CN111640651A - 基于离子轰击技术的亚波长表面纳米结构及其制备方法 - Google Patents
基于离子轰击技术的亚波长表面纳米结构及其制备方法 Download PDFInfo
- Publication number
- CN111640651A CN111640651A CN202010063145.1A CN202010063145A CN111640651A CN 111640651 A CN111640651 A CN 111640651A CN 202010063145 A CN202010063145 A CN 202010063145A CN 111640651 A CN111640651 A CN 111640651A
- Authority
- CN
- China
- Prior art keywords
- substrate
- photoresist
- sub
- etching
- wavelength
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002086 nanomaterial Substances 0.000 title claims abstract description 97
- 238000010849 ion bombardment Methods 0.000 title claims abstract description 23
- 238000005516 engineering process Methods 0.000 title claims abstract description 18
- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 87
- 239000000758 substrate Substances 0.000 claims abstract description 52
- 238000005530 etching Methods 0.000 claims abstract description 44
- 238000000034 method Methods 0.000 claims abstract description 31
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 29
- 238000012546 transfer Methods 0.000 claims abstract description 6
- 239000011248 coating agent Substances 0.000 claims abstract description 4
- 238000000576 coating method Methods 0.000 claims abstract description 4
- 238000001020 plasma etching Methods 0.000 claims description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 17
- 239000005350 fused silica glass Substances 0.000 claims description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 11
- 239000001301 oxygen Substances 0.000 claims description 11
- 229910052760 oxygen Inorganic materials 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 238000001312 dry etching Methods 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 5
- 238000009616 inductively coupled plasma Methods 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 229910044991 metal oxide Inorganic materials 0.000 claims description 4
- 150000004706 metal oxides Chemical class 0.000 claims description 4
- 238000001039 wet etching Methods 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 238000000992 sputter etching Methods 0.000 claims description 3
- 229920001486 SU-8 photoresist Polymers 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 229910052593 corundum Inorganic materials 0.000 claims description 2
- 238000010894 electron beam technology Methods 0.000 claims description 2
- 238000001900 extreme ultraviolet lithography Methods 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 14
- 230000008569 process Effects 0.000 abstract description 5
- 238000012545 processing Methods 0.000 abstract description 3
- 239000007787 solid Substances 0.000 abstract description 2
- 230000001939 inductive effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 21
- 239000007789 gas Substances 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 6
- 238000001723 curing Methods 0.000 description 5
- 238000004528 spin coating Methods 0.000 description 4
- 238000000609 electron-beam lithography Methods 0.000 description 3
- 230000001788 irregular Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000025 interference lithography Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 108091060218 miR-701 stem-loop Proteins 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001127 nanoimprint lithography Methods 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- -1 such as: au Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0279—Ionlithographic processes
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/3086—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Plasma & Fusion (AREA)
- Life Sciences & Earth Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Drying Of Semiconductors (AREA)
- Diffracting Gratings Or Hologram Optical Elements (AREA)
Abstract
一种基于离子轰击技术的亚波长表面纳米结构及其制备方法,该制备方法包括:在一基底上涂覆光刻胶,经固化得到光刻胶薄膜样品;对所述光刻胶薄膜样品进行离子束轰击,在光刻胶表面形成亚波长纳米结构;刻蚀去除所述亚波长纳米结构底层的剩余光刻胶,将所述光刻胶薄膜样品刻蚀至基底,得到具有亚波长纳米结构的光刻胶掩模;将所述光刻胶掩模的亚波长纳米结构转移到基底上,去除图形转移后的剩余光刻胶掩模,得到基底上的亚波长表面纳米结构。本发明利用离子轰击技术在固体表面诱导产生自组织纳米结构的原理并结合掩模刻蚀方法,可在多种材料表面制备亚波长表面纳米结构,具有特征尺寸小、工艺简单、加工效率高的优势。
Description
技术领域
本发明属于表面纳米结构制作的技术领域,具体涉及一种基于离子轰击技术的亚波长表面纳米结构及其制备方法。
背景技术
亚波长表面纳米结构具有优异的光学特性(如减反、增透和偏振),超疏水性和磁各向异性,增强材料的光吸收和光电转换效率等,在光电子,磁存储,太阳能电池和特殊功能膜等领域有非常广泛的应用。但是受限于昂贵的生产成本和低的生产效率,远不能满足市场需求,因此迫切需要简单、高效、低成本的亚波长纳米结构制备方法。
目前亚波长表面纳米结构的制作方法主要有全息光刻,纳米压印光刻,湿法腐蚀及成本较高的聚焦离子束(FIB)和电子束光刻(EBL)等。但是这些方法都存在明显的局限性,例如,光刻方法受光源和衍射极限等的限制很难制作特征尺寸低于200nm表面纳米结构,而FIB和EBL则受限于高昂的成本,较低的加工效率和比较小的图形面积不适于大规模的生产。为克服这些问题,研究人员近年来又提出了一种反应离子刻蚀(RIE)制备亚波长表面纳米结构的方法,该方法通过选择与熔石英(SiO2)相适应的刻蚀气体,适当地控制气体比例和刻蚀参数,就能够通过一次刻蚀直接在SiO2表面获得随机分布的亚波长纳米结构,显著地提高了SiO2的透过率。但是该方法有很强的针对性,即要求材料与气体之间的严格匹配,很难将其应用于其他材料。
随着科技的进步与发展,亚波长表面纳米结构的应用也越来越广泛。例如要求高透射率的大口径的光学透镜,薄膜太阳能电池中要求低反射和高的能量转换效率,以及先进的材料表征等领域都对亚波长表面纳米结构的尺寸和产量有着更高的要求,而现有的加工方法无法满足这些需求。
低能离子束轰击(ion bombardment,IB)诱导产生自组织表面纳米结构是近年来新兴起的一种制作技术,该方法不受材料种类的限制,能够在金属、金属氧化物、半导体、绝缘体、玻璃、聚合物、晶体和非晶体等多种材料表面诱导产生自组织纳米结构,而且通过改变离子能量、入射角、刻蚀时间等实验参数还能实现对表面纳米结构形貌的调控,比较典型的有纳米点、纳米孔和纳米波纹等结构。然而采用低能离子束轰击(IB)所产生的自组织纳米结构受限于材料本身的性质,刻蚀高宽比(振幅/周期)往往小于0.5甚至更低,该自组织纳米结构在应用时也具有一定的局限性。
发明内容
有鉴于此,本发明的主要目的在于提出一种基于离子轰击技术的亚波长表面纳米结构及其制备方法,以期至少部分地解决上述提及的技术问题。
为实现上述目的,本发明的技术方案如下:
作为本发明的一个方面,提供了一种基于离子轰击技术的亚波长表面纳米结构的制备方法,包括以下步骤:在一基底上涂覆光刻胶,经固化得到光刻胶薄膜样品;对所述光刻胶薄膜样品进行离子束轰击,在光刻胶表面形成亚波长纳米结构;刻蚀去除所述亚波长纳米结构底层的剩余光刻胶,将所述光刻胶薄膜样品刻蚀至基底,得到具有亚波长纳米结构的光刻胶掩模;将所述光刻胶掩模的亚波长纳米结构转移到基底上,去除图形转移后的剩余光刻胶掩模,得到基底上的亚波长表面纳米结构。
作为本发明的另一个方面,提供了一种亚波长表面纳米结构,为通过如上所述的制备方法在基底表面得到。
基于上述技术方案,本发明的基于离子轰击技术的亚波长表面纳米结构及其制备方法具有以下有益效果的至少之一或之一部分:
1、本发明利用离子轰击技术在固体表面诱导产生自组织纳米结构的原理并结合掩模刻蚀方法,实现了一种基于离子轰击技术的亚波长表面纳米结构制备;与“全息光刻”技术相比具有工艺简单、面积大、成本低、效率高等优势,极大地提高了加工效率,而且还能显著降低亚波长表面纳米结构的特征尺寸;
2、本发明利用离子轰击技术制备具有亚波长表面纳米结构的光刻胶掩模,能够通过调控离子束入射角、离子能量等参数,实现准周期性纳米结构的特征尺寸在30~220nm范围内可调。
3、本发明利用具有亚波长表面纳米结构的光刻胶为掩模,结合不同的刻蚀工艺可以在多种材料表面获得亚波长表面纳米结构,如:Au、Ag、TiO2、ZnO、Si、玻璃(如:SiO2)等,并且相比于采用低能离子束轰击所产生的自组织纳米结构,能够获得提高的图形高宽比。
附图说明
图1是本发明基于离子轰击技术的亚波长表面纳米结构制作工艺流程图;
图2是本发明实施例1基于离子轰击技术的亚波长表面纳米结构制作示意图;
图3是本发明实施例1离子轰击诱导产生的光刻胶表面纳米结构掩模及其截面轮廓;
图4是本发明实施例1利用氧等离子体刻蚀去除底部光刻胶后光刻胶纳米结构掩模及其截面轮廓;
图5是本发明实施例1使用CHF3反应离子束刻蚀后熔石英表面亚波长表面纳米结构及其截面轮廓;
图6是本发明对比例1离子轰击诱导产生的光刻胶表面纳米结构掩模及其截面轮廓;
图7是本发明对比例1利用Ar离子物理刻蚀进行图形转移后,熔石英表面亚波长表面纳米结构及其截面轮廓。
上述附图中,附图标记含义如下:
1表示熔石英基底;
2表示旋涂后的光刻胶薄膜样品;
3表示具有亚波长纳米结构的光刻胶薄膜样品;
4表示刻蚀到底的具有亚波长纳米结构的光刻胶掩模;
5表示具有一定深度亚波长纳米结构的熔石英表面。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚明白,以下结合具体实施例,并参照附图,对本发明作进一步的详细说明。
本发明基于低能离子轰击(IB)能够调控形成纳米结构的特性,提出了一种新型的基于离子轰击技术的亚波长表面纳米结构及其制备方法,与传统的光刻、FIB、EBL和RIE等技术相比,该方法具有工艺简单,成本低,效率高,大面积和适用范围广等显著优势,是一种非常有潜力的亚波长纳米结构制备技术。
根据本发明的一些实施例,提供了一种基于离子轰击技术的亚波长纳米结构及其制备方法。该方法工艺简单、成本低、效率高、面积大,能够通过改变离子束轰击和反应离子刻蚀的参数,来调控表面纳米结构的特征尺寸。如图1所示,该方法包括以下步骤:
步骤1:在一基底上涂覆光刻胶,经固化得到光刻胶薄膜样品;
在本发明的一些实施例中,本步骤使用旋涂的方法在熔石英基底上制备AZMiR701(14cps)光刻胶薄膜样品,并在90~120℃下烘烤15min以上,更优选为30min使其固化,厚度为400~1000nm;当然并不局限于此。
在其他实施例中,基底的材质还可选用硅基底、氮化硅基底、玻璃基底(如熔石英基等)、金属基底如Au、Ag、金属氧化物基底如TiO2、ZnO、Al2O3等。光刻胶的涂覆方式还可选用本领域所熟知的其他方式例如喷涂等;更优选为旋涂,可以得到高度均匀的膜层,且可较为精确地控制膜层厚度。
在其他实施例中,使用的光刻胶的材质还可选用AZ系列光刻胶、SU-8光刻胶、电子束光刻胶或极紫外光刻用光刻胶等有机光刻胶;更优选AZ系列光刻胶。
在其他实施例中,光刻胶的固化方法已为本领域所熟知,可以根据实际应用以及选用的光刻胶等要求进行调整,固化温度可以为90~120℃之间的任意值,例如100℃、110℃、120℃等,更优选90℃;固化时间优选在15min以上,更优选在25min以上,并无特别限制。
步骤2:对该光刻胶薄膜样品进行离子束轰击,在光刻胶表面形成亚波长纳米结构。
发明人发现,通过调整离子束参数可以对亚波长纳米结构的形貌以及特征尺寸进行调控,实现在光刻胶上形成纳米波纹或纳米点等纳米结构,并且纳米结构特征尺寸可调。
该离子束参数包括但不限于:离子束入射角θ,取值为30°~70°,更优选为50°~60°;离子能量E,取值为100eV~1000eV,优选为200eV~800eV,更优选为300eV~400eV;离子轰击时间t,取值为10~70min,优选为30~50min;束流密度J,取值为200~500μA/cm2。由此可以调整得到准周期性的纳米波纹结构,周期为30~220nm。
在本发明的一些实施例中,本步骤主要使用市售的离子束刻蚀机实现,具体可将步骤1制备好的光刻胶薄膜样品以一定的方式固定在离子束刻蚀机腔体的样品台上,具体可以通过调整光刻胶薄膜样品的固定角度从而调整离子束相对于光刻胶薄膜样品的入射角度,在真空条件下进行离子束轰击诱导在光刻胶表面产生具有亚波长纳米结构。
刻蚀机离子源为50mm以上口径的离子源,以便于一次离子轰击以制备大面积的亚波长纳米结构,离子源类型例如可以是考夫曼型(Kaufman)离子源(离子束发散度约15°~20°)、电感耦合射频(IC-RF)离子源或电子回旋共振(ECR)离子源;由此离子束在真空环境下将刻蚀气体如氦(He)、氖(Ne)、氩(Ar)、氪(Kr)、氙(Xe)等通过刻蚀机的离子源而产生。
步骤3:刻蚀去除亚波长纳米结构底层的剩余光刻胶,将光刻胶薄膜样品刻蚀至基底,也即将光刻胶纳米结构之间的基底材料暴露出来,得到具有亚波长纳米结构的光刻胶掩模。
本步骤主要使用氧等离子体刻蚀完成,产生氧等离子体的方式有多种,例如基于反应离子(RIE)刻蚀系统、基于电感耦合(ICP)等离子体刻蚀系统或电子回旋共振(ECR)等离子体刻蚀系统等产生。
在本发明的一些实施例中,本步骤将具有亚波长纳米结构的光刻胶薄膜样品水平放置在通入氧气的反应离子刻蚀机中,使用基于反应离子刻蚀机产生的氧等离子体刻蚀去除光刻胶纳米结构底层的剩余光刻胶。该反应离子刻蚀机市售可得,通过调整氧等离子刻蚀的射频功率50~550W,腔体压强10~100mTorr以及刻蚀时间t等工作参数,从而调整光刻胶掩模的占宽比为0.1~0.5。占宽比需要根据具体的要求来确定,若占宽比过大,会影响后续反应离子刻蚀中基底的刻蚀速率并导致较大的占宽比和低的高宽比,若占宽比过小,在后续反应离子刻蚀基底时,会导致光刻胶掩模的横向快速收缩,因而无法获得高深度的亚波长纳米结构。
步骤4:将光刻胶掩模的亚波长纳米结构转移到基底上。
本步骤可以通过干法刻蚀或湿法刻蚀等图形转移技术刻蚀基底而完成,具体可以根据基底材料来选择合适的方式。干法刻蚀包括但不限于反应离子刻蚀、电感耦合等离子体刻蚀、电子回旋共振等离子体刻蚀或离子溅射刻蚀等。
需要说明的是,对不同的基底材料本步骤需要选用与基底材料相适应的刻蚀方式,如通过物理刻蚀或其他刻蚀方式来进行,具体主要参数包括工作气体,入射离子能量等。
在本发明的一些实施例中,本步骤将具有亚波长纳米结构的光刻胶掩模放置在通入刻蚀气体的反应离子刻蚀机中,利用具有亚波长纳米结构的光刻胶掩模进行刻蚀;可以理解,对于不同的基底材料可以选用相应不同的刻蚀气体来进行刻蚀,以熔石英为例,可以选择CHF3气体,但并不局限于此。
该反应离子刻蚀机市售可得,通过调整刻蚀时间等参数,从而调整基底的亚波长纳米结构深度为200nm以下,能够实现刻蚀高宽比为0.5~2,而自组织纳米结构的高宽比通常小于0.5,由此本发明可以更为灵活地调节刻蚀高宽比。
步骤5:最后清洗去除残余光刻胶,即得到基底上的亚波长表面纳米结构。
下面将结合附图和具体实施例对本发明进行具体的说明。应当理解,此处所描述的具体实施例是用以解释本发明,并不限定于本发明。
实施例1:
本具体实施方式是基于离子轰击技术在30×30mm2的熔石英表面制作亚波长表面纳米结构,具体步骤如图1所示:
步骤(1)使用旋涂的方法在熔石英基底1上制备AZ MiR701(14cps)光刻胶薄膜样品2,厚度为600nm,并在90℃下烘烤30min使其固化,如图2中(a)所示;
步骤(2)将旋涂后的光刻胶薄膜样品2,以50°的倾角放置并固定在型号为LKJ-1C-D-150的离子束刻蚀机腔体的样品台上,利用能量为400eV的Ar离子束,轰击25min诱导产生具有亚波长纳米结构的光刻胶薄膜样品3,周期约93nm,高宽比约0.27,占宽比约0.6,如图2中(b)所示,其AFM形貌和断面图如图3所示;
步骤(3)将具有亚波长表面纳米结构的光刻胶薄膜样品3水平放置在通入氧气的OXFORD Instruments反应离子刻蚀机中,使用功率为100W的氧等离子体刻蚀去除光刻胶纳米结构底层的剩余光刻胶,如图2中(c)所示,其AFM形貌和断面图如图4所示,周期约103nm,高宽比约0.33,占宽比约0.5;
步骤(4)将刻蚀到底的具有亚波长纳米结构的光刻胶掩模4放置在通入CHF3气体的反应离子刻蚀机中,利用刻蚀到底的具有亚波长纳米结构的光刻胶掩模4对熔石英基底1进行刻蚀,刻蚀深度约为140nm,周期约100~220nm,高宽比约0.6~1,如图2中(d)所示,其AFM形貌和断面图如图5所示;
步骤(5)最后清洗去除残余光刻胶,即得到具有一定深度亚波长表面纳米结构的熔石英表面5,高宽比约0.8。
对比例1
对比例1与实施例1的区别在于步骤(3)和(4)的具体操作。具体而言,具有亚波长表面纳米结构的光刻胶薄膜样品3,其周期约110nm,高宽比约0.33,AFM形貌和断面图如图6所示。将其以50°的倾角放置并固定在型号为LKJ-1C-D-150的离子束刻蚀机腔体的样品台上,利用能量为400eV的Ar离子束刻蚀10min。在熔石英表面产生不规则的亚波长纳米结构,其周期大于200纳米,平均高宽比低于0.15,AFM形貌和断面图如图7所示。
与实施例1相比,对比例1中没有使用氧等离子体刻蚀对光刻胶掩模进行修饰,没有使用对光刻胶和熔石英刻蚀具有选择性的反应离子刻蚀。由此在不能得到如实施例1中所示的具有亚波长纳米结构的光刻胶掩模的情况下,对比例1所获得的熔石英表面亚波长纳米结构,在形状上很不规则,周期显著增加,高宽比非但没有提高反而显著降低,因此对比例1方法不适宜进行图形转移。
以上所述的具体实施例,对本发明的目的、技术方案和有益效果进行了进一步详细说明,应理解的是,以上所述仅为本发明的具体实施例而已,并不用于限制本发明,凡在本发明的精神和原则之内,所做的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。
Claims (10)
1.一种基于离子轰击技术的亚波长表面纳米结构的制备方法,其特征在于,包括以下步骤:
在一基底上涂覆光刻胶,经固化得到光刻胶薄膜样品;
对所述光刻胶薄膜样品进行离子束轰击,在光刻胶表面形成亚波长纳米结构;
刻蚀去除所述亚波长纳米结构底层的剩余光刻胶,将所述光刻胶薄膜样品刻蚀至基底,得到具有亚波长纳米结构的光刻胶掩模;
将所述光刻胶掩模的亚波长纳米结构转移到基底上,去除图形转移后的剩余光刻胶掩模,得到基底上的亚波长表面纳米结构。
2.根据权利要求1所述的制备方法,其特征在于,所述亚波长纳米结构为纳米波纹,周期为30~220nm。
3.根据权利要求1所述的制备方法,其特征在于,所述离子束轰击时的离子束参数包括:
离子束入射角θ,取值为30°~70°;离子能量E,取值为100eV~1000eV;离子轰击时间t,取值为10~70min;束流密度J,取值为200~500μA/cm2。
4.根据权利要求1所述的制备方法,其特征在于,通过氧等离子体刻蚀去除所述亚波长纳米结构底层的剩余光刻胶;
作为优选,所述氧等离子体基于反应离子刻蚀系统、电感耦合等离子体刻蚀系统或电子回旋共振等离子体刻蚀系统产生;
作为优选,在氧等离子体刻蚀时,调整所述光刻胶掩模的占宽比为0.1~0.5。
5.根据权利要求1所述的制备方法,其特征在于,通过干法刻蚀或湿法刻蚀基底完成将所述光刻胶掩模的亚波长纳米结构转移到基底上的步骤。
作为优选,在干法刻蚀或湿法腐蚀时,调整所述基底的亚波长纳米结构的刻蚀深度为200nm以下。
6.根据权利要求5所述的制备方法,其特征在于,所述干法刻蚀选自反应离子刻蚀、电感耦合等离子体刻蚀、电子回旋共振等离子体刻蚀或离子溅射刻蚀。
7.根据权利要求1所述的制备方法,其特征在于,所述基底选自玻璃基底、硅基底、氮化硅基底、金属基底和金属氧化物基底中的一种,其中所述玻璃基底优选为熔石英,所述金属基底优选选自Au、Ag、Cu、Al或Fe基底,金属氧化物基底优选为TiO2、ZnO或Al2O3基底。
8.根据权利要求1所述的制备方法,其特征在于,所述光刻胶选自AZ系列光刻胶、SU-8光刻胶、电子束光刻胶和极紫外光刻用光刻胶中的一种。
9.一种亚波长表面纳米结构,其特征在于,通过如权利要求1至8中任一项所述的制备方法在基底表面得到。
10.根据权利要求9所述的亚波长表面纳米结构,其特征在于,所述亚波长表面纳米结构的高宽比为0.5~2。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202010063145.1A CN111640651A (zh) | 2020-01-19 | 2020-01-19 | 基于离子轰击技术的亚波长表面纳米结构及其制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202010063145.1A CN111640651A (zh) | 2020-01-19 | 2020-01-19 | 基于离子轰击技术的亚波长表面纳米结构及其制备方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN111640651A true CN111640651A (zh) | 2020-09-08 |
Family
ID=72332825
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202010063145.1A Pending CN111640651A (zh) | 2020-01-19 | 2020-01-19 | 基于离子轰击技术的亚波长表面纳米结构及其制备方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN111640651A (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112158798A (zh) * | 2020-09-18 | 2021-01-01 | 中国科学技术大学 | 利用双层材料制备有序自组织纳米结构的方法 |
CN113387318A (zh) * | 2021-06-11 | 2021-09-14 | 中国科学技术大学 | 一种基于纳米环形阵列的近红外带通滤波器及制备方法 |
CN115304022A (zh) * | 2022-07-07 | 2022-11-08 | 武汉大学 | 基于超低能团簇离子束自组装制备功能纳米结构的方法 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6482742B1 (en) * | 2000-07-18 | 2002-11-19 | Stephen Y. Chou | Fluid pressure imprint lithography |
US20040120644A1 (en) * | 2000-07-18 | 2004-06-24 | Chou Stephen Y | Method of making subwavelength resonant grating filter |
CN101158809A (zh) * | 2007-11-20 | 2008-04-09 | 中国科学院光电技术研究所 | 应用聚苯乙烯球进行聚焦光刻成形亚波长微纳结构 |
CN101206411A (zh) * | 2007-11-16 | 2008-06-25 | 中国科学院光电技术研究所 | 采用聚焦光刻成形亚波长微纳结构的制作方法 |
US20080164637A1 (en) * | 1995-11-15 | 2008-07-10 | Chou Stephen Y | Release surfaces, particularly for use in nanoimprint lithography |
CN105084305A (zh) * | 2015-06-17 | 2015-11-25 | 中国科学院微电子研究所 | 一种纳米结构及其制备方法 |
CN107037515A (zh) * | 2017-05-19 | 2017-08-11 | 中国科学技术大学 | 一种用于强激光系统中光束采样光栅的增透减反方法 |
CN110244514A (zh) * | 2019-07-01 | 2019-09-17 | 中国科学技术大学 | 一种表面具有纳米孔结构的光刻胶及其制备方法 |
-
2020
- 2020-01-19 CN CN202010063145.1A patent/CN111640651A/zh active Pending
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080164637A1 (en) * | 1995-11-15 | 2008-07-10 | Chou Stephen Y | Release surfaces, particularly for use in nanoimprint lithography |
US6482742B1 (en) * | 2000-07-18 | 2002-11-19 | Stephen Y. Chou | Fluid pressure imprint lithography |
US20040120644A1 (en) * | 2000-07-18 | 2004-06-24 | Chou Stephen Y | Method of making subwavelength resonant grating filter |
CN101206411A (zh) * | 2007-11-16 | 2008-06-25 | 中国科学院光电技术研究所 | 采用聚焦光刻成形亚波长微纳结构的制作方法 |
CN101158809A (zh) * | 2007-11-20 | 2008-04-09 | 中国科学院光电技术研究所 | 应用聚苯乙烯球进行聚焦光刻成形亚波长微纳结构 |
CN105084305A (zh) * | 2015-06-17 | 2015-11-25 | 中国科学院微电子研究所 | 一种纳米结构及其制备方法 |
CN107037515A (zh) * | 2017-05-19 | 2017-08-11 | 中国科学技术大学 | 一种用于强激光系统中光束采样光栅的增透减反方法 |
CN110244514A (zh) * | 2019-07-01 | 2019-09-17 | 中国科学技术大学 | 一种表面具有纳米孔结构的光刻胶及其制备方法 |
Non-Patent Citations (1)
Title |
---|
陈海波等: "二维亚波长结构石英紫外压印模板的制备", 《真空科学与技术学报》 * |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112158798A (zh) * | 2020-09-18 | 2021-01-01 | 中国科学技术大学 | 利用双层材料制备有序自组织纳米结构的方法 |
CN112158798B (zh) * | 2020-09-18 | 2022-05-17 | 中国科学技术大学 | 利用双层材料制备有序自组织纳米结构的方法 |
CN113387318A (zh) * | 2021-06-11 | 2021-09-14 | 中国科学技术大学 | 一种基于纳米环形阵列的近红外带通滤波器及制备方法 |
CN113387318B (zh) * | 2021-06-11 | 2024-02-09 | 中国科学技术大学 | 一种基于纳米环形阵列的近红外带通滤波器及制备方法 |
CN115304022A (zh) * | 2022-07-07 | 2022-11-08 | 武汉大学 | 基于超低能团簇离子束自组装制备功能纳米结构的方法 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN111640651A (zh) | 基于离子轰击技术的亚波长表面纳米结构及其制备方法 | |
TWI472810B (zh) | 光柵的製備方法 | |
US7758794B2 (en) | Method of making an article comprising nanoscale patterns with reduced edge roughness | |
CN102910579B (zh) | 一种可提高图形深宽比的纳米压印方法及其产品 | |
US8951428B2 (en) | Method for the fabrication of periodic structures on polymers using plasma processes | |
CN111308597A (zh) | 一种亚微米结构光栅的制备方法 | |
KR101064900B1 (ko) | 패턴 형성방법 | |
CN110174818A (zh) | 基板的纳米压印制备方法及其基板 | |
CN112723305B (zh) | 一种超表面的制作方法 | |
Amalathas et al. | Periodic upright nanopyramid fabricated by ultraviolet curable nanoimprint lithography for thin film solar cells | |
CN112596137B (zh) | 一种高损伤阈值的多层介质膜矩形衍射光栅制备方法 | |
CN110244514B (zh) | 一种表面具有纳米孔结构的光刻胶及其制备方法 | |
KR101369736B1 (ko) | 나노렌즈어레이몰드의 제조방법 및 그 방법에 의해 제조된 몰드를 이용한 나노렌즈어레이의 제조방법 | |
CN115367698B (zh) | 一种新型InP纳米线阵列及其制备方法 | |
RU2300158C1 (ru) | Способ формирования субмикронной и нанометровой структуры | |
CN111591954B (zh) | 在光刻胶表面制备亚波长纳米结构的方法 | |
CN112158798B (zh) | 利用双层材料制备有序自组织纳米结构的方法 | |
Amalathas et al. | Fabrication and replication of periodic nanopyramid structures by laser interference lithography and UV nanoimprint lithography for solar cells applications | |
CN108502840B (zh) | 一种高效率制备环状纳米间隙有序阵列的方法 | |
CN101834407A (zh) | 利用纳米压印技术制备面发射表面等离子体激光器的方法 | |
Quan et al. | Dielectric metalens by multilayer nanoimprint lithography and solution phase epitaxy | |
JP2012048030A (ja) | 基板の製造方法 | |
JP2004137105A (ja) | 表面微細構造体とその製造方法 | |
CN111675191B (zh) | 制备高度上连续可调的三维纳米结构的方法 | |
CN114296168B (zh) | 一种利用宽光栅纳米压印模板制作变周期窄光栅的方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
RJ01 | Rejection of invention patent application after publication | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20200908 |