WO2019006799A1 - 纳米线栅偏光片的制作方法 - Google Patents

纳米线栅偏光片的制作方法 Download PDF

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WO2019006799A1
WO2019006799A1 PCT/CN2017/095037 CN2017095037W WO2019006799A1 WO 2019006799 A1 WO2019006799 A1 WO 2019006799A1 CN 2017095037 W CN2017095037 W CN 2017095037W WO 2019006799 A1 WO2019006799 A1 WO 2019006799A1
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substrate
metal
array
nanoimprint
nano
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PCT/CN2017/095037
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English (en)
French (fr)
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侯俊
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深圳市华星光电技术有限公司
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Priority to US15/569,714 priority Critical patent/US20190011770A1/en
Publication of WO2019006799A1 publication Critical patent/WO2019006799A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/30—Polarising elements
    • G02B5/3025—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
    • G02B5/3058—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state comprising electrically conductive elements, e.g. wire grids, conductive particles
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133528—Polarisers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping

Definitions

  • the invention belongs to the technical field of LCD manufacturing, and in particular to a method for fabricating a nanowire grid polarizer.
  • LCD Liquid Crystal Display
  • the polarizing plate absorbs the light in the direction perpendicular to the polarizing axis, and only allows the light in the direction of the polarizing axis to pass, thereby converting the natural light into linearly polarized light, but this will lose more than 50% of the light.
  • the overall transmittance of the LCD liquid crystal display is greatly reduced.
  • the nanowire grid can transmit the incident light perpendicular to the wire grid direction by the direction of the electric field perpendicular to the wire grid direction, and based on the working principle, the reflected light can be reused by adding an antireflection film or the like. Therefore, the ability of the nanowire grid polarizer to transmit incident light is much larger than that of the conventional polarizer, and its transmittance is over 90%, and the contrast ratio is also 10,000:1, which can greatly improve the transmittance of the LCD liquid crystal display. Contrast meets the needs of high penetration and high contrast in the market.
  • the polarization characteristics of the nanowire grid are determined by the wire grid material and its structure.
  • the structural parameters of the wire grid mainly include the line width, the depth of the wire grid, and the aspect ratio.
  • the wire grid period is sufficiently small and reaches a wavelength range much smaller than the incident light, the wire grid can reflect almost all of the electric field vector component vibrations parallel to the wire grid, so that the light of the electric field vector component perpendicular to the wire grid is transmitted almost completely.
  • the smaller the wire grid period the better the polarization effect. Therefore, how to obtain a sufficiently small wire grid period and a suitable aspect ratio is the key to preparing a nanowire grid.
  • the mainstream preparation method utilizes dry etching.
  • a method for manufacturing a nanowire grid polarizer comprising the steps of:
  • the nanoimprint assembly is paired with the conductive substrate, and the photoresist material is cured on the surface of the conductive substrate, and the nanoimprint template is removed on the surface of the conductive substrate.
  • step S2 includes:
  • the nanoimprint assembly is paired with the conductive substrate, and the nanoimprint assembly is pressed at a temperature higher than a melting point of the photoresist material to make the photoresist material and the conductive Substrate contact;
  • the nanoimprint template is removed, and the nano-resist array is formed on a surface of the conductive substrate.
  • the conductive substrate includes a substrate and a conductive layer disposed on the substrate.
  • the substrate is selected from any one of a glass substrate, a PI film, or a PET film; and the material of the conductive layer is selected from any one of ITO, graphene, and a transparent conductive material.
  • step S3 includes:
  • the nano-photoresist array is removed, and the nanowire grid is formed on a surface of the conductive substrate to obtain the nanowire grid polarizer; wherein the nanowire grid material
  • the reduction potential is higher than the reduction potential of the material of the conductive layer.
  • the electrolyte contains an inorganic salt of the metal, a surfactant, and a leveling agent.
  • the material of the conductive layer is ITO
  • the material of the anode is Au
  • the inorganic salt of the metal is AuCl 3
  • the material of the conductive layer is ITO
  • the material of the anode is Ag
  • the inorganic salt of the metal is AgCl.
  • the surface of the nanoimprint template has a second gap array, and the photoresist material is filled in the second gap array to form the nanoimprint assembly.
  • the invention adopts nanoimprint technology to fabricate a nano-resist array on a conductive substrate, and then deposits metal in the first gap array formed by the nano-resist array by electrodeposition to form a nanowire grid, after removing the nano-resist array That is, the nanowire grid polarizer is obtained; the manufacturing method is simple in process and low in energy consumption. According to the manufacturing method of the present invention, the etching process in the conventional nanoimprinting is avoided, and different materials and metals of different sizes can be deposited according to requirements, and the growth rate of the metal can be controlled by adjusting the electrodeposition, and the short cycle is easily obtained. A nanowire grid with a high aspect ratio, so that when the nanowire grid polarizer is applied to an LCD, a better polarization effect can be obtained.
  • FIG. 1 is a flow chart showing the steps of a method of fabricating a nanowire grid polarizer according to an embodiment of the present invention
  • FIGS. 2 to 9 are process flow diagrams of a method of fabricating a nanowire grid polarizer in accordance with an embodiment of the present invention.
  • the invention provides a method for fabricating a nanowire grid polarizer. Referring specifically to FIG. 1, the method comprises the following steps:
  • Step S1 providing a nanoimprint template 3, and filling the nanoimprint template 3 with the photoresist material 21a to obtain a nanoimprint assembly.
  • the surface of the nanoimprint template 3 has a second gap array formed by a plurality of second voids 31, and the photoresist material 21a is filled in the second gap array to form a nanoimprint assembly; as shown in FIG. 2 and 3 is shown.
  • Step S2 The nanoimprint assembly and the conductive substrate are paired, the photoresist material 21a is cured on the surface of the conductive substrate, the nanoimprint template 3 is removed, and the nano-photoresist array 21 is formed on the surface of the conductive substrate.
  • the conductive substrate includes a substrate 11 and a conductive layer 12 formed on the substrate 11; the substrate 11 may be selected from any one of a glass substrate, a PI film, or a PET film, and the material of the conductive layer 12 may be selected from ITO, graphite. Any one of the olefin and the transparent conductive material; the selection of the substrate 11 and the conductive layer 12 will not be described herein, and those skilled in the art can refer to the prior art.
  • the nano-resist array 21 is formed by a plurality of nano-resistive arrays, and a first gap array composed of a plurality of first voids 22 is formed between the nano-resistors.
  • the nanophotoresist array is preferably formed by the following method: (1) aligning the nanoimprint assembly with the conductive substrate and applying pressure to the nanoimprint assembly at a temperature higher than the melting point of the photoresist material 21a. , the photoresist material 21a is brought into contact with the conductive layer 12 in the conductive substrate; (2) the temperature is adjusted to be lower than the melting point of the photoresist material 21a, and the photoresist material 21a is cured on the surface of the conductive layer 12; (3) Removing the nanoimprint template 3, forming a nano-photoresist array 21 on the surface of the conductive substrate; see in particular in FIGS. 4-6, in FIG. 5, the arrow indicates the direction of application of the pressure F at the time of pressing, in FIG. The arrow indicates the removal direction of the nanoimprint template 3.
  • Step S3 depositing a metal 13a in the first gap array by electrodeposition, removing the nano-resist array 21, and forming a nanowire grid 13 on the surface of the conductive substrate to obtain a nanowire grid polarizer.
  • the electrolyte contains an inorganic salt of the metal, a surfactant, and a leveling agent.
  • the process of electrodeposition is described by taking the material of the conductive layer 12 as ITO, the material of the anode 41 as Au, and the inorganic salt of the metal as AuCl 3 as an example; wherein the reduction potential of In in the ITO is -0.3382 V, reduction of Sn The potential is -0.1364V, and the reduction potential of Au is 1.42V.
  • the Au anode undergoes an oxidation reaction, and the Au atom loses electrons to become Au 3+ and enters the electrolyte 42.
  • Au 3+ in the electrolyte 42 obtains an electron reduction reaction on the surface of the ITO cathode to form a metal Au nucleus and grows and fills in the first void 22, and after the metal Au is deposited, the conductive substrate is made of an electrolyte.
  • the nano-resistor array 21 of the surface is taken out and removed, and the nanowire grid 13 is obtained.
  • the substrate 11 and the conductive layer 12 and the nanowire grid 13 on the surface thereof constitute a nanowire grid polarizer.
  • the material of the conductive layer 12 is ITO
  • the material of the anode 41 may also be Ag (reduction potential is 0.7996V), and the inorganic salt of the corresponding metal is AgCl. Therefore, in the process of electrodeposition, it is necessary to control the reduction potential of the material of the nanowire grid 13 to be higher than the reduction potential of the material of the conductive layer 12.
  • the method for fabricating the nanowire grid polarizer according to the embodiment of the present invention is simple in process and low in energy consumption.
  • the manufacturing method avoids the etching process in the conventional nanoimprinting, and can deposit different materials, different sizes of metal 13a according to requirements, and control the growth rate of the metal 13a by adjusting the electrodeposition parameters, and the preparation has different periods.
  • the nano-imprint template 3 of the second gap array of different depths can obtain the short-period, high-aspect ratio nanowire grid 13, so that when the nanowire grid polarizer is applied to the LCD, better polarization can be obtained. effect.

Abstract

一种纳米线栅偏光片的制作方法，包括步骤：S1、提供一纳米压印模板（3），并采用光阻材料（21a）对纳米压印模板（3）进行填充，获得纳米压印组件；S2、将纳米压印组件与导电衬底对组，使光阻材料（21a）固化于导电衬底的表面上，去除纳米压印模板（3），在导电衬底的表面上形成纳米光阻阵列（21）；其中，纳米光阻阵列（21）之间具有第一空隙阵列；S3、采用电沉积法在第一空隙阵列中沉积金属（13a），并去除纳米光阻阵列（21），在导电衬底的表面形成纳米线栅（13），得到纳米线栅偏光片。这种偏光片的制作方法避免了刻蚀过程，可根据需求沉积不同材料、不同尺寸的金属，并且可通过调整电沉积参数来控制金属的生长速度，易于获得短周期、高深宽比的纳米线栅，应用时可获得更好的偏光效果。

Description

纳米线栅偏光片的制作方法 技术领域
本发明属于LCD制作技术领域，具体地讲，涉及一种纳米线栅偏光片的制作方法。
背景技术
LCD(Liquid Crystal Display)液晶显示器作为信息交流的平台和载体，承载着大量信息的传递，在科技发展和进步的社会背景下起着越来越重要的作用，并且逐渐成为人们关注的重点，人们对新的显示模式和显示效果也有了越来越多的期望。偏光板作为LCD液晶显示器的重要组成部分，会吸收与偏光轴垂直方向的光，只让偏光轴方向的光通过，从而将自然光转变成直线偏振光，但这样会损失50％以上的光，这极大地降低了LCD液晶显示器的整体透过率。
纳米线栅能够透过电场方向垂直于线栅方向的入射光，而将电场方向平行于线栅方向的光反射，基于这样的工作原理，可以通过增加防反射膜等方式将反射光重新利用，所以纳米线栅偏光片透过入射光的能力远远大于传统偏光片，其透过率可达90％以上，且对比度也有10000:1之高，可以大幅度提高LCD液晶显示器的透过率和对比度，满足市场上高穿透、高对比的需求。
纳米线栅的偏光特性由线栅材料及其结构决定的，线栅的结构参数主要包括线栅宽度(linewidth)、线栅深度(depth)及线栅周期(aspect ratio)等。当线栅周期足够小、且达到远小于入射光波长范围时，线栅能反射几乎全部与线栅平行振动的电场矢量分量的光，使垂直于线栅的电场矢量分量的光几乎全部透过，且线栅周期越小，偏振效果越好。因此，如何获取足够小的线栅周期以及合适的深宽比成为制备纳米线栅的关键。目前主流的制备方法是利用干刻蚀，其原理是使用高能等离子体轰击线栅材料，使无PR保护的材料分子逸出，达到刻蚀 的效果，此方法刻蚀精确，可获得较大深宽比的纳米线栅，但能耗过大且设备昂贵。
发明内容
为解决上述现有技术存在的问题，本发明采用了如下的技术方案：
一种纳米线栅偏光片的制作方法，包括步骤：
S1、提供一纳米压印模板，并采用光阻材料对所述纳米压印模板进行填充，获得纳米压印组件；
S2、将所述纳米压印组件与导电衬底对组，使所述光阻材料固化于所述导电衬底的表面上，去除所述纳米压印模板，在所述导电衬底的表面上形成纳米光阻阵列；其中，所述纳米光阻阵列之间具有第一空隙阵列；
S3、采用电沉积法在所述第一空隙阵列中沉积金属，并去除所述纳米光阻阵列，在所述导电衬底的表面上形成纳米线栅，得到纳米线栅偏光片。
进一步地，所述步骤S2的具体方法包括：
将所述纳米压印组件与所述导电衬底对组，并在高于所述光阻材料的熔点的温度下对所述纳米压印组件施压，使所述光阻材料与所述导电衬底接触；
调整温度至低于所述光阻材料的熔点，使所述光阻材料固化于所述导电衬底的表面上；
去除所述纳米压印模板，在所述导电衬底的表面上形成所述纳米光阻阵列。
进一步地，所述导电衬底包括基板以及设置于所述基板上的导电层。
进一步地，所述基板选自玻璃基板、PI膜或PET膜中的任意一种；所述导电层的材料选自ITO、石墨烯、透明导电材料中的任意一种。
进一步地，所述步骤S3的具体方法包括：
以所述金属的块体材料为阳极、以所述导电层为阴极，将所述阳极和所述阴极浸于电解液中；
在所述阳极和所述阴极之间施加直流电，在所述第一空隙阵列中沉积所述金属；
待所述金属沉积完毕后，去除所述纳米光阻阵列，在所述导电衬底的表面上形成所述纳米线栅，得到所述纳米线栅偏光片；其中，所述纳米线栅的材料的还原电位高于所述导电层的材料的还原电位。
进一步地，所述电解液中包含有所述金属的无机盐、表面活性剂和整平剂。
进一步地，所述导电层的材料为ITO，所述阳极的材料为Au，所述金属的无机盐为AuCl3；或所述导电层的材料为ITO，所述阳极的材料为Ag，所述金属的无机盐为AgCl。
进一步地，所述纳米压印模板的表面具有第二空隙阵列，所述光阻材料填充在所述第二空隙阵列中，以形成所述纳米压印组件。
本发明采用纳米压印技术在导电衬底上制作纳米光阻阵列，再通过电沉积法在由纳米光阻阵列形成的第一间隙阵列内沉积金属以形成纳米线栅，去除纳米光阻阵列后即获得纳米线栅偏光片；该制作方法工艺简单、能耗较低。根据本发明的制作方法，避免了传统纳米压印中的刻蚀过程，且能够根据需求沉积不同材料、不同尺寸的金属，并且可以通过调整电沉积来参数控制金属的生长速度，易于获得短周期、高深宽比的纳米线栅，从而当该纳米线栅偏光片应用于LCD中时，能够获得更好的偏振效果。
附图说明
通过结合附图进行的以下描述，本发明的实施例的上述和其它方面、特点和优点将变得更加清楚，附图中：
图1是根据本发明的实施例的纳米线栅偏光片的制备方法的步骤流程图；
图2-图9是根据本发明的实施例的纳米线栅偏光片的制备方法的工艺流程图。
具体实施方式
以下，将参照附图来详细描述本发明的实施例。然而，可以以许多不同的形式来实施本发明，并且本发明不应该被解释为限制于这里阐述的具体实施例。相反，提供这些实施例是为了解释本发明的原理及其实际应用，从而使本领域的其他技术人员能够理解本发明的各种实施例和适合于特定预期应用的各种修改。在附图中，为了清楚起见，可以夸大元件的形状和尺寸，并且相同的标号将始终被用于表示相同或相似的元件。
将理解的是，尽管在这里可使用术语“第一”、“第二”等来描述各种结构，但是这些结构不应受这些术语的限制。这些术语仅用于将一个结构与另一个结构区分开来。
本发明提供了一种纳米线栅偏光片的制作方法，具体参照图1，其包括下述步骤：
步骤S1、提供一纳米压印模板3，并采用光阻材料21a对纳米压印模板3进行填充，获得纳米压印组件。
具体来讲，该纳米压印模板3的表面具有由若干第二空隙31形成的第二空隙阵列，光阻材料21a填充在第二空隙阵列中，形成了纳米压印组件；如图2和图3所示。
步骤S2、将纳米压印组件与导电衬底对组，使光阻材料21a固化于导电衬底的表面上，去除纳米压印模板3，在导电衬底的表面上形成纳米光阻阵列21。
一般地，导电衬底包括基板11以及形成于基板11上的导电层12；基板11可选自玻璃基板、PI膜或PET膜中的任意一种，导电层12的材料可选自ITO、石墨烯、透明导电材料中的任意一种；基板11与导电层12的选择此处不再赘述，本领域技术人员参照现有技术即可。
具体来讲，纳米光阻阵列21由若干纳米光阻排布形成，在纳米光阻之间形成了由若干第一空隙22组成的第一空隙阵列。
更为具体地，优选采用下述方法来形成纳米光阻阵列：(1)将纳米压印组件与导电衬底对组，并在高于光阻材料21a的熔点的温度下对纳米压印组件施压，使光阻材料21a与导电衬底中的导电层12相接触；(2)调整温度至低于光阻材料21a的熔点，使光阻材料21a固化于导电层12的表面上；(3)去除纳米压印模板3，在导电衬底的表面上形成纳米光阻阵列21；具体参见图4-图6，在图5中，箭头表示施压时压力F的施加方向，在图6中，箭头表示纳米压印模板3的去除方向。
步骤S3、采用电沉积法在第一空隙阵列中沉积金属13a，并去除纳米光阻阵列21，在导电衬底的表面形成纳米线栅13，得到纳米线栅偏光片。
具体来讲，参照下述方法：(1)以预沉积的金属的块体材料为阳极41、以导电层12为阴极，将阳极41和阴极浸于电解液42中；(2)在阳极41和阴极之间施加直流电，在第一空隙阵列中沉积金属13a；(3)待金属13a沉积完毕后，将导电衬底由电解液42中取出并去除纳米光阻阵列21，在导电衬底的表面上形成纳米线栅13，得到纳米线栅偏光片；如图7-图9所示。
一般地，电解液中包含有所述金属的无机盐、表面活性剂和整平剂。
以导电层12的材料为ITO、阳极41的材料为Au、金属的无机盐为AuCl3为例来说明上述电沉积的过程；其中，ITO中的In的还原电位为-0.3382V，Sn的还原电位为-0.1364V，而Au的还原电位为1.42V；当在Au阳极和ITO阴极之间施加直流电后，Au阳极发生氧化反应，Au原子失去电子成为Au3+进入电解液42中，与此同时，电解液42中的Au3+则在ITO阴极表面获得电子发生还原反应而形成金属Au晶核并生长填充在第一空隙22内，待金属Au沉积完毕后，将导电衬底由电解液42中取出并去除其表面的纳米光阻阵列21，即可获得纳米线栅13，基板11及其表面的导电层12和纳米线栅13组成 了纳米线栅偏光片。当然，当导电层12的材料为ITO时，阳极41的材料还可以是Ag(还原电位为0.7996V)，对应的金属的无机盐则为AgCl。因此，在电沉积的过程中，需要控制纳米线栅13的材料的还原电位高于导电层12的材料的还原电位。
通过上述制作过程，可以看出，根据本发明的实施例的纳米线栅偏光片的制作方法工艺简单、能耗较低。同时，该制作方法避免了传统纳米压印中的刻蚀过程，且能够根据需求沉积不同材料、不同尺寸的金属13a，并且通过调整电沉积参数来控制金属13a的生长速度，通过制备具有不同周期及不同深度的第二空隙阵列的纳米压印模板3，即可获得短周期、高深宽比的纳米线栅13，从而当该纳米线栅偏光片应用于LCD中时，能够获得更好的偏振效果。
虽然已经参照特定实施例示出并描述了本发明，但是本领域的技术人员将理解：在不脱离由权利要求及其等同物限定的本发明的精神和范围的情况下，可在此进行形式和细节上的各种变化。

Claims (13)

  1. 一种纳米线栅偏光片的制作方法，其中，包括步骤：
    S1、提供一纳米压印模板，并采用光阻材料对所述纳米压印模板进行填充，获得纳米压印组件；
    S2、将所述纳米压印组件与导电衬底对组，使所述光阻材料固化于所述导电衬底的表面上，去除所述纳米压印模板，在所述导电衬底的表面上形成纳米光阻阵列；其中，所述纳米光阻阵列之间具有第一空隙阵列；
    S3、采用电沉积法在所述第一空隙阵列中沉积金属，并去除所述纳米光阻阵列，在所述导电衬底的表面上形成纳米线栅，得到纳米线栅偏光片。
  2. 根据权利要求1所述的制作方法，其中，所述步骤S2的具体方法包括：
    将所述纳米压印组件与所述导电衬底对组，并在高于所述光阻材料的熔点的温度下对所述纳米压印组件施压，使所述光阻材料与所述导电衬底接触；
    调整温度至低于所述光阻材料的熔点，使所述光阻材料固化于所述导电衬底的表面上；
    去除所述纳米压印模板，在所述导电衬底的表面上形成所述纳米光阻阵列。
  3. 根据权利要求1所述的制作方法，其中，所述导电衬底包括基板以及设置于所述基板上的导电层。
  4. 根据权利要求3所述的制作方法，其中，所述基板选自玻璃基板、PI膜或PET膜中的任意一种；所述导电层的材料选自ITO、石墨烯、透明导电材料中的任意一种。
  5. 根据权利要求3所述的制作方法，其中，所述步骤S3的具体方法包括：
    以所述金属的块体材料为阳极、以所述导电层为阴极，将所述阳极和所述阴极浸于电解液中；
    在所述阳极和所述阴极之间施加直流电，在所述第一空隙阵列中沉积所述金属；
    待所述金属沉积完毕后，去除所述纳米光阻阵列，在所述导电衬底的表面上形成所述纳米线栅，得到所述纳米线栅偏光片；其中，所述纳米线栅的材料的还原电位高于所述导电层的材料的还原电位。
  6. 根据权利要求5所述的制作方法，其中，所述电解液中包含有所述金属的无机盐、表面活性剂和整平剂。
  7. 根据权利要求6所述的制作方法，其中，所述导电层的材料为ITO，所述阳极的材料为Au，所述金属的无机盐为AuCl3；
    或所述导电层的材料为ITO，所述阳极的材料为Ag，所述金属的无机盐为AgCl。
  8. 根据权利要求2所述的制作方法，其中，所述导电衬底包括基板以及设置于所述基板上的导电层。
  9. 根据权利要求8所述的制作方法，其中，所述基板选自玻璃基板、PI膜或PET膜中的任意一种；所述导电层的材料选自ITO、石墨烯、透明导电材料中的任意一种。
  10. 根据权利要求8所述的制作方法，其中，所述步骤S3的具体方法包括：
    以所述金属的块体材料为阳极、以所述导电层为阴极，将所述阳极和所述阴极浸于电解液中；
    在所述阳极和所述阴极之间施加直流电，在所述第一空隙阵列中沉积所述金属；
    待所述金属沉积完毕后，去除所述纳米光阻阵列，在所述导电衬底的表面上形成所述纳米线栅，得到所述纳米线栅偏光片；其中，所述纳米线栅的材料的还原电位高于所述导电层的材料的还原电位。
  11. 根据权利要求10所述的制作方法，其中，所述电解液中包含有所述金属的无机盐、表面活性剂和整平剂。
  12. 根据权利要求11所述的制作方法，其中，所述导电层的材料为ITO，所述阳极的材料为Au，所述金属的无机盐为AuCl3；
    或所述导电层的材料为ITO，所述阳极的材料为Ag，所述金属的无机盐为AgCl。
  13. 根据权利要求1所述的制作方法，其中，所述纳米压印模板的表面具有第二空隙阵列，所述光阻材料填充在所述第二空隙阵列中，以形成所述纳米压印组件。
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