first electrode, a second electrode and a light-gathering structure, wherein the light-emitting chip is arranged on the upper surface of the insulating substrate, the first electrode and the second electrode are respectively and electrically connected to the anode and the cathode of the light-emitting chip, the light-gathering structure is arranged on the upper surface of the insulating substrate and covers the light-emitting chip, a reflecting structure is arranged on the inner side and/or the outer side of the light-gathering structure, and the reflecting structure is used for emitting light emitted by the light-emitting chip towards the direction far away from the first surface. Borrow this setting, can gather dark ultraviolet light, greatly promote the disinfection ability of disinfecting.

Description

Deep ultraviolet LED light source packaging structure
Technical Field
The invention relates to the technical field of deep ultraviolet LED packaging, in particular to a deep ultraviolet LED light source packaging structure.
Background
Ultraviolet (UV) radiation is a generic term for radiation in the electromagnetic spectrum with wavelengths from 100nm to 400 nm. According to the wavelength, the ultraviolet light is generally divided into A, B, C three bands, wherein the UV-A is 400-315 nm, the UV-B is 315-280 nm, and the UV-C is 280-100 nm. In the UV LED market application, the most main application market of UV-A is the fields of curing, ink printing and the like, and UV-B mainly adopts medical treatment and deep ultraviolet UV-C mainly adopts sterilization and disinfection.
Light Emitting Diodes (LEDs) are becoming more and more popular in daily life and industrial use, and have gained a lot of market share with their advantages of low power consumption, fast light emitting response, high reliability, high radiation efficiency, long service life, no environmental pollution, compact structure, etc., and are a green and environment-friendly light source with great prospect. Compared with an ultraviolet fluorescent lamp, the ultraviolet LED has very high surface radiation light intensity due to small light emitting area, can be widely applied to the fields of sterilization, disinfection and the like, and is a most promising new generation ultraviolet light source. The use of uv LED technology will continue to grow rapidly, and uv LEDs will continue to remain a high focus of research, including the development of packages for uv LEDs.
How to improve the ultraviolet LED packaging structure and improve the sterilization capability is one of the problems that the technicians in the field have faced for a long time.
Disclosure of Invention
The invention provides a deep ultraviolet LED light source packaging structure which comprises an insulating substrate, a light emitting chip, a first electrode, a second electrode and a light condensing structure.
The light emitting chip is disposed on the upper surface of the insulating substrate. The first electrode and the second electrode are electrically connected to the anode and the cathode of the light emitting chip, respectively. The light-gathering structure is arranged on the upper surface of the insulating substrate and covers the light-emitting chip. The light-emitting chip comprises a light-emitting chip, wherein the inner side and/or the outer side of the light-condensing structure are/is provided with a reflecting structure, and the reflecting structure is used for emitting light emitted by the light-emitting chip towards the direction far away from the first surface.
In an embodiment, the light-gathering structure includes a covering structure and an extending structure, the covering structure covers the light-emitting chip, and the extending structure is connected to the covering structure and extends outward in a direction away from the first surface.
In one embodiment, the extension structure is an annular extension structure.
In one embodiment, the extension structure has an inclination angle between 105 ° and 135 °.
In an embodiment, the reflective structure is arranged inside and/or outside the extension structure.
In one embodiment, the light emitting chip is a deep ultraviolet light emitting chip, and the wavelength of the light emitting chip is 220nm to 280 nm.
In one embodiment, the light emitting chip is a flip chip, and a positive electrode and a negative electrode of the flip chip are connected to the first electrode and the second electrode through a first connection layer, respectively.
In an embodiment, the deep ultraviolet LED light source package structure further includes a second connection layer, and two ends of the second connection layer are respectively connected to the first surface of the insulating substrate and the light-gathering structure.
In one embodiment, the reflective structure includes a bragg reflective layer.
In one embodiment: the reflective structure includes a metallic reflective layer.
The invention provides a deep ultraviolet LED light source packaging structure, which can collect emitted deep ultraviolet light through the matching arrangement of a light-gathering structure and a reflecting structure, greatly improves the sterilization and disinfection capacity, and realizes a small-angle ultra-high power deep ultraviolet LED light source packaging structure.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts; in the following description, the drawings are illustrated in a schematic view, and the drawings are not intended to limit the present invention.
Fig. 1 is a schematic structural diagram of a deep ultraviolet LED light source package structure according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of the deep ultraviolet LED light source package structure of FIG. 1 with light paths;
fig. 3 is a schematic structural diagram of a deep ultraviolet LED light source package structure according to another embodiment of the present invention;
fig. 4 is a schematic structural diagram of a deep ultraviolet LED light source package structure according to another embodiment of the present invention.
Reference numerals:
10-deep ultraviolet LED light source packaging structure; 12-an insulating substrate; 122 — a first surface; 124-a second surface; 14-a light emitting chip; 16-a first electrode; 18-a second electrode; 20-a light-concentrating structure; 202-a cover structure; 204-extension structure; 22-a reflective structure; 24-a first tie layer; 26-a second tie layer; 28-grooves; l1-length of reflective structure; l2-maximum pore size of extended structure; l3 — length of light emitting chip; the angle of inclination is alpha.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some embodiments of the present invention, but not all embodiments; the technical features designed in the different embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other; all other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it is to be understood that the terms "center", "lateral", "up", "down", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like, indicate orientations and positional relationships based on those shown in the drawings, are only for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the device or component in question must have a particular orientation or be constructed and operated in a particular orientation, and therefore, should not be taken as limiting the present invention. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless otherwise specified. In addition, the term "comprises" and any variations thereof mean "including at least".
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integrally formed connection; can be mechanically or electrically connected; the two components can be directly connected or indirectly connected through an intermediate medium, and the two components can be communicated with each other. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of example embodiments. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used herein, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a deep ultraviolet LED light source package structure 10 according to an embodiment of the present invention, and fig. 2 is a schematic diagram of the deep ultraviolet LED light source package structure 10 of fig. 1 marked with a light path. To achieve at least one of the advantages or other advantages, an embodiment of the invention provides a deep ultraviolet LED light source package structure 10. As shown in the drawing, the deep ultraviolet LED light source package structure 10 includes an insulating substrate 12, a light emitting chip 14, a first electrode 16, a second electrode 18, a light condensing structure 20, and a reflecting structure 22. Further, the insulating substrate 12 has a first surface 122 and a second surface 124, i.e., an upper surface and a lower surface in the figure, which are opposite to each other; the light emitting chip 14 has a positive electrode and a negative electrode.
The light emitting chip 14 is disposed on the first surface 122 of the insulating substrate 12 for emitting light. Preferably, the light emitting chip 14 is a deep ultraviolet light emitting chip 14, and the light emitting wavelength is 220nm to 280 nm. Preferably, the insulating substrate 12 may be a ceramic substrate.
The first electrode 16 and the second electrode 18 are electrically connected to the positive electrode and the negative electrode of the light emitting chip 14, respectively. The first electrode 16 and the second electrode 18 are spaced apart. Preferably, the first electrode 16 and the second electrode 18 penetrate from the first surface 122 to the second surface 124 of the insulating substrate 12, so as to electrically connect to the outside.
The light-concentrating structure 20 is disposed on the first surface 122 of the insulating substrate 12 and covers the light-emitting chip 14, i.e., the light-emitting chip 14 is located inside the light-concentrating structure 20. The light-gathering structure 20 is used for gathering the light emitted by the light-emitting chip 14, so as to improve the sterilization and disinfection capability of the deep ultraviolet LED light source package structure 10.
The reflective structure 22 may be disposed on the inner side and/or the outer side of the light-focusing structure 20, and is used for emitting the light emitted from the light-emitting chip 14 toward a direction away from the first surface 122, i.e., emitting the light toward the upper direction in the drawing. In this embodiment, as shown in fig. 1 and fig. 2, the reflection structure 22 is disposed outside the light-gathering structure 20, so as to emit the light irradiated to the reflection structure 22 upwards, thereby achieving the effect of gathering the light, improving the sterilization capability, and realizing the deep ultraviolet LED light source package structure 10 with small angle and ultrahigh power.
Further, the light-gathering structure 20 is in a funnel shape, and includes a covering structure 202 and an extending structure 204, the covering structure 202 corresponds to a straight tube portion of the funnel, the extending structure 204 corresponds to a funnel portion of the funnel, and the covering structure 202 and the extending structure 204 may be integrally formed. The covering structure 202 covers the light emitting chip 14, and the extending structure 204 is connected to the covering structure 202 and extends outward away from the first surface 122. The flared extension may be understood as the aperture of the extension structure 204 is gradually larger as viewed in the direction from the second surface 124 to the first surface 122 as shown in the figure. Preferably, the extension structure 204 is an annular extension structure 204, and the middle of the extension structure is hollow, which is beneficial to light condensation. Since the extension structure 204 is extended outward, it has an inclination angle α, which is between 105 ° and 135 °, preferably between 108 ° and 122 °. The reflection structure 22 is disposed at the inner side and/or the outer side of the extension structure 204, which is beneficial to emitting the light irradiated to the reflection structure 22 upwards, and improving the sterilization and disinfection capability.
The existing quartz lens has structural defects and an amorphous structure, so that the transmittance of deep ultraviolet rays is greatly adversely affected, particularly for a large-area high-power deep ultraviolet chip, the influence is obvious under the condition of a plurality of integrated light sources, if light is required to be condensed and emitted at a small angle, a large amount of light can be absorbed by the larger thickness of the existing quartz lens, and the absorptivity of the existing quartz lens is as high as 30% -40%. Therefore, the deep ultraviolet LED light source package structure 10 of this patent reduces the thickness of the quartz component, and adopts the funnel-shaped quartz light-gathering structure 20, increases the light-emitting range by means of the gradually expanding extension structure 204, and gathers the light by means of the reflection structure 22 on the extension structure 204, so as to reach the effect similar to a convex lens, concentrate the light of small angle, and further greatly improve the sterilization and disinfection capability.
In one embodiment, as shown in FIG. 1, to ensure the light reflection effect of the reflective structure 22, the length L1 of the reflective structure 22 is between 1 μm and 20 μm. Preferably, the ratio of the maximum aperture L2 of the extension structure 204 to the length L3 of the light emitting chip 14 is between 2:1 and 5: 1.
In one embodiment, as shown in FIG. 1, the light emitting chip 14 is a flip chip. The positive and negative electrodes of the flip chip are connected to the first and second electrodes 16 and 18, respectively, through the first connection layer 24. The first connection layer 24 may be a solder layer, a solder paste, or the like.
In one embodiment, as shown in fig. 1, the deep ultraviolet LED light source package structure 10 further includes a second connection layer 26. The two ends of the second connection layer 26 are respectively connected to the first surface 122 of the insulating substrate 12 and the light-concentrating structure 20 to enhance the connection strength between the insulating substrate 12 and the light-concentrating structure 20. Preferably, the portion of the second connection layer 26 directly under the light emitting chip 14 connects the first electrode 16, the insulating substrate 12 and the second electrode 18, so as to enhance the overall structural strength. The second connection layer 26 may be a lens solder layer, an adhesive layer, or the like. For example, a gold-tin alloy may be deposited on the bottom of the cover structure 202, and co-gold-soldered to the insulating substrate 12 during packaging to form the second connection layer 26.
Further, the reflective structure 22 may include a bragg reflective structure 22, that is, the bragg reflective structure 22 is deposited on the surface of the light-gathering structure 20, and may have a reflectivity of 90% or more for deep ultraviolet light with a wavelength of 250 to 280 nm. The reflective structure 22 may also include a metal reflective structure 22, such as an aluminum metal layer, a silver metal layer, etc.
In one embodiment, as shown in FIG. 3, the reflective structure 22 is disposed inside the light concentrating structure 20. Preferably, the reflective structure 22 is disposed inside the extension structure 204 for reflecting light. Preferably, the reflective structure 22 is disposed on both the inner side and the outer side of the extension structure 204 to achieve multiple reflection effects.
Further, as shown in FIG. 4, the reflective structure 22 being disposed inside the extension structure 204 also includes embodiments in which the reflective structure 22 is disposed inside the extension structure 204. Specifically, the extending structure 204 is provided with the groove 28, and the reflecting structure 22 is disposed in the groove 28, so that the reflecting and condensing effect is better. Preferably, the reflective structure 22 has a shape similar to the shape of the extension structure 202, and is annular in shape.
It should be noted that the cover structure 202 may also be designed as an inclined structure as the extension structure 204, and then a reflective film is deposited on the surface of the cover structure 202 to further increase the light collection rate.
In summary, the present invention provides a deep ultraviolet LED light source package structure 10, which can collect the emitted deep ultraviolet light by the arrangement of the light-gathering structure 20 and the reflection structure 22, greatly improve the sterilization and disinfection capability, and realize the deep ultraviolet LED light source package structure 10 with small angle and ultrahigh power.
In addition, it will be appreciated by those skilled in the art that, although there may be many problems with the prior art, each embodiment or aspect of the present invention may be improved only in one or several respects, without necessarily simultaneously solving all the technical problems listed in the prior art or in the background. It will be understood by those skilled in the art that nothing in a claim should be taken as a limitation on that claim.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.

Claims (10)

1. The utility model provides a dark ultraviolet LED light source packaging structure which characterized in that: the deep ultraviolet LED light source packaging structure comprises:
an insulating substrate having opposing first and second surfaces;
a light emitting chip disposed on the first surface of the insulating substrate and having a positive electrode and a negative electrode;
a first electrode electrically connected to the anode of the light emitting chip;
the second electrode is electrically connected to the negative electrode of the light-emitting chip;
the light condensation structure is arranged on the first surface of the insulating substrate and covers the light emitting chip;
and the inner side and/or the outer side of the light condensation structure are/is provided with a reflection structure, and the reflection structure is used for emitting the light emitted by the light emitting chip towards the direction far away from the first surface.
2. The deep ultraviolet LED light source package structure of claim 1, wherein: the light gathering structure comprises a covering structure and an extending structure, the covering structure covers the light emitting chip, and the extending structure is connected to the covering structure and extends outwards in a direction away from the first surface.
3. The deep ultraviolet LED light source package structure of claim 2, wherein: the extension structure is an annular extension structure.
4. The deep ultraviolet LED light source package structure of claim 2, wherein: the extending structure has an inclination angle which is between 105 and 135 degrees.
5. The deep ultraviolet LED light source package structure of claim 2, wherein: the reflective structure is arranged inside and/or outside the extension structure.
6. The deep ultraviolet LED light source package structure of claim 1, wherein: the light-emitting chip is a deep ultraviolet light-emitting chip, and the wavelength of the light-emitting chip is 220 nm-280 nm.
7. The deep ultraviolet LED light source package structure of claim 1, wherein: the light-emitting chip is a flip chip, and the anode and the cathode of the flip chip are respectively connected to the first electrode and the second electrode through a first connecting layer.
8. The deep ultraviolet LED light source package structure of claim 1, wherein: the deep ultraviolet LED light source packaging structure further comprises a second connecting layer, and two ends of the second connecting layer are respectively connected with the first surface of the insulating substrate and the light condensation structure.
9. The deep ultraviolet LED light source package structure of any one of claims 1 to 8, wherein: the reflective structure includes a bragg reflective layer.
10. The deep ultraviolet LED light source package structure of any one of claims 1 to 8, wherein: the reflective structure includes a metallic reflective layer.
CN202111361029.9A 2021-11-17 2021-11-17 Deep ultraviolet LED light source packaging structure Pending CN114038983A (en)

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CN202111361029.9A CN114038983A (en) 2021-11-17 2021-11-17 Deep ultraviolet LED light source packaging structure

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Application Number Priority Date Filing Date Title
CN202111361029.9A CN114038983A (en) 2021-11-17 2021-11-17 Deep ultraviolet LED light source packaging structure

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Citations (11)

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JP2008166462A (en) * 2006-12-28 2008-07-17 Nichia Chem Ind Ltd Light-emitting device
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CN102683544A (en) * 2011-03-17 2012-09-19 展晶科技(深圳)有限公司 Paster type light-emitting diode
DE202017103633U1 (en) * 2017-06-20 2018-09-24 Tridonic Jennersdorf Gmbh LED module with reflector and integrated color conversion means
CN208240718U (en) * 2018-05-22 2018-12-14 佛山市国星光电股份有限公司 A kind of uv-LED device and its ultraviolet LED lamp
US20200292149A1 (en) * 2019-03-11 2020-09-17 Yu-Chen Shen Light extraction bridge in cups
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CN216389420U (en) * 2021-11-17 2022-04-26 厦门瑶光半导体科技有限公司 Deep ultraviolet LED light source packaging structure

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1534355A (en) * 2003-04-01 2004-10-06 ������������ʽ���� Assembly for lighting device, lighting device, back side lighting device and display
US20090262536A1 (en) * 2004-12-09 2009-10-22 Koninklijke Philips Electronics N.V. Illumination system
EP1780798A1 (en) * 2005-10-27 2007-05-02 Barco, naamloze vennootschap. Integrated led devices with increased pixel fill factor for achieving improved image quality of led display panels
JP2008166462A (en) * 2006-12-28 2008-07-17 Nichia Chem Ind Ltd Light-emitting device
KR20120020600A (en) * 2010-08-30 2012-03-08 엘지이노텍 주식회사 Light emitting device package
CN102683544A (en) * 2011-03-17 2012-09-19 展晶科技(深圳)有限公司 Paster type light-emitting diode
DE202017103633U1 (en) * 2017-06-20 2018-09-24 Tridonic Jennersdorf Gmbh LED module with reflector and integrated color conversion means
CN208240718U (en) * 2018-05-22 2018-12-14 佛山市国星光电股份有限公司 A kind of uv-LED device and its ultraviolet LED lamp
US20210091278A1 (en) * 2018-06-08 2021-03-25 Seoul Viosys Co., Ltd. Light-emitting device package and manufacturing method therefor
US20200292149A1 (en) * 2019-03-11 2020-09-17 Yu-Chen Shen Light extraction bridge in cups
CN216389420U (en) * 2021-11-17 2022-04-26 厦门瑶光半导体科技有限公司 Deep ultraviolet LED light source packaging structure

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