CN113838927A - 一种电荷等离子体SiGe异质结双极晶体管 - Google Patents
一种电荷等离子体SiGe异质结双极晶体管 Download PDFInfo
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Abstract
本发明公开了一种电荷等离子体SiGe异质结双极晶体管,为npn型晶体管。采用SiGe材料制备基区,与未掺杂的Si发射区和Si集电区形成异质结,通过有效改变发射结处能带结构来提高器件的电流增益。同时考虑到金属镉的功函数为4.07eV,易于与未掺杂的Si形成良好的金‑半接触,有效诱导产生n型电荷等离子体,且具有优良的导电性,较好的抗熔焊性,以及优异的抗拉强度和高耐磨性等优点,因此本发明采用金属镉作为发射极和集电极的电极材料,用于调节发射极和集电极下方对应发射区和集电区内n型载流子浓度。通过上述结构的有效配合,实现了晶体管电流增益、击穿电压和特征频率的同步提高。
Description
技术领域
本发明涉及电荷等离子体SiGe异质结双极晶体管,特别是适用于显示器驱动电路、高速混合信号、以及低功耗无线集成电路等领域的电荷等离子体SiGe异质结双极晶体管。
背景技术
与传统的绝缘体上硅(SOI)基双极晶体管相比,电荷等离子体双极晶体管无需掺杂工艺,仅通过采用具有不同功函数的金属材料作为电极与未掺杂的Si形成良好的金-半接触,有效诱导产生电荷等离子体,即可形成双极型晶体管,因此具有制备工艺简单、无需掺杂和热退火,且与成熟的CMOS工艺相兼容等优点,将在高速混合模拟集成电路领域扮演越来越重要的角色。
图1示出了常规电荷等离子体双极晶体管纵向剖面示意图,其中发射区、基区和集电区均为未掺杂的本征Si材料,采用金属Zr作为发射极电极和集电极电极,采用金属Pt作为基极电极,通过金-半接触在Si材料一侧分别诱导产生n型和p型电荷等离子体,从而形成了同质结双极晶体管,且发射区和集电区保持相同的电子浓度。为了有效提高器件的电流处理能力,常规电荷等离子体双极晶体管的发射极和集电极电极选用了与Si功函数差较大(0.68V)的Zr作为电极金属,来有效提高发射区一侧电子浓度,进而提高器件的电流增益。但是集电区一侧电子浓度也会相应增大,此时击穿电压将大幅减小,不利于电荷等离子体双极晶体管在高速混合模拟集成电路中的应用。可见如何设计出一种兼具高电流增益和高击穿电压的电荷等离子体双极晶体管,具有重要的理论和实际意义。
发明内容
本发明公开了一种电荷等离子体SiGe异质结双极晶体管,为npn型晶体管。
本发明的一种电荷等离子体SiGe异质结双极晶体管,其特征在于:所述晶体管包括Si衬底(20),SiO2埋氧层(21),以及位于所述SiO2埋氧层(21)上方的未掺杂的Si发射区(22),未掺杂的SiGe基区(23)和未掺杂的Si集电区(24);SiO2隔离层(28)分别位于所述未掺杂的Si发射区(22)和未掺杂的Si集电区(24)的正上方,基极Pt电极(26)位于所述未掺杂的SiGe基区(23)的正上方且与其相接触,发射极Cd电极(25)位于SiO2埋氧层(21)的上方且分别与未掺杂的Si发射区(22)及其上方的SiO2隔离层(28)相接触,集电极Cd电极(27)位于SiO2埋氧层(21)的上方且分别与未掺杂的Si集电区(24)及其上方的SiO2隔离层(28)相接触。
所述晶体管发射极Cd电极(25)在未掺杂的Si发射区(22)中形成n型电荷等离子体;基极Pt电极(26)在未掺杂的SiGe基区(23)中形成p型电荷等离子体;集电极Cd电极(27)在未掺杂的Si集电区(24)中形成n型电荷等离子体,最终形成npn型晶体管。
所述Si衬底(20)厚度介于20nm到40nm之间;所述SiO2埋氧层(21)厚度介于20nm到40nm之间;所述未掺杂的Si发射区(22)、未掺杂的SiGe基区(23)以及未掺杂的Si集电区(24)的厚度相等且均介于10nm到20nm之间;所述未掺杂的Si发射区(22)和未掺杂的Si集电区(24)宽度相等,均介于60nm到80nm之间;所述未掺杂的SiGe基区(23)宽度介于50nm到70nm之间,其中Ge组分的含量介于0.05-0.2之间;所述SiO2隔离层(28)厚度介于1nm到5nm之间,宽度介于60nm到80nm之间;发射极(25)和集电极(27)电极的厚度相等,均介于12nm到30nm之间,长度相等,均介于65nm到75nm之间;基极(26)电极的厚度介于2nm到10nm之间,长度介于55nm到65nm之间。
与常规电荷等离子体双极晶体管相比,所述晶体管通过采用未掺杂的SiGe基区(23)来改变发射结处的能带结构,可有效提高电流增益,此时发射极和集电极电极可以选取与Si功函数差较小(0.66V)的Cd作为电极金属,来有效降低集电区一侧的电子浓度,从而提高了器件的击穿电压。本发明所述的一种电荷等离子体SiGe异质结双极晶体管实现了电流增益和击穿电压的同步提高,有效拓展了器件在高速混合模拟集成电路领域的应用范围。
附图说明
结合附图所进行的下列描述,可进一步理解本发明的目的和优点。在这些附图中:
图1示例了常规电荷等离子体双极晶体管纵向剖面示意图;
图2示例了本发明实施例的纵向剖面示意图;
图3示例了本发明实施例对发射结处能带结构的改善;
图4示例了本发明实施例对器件电流增益的改善;
图5示例了本发明实施例对器件击穿电压BVCEO的改善;
图6示例了本发明实施例对器件击穿电压BVCBO的改善;
图7示例了本发明实施例对器件特征频率的改善。
具体实施方式
本发明实施例以Ge组分含量为0.1的电荷等离子体SiGe异质结双极晶体管为例,对本发明内容进行具体表述。本发明涉及领域并不限制于此。
实施示例:
本发明实施例公开的电荷等离子体SiGe异质结双极晶体管,图2示例了其纵向剖面示意图,其中包括Si衬底(20),厚度为25nm;SiO2埋氧层(21),厚度为25nm;未掺杂的SiGe基区(23),Ge组分为0.1,厚度为15nm,宽度为60nm;未掺杂的Si发射区(22)和未掺杂的Si集电区(24),厚度均为15nm,宽度均为70nm;其中所述未掺杂的SiGe基区(23)、Si发射区(22)以及Si集电区(24)位于SiO2埋氧层(21)的上方;SiO2隔离层(28)分别位于所述未掺杂的Si发射区(22)和未掺杂的Si集电区(24)的正上方,厚度均为2.5nm,宽度均为70nm;基极Pt电极(26)位于所述未掺杂的SiGe基区(23)的正上方并相接触,厚度为5nm,宽度为60nm;发射极Cd电极(25)位于SiO2埋氧层(21)的上方且分别与未掺杂的Si发射区(22)及其上方的SiO2隔离层(28)相接触,总厚度为20nm,总长度为70nm;集电极Cd电极(27)SiO2埋氧层(21)的上方且分别与未掺杂的Si集电区(24)及其上方的SiO2隔离层(28)相接触,总厚度为20nm,总长度为70nm。
为了更好地体现电荷等离子体SiGe异质结双极晶体管的性能,对本发明实施例和常规器件的电流增益,击穿电压BVCEO、BVCBO,以及特征频率进行了对比。
图3示例了本发明实施例对发射结处能带结构的改善。可以看出,与常规电荷等离子体双极晶体管相比,本发明实施例中SiGe基区的引入会有效降低电子在发射结处的势垒高度,从而增大了发射结的注入效率,提高了电流增益。
图4示例了在VCE=1.5V,VBE=1V的条件下,本发明实施例对器件电流增益的改善。可以看出,与常规电荷等离子体双极晶体管相比,本发明实施例的峰值电流增益(β)为3987.25,与常规电荷等离子体双极晶体管相比,改善了193.61%。
图5示例了本发明实施例对器件击穿电压BVCEO的改善。可以看到,本发明实施例的击穿电压BVCEO为0.6V,与常规电荷等离子体双极晶体管相比,改善了71.43%。
图6示例了本发明实施例对器件击穿电压BVCBO的改善。可以看到,本发明实施例的击穿电压BVCBO为6.13V,与常规电荷等离子体双极晶体管相比,改善了33.26%。
图7示例了在VCE=1.5V,VBE=1V的条件下,本发明实施例对器件特征频率的改善。可以看出,本发明实施例的峰值特征频率fT为89.09GHz,与常规电荷等离子体双极晶体管相比,本发明实施例的峰值特征频率fT提高了31.96GHz,并且集电极电流IC在10-4~0.1mA范围内变化时,本发明实施例的特征频率fT均高于常规器件的特征频率。
上述结果均显示了本发明实施例的优越性,本发明对设计和制造电荷等离子体SiGe异质结双极晶体管具有重要的理论和实际意义。
Claims (3)
1.一种电荷等离子体SiGe异质结双极晶体管,其特征在于:
包括Si衬底(20),SiO2埋氧层(21),以及位于所述SiO2埋氧层(21)上方的未掺杂的Si发射区(22),未掺杂的SiGe基区(23)和未掺杂的Si集电区(24);SiO2隔离层(28)分别位于所述未掺杂的Si发射区(22)和未掺杂的Si集电区(24)的正上方,基极Pt电极(26)位于所述未掺杂的SiGe基区(23)的正上方且与其相接触,发射极Cd电极(25)位于SiO2埋氧层(21)的上方且分别与未掺杂的Si发射区(22)及其上方的SiO2隔离层(28)相接触,集电极Cd电极(27)位于SiO2埋氧层(21)的上方且分别与未掺杂的Si集电区(24)及其上方的SiO2隔离层(28)相接触。
2.根据权利要求1所述的一种电荷等离子体SiGe异质结双极晶体管,其特征在于:
发射极Cd电极(25)在未掺杂的Si发射区(22)中形成n型电荷等离子体;基极Pt电极(26)在未掺杂的SiGe基区(23)中形成p型电荷等离子体;集电极Cd电极(27)在未掺杂的Si集电区(24)中形成n型电荷等离子体,最终形成npn型晶体管。
3.根据权利要求1所述的一种电荷等离子体SiGe异质结双极晶体管,其特征在于:
所述Si衬底(20)厚度介于20nm到40nm之间;所述SiO2埋氧层(21)厚度介于20nm到40nm之间;所述未掺杂的Si发射区(22)、未掺杂的SiGe基区(23)以及未掺杂的Si集电区(24)的厚度相等且均介于10nm到20nm之间;所述未掺杂的Si发射区(22)和未掺杂的Si集电区(24)宽度相等,均介于60nm到80nm之间;所述未掺杂的SiGe基区(23)宽度介于50nm到70nm之间,其中Ge组分的含量介于0.05-0.2之间;所述SiO2隔离层(28)的厚度介于1nm到5nm之间,宽度介于60nm到80nm之间;发射极(25)和集电极(27)电极的厚度相等,均介于12nm到30nm之间,长度相等,均介于65nm到75nm之间;基极(26)电极的厚度介于2nm到10nm之间,长度介于55nm到65nm之间。
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