CN113862636B - 一种可自由控制形态的石墨烯超材料cvd制备方法 - Google Patents
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 62
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 59
- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 239000002184 metal Substances 0.000 claims abstract description 28
- 229910052751 metal Inorganic materials 0.000 claims abstract description 28
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 26
- 239000000463 material Substances 0.000 claims abstract description 19
- 239000000945 filler Substances 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 15
- 238000005530 etching Methods 0.000 claims abstract description 14
- 238000005498 polishing Methods 0.000 claims abstract description 5
- 230000007246 mechanism Effects 0.000 claims abstract description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229920002120 photoresistant polymer Polymers 0.000 claims description 2
- 230000008569 process Effects 0.000 claims description 2
- 239000011347 resin Substances 0.000 claims description 2
- 229920005989 resin Polymers 0.000 claims description 2
- 238000000151 deposition Methods 0.000 abstract description 7
- 230000008021 deposition Effects 0.000 abstract description 7
- 230000009286 beneficial effect Effects 0.000 abstract description 3
- 230000001627 detrimental effect Effects 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000012377 drug delivery Methods 0.000 description 1
- 238000009396 hybridization Methods 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0254—Physical treatment to alter the texture of the surface, e.g. scratching or polishing
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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Abstract
本发明公开了一种可自由控制形态的石墨烯超材料CVD制备方法：首先，根据需求设计石墨烯超材料二维结构图案，并生成工程文档；接着，根据所设计图案对所选金属衬底进行刻蚀，注入填充剂填充刻蚀部分，防止石墨烯生长至衬底侧面；然后，对金属衬底进行打磨，磨掉多余填充剂露出金属衬底材料，并使表面平整；最后，运用CVD法生成具备二维微纳机构的石墨烯超材料。本发明具有较低的成本，且不易对石墨烯材料本身造成破坏，确保石墨烯材料完整性，同时，创造了平整的衬底表面，更有利于石墨烯结构沉积。
Description
技术领域
本发明属于新材料技术领域，具体涉及一种可自由控制形态的石墨烯超材料CVD制备方法。
背景技术
超材料指的是一类具有特殊性质的人造材料，这些材料是自然界没有的。它们拥有一些特别的性质，比如让光、电磁波改变它们的通常性质，而这样的效果是传统材料无法实现的。超材料的成分上没有什么特别之处，它们的奇特性质源于其精密的几何结构以及尺寸大小。其中的微结构，大小尺度小于它作用的波长，因此得以对波施加影响。
石墨烯（Graphene）是一种以sp²杂化连接的碳原子紧密堆积成单层二维蜂窝状晶格结构的新材料。石墨烯具有优异的光学、电学、力学特性，在材料学、微纳加工、能源、生物医学和药物传递等方面具有重要的应用前景。
但是，制备石墨烯超材料需要制造具有特定二位结构的石墨烯，但石墨烯化学性质极为稳定化学刻蚀较困难，现有石墨烯二维材料加工发放主要有物理刻蚀方法、CVD沉积法，物理刻蚀方法是运用激光、电子束等高能射线进行刻蚀，CVD法是通过光刻技术在基板表面制备掩膜，然后进行化学气相沉积，最后清洗掩膜，得到需要的石墨烯结构。
然而，运用激光、电子束等高能射线进行刻蚀虽然精度高，但是速度较慢且成本高昂，还会对石墨烯材料造成不可逆损伤，不利于应用至大规模生产。运用掩膜的CVD化学气相沉积方法虽然成本较低，但由于掩膜带来的表面不平整，在一定速度气体流动下不利于石墨烯沉积，掩膜边缘石墨烯结构容易产生缺陷。
发明目的
本发明的目的是为了解决现有石墨烯超材料加工刻蚀复杂、成本高，易损伤的问题，旨在提供一种可自由控制形态的石墨烯超材料CVD制备方法，在保留CVD低成本生成石墨烯优点的同时，提高石墨烯超材料二维结构制备的品质，具有更加可靠、便捷、高精度的特点。
发明内容
本发明提供了一种可自由控制形态的石墨烯超材料CVD制备方法，包括以下步骤：
步骤1：根据需求设计石墨烯超材料二维结构图案，并生成工程文档；
步骤2：根据所设计的石墨烯超材料二维结构图案对所选金属衬底进行刻蚀，注入填充剂填充刻蚀部分，防止石墨烯生长至衬底侧面；
步骤3：对步骤2中所述金属衬底进行打磨，磨掉多余填充剂露出所述金属衬底材料，并使其表面平整；
步骤4：运用CVD法生成具备二维微纳机构的石墨烯超材料。
优选地，所述石墨烯超材料二维结构图案为根据应用场景设计的具备光学、电磁特性的超材料图案。
优选地，步骤2中所述刻蚀采用PCB工艺。
优选地，所述金属衬底为CVD法生成石墨烯时所用衬底，其材质包括铜、镍。
优选地，所述填充剂包括不利于CVD石墨烯生长的树脂、光刻胶材料，其被打磨成平整表面，以防止石墨烯生长至金属衬底刻蚀区域的侧面。
附图说明
图1是不同结构衬底CVD法石墨烯超材料沉积状况示意图。
附图标记：
1- CVD法生成的石墨烯超材料；
2-为金属衬底；
3-不利于石墨烯沉积的填充剂。
实施方式
以下结合附图详细阐述本发明的具体实施方式，本领域技术人员应当明白，此处的实施方式仅是对本发明的示例性说明，而不应被视为对本发明的限定，任何不脱离本发明主旨的等效替代或变动都落入本发明的范围。
本发明提供了一种可自由控制形态的石墨烯超材料CVD制备方法，包括以下步骤：
(1) 根据需求设计石墨烯超材料二维结构图案，并生成工程文档。
(2)运用传统pcb加工工艺，依据设计图案对所选金属衬底进行刻蚀。
(3)注入填充剂填充被刻蚀部分。
(4)对加注填充剂的金属衬底进行打磨，磨掉多余填充剂露出金属衬底材料，并使表面平整。
(5) 运用CVD法生成具备二维微纳机构的石墨烯超材料。
(6)去除衬底及填充剂，得到具备二维微纳结构的石墨烯超材料。
图1是不同结构衬底CVD法石墨烯超材料沉积状况示意图，其中，（1）是CVD法生成的石墨烯超材料；（2）为金属衬底；（3）是不利于石墨烯沉积的填充剂。如图所示，一为本发明所述的具备微纳尺度二维结构的平整金属衬底CVD法生成石墨烯超材料，石墨烯生成状况良好；二为未加注填充剂的金属衬底，石墨烯在刻蚀槽垂直的壁上也存在生成，引入不可控变量，不利于石墨烯超材料的制备；三为不对金属衬底进行刻蚀，直接通过光刻技术在衬底上制备掩膜，然后进行CVD气相沉积，因气相沉积通入甲烷气体具备一定流速，因此，在掩膜边缘石墨烯生成会收到影响，形成缺陷。
与现有技术相比，本发明具有以下优点：
1、通过对金属衬底的刻蚀、涂胶和打磨，创造出了具备微纳尺度二位结构的平整金属衬底，可高精度生长所需结构石墨烯超材料。
2、与激光，电子束等物理刻蚀方法比较，本发明具有较低的成本，且不易对石墨烯材料本身造成破坏，确保石墨烯材料完整性。
3、与金属衬底直接光刻掩膜进行不同形态石墨烯制备的方法相比，本发明创造了平整的衬底表面，更有利于石墨烯结构沉积。具备良好的应用前景。
Claims (3)
1.一种可自由控制形态的石墨烯超材料CVD制备方法，其特征在于，包括以下步骤：
步骤1：根据需求设计石墨烯超材料二维结构图案，并生成工程文档；所述石墨烯超材料二维结构图案为根据应用场景设计的具备光学、电磁特性的超材料图案；
步骤2：根据所设计的石墨烯超材料二维结构图案对所选金属衬底进行刻蚀，注入填充剂填充刻蚀部分，防止石墨烯生长至衬底侧面；所述填充剂包括不利于CVD石墨烯生长的树脂、光刻胶材料，以防止石墨烯生长至金属衬底刻蚀区域的侧面；
步骤3：对步骤2中所述金属衬底进行打磨，磨掉多余填充剂露出所述金属衬底材料，并使其表面平整；
步骤4：运用CVD法生成具备二维微纳机构的石墨烯超材料。
2.根据权利要求1所述的一种可自由控制形态的石墨烯超材料CVD制备方法，其特征在于，步骤2中所述刻蚀采用PCB工艺。
3.根据权利要求1所述的一种可自由控制形态的石墨烯超材料CVD制备方法，其特征在于，所述金属衬底为CVD法生成石墨烯时所用衬底，其材质包括铜、镍。
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| CN110515224A (zh) * | 2019-09-04 | 2019-11-29 | 哈尔滨理工大学 | 一种双带可灵活选择性调控的石墨烯-金属槽超材料太赫兹慢光器件 |
| CN111273462A (zh) * | 2020-03-02 | 2020-06-12 | 江西师范大学 | 光学腔与石墨烯复合结构吸波器 |
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| CN111273462A (zh) * | 2020-03-02 | 2020-06-12 | 江西师范大学 | 光学腔与石墨烯复合结构吸波器 |
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