CN113913764A - 一种高迁移率透明导电氧化物薄膜及其制备方法 - Google Patents
一种高迁移率透明导电氧化物薄膜及其制备方法 Download PDFInfo
- Publication number
- CN113913764A CN113913764A CN202111156884.6A CN202111156884A CN113913764A CN 113913764 A CN113913764 A CN 113913764A CN 202111156884 A CN202111156884 A CN 202111156884A CN 113913764 A CN113913764 A CN 113913764A
- Authority
- CN
- China
- Prior art keywords
- sputtering
- target
- argon
- tellurium
- tco film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 7
- 238000004544 sputter deposition Methods 0.000 claims abstract description 39
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 32
- 229910052714 tellurium Inorganic materials 0.000 claims abstract description 23
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims abstract description 22
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052706 scandium Inorganic materials 0.000 claims abstract description 18
- 229910052786 argon Inorganic materials 0.000 claims abstract description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000001301 oxygen Substances 0.000 claims abstract description 16
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 16
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910003437 indium oxide Inorganic materials 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 13
- 239000012535 impurity Substances 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 229910052738 indium Inorganic materials 0.000 claims abstract description 9
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000007789 gas Substances 0.000 claims abstract description 8
- 238000002156 mixing Methods 0.000 claims abstract description 8
- 239000012495 reaction gas Substances 0.000 claims abstract description 7
- 239000013077 target material Substances 0.000 claims abstract description 7
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 5
- 238000005477 sputtering target Methods 0.000 claims abstract description 4
- 238000000151 deposition Methods 0.000 claims abstract description 3
- 230000008021 deposition Effects 0.000 claims abstract description 3
- 239000010408 film Substances 0.000 claims description 43
- 238000004140 cleaning Methods 0.000 claims description 7
- 238000000137 annealing Methods 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 3
- 238000002834 transmittance Methods 0.000 abstract description 10
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 description 3
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 1
- 229910001449 indium ion Inorganic materials 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 230000007847 structural defect Effects 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- -1 tellurium ions Chemical class 0.000 description 1
- 229910001432 tin ion Inorganic materials 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/23—Oxides
- C03C17/245—Oxides by deposition from the vapour phase
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5806—Thermal treatment
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Manufacturing Of Electric Cables (AREA)
- Physical Vapour Deposition (AREA)
Abstract
本发明公开了一种高迁移率透明导电氧化物薄膜及其制备方法，TCO薄膜生长采用反应射频磁控溅射法，在室温下生长碲与钪共掺杂的氧化铟TCO薄膜；溅射用靶材为铟靶、碲靶、钪靶，溅射工作气体为氩气，反应气体为氧气；在TCO薄膜生长之前，溅射室只通入氩气，对三靶进行15‑30分钟的预溅射，去除靶材表面吸附的杂质以及表面氧化物，当TCO薄膜开始生长时，氩气和氧气经过混气室充分混合以后进入溅射室，氩气与氧气的流量之比为50:1~20:1，溅射气压为0.1~0.4 Pa；铟靶溅射功率200 W，碲靶溅射功率为20~30 W，钪靶溅射功率为1~2 W；基底沉积温度为室温，溅射时间为10~20分钟。本发明获得的TCO薄膜中的载流子迁移率高、电阻率较低，同时光透过率也高。
Description
技术领域
本发明属于透明导电氧化物薄膜领域，涉及一种高载流子迁移率的透明导电氧化物薄膜及其制备方法。
背景技术
透明导电氧化物(TCO)薄膜具有光透过率高、导电性能优良等特点，在平板显示器、太阳能电池等领域有着广泛的应用。影响TCO薄膜的低电阻率和高光透过率的两个关键因素是载流子浓度和载流子迁移率，为了降低薄膜的电阻率，可以通过增加载流子浓度来实现，但载流子浓度的增加会引起寄生自由载流子吸收，从而降低薄膜的光透过率。增加TCO薄膜的迁移率也可以降低薄膜电阻率，但不会引起光透过率的减少，因此，提高薄膜的迁移率对于获得低电阻率和高光透过率的TCO薄膜非常关键。
材料的迁移率主要由包括声子和杂质在内的载流子散射过程决定，除此之外，还与薄膜内的晶界、位错等结构缺陷相关，而且，薄膜表面和界面的粗糙度也会对载流子进行散射。通过优化掺杂浓度以减少电离杂质和中性散射的影响，或优化材料结构以减少晶界散射，是目前同时获得高迁移率和低电阻率的主要方法。TCO薄膜中的高迁移率是由掺杂杂质的散射截面较低导致的，抑制了氧间隙的散射。在氧化镉(CdO)掺钇、镝、钪或铟等元素，可以抑制缺陷的散射，获得高迁移率的TCO薄膜，然而，镉的毒性阻碍了CdO基TCO薄膜的大规模产业化应用。
发明内容
本发明的目的是提供电阻率低、光学透过率高的氧化铟TCO薄膜，以及此种TCO薄膜的制备方法。
我们通过理论模拟计算发现，在氧化铟(In2O3)掺入碲(Te)元素，氧化铟的最低导带与碲掺杂的相关轨道发生相互重叠的几率很小，因此，碲掺杂的氧化铟中的电子受到掺入杂质原子的散射几率很低，电子的平均自由程时间较长，电子的有效质量较小且与载流子浓度的关联性较弱。另外，与80pm的锡离子(Sn4+)半径相比，97pm的碲离子(Te4+)半径更接近铟离子(In3+)半径(94pm)，从而碲掺杂大幅降低了掺杂原子引起的晶格应变。同时，碲掺杂降低了氧空位浓度，使得氧空位对杂质的散射较低。因此，碲掺杂的氧化铟TCO薄膜中的载流子迁移率高、电阻率较低，同时光透过率也高，这主要归功于碲掺杂剂和氧空位的低杂质散射。
此外，通过计算我们还发现，掺入少量的钪元素，由于钪原子具有较大的电子价态密度，导致氧化铟晶胞的费米能级升高，在费米能级附近形成新的电子占据态，从而降低了氧化铟晶胞的形成自由能，可以增加晶粒成核的几率，增大TCO薄膜中晶粒的尺寸，达到减少晶界散射的目的，提高了薄膜的迁移率。钪的掺杂还起到了一个作用，那就是阻止碲在薄膜后续的退火过程的析出。
在此基础上，本发明采用的技术方案是这样的：
一种高迁移率透明导电氧化物薄膜的制备方法，包括下述步骤：
1)清洗玻璃衬底：以普通玻璃为衬底，反复清洗干净后吹干；
2)TCO薄膜生长：采用反应射频磁控溅射法，在室温下生长碲与钪共掺杂的氧化铟TCO薄膜；溅射用靶材为铟靶、碲靶、钪靶，纯度均大于99.99％，溅射工作气体为氩气，反应气体为氧气，纯度均大于99.999％；溅射室的本底真空优于4×10-5Pa，靶材与样品之间距离为12～15cm；在TCO薄膜生长之前，溅射室只通入氩气，对三靶进行15-30分钟的预溅射，去除靶材表面吸附的杂质以及表面氧化物，当TCO薄膜开始生长时，氩气和氧气经过混气室充分混合以后进入溅射室，氩气与氧气的流量之比为50:1～20:1，溅射气压为0.1～0.4Pa；铟靶溅射功率200W，碲靶溅射功率为20～30W，钪靶溅射功率为1～2W；基底沉积温度为室温，溅射时间为10～20分钟；
3)退火处理：放入氢气氛围中在400～500℃温度下退火20～30分钟。
本发明的另一技术方案是通过以上方法制备得到的高迁移率透明导电氧化物薄膜。
本发明提出了在氧化铟中掺入适量的碲、钪，提高了TCO薄膜中载流子迁移率。采用反应磁控溅射的方法制备碲与钪共掺杂的氧化铟薄膜，然后在氢气氛围下进行退火处理，减少了薄膜中的缺陷密度。从而可获得电阻率低、光学透过率高的氧化铟TCO薄膜。
具体实施方式
1.玻璃衬底的清洗
以普通玻璃为衬底，首先采用去污粉清洗，之后用去离子水冲洗。其次，放入浓硫酸与双氧水的混合比例为2:1的溶液中浸泡10分钟，然后用去离子水反复冲洗干净，之后用酒精冲洗，最后氮气吹干。
2.TCO薄膜生长
采用反应射频磁控溅射(三靶共溅)方法，在室温下生长碲与钪共掺杂的氧化铟TCO薄膜。溅射用靶材为铟靶、碲靶、钪靶，纯度均大于99.99％，溅射工作气体为氩气，反应气体为氧气，纯度均大于99.999％。溅射室的本底真空优于4×10-5Pa，靶材与样品之间距离为12～15cm。在TCO薄膜生长之前，溅射室只通入氩气，对三靶进行15-30分钟的预溅射，去除靶材表面吸附的杂质以及表面氧化物。当TCO薄膜开始生长时，氩气和氧气经过混气室充分混合以后进入溅射室，氩气与氧气的流量之比为50:1～20:1，溅射气压为0.1～0.4Pa。铟靶溅射功率200W，碲靶溅射功率为20～30W，钪靶溅射功率为1～2W。基底沉积温度为室温，溅射时间为10～20分钟。
3.退火处理
在室温下生长的碲与钪共掺杂氧化铟TCO薄膜，随后放入氢气氛围中在400～500℃温度下退火20～30分钟。
4.薄膜性能测试分析
薄膜的厚度用台阶仪测量，方块电阻利用四探针测试仪测量,电导率通过薄膜厚度与方块电阻乘积得到。薄膜的透射率用分光光度计测量，迁移率采用范德堡法测量，并得到载流子浓度。
Claims (2)
1.一种高迁移率透明导电氧化物薄膜的制备方法，包括下述步骤：
1)清洗玻璃衬底：以普通玻璃为衬底，反复清洗干净后吹干；
2)TCO薄膜生长：采用反应射频磁控溅射法，在室温下生长碲与钪共掺杂的氧化铟TCO薄膜；溅射用靶材为铟靶、碲靶、钪靶，纯度均大于99.99％，溅射工作气体为氩气，反应气体为氧气，纯度均大于99.999％；溅射室的本底真空优于4×10-5Pa，靶材与样品之间距离为12～15cm；在TCO薄膜生长之前，溅射室只通入氩气，对三靶进行15-30分钟的预溅射，去除靶材表面吸附的杂质以及表面氧化物，当TCO薄膜开始生长时，氩气和氧气经过混气室充分混合以后进入溅射室，氩气与氧气的流量之比为50:1～20:1，溅射气压为0.1～0.4Pa；铟靶溅射功率200W，碲靶溅射功率为20～30W，钪靶溅射功率为1～2W；基底沉积温度为室温，溅射时间为10～20分钟；
3)退火处理：放入氢气氛围中在400～500℃温度下退火20～30分钟。
2.如权利要求1所述的方法所制备的高迁移率透明导电氧化物薄膜。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111156884.6A CN113913764B (zh) | 2021-09-30 | 2021-09-30 | 一种高迁移率透明导电氧化物薄膜及其制备方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111156884.6A CN113913764B (zh) | 2021-09-30 | 2021-09-30 | 一种高迁移率透明导电氧化物薄膜及其制备方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113913764A true CN113913764A (zh) | 2022-01-11 |
| CN113913764B CN113913764B (zh) | 2023-05-16 |
Family
ID=79237553
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111156884.6A Active CN113913764B (zh) | 2021-09-30 | 2021-09-30 | 一种高迁移率透明导电氧化物薄膜及其制备方法 |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113913764B (zh) |
Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0315106A (ja) * | 1989-06-13 | 1991-01-23 | Tosoh Corp | 酸化物焼結体及びその用途 |
| JP2001152323A (ja) * | 1999-11-29 | 2001-06-05 | Canon Inc | 透明電極および光起電力素子の作製方法 |
| JP2004299963A (ja) * | 2003-03-31 | 2004-10-28 | Toyobo Co Ltd | Ｉｎ２Ｏ３材料およびそれより成る半導体装置、システム |
| CN1795516A (zh) * | 2003-05-26 | 2006-06-28 | 日本曹达株式会社 | 带有透明导电膜的透光性基板 |
| CN1957425A (zh) * | 2004-05-21 | 2007-05-02 | Tdk株式会社 | 透明导电材料、透明导电膏、透明导电膜和透明电极 |
| CN101514440A (zh) * | 2009-02-19 | 2009-08-26 | 浙江大学 | 一种高电子迁移率氧化铟透明薄膜的制备方法 |
| CN102482796A (zh) * | 2009-08-24 | 2012-05-30 | 第一太阳能有限公司 | 掺杂的透明导电氧化物 |
| US20140269238A1 (en) * | 2013-03-15 | 2014-09-18 | Seagate Technology Llc | Head transducer employing thermal sensor with high-tcr transparent conducting oxide |
| CN105321827A (zh) * | 2015-10-26 | 2016-02-10 | 华南理工大学 | 湿法刻蚀型氧化物薄膜晶体管的制备方法及所制备的薄膜晶体管 |
| CN106927689A (zh) * | 2017-04-17 | 2017-07-07 | 华南理工大学 | 一种氧化物半导体薄膜及其制备工艺 |
| CN109504941A (zh) * | 2018-12-27 | 2019-03-22 | 浙江师范大学 | 氟和钼共掺杂氧化锌透明导电薄膜的制备方法 |
| CN112713196A (zh) * | 2020-12-11 | 2021-04-27 | 广州国显科技有限公司 | 一种薄膜晶体管及其制备方法和阵列基板 |
-
2021
- 2021-09-30 CN CN202111156884.6A patent/CN113913764B/zh active Active
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0315106A (ja) * | 1989-06-13 | 1991-01-23 | Tosoh Corp | 酸化物焼結体及びその用途 |
| JP2001152323A (ja) * | 1999-11-29 | 2001-06-05 | Canon Inc | 透明電極および光起電力素子の作製方法 |
| JP2004299963A (ja) * | 2003-03-31 | 2004-10-28 | Toyobo Co Ltd | Ｉｎ２Ｏ３材料およびそれより成る半導体装置、システム |
| CN1795516A (zh) * | 2003-05-26 | 2006-06-28 | 日本曹达株式会社 | 带有透明导电膜的透光性基板 |
| CN1957425A (zh) * | 2004-05-21 | 2007-05-02 | Tdk株式会社 | 透明导电材料、透明导电膏、透明导电膜和透明电极 |
| CN101514440A (zh) * | 2009-02-19 | 2009-08-26 | 浙江大学 | 一种高电子迁移率氧化铟透明薄膜的制备方法 |
| CN102482796A (zh) * | 2009-08-24 | 2012-05-30 | 第一太阳能有限公司 | 掺杂的透明导电氧化物 |
| US20140269238A1 (en) * | 2013-03-15 | 2014-09-18 | Seagate Technology Llc | Head transducer employing thermal sensor with high-tcr transparent conducting oxide |
| CN105321827A (zh) * | 2015-10-26 | 2016-02-10 | 华南理工大学 | 湿法刻蚀型氧化物薄膜晶体管的制备方法及所制备的薄膜晶体管 |
| CN106927689A (zh) * | 2017-04-17 | 2017-07-07 | 华南理工大学 | 一种氧化物半导体薄膜及其制备工艺 |
| CN109504941A (zh) * | 2018-12-27 | 2019-03-22 | 浙江师范大学 | 氟和钼共掺杂氧化锌透明导电薄膜的制备方法 |
| CN112713196A (zh) * | 2020-12-11 | 2021-04-27 | 广州国显科技有限公司 | 一种薄膜晶体管及其制备方法和阵列基板 |
Non-Patent Citations (2)
| Title |
|---|
| C. H. LEE ET AL: "Spray pyrolysis deposition for indium oxide doped with different impurities" * |
| 原子健;朱夏明;王雄;张莹莹;万正芬;邱东江;吴惠桢;杜滨阳;: "氧化铟薄膜制备及其特性研究" * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113913764B (zh) | 2023-05-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Wang et al. | Influence of thickness and annealing temperature on the electrical, optical and structural properties of AZO thin films | |
| Wang et al. | Growth of ZnO: Al films by RF sputtering at room temperature for solar cell applications | |
| Minami et al. | Preparation of transparent and conductive In2O3–ZnO films by radio frequency magnetron sputtering | |
| Zhu et al. | Sputtering deposition of transparent conductive F-doped SnO2 (FTO) thin films in hydrogen-containing atmosphere | |
| De et al. | A study of the structural and electronic properties of magnetron sputtered tin oxide films | |
| Li et al. | Study on the hydrogen doped indium oxide for silicon heterojunction solar cell application | |
| Guo et al. | Effect of ITO film deposition conditions on ITO and CdS films of semiconductor solar cells | |
| CN100565716C (zh) | 透明导电薄膜及其制备方法 | |
| CN102071402A (zh) | 一种金属掺杂氧化锌基薄膜的制备方法 | |
| Jung et al. | Properties of AZO thin films for solar cells deposited on polycarbonate substrates | |
| CN113913764B (zh) | 一种高迁移率透明导电氧化物薄膜及其制备方法 | |
| EP2690192B1 (en) | Multi-elements-doped zinc oxide film, manufacturing method and application thereof | |
| Aliyu et al. | High quality indium tin oxide (ITO) film growth by controlling pressure in RF magnetron sputtering | |
| KR100682741B1 (ko) | 산화 아연 계 투명 전도성 산화물 박막의 제조 방법 | |
| Sun et al. | Properties of indium molybdenum oxide films fabricated via high-density plasma evaporation at room temperature | |
| Meng et al. | Optical and electrical properties of H and V co-doped ZnO films sputtered at room temperature | |
| CN103103479B (zh) | 一种硫氮共掺杂制备p型氧化锌薄膜的方法 | |
| CN112968076A (zh) | 一种透明导电薄膜的制备方法 | |
| KR100806681B1 (ko) | 주기적 급속 열처리에 의한 고전도성 산화아연의 제조방법 | |
| KR20140120663A (ko) | 산화알루미늄아연 박막의 제조 방법 | |
| CN110970523A (zh) | 一种硅基异质结太阳能电池及制造方法 | |
| CN117293204A (zh) | 一种透明导电氧化物薄膜 | |
| CN114134475A (zh) | 一种高迁移率、高透光igzo薄膜的制备方法及其应用 | |
| Chang et al. | Influence of applied power in microwave hydrogen plasma annealing on aluminum doped zinc oxide/tin doped indium oxide bilayer films for low emissivity application | |
| CN117684137A (zh) | 一种高性能多元掺杂氧化锌透明导电薄膜的制备方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20231220 Address after: No. 18, Wenshan Road, Chahe Town, Lai'an County, Chuzhou City, Anhui Province 239200 Patentee after: Chuzhou Jietai New Energy Technology Co.,Ltd. Address before: 321004 No. 688 Yingbin Road, Zhejiang, Jinhua Patentee before: ZHEJIANG NORMAL University |