CN113871302B - N型二硒化钨负电容场效应晶体管及其制备方法 - Google Patents
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- ROUIDRHELGULJS-UHFFFAOYSA-N bis(selanylidene)tungsten Chemical compound [Se]=[W]=[Se] ROUIDRHELGULJS-UHFFFAOYSA-N 0.000 title claims abstract description 71
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 238000002353 field-effect transistor method Methods 0.000 title description 2
- 230000005669 field effect Effects 0.000 claims abstract description 45
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 45
- 239000010409 thin film Substances 0.000 claims abstract description 37
- KQHQLIAOAVMAOW-UHFFFAOYSA-N hafnium(4+) oxygen(2-) zirconium(4+) Chemical compound [O--].[O--].[O--].[O--].[Zr+4].[Hf+4] KQHQLIAOAVMAOW-UHFFFAOYSA-N 0.000 claims abstract description 32
- 229910052738 indium Inorganic materials 0.000 claims abstract description 30
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 30
- 239000004065 semiconductor Substances 0.000 claims abstract description 29
- 229910052751 metal Inorganic materials 0.000 claims abstract description 28
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- 230000005621 ferroelectricity Effects 0.000 claims abstract description 5
- -1 hafnium-zirconium-iron oxide Chemical compound 0.000 claims abstract description 3
- 238000005137 deposition process Methods 0.000 claims description 22
- INIGCWGJTZDVRY-UHFFFAOYSA-N hafnium zirconium Chemical compound [Zr].[Hf] INIGCWGJTZDVRY-UHFFFAOYSA-N 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 17
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- 239000010703 silicon Substances 0.000 claims description 9
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 8
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- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 claims description 4
- ZYLGGWPMIDHSEZ-UHFFFAOYSA-N dimethylazanide;hafnium(4+) Chemical compound [Hf+4].C[N-]C.C[N-]C.C[N-]C.C[N-]C ZYLGGWPMIDHSEZ-UHFFFAOYSA-N 0.000 claims description 4
- DWCMDRNGBIZOQL-UHFFFAOYSA-N dimethylazanide;zirconium(4+) Chemical compound [Zr+4].C[N-]C.C[N-]C.C[N-]C.C[N-]C DWCMDRNGBIZOQL-UHFFFAOYSA-N 0.000 claims description 4
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical group [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 4
- 238000007669 thermal treatment Methods 0.000 claims 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 4
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- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
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- 229910003090 WSe2 Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
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- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
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Abstract
本发明提供了一种N型二硒化钨负电容场效应晶体管的制备方法,包括在所述栅电极层上沉积厚度为19~21nm的氧化铪锆铁电薄膜,在所述氧化铪锆铁电薄膜上沉积厚度为1~3nm的氧化铝电容匹配层,控制氧化铪锆铁电薄膜和氧化铝电容匹配层的厚度,提高了铁电负电容性能,对所述氧化铪锆铁电薄膜和所述氧化铝电容匹配层进行热处理,以提高铁电性,将所述二硒化钨半导体转移至所述氧化铝电容匹配层上,在所述二硒化钨半导体上形成金属铟源电极和金属铟漏电极,通过匹配二硒化钨半导体和金属铟的功参数,提高了N型接触性能,进而降低了N型二硒化钨负电容场效应晶体管的亚阈值摆幅。本发明还提供了一种N型二硒化钨负电容场效应晶体管。
Description
技术领域
本发明涉及半导体技术领域,尤其涉及一种N型二硒化钨负电容场效应晶体管及其制备方法。
背景技术
信息技术的快速发展,特别是物联网的出现,带来了对高性能电子设备的迫切需求。例如,便携式设备和处理海量数据对超低功耗逻辑单元的要求很高。然而,当传统的硅基场效应晶体管进入亚5 nm工艺节点时,沟道长度和栅极电介质厚度仅为数纳米,使半导体沟道的载流子迁移率急剧下降,静电栅极控制能力减弱,短沟道效应突出。在这种情况下,器件的亚阈值摆幅(Subthreshold swing,SS)将增加,栅极漏电流变得显著,导致不可忽略的静态功耗。到目前为止,制备低亚阈值摆幅的N型WSe2负电容场效应晶体管的亚阈值摆幅较高。
因此,有必要提供一种新型的N型二硒化钨负电容场效应晶体管及其制备方法以解决现有技术中存在的上述问题。
发明内容
本发明的目的在于提供一种N型二硒化钨负电容场效应晶体管及其制备方法,降低了亚阈值摆幅。
为实现上述目的,本发明的所述N型二硒化钨负电容场效应晶体管的制备方法,包括:
提供栅电极层和二硒化钨半导体;
通过原子沉积工艺在所述栅电极层上沉积厚度为19~21nm的氧化铪锆铁电薄膜;
通过原子沉积工艺在所述氧化铪锆铁电薄膜上沉积厚度为1~3nm的氧化铝电容匹配层;
对所述氧化铪锆铁电薄膜和所述氧化铝电容匹配层进行热处理,以提高铁电性;
将所述二硒化钨半导体转移至所述氧化铝电容匹配层上;
在所述二硒化钨半导体上形成金属铟源电极和金属铟漏电极。
所述N型二硒化钨负电容场效应晶体管的制备方法的有益效果在于:通过原子沉积工艺在所述栅电极层上沉积厚度为19~21nm的氧化铪锆铁电薄膜,通过原子沉积工艺在所述氧化铪锆铁电薄膜上沉积厚度为1~3nm的氧化铝电容匹配层,通过控制氧化铪锆铁电薄膜和氧化铝电容匹配层的厚度,提高了N型二硒化钨负电容场效应晶体管的铁电负电容性能,在所述二硒化钨半导体上形成金属铟源电极和金属铟漏电极,通过匹配二硒化钨半导体和金属铟的功参数,提高了N型接触性能,铁电负电容性能和N型接触性能的提高,降低了N型二硒化钨负电容场效应晶体管的亚阈值摆幅,提高了N型二硒化钨负电容场效应晶体管的性能。
可选地,所述通过原子沉积工艺在所述栅电极层上沉积厚度为19~21nm的氧化铪锆铁电薄膜,包括:
通过四(二甲氨基)铪提供铪原子,通过四(二甲氨基)锆提供锆原子,通过水提供氧原子。
可选地,所述通过原子沉积工艺在所述栅电极层上沉积厚度为19~21nm的氧化铪锆铁电薄膜的温度条件为225~275摄氏度。
可选地,所述通过原子沉积工艺在所述氧化铪锆铁电薄膜上沉积厚度为1~3nm的氧化铝电容匹配层,包括:
通过三甲基铝提供铝原子,通过水提供氧原子。
可选地,所述通过原子沉积工艺在所述氧化铪锆铁电薄膜上沉积厚度为1~3nm的氧化铝电容匹配层的温度条件为275~325摄氏度。
可选地,所述对所述氧化铪锆铁电薄膜和所述氧化铝电容匹配层进行热处理的温度条件为475~525摄氏度。其有益效果在于:合理的温度控制,能够进一步提高铁电性能。
可选地,所述对所述氧化铪锆铁电薄膜和所述氧化铝电容匹配层进行热处理的时间条件为55~65秒。
可选地,所述对所述氧化铪锆铁电薄膜和所述氧化铝电容匹配层进行热处理的环境条件为氮气。
可选地,所述栅电极层为P型深掺杂硅基底,所述N型二硒化钨负电容场效应晶体管的制备方法还包括对所述栅电极层进行清洗。
本发明还提供了一种N型二硒化钨负电容场效应晶体管,包括:
栅电极层;
氧化铪锆铁电薄膜,厚度为19~21nm,设置于所述栅电极层的一面;
氧化铝电容匹配层,厚度为1~3nm,设置于所述氧化铪锆铁电薄膜背向所述栅电极层的一面;
二硒化钨半导体,设置于所述氧化铝电容匹配层背向所述氧化铪锆铁电薄膜的一面;
金属铟源电极,设置于所述二硒化钨半导体背向所述氧化铝电容匹配层的一面;
金属铟漏电极,设置于所述二硒化钨半导体背向所述氧化铝电容匹配层的一面。
所述N型二硒化钨负电容场效应晶体管的有益效果在于:所述氧化铪锆铁电薄膜的厚度为19~21nm,所述氧化铝电容匹配层的厚度为1~3nm。
可选地,所述栅电极层为P型深掺杂硅基底。
可选地,所述金属铟源电极和所述金属铟漏电极的厚度均为39~41nm。
附图说明
图1为本发明N型二硒化钨负电容场效应晶体管的制备方法的流程图;
图2为本发明N型二硒化钨负电容场效应晶体管的结构示意图;
图3为本发明N型二硒化钨负电容场效应晶体管的转移特性曲线图;
图4为本发明N型二硒化钨负电容场效应晶体管的亚阈值摆幅示意图。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚,下面将结合本发明的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例是本发明的一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。除非另外定义,此处使用的技术术语或者科学术语应当为本发明所属领域内具有一般技能的人士所理解的通常意义。本文中使用的“包括”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同,而不排除其他元件或者物件。
针对现有技术存在的问题,本发明的实施例提供了一种N型二硒化钨负电容场效应晶体管的制备方法。参照图1,所述N型二硒化钨负电容场效应晶体管的制备方法包括以下步骤:
S0:提供栅电极层和二硒化钨半导体;
S1:通过原子沉积工艺在所述栅电极层上沉积厚度为19~21nm的氧化铪锆铁电薄膜;
S2:通过原子沉积工艺在所述氧化铪锆铁电薄膜上沉积厚度为1~3nm的氧化铝电容匹配层;
S3:对所述氧化铪锆铁电薄膜和所述氧化铝电容匹配层进行热处理,以提高铁电性;
S4:将所述二硒化钨半导体转移至所述氧化铝电容匹配层上;
S5:在所述二硒化钨半导体上形成金属铟源电极和金属铟漏电极。
一些实施例中,所述通过原子沉积工艺在所述栅电极层上沉积厚度为19~21nm的氧化铪锆铁电薄膜,包括:通过四(二甲氨基)铪提供铪原子,通过四(二甲氨基)锆提供锆原子,通过水提供氧原子。
一些实施例中,所述通过原子沉积工艺在所述栅电极层上沉积厚度为19~21nm的氧化铪锆铁电薄膜的温度条件为225~275摄氏度。
一些实施例中,所述通过原子沉积工艺在所述氧化铪锆铁电薄膜上沉积厚度为1~3nm的氧化铝电容匹配层,包括:通过三甲基铝提供铝原子,通过水提供氧原子。
一些实施例中,所述通过原子沉积工艺在所述氧化铪锆铁电薄膜上沉积厚度为1~3nm的氧化铝电容匹配层的温度条件为275~325摄氏度。
一些实施例中,所述对所述氧化铪锆铁电薄膜和所述氧化铝电容匹配层进行热处理的温度条件为475~525摄氏度。
一些实施例中,所述对所述氧化铪锆铁电薄膜和所述氧化铝电容匹配层进行热处理的时间条件为55~65秒。
一些实施例中,所述对所述氧化铪锆铁电薄膜和所述氧化铝电容匹配层进行热处理的环境条件为氮气。
一些实施例中,所述栅电极层为P型深掺杂硅基底,所述N型二硒化钨负电容场效应晶体管的制备方法还包括对所述栅电极层进行清洗。
一些具体实施例中,所述N型二硒化钨负电容场效应晶体管的制备方法包括以下步骤:
S11:利用RCA标准清洗法对P型掺杂硅基底进行清洗,并作为N型二硒化钨负电容场效应晶体管的栅电极层;
S12:以四(二甲氨基)铪([(CH3)2N]4Hf)提供铪原子(Hf),以四(二甲氨基)锆([(CH3)2N]4Zr)提供锆原子(Zr),以水(H2O)提供氧原子(O),在250摄氏度的温度条件下,通过原子沉积工艺在所述栅电极层上沉积厚度为20nm的氧化铪锆(HfZrO2)铁电薄膜;
S13:以三甲基铝(Al(CH3)3)提供铝原子(Al),以水(H2O)提供氧原子(O),在300摄氏度的温度条件下,通过原子沉积工艺在所述氧化铪锆铁电薄膜上沉积厚度为2nm的氧化铝电容匹配层,使得所述氧化铝电容匹配层具有良好的绝缘性;
S14:在环境为氮气(N2)和温度为500摄氏度的条件下,对所述氧化铪锆铁电薄膜和所述氧化铝电容匹配层进行60秒的热处理,以提高铁电性;
S15:将预先制备好的二硒化钨(Wse2)半导体转移至所述氧化铝电容匹配层上;
S16:利用电子束曝光技术和电子束蒸发方法在所述二硒化钨半导体上生成厚度为40nm的金属铟源电极和厚度为40nm的金属铟漏电极。
图2为本发明N型二硒化钨负电容场效应晶体管的结构示意图。参照图2,所述二硒化钨负电容场效应晶体管100包括栅电极层101、氧化铪锆铁电薄膜102、氧化铝电容匹配层103、二硒化钨半导体104、金属铟源电极105和金属铟漏电极106,所述氧化铪锆铁电薄膜102的厚度为19~21nm,所述氧化铝电容匹配层103厚度为1~3nm,所述氧化铪锆铁电薄膜102设置于所述栅电极层101的一面,所述氧化铝电容匹配层103设置于所述氧化铪锆铁电薄膜102背向所述栅电极层101的一面,所述二硒化钨半导体104设置于所述氧化铝电容匹103配层背向所述氧化铪锆铁电薄膜102的一面,所述金属铟源电极105和所述金属铟漏电极106均设置于所述二硒化钨半导体104背向所述氧化铝电容匹配层103的一面。
一些实施例中,所述二硒化钨半导体为二维半导体,所述N型二硒化钨负电容场效应晶体管的二维沟道层。
一些具体实施例中,所述栅电极层为P型深掺杂硅基底。
一些具体实施例中,所述氧化铪锆铁电薄膜的厚度为20nm,所述氧化铝电容匹配层厚度为2nm。
一些实施例中,所述金属铟源电极和所述金属铟漏电极的厚度均为39~41nm。
一些具体实施例中,所述金属铟源电极和所述金属铟漏电极的厚度均为40nm。
图3为本发明N型二硒化钨负电容场效应晶体管的转移特性曲线图。参照图3,可以看出本发明的N型二硒化钨负电容场效应晶体管表现出明显的N型特征,本发明的N型二硒化钨负电容场效应晶体管的开关电流比达到109,具有优异的器件性能。
图4为本发明N型二硒化钨负电容场效应晶体管的亚阈值摆幅示意图。参照图4,本发明的N型二硒化钨负电容场效应晶体管的亚阈值摆幅能够达到12.7mV/dec,远低于传统的场效应晶体管的亚阈值摆幅只能达到60mV/dec的限制。
虽然在上文中详细说明了本发明的实施方式,但是对于本领域的技术人员来说显而易见的是,能够对这些实施方式进行各种修改和变化。但是,应理解,这种修改和变化都属于权利要求书中所述的本发明的范围和精神之内。而且,在此说明的本发明可有其它的实施方式,并且可通过多种方式实施或实现。
Claims (12)
1.一种N型二硒化钨负电容场效应晶体管的制备方法,其特征在于,包括:
提供栅电极层和二硒化钨半导体;
通过原子沉积工艺在所述栅电极层上沉积厚度为19~21nm的氧化铪锆铁电薄膜;
通过原子沉积工艺在所述氧化铪锆铁电薄膜上沉积厚度为1~3nm的氧化铝电容匹配层;
对所述氧化铪锆铁电薄膜和所述氧化铝电容匹配层进行热处理,以提高铁电性;
将所述二硒化钨半导体转移至所述氧化铝电容匹配层上;
在所述二硒化钨半导体上形成金属铟源电极和金属铟漏电极。
2.根据权利要求1所述的N型二硒化钨负电容场效应晶体管的制备方法,其特征在于,所述通过原子沉积工艺在所述栅电极层上沉积厚度为19~21nm的氧化铪锆铁电薄膜,包括:
通过四(二甲氨基)铪提供铪原子,通过四(二甲氨基)锆提供锆原子,通过水提供氧原子。
3.根据权利要求1或2所述的N型二硒化钨负电容场效应晶体管的制备方法,其特征在于,所述通过原子沉积工艺在所述栅电极层上沉积厚度为19~21nm的氧化铪锆铁电薄膜的温度条件为225~275摄氏度。
4.根据权利要求1所述的N型二硒化钨负电容场效应晶体管的制备方法,其特征在于,所述通过原子沉积工艺在所述氧化铪锆铁电薄膜上沉积厚度为1~3nm的氧化铝电容匹配层,包括:
通过三甲基铝提供铝原子,通过水提供氧原子。
5.根据权利要求1或4所述的N型二硒化钨负电容场效应晶体管的制备方法,其特征在于,所述通过原子沉积工艺在所述氧化铪锆铁电薄膜上沉积厚度为1~3nm的氧化铝电容匹配层的温度条件为275~325摄氏度。
6.根据权利要求1所述的N型二硒化钨负电容场效应晶体管的制备方法,其特征在于,所述对所述氧化铪锆铁电薄膜和所述氧化铝电容匹配层进行热处理的温度条件为475~525摄氏度。
7.根据权利要求6所述的N型二硒化钨负电容场效应晶体管的制备方法,其特征在于,所述对所述氧化铪锆铁电薄膜和所述氧化铝电容匹配层进行热处理的时间条件为55~65秒。
8.根据权利要求6或7所述的N型二硒化钨负电容场效应晶体管的制备方法,其特征在于,所述对所述氧化铪锆铁电薄膜和所述氧化铝电容匹配层进行热处理的环境条件为氮气。
9.根据权利要求1所述的N型二硒化钨负电容场效应晶体管的制备方法,其特征在于,所述栅电极层为P型深掺杂硅基底,所述N型二硒化钨负电容场效应晶体管的制备方法还包括对所述栅电极层进行清洗。
10.一种N型二硒化钨负电容场效应晶体管,其特征在于,包括:
栅电极层;
氧化铪锆铁电薄膜,厚度为19~21nm,设置于所述栅电极层的一面;
氧化铝电容匹配层,厚度为1~3nm,设置于所述氧化铪锆铁电薄膜背向所述栅电极层的一面;
二硒化钨半导体,设置于所述氧化铝电容匹配层背向所述氧化铪锆铁电薄膜的一面;
金属铟源电极,设置于所述二硒化钨半导体背向所述氧化铝电容匹配层的一面;
金属铟漏电极,设置于所述二硒化钨半导体背向所述氧化铝电容匹配层的一面。
11.根据权利要求10所述的N型二硒化钨负电容场效应晶体管,其特征在于,所述栅电极层为P型深掺杂硅基底。
12.根据权利要求10所述的N型二硒化钨负电容场效应晶体管,其特征在于,所述金属铟源电极和所述金属铟漏电极的厚度均为39~41nm。
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