CN113823698A - SiC Schottky power diode and preparation method thereof - Google Patents
SiC Schottky power diode and preparation method thereof Download PDFInfo
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- CN113823698A CN113823698A CN202111005103.3A CN202111005103A CN113823698A CN 113823698 A CN113823698 A CN 113823698A CN 202111005103 A CN202111005103 A CN 202111005103A CN 113823698 A CN113823698 A CN 113823698A
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- 238000002360 preparation method Methods 0.000 title claims description 13
- 238000002161 passivation Methods 0.000 claims abstract description 105
- 238000002955 isolation Methods 0.000 claims abstract description 78
- 229910052751 metal Inorganic materials 0.000 claims abstract description 52
- 239000002184 metal Substances 0.000 claims abstract description 52
- 238000002347 injection Methods 0.000 claims abstract description 33
- 239000007924 injection Substances 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 238000004519 manufacturing process Methods 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 11
- 239000004642 Polyimide Substances 0.000 claims description 8
- 229920001721 polyimide Polymers 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 6
- 229910052681 coesite Inorganic materials 0.000 claims description 6
- 229910052906 cristobalite Inorganic materials 0.000 claims description 6
- 238000002513 implantation Methods 0.000 claims description 6
- 229910052682 stishovite Inorganic materials 0.000 claims description 6
- 229910052905 tridymite Inorganic materials 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 229910005883 NiSi Inorganic materials 0.000 claims description 3
- 229910008484 TiSi Inorganic materials 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000007943 implant Substances 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 95
- 238000000034 method Methods 0.000 description 25
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 24
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 239000010931 gold Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- 229910000505 Al2TiO5 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- UGACIEPFGXRWCH-UHFFFAOYSA-N [Si].[Ti] Chemical compound [Si].[Ti] UGACIEPFGXRWCH-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- PEUPIGGLJVUNEU-UHFFFAOYSA-N nickel silicon Chemical compound [Si].[Ni] PEUPIGGLJVUNEU-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- AABBHSMFGKYLKE-SNAWJCMRSA-N propan-2-yl (e)-but-2-enoate Chemical compound C\C=C\C(=O)OC(C)C AABBHSMFGKYLKE-SNAWJCMRSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
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- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/048—Making electrodes
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- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
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Abstract
The invention discloses a SiC Schottky power diode which comprises an N-type 4H-SiC substrate, a P-type 4H-SiC isolating layer and an N-type 4H-SiC epitaxial layer with the thickness of 4-6 mu m; an inverted trapezoidal anode groove and an isolation groove are formed in the middle of the epitaxial layer, and the tops of two ends of the epitaxial layer are inwards avoided to form an isolation region; the isolation region and the isolation groove are filled with insulating media to form a current dredging structure; the epitaxial layer is provided with an N + injection region and a P + injection protection region; further comprising: the cathode ohmic contact metal layer covers the N + injection region; the first passivation layer is arranged on the P + injection protection area; the second passivation layer is arranged at the bottom of the anode groove; the anode Schottky contact metal layer covers the surface of the first passivation layer part, the surface of the anode groove and the surface of the second passivation layer; the third passivation layer covers the remaining surface of the first passivation layer and extends toward the two side metal layers. The invention improves the performance and yield of the Schottky power diode under high working voltage.
Description
Technical Field
The invention belongs to the technical field of semiconductors, and particularly relates to a SiC Schottky power diode and a preparation method thereof.
Background
Common crystal types of SiC (silicon carbide) are 3C, 4H, and 6H, among others. Among them, 4H-SiC is not the second choice for manufacturing power electronic power devices due to its characteristics of good quality and low price.
The 4H-SiC Schottky power diode is suitable for power systems such as rectification and inversion, and is one of indispensable novel power components in novel industrial energy conversion systems such as electric vehicles, industrial control and high-speed rails. With the continuous improvement of power capacity, the working voltage and the working current of the 4H-SiC Schottky power diode are further improved.
In the conventional 4H-SiC power schottky power diode, in order to realize a high operating voltage (more than 3000V), the epitaxial layer is often thickened, and an operating voltage of 3000V or more requires that the thickness of the epitaxial layer be 30 μm or more. However, when the thickness of the epitaxial layer is greater than 20 μm, the SiC epitaxial process greatly reduces the performance and yield of the 4H-SiC schottky power diode, which causes inconvenience to the commercialization of the high voltage schottky power diode. Therefore, how to improve the performance and yield of the 4H-SiC schottky power diode under the high operating voltage is a technical problem to be solved urgently.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a SiC Schottky power diode and a preparation method thereof.
The technical problem to be solved by the invention is realized by the following technical scheme:
a SiC schottky power diode comprising:
an N-type 4H-SiC substrate;
a P-type 4H-SiC isolation layer stacked above the N-type 4H-SiC substrate;
the N-type 4H-SiC epitaxial layer is stacked above the P-type 4H-SiC isolating layer; the thickness of the N-type 4H-SiC epitaxial layer is 4-6 mu m;
the middle part of the N-type 4H-SiC epitaxial layer along the horizontal direction is carved with an inverted trapezoidal anode groove and two isolation grooves positioned below the inner angle of the inverted trapezoidal anode groove; the tops of two ends of the N-type 4H-SiC epitaxial layer are inwards avoided to form two isolation regions; insulating media are filled in the isolation region and the isolation groove to form a current dredging structure; n elements are injected into the part, close to the isolation region, of the N-type 4H-SiC epitaxial layer between each isolation region and the inverted trapezoidal anode groove to form an N + injection region, and Al elements are injected into the part, close to the inverted trapezoidal anode groove, to form a P + injection protection region;
the SiC schottky power diode further includes:
a cathode ohmic contact metal layer covering the N + injection region;
the first passivation layer covers the P + injection protection region;
the second passivation layer covers the bottom of the inverted trapezoidal anode groove;
the anode Schottky contact metal layer covers the partial surface, the surface and the surface of the second passivation layer of the first passivation layer, which is close to the inverted trapezoidal anode groove;
and the third passivation layer covers the residual surface of the first passivation layer and extends to the anode Schottky contact metal layer and the cathode ohmic contact metal layer which are adjacent to both sides.
Preferably, the SiC schottky power diode provided by the present invention further includes: and the fourth passivation layer covers the upper part of the insulating medium filled in the isolation region.
Preferably, the depth of the inverted trapezoidal anode groove is 1.5-2 μm, the width of the bottom is 5-10 μm, and the angle of the inner angle of the bottom is 45 ° ± 10 °.
Preferably, the height of the isolation region and the depth of the isolation groove are both 2 μm to 3 μm, and the width is both 1 μm to 2 μm.
Preferably, the N + implantation region has a height of 0.3 to 0.5 μm and a width of 5 to 10 μm.
Preferably, the first passivation layer and the second passivation layer are both SiO2And a passivation layer.
Preferably, the third passivation layer and the fourth passivation layer are both polyimide passivation layers.
Preferably, the cathode ohmic contact metal layer is made of a material including: ni, Ti, NiSi alloy or TiSi alloy.
Preferably, the anode schottky contact metal layer is made of a material including: ti, Ni, W, Au, Pt or Pd.
The invention also provides a preparation method of the SiC Schottky power diode, which comprises the following steps:
obtaining an N-type 4H-SiC substrate, and depositing P-type 4H-SiC on the upper surface of the N-type 4H-SiC substrate to form a P-type 4H-SiC isolation layer;
depositing N-type 4H-SiC with the thickness of 4-6 mu m above the P-type 4H-SiC isolating layer to form an N-type 4H-SiC epitaxial layer;
etching the middle part of the N-type 4H-SiC epitaxial layer in the horizontal direction to form an inverted trapezoidal anode groove;
etching the N-type 4H-SiC epitaxial layer below the inner angle of the inverted trapezoidal anode groove to form two isolation grooves, and etching the tops of two ends of the N-type 4H-SiC epitaxial layer to form two isolation regions;
filling insulating media in the isolation region and the isolation groove to form a current dredging structure;
for the N-type 4H-SiC epitaxial layer between each isolation region and the inverted trapezoidal anode groove, injecting N elements into the part close to the isolation region to form an N + injection region, and injecting Al elements into the part close to the inverted trapezoidal anode groove to form a P + injection protection region;
growing a first passivation layer on the upper surface of the P + injection protection region, and growing a second passivation layer at the bottom of the inverted trapezoidal anode groove;
manufacturing a cathode ohmic contact metal layer on the upper surface of the N + injection region, and then carrying out thermal annealing treatment;
manufacturing an anode Schottky contact metal layer on the partial surface of the first passivation layer close to the inverted trapezoidal anode groove, the surface of the inverted trapezoidal anode groove and the surface of the second passivation layer;
and manufacturing a third passivation layer on the residual surface of the first passivation layer, and extending the third passivation layer to the anode Schottky contact metal layer and the cathode ohmic contact metal layer which are adjacent to both sides of the first passivation layer.
According to the SiC Schottky power diode provided by the invention, the cathode and the anode are arranged on the same side, so that a conduction path between the two electrodes advances in the horizontal direction of the epitaxial layer and does not depend on the thickness of the epitaxial layer in the vertical direction; therefore, the invention has low requirement on the thickness of the epitaxial layer, and can realize higher working voltage (more than 3000V) under the condition that the thickness is 4-6 mu m; compared with the prior Schottky power diode which needs the thickness of the epitaxial layer of more than 30 μm when the working voltage of more than 3000V is reached, the invention has low requirement on the epitaxial process, the prior epitaxial process can be completely satisfied, and the performance and yield of the device can not be reduced due to the shortage of the process. In order to ensure the performance of a Schottky power diode with a horizontal conduction path under high working voltage, the reverse trapezoidal anode groove is etched in the Schottky power diode, and cathode ohmic contact metal is manufactured on the surface of the reverse trapezoidal anode groove and around the reverse trapezoidal anode groove, so that the area of the cathode ohmic contact metal is increased, the current conduction area of the diode is increased, the current path from the anode to the cathode can be shortened, and the forward conduction capability of the Schottky power diode is effectively improved. In addition, the inner angle of the bottom of the inverted trapezoidal anode groove is an obtuse angle, and the electric field concentration phenomenon at the bottom of the groove can be relieved. In addition, the two isolation grooves and the two isolation regions are etched in the epitaxial layer, so that a current dredging structure is formed, the current trend in the epitaxial layer can be dredged when the Schottky power diode works in the forward direction, the current flowing directivity is stronger, and the resistance and the power consumption of the Schottky power diode in the forward direction can be reduced. In addition, Al element is injected into the epitaxial layer between the anode and the cathode to form a P + injection protection region with the polarity opposite to that of the N-type 4H-SiC epitaxial layer, so that the surface leakage current of the Schottky power diode is reduced, and the reverse characteristic of the Schottky power diode is improved.
The SiC Schottky power diode provided by the invention has the advantages of low material requirement difficulty, simple required preparation process and low preparation cost.
The present invention will be described in further detail with reference to the accompanying drawings.
Drawings
Fig. 1 is a schematic structural diagram of an SiC schottky power diode according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of another SiC schottky power diode provided in the embodiment of the present invention;
FIG. 3 is a flow chart of a method of fabricating a SiC Schottky power diode in an embodiment of the present invention;
fig. 4(a) to 4(j) graphically illustrate a process for manufacturing a SiC schottky power diode according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to specific examples, but the embodiments of the present invention are not limited thereto.
In order to improve the performance and yield of the 4H-SiC Schottky power diode under high operating voltage, the embodiment of the invention provides the SiC Schottky power diode. Referring to fig. 1, the SiC schottky power diode includes: the device comprises an N-type 4H-SiC substrate 1, a P-type 4H-SiC isolating layer 2, an N-type 4H-SiC epitaxial layer 3, a cathode ohmic contact metal layer 9, a first passivation layer 7, a second passivation layer 8, a third passivation layer 11 and an anode Schottky contact metal layer 10. Wherein,
the P-type 4H-SiC isolating layer 2 is stacked above the N-type 4H-SiC substrate 1; an N type 4H-SiC epitaxial layer 3 is stacked above the P type 4H-SiC isolating layer 2, and the thickness of the N type 4H-SiC epitaxial layer 3 is 4-6 μm.
An inverted trapezoidal anode groove and two isolation grooves positioned below the inner corners of the inverted trapezoidal anode groove are engraved in the middle of the N-type 4H-SiC epitaxial layer 3 in the horizontal direction, and the depth of the inverted trapezoidal anode groove and the depth of the isolation grooves are smaller than the thickness of the N-type 4H-SiC epitaxial layer 3, namely the isolation grooves do not penetrate through the N-type 4H-SiC epitaxial layer 3; the tops of two ends of the N-type 4H-SiC epitaxial layer 3 are inwards avoided to form two isolation regions, and the two isolation regions are also formed by etching the N-type 4H-SiC epitaxial layer 3; the isolation region and the isolation trench are filled with an insulating medium 4 to form electricityAnd the current dredging structure is used for dredging the current trend in the N type 4H-SiC epitaxial layer 3. N (nitrogen) elements are injected into the part, close to the isolation region, of the N-type 4H-SiC epitaxial layer 3 between each isolation region and the inverted trapezoidal anode groove to form an N + injection region 5, Al (aluminum) elements are injected into the part, close to the inverted trapezoidal anode groove, to form a P + injection protection region 6, and the P + injection protection region 6 is used for improving the breakdown voltage of the Schottky power diode. Wherein N + means that the implantation amount of N-type doping atoms is more than 1018Atomic number/cm-3P + means that the amount of P-type dopant atoms implanted is greater than 1018Atomic number/cm-3。
The cathode ohmic contact metal layer 9 covers the N + injection region 5, the cathode ohmic contact metal layer 9 is a cathode of the schottky power diode, and the cathode manufactured above the N + injection region 5 can reduce the on-resistance of the schottky power diode. The first passivation layer 7 covers the P + injection protection region 6, the second passivation layer 8 covers the bottom of the inverted trapezoidal anode groove, and the two passivation layers are used for reducing the surface leakage current of the Schottky power diode; the anode schottky contact metal layer 10, i.e., the anode of the schottky power diode, covers the surface of the portion of the first passivation layer 7 adjacent to the inverted trapezoidal anode recess, the surface of the inverted trapezoidal anode recess, and the surface of the second passivation layer 8, and the anode schottky contact metal layer covered on the three portions is continuous and non-broken. The third passivation layer 11 covers the remaining surface of the first passivation layer 7 and extends towards the anode schottky contact metal layer 10 and the cathode ohmic contact metal layer 9 adjacent to both sides; that is, the third passivation layer 11 may cover a portion of the anode schottky contact metal layer 10 and the cathode ohmic contact metal layer 9 on both sides of the remaining surface of the first passivation layer 7, in addition to the remaining surface.
In addition, electrode contact metal, such as aluminum or silver, may be further attached to the surfaces of the anode schottky contact metal and the cathode ohmic contact metal.
According to the SiC Schottky power diode provided by the embodiment of the invention, the cathode and the anode are arranged on the same side, so that a conduction path between the two electrodes advances in the horizontal direction of the epitaxial layer and does not depend on the thickness of the epitaxial layer in the vertical direction; therefore, the embodiment of the invention has low requirement on the thickness of the epitaxial layer, can realize higher working voltage (more than 3000V) under the condition that the thickness is 4-6 μm, and has low requirement on the epitaxial process, compared with the prior Schottky power diode which needs the thickness of the epitaxial layer to be more than 30 μm when the working voltage of more than 3000V is reached, the invention has no requirement on the epitaxial process, and the prior epitaxial process can completely meet the requirement, so that the performance and yield of the device can not be reduced due to the shortage of the process. In order to ensure the performance of the Schottky power diode with a horizontal conduction path under high working voltage, the Schottky power diode is provided with the inverted trapezoidal anode groove in an etched mode, and cathode ohmic contact metal is manufactured on the surface of the inverted trapezoidal anode groove and around the surface of the inverted trapezoidal anode groove, so that the area of the cathode ohmic contact metal is increased, the current conduction area of the diode is increased, the current path from the anode to the cathode can be shortened, and the forward conduction capability of the Schottky power diode is effectively improved. In addition, the inner angle of the bottom of the inverted trapezoidal anode groove is an obtuse angle, and the electric field concentration phenomenon at the bottom of the groove can be relieved. In addition, according to the embodiment of the invention, the two isolation grooves and the two isolation regions are etched in the epitaxial layer, so that a current dredging structure is formed, the current trend in the epitaxial layer can be dredged when the Schottky power diode works in the forward direction, the current flowing directivity is stronger, and the resistance and the power consumption of the Schottky power diode in the forward direction can be reduced. In addition, in the embodiment of the invention, Al element is injected into the epitaxial layer between the anode and the cathode to form a P + injection protection region with the polarity opposite to that of the N-type 4H-SiC epitaxial layer, so that the surface leakage current of the Schottky power diode is reduced, and the reverse characteristic of the Schottky power diode is improved.
Optionally, in an embodiment, referring to fig. 2, the SiC schottky power diode provided in the embodiment of the present invention may further include: a fourth passivation layer 12, wherein the fourth passivation layer 12 covers the insulation medium 4 filled in the isolation region; the fourth passivation layer 12 serves to further reduce the surface leakage current of the schottky power diode.
In the following, further examples are given in the embodiments of the present invention, and it should be noted that various materials, dimensional parameters, and the like shown below are only examples of the embodiments of the present invention and do not limit the embodiments of the present invention.
Illustratively, on the premise that the depth of the inverted trapezoidal anode groove and the depth of the isolation groove below the inverted trapezoidal anode groove are smaller than the thickness of the N-type 4H-SiC epitaxial layer 3, the depth of the inverted trapezoidal anode groove can be 1.5-2 μm, the width of the bottom of the inverted trapezoidal anode groove is 5-10 μm, and the angle of the internal angle of the bottom of the inverted trapezoidal anode groove is 45 +/-10 degrees.
Illustratively, the height of the isolation region and the depth of the isolation groove can be 2 μm to 3 μm, and the width can be 1 μm to 2 μm. The insulating medium 4 filled in the isolation region and the isolation trench may include: si3N4(silicon nitride); it will be appreciated that other insulating media 4 suitable for use in semiconductors are also suitable for use in embodiments of the present invention.
Illustratively, the height of the N + implantation region 5 is preferably 0.3 μm to 0.5 μm, and the width is preferably 5 μm to 10 μm.
In one embodiment, the first passivation layer 7 and the second passivation layer 8 may both be SiO2And the (silicon dioxide) passivation layer has the thickness of 500nm +/-100 nm, and the higher the working voltage of the Schottky power diode is, the thicker the required thickness is. In addition, there are many materials that can be used to make passivation layers, such as Al2O3(aluminum oxide), Si3N4(silicon nitride) AlTiO3(aluminum titanate), and the like.
In one embodiment, the third passivation layer 11 and the fourth passivation layer 12 may both be polyimide passivation layers. The thickness of the polyimide passivation layer is preferably 5 μm ± 1 μm.
Alternatively, the material of the cathode ohmic contact metal layer 9 may include: ni (nickel), Ti (titanium), NiSi (nickel silicon) alloy or TiSi (titanium silicon) alloy; the anode schottky contact metal layer 10 may include: ti, Ni, W (tungsten), Au (gold), Pt (platinum) or Pd (palladium).
The thickness of the N-type 4H-SiC substrate 1, the thickness of the P-type 4H-SiC isolating layer 2, the thickness of the cathode ohmic contact metal layer 9 and the thickness of the anode Schottky contact metal layer 10 are not limited, and the thicknesses can be selected according to the actual performance requirements on the Schottky power diode.
In a specific embodiment, the thickness of the N-type 4H-SiC epitaxial layer 3 is 5 μm; the depth of the inverted trapezoidal anode groove is 1.5 mu m, the width of the bottom is 5 mu m, and the angle of the inner angle of the bottom is 45 degrees; the height of the isolation region and the depth of the isolation groove are both 2 μm, the width is both 1 μm, and the insulation medium 4 filled in the isolation region and the isolation groove is both Si3N4(ii) a The height of the N + injection region 5 is 0.4 μm, and the width is 6 μm; the first passivation layer 7 and the second passivation layer 8 are both SiO2A passivation layer with a thickness of 550 nm; the third passivation layer 11 and the fourth passivation layer 12 are both polyimide passivation layers and have a thickness of 5 μm.
The following describes in detail a method for manufacturing a SiC schottky power diode according to an embodiment of the present invention. Referring to fig. 3, the method comprises the steps of:
s1: and obtaining an N-type 4H-SiC substrate, and depositing P-type 4H-SiC on the upper surface of the N-type 4H-SiC substrate to form a P-type 4H-SiC isolation layer.
Specifically, a chemical vapor deposition process is adopted to deposit a P-type 4H-SiC material on the upper surface of the N-type 4H-SiC substrate 1 to form a P-type 4H-SiC isolating layer 2. This step S1 can be visually represented by fig. 4 (a).
S2: and depositing N-type 4H-SiC with the thickness of 4-6 mu m above the P-type 4H-SiC isolating layer to form an N-type 4H-SiC epitaxial layer.
Specifically, a chemical vapor deposition process is adopted to deposit an N-type 4H-SiC material on the upper surface of the P-type 4H-SiC isolation layer 2 to form an N-type 4H-SiC epitaxial layer 3. This step S2 can be visually represented by fig. 4 (b).
S3: and etching the middle part of the N-type 4H-SiC epitaxial layer in the horizontal direction to form an inverted trapezoidal anode groove.
Specifically, a dry etching process is adopted to etch the middle part of the N-type 4H-SiC epitaxial layer 3 in the horizontal direction to form an inverted trapezoidal anode groove. This step S3 can be visually represented by fig. 4 (c).
Preferably, on the premise that the etching depth is smaller than the thickness of the N-type 4H-SiC epitaxial layer, the depth of the inverted trapezoidal anode groove is 1.5-2 μm, the width of the bottom is 5-10 μm, and the angle of the inner angle of the bottom is 45 +/-10 degrees.
S4: and etching the N-type 4H-SiC epitaxial layer below the inner angle of the inverted trapezoidal anode groove to form two isolation grooves, and etching the tops of two ends of the N-type 4H-SiC epitaxial layer to form two isolation regions.
Specifically, a dry etching process is adopted to etch the N-type 4H-SiC epitaxial layer below the inner angle of the inverted trapezoidal anode groove, and the tops of the two ends of the N-type 4H-SiC epitaxial layer are etched to form an isolation groove and an isolation region respectively. This step S4 can be visually represented by fig. 4 (d).
S5: and filling insulating media in the isolation region and the isolation groove to form a current dredging structure.
Specifically, an epitaxial growth process is adopted to grow the insulating medium 4 in the isolation region and the isolation groove. This step S5 can be visually represented by fig. 4 (e).
S6: and injecting N elements into the part close to the isolation region to form an N + injection region and injecting Al elements into the part close to the inverted trapezoidal anode groove to form a P + injection protection region aiming at the N-type 4H-SiC epitaxial layer between each isolation region and the inverted trapezoidal anode groove.
Specifically, for the N-type 4H-SiC epitaxial layer 3 between each isolation region and the inverted trapezoidal anode groove, an ion implantation process is adopted, N elements are implanted into a portion close to the isolation region to form an N + implantation region 5, and Al elements are implanted into a portion close to the inverted trapezoidal anode groove by the same ion implantation process to form a P + implantation protection region 6. This step S6 can be visually represented by fig. 4 (f).
Preferably, the N + implant region has a height of 0.3 μm to 0.5 μm and a width of 5 μm to 10 μm.
S7: and growing a first passivation layer on the upper surface of the P + injection protection region, and growing a second passivation layer at the bottom of the inverted trapezoidal anode groove.
Here, the first passivation layer 7 and the second passivation layer 8 may each be SiO2And a passivation layer. For example, the step S7 is performed by first depositing SiO on the entire surface of the current sample2A passivation layer; then, the user can use the device to perform the operation,in the SiO2Spin-coating a stripping glue and a photoresist on the passivation layer; photoetching a pattern of a passivation layer to be removed on the photoresist; and then, removing the passivation layer in the pattern by adopting an etching process, and finally removing the stripping glue and the photoresist.
This step S7 can be visually represented by fig. 4 (g).
S8: and manufacturing a cathode ohmic contact metal layer on the upper surface of the N + injection region, and then carrying out thermal annealing treatment.
Specifically, a cathode ohmic contact metal layer 9 is manufactured on the upper surface of the N + injection region 5 by adopting a magnetron sputtering method or an electron beam evaporation method, and then thermal annealing treatment is carried out; the annealing temperature is 950 ℃ to 1000 ℃, and the annealing time is 3 minutes. This step S8 can be visually represented by fig. 4 (h).
S9: and manufacturing an anode Schottky contact metal layer on the partial surface of the first passivation layer close to the inverted trapezoidal anode groove, the surface of the inverted trapezoidal anode groove and the surface of the second passivation layer.
Specifically, an anode schottky contact metal layer 10 is formed on the partial surface of the first passivation layer 7 close to the inverted trapezoidal anode groove, the surface of the inverted trapezoidal anode groove and the surface of the second passivation layer 8 by a magnetron sputtering method or an electron beam evaporation method.
This step S9 can be visually represented by fig. 4 (i).
S10: and manufacturing a third passivation layer on the residual surface of the first passivation layer, and extending the third passivation layer to the anode Schottky contact metal layer and the cathode ohmic contact metal layer which are adjacent to both sides of the first passivation layer.
Specifically, if the third passivation layer 11 is a polyimide passivation layer, polyimide may be directly spin-coated on the remaining surface of the first passivation layer 7, and the polyimide may be spin-coated to cross the boundary to partially cover the anode schottky contact metal layer 10 and the cathode ohmic contact metal layer 9 adjacent to each other on both sides. If SiO is used2、Al2O3、Si3N4Or AlTiO3To fabricate the third passivation layer 11, an epitaxial growth process is used to fabricate the third passivation layer 11.
This step S10 can be visually represented by fig. 4 (j).
The preparation method of the SiC Schottky power diode provided by the embodiment of the invention has the advantages that the Schottky power diode has low material requirement difficulty, the required preparation process is simple, the preparation cost is low, and the high-voltage 4H-SiC Schottky power diode with the voltage of more than 3000V can be produced. The Schottky power diode prepared by the method provided by the embodiment of the invention can work under the high voltage of more than 3000V, and has higher forward conduction capability, reverse characteristic, lower surface leakage current and power consumption and higher reliability.
Optionally, in an implementation manner, the preparation method provided by the embodiment of the present invention may further include: and manufacturing a fourth passivation layer above the insulating medium filled in the isolation region. Therefore, the structure of the SiC schottky power diode manufactured by the embodiment of the invention can be seen from fig. 2.
And a fourth passivation layer is manufactured above the insulating medium filled in the isolation region, so that the surface leakage current of the SiC Schottky power diode can be further reduced. The material of the fourth passivation layer is preferably the same as that of the third passivation layer, and the fourth passivation layer and the third passivation layer can be prepared at the same time; the specific manufacturing process refers to the manufacturing process of the third passivation layer, and details are not repeated here.
It should be noted that, for the embodiments of the product preparation method, since they are substantially similar to the embodiments of the product, the description is simple, and the relevant points can be referred to the partial description of the embodiments of the product.
In the description of the embodiments of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc. indicate orientations and positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed in a particular orientation, and be operated, and therefore should not be considered as limiting the present invention.
In the description of the specification, reference to the description of the term "one embodiment", "some embodiments", "an example", "a specific example", or "some examples", etc., means that a particular feature or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples described in this specification can be combined and combined by those skilled in the art.
While the present application has been described in connection with various embodiments, other variations to the disclosed embodiments can be understood and effected by those skilled in the art in practicing the claimed application, from a review of the drawings, the disclosure, and the appended claims.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.
Claims (10)
1. A SiC schottky power diode, comprising:
an N-type 4H-SiC substrate (1);
a P-type 4H-SiC isolation layer (2) stacked above the N-type 4H-SiC substrate (1);
an N-type 4H-SiC epitaxial layer (3) stacked above the P-type 4H-SiC isolation layer (2); the thickness of the N-type 4H-SiC epitaxial layer (3) is 4-6 mu m;
the middle part of the N-type 4H-SiC epitaxial layer (3) along the horizontal direction is carved with an inverted trapezoidal anode groove and two isolation grooves positioned below the inner angle of the inverted trapezoidal anode groove; the tops of two ends of the N-type 4H-SiC epitaxial layer (3) are inwards avoided to form two isolation regions; insulating media (4) are filled in the isolation region and the isolation groove to form a current dredging structure; n elements are injected into the part, close to the isolation region, of the N-type 4H-SiC epitaxial layer (3) between each isolation region and the inverted trapezoidal anode groove to form an N + injection region (5), and Al elements are injected into the part, close to the inverted trapezoidal anode groove, to form a P + injection protection region (6);
the SiC schottky power diode further includes:
a cathode ohmic contact metal layer (9) covering the N + injection region (5);
a first passivation layer (7) covering the P + implantation protection region (6);
a second passivation layer (8) covering the bottom of the inverted trapezoidal anode groove;
an anode Schottky contact metal layer (10) covering the partial surface of the first passivation layer (7) close to the inverted trapezoidal anode groove, the surface of the inverted trapezoidal anode groove and the surface of the second passivation layer (8);
and the third passivation layer (11) covers the residual surface of the first passivation layer (7) and extends towards the anode Schottky contact metal layer (10) and the cathode ohmic contact metal layer (9) which are adjacent to two sides.
2. The SiC schottky power diode of claim 1, further comprising: and a fourth passivation layer (12) covering the insulation medium (4) filled in the isolation region.
3. The SiC schottky power diode of claim 1 wherein the inverted trapezoidal anode groove has a depth of 1.5 to 2 μm, a bottom width of 5 to 10 μm, and a bottom internal angle of 45 degrees°±10°。
4. The SiC schottky power diode of claim 1 wherein the isolation region has a height and the isolation trench have a depth of 2 to 3 μm and a width of 1 to 2 μm.
5. The SiC schottky power diode as claimed in claim 1, wherein the N + implant region (5) has a height of 0.3 to 0.5 μm and a width of 5 to 10 μm.
6. The SiC schottky power diode according to claim 1, characterized in that the first (7) and the second (8) passivation layers are both SiO2And a passivation layer.
7. The SiC schottky power diode according to claim 2, characterized in that the third passivation layer (11) and the fourth passivation layer (12) are both polyimide passivation layers.
8. The SiC schottky power diode according to claim 1, wherein the cathode ohmic contact metal layer (9) is made of: ni, Ti, NiSi alloy or TiSi alloy.
9. The SiC schottky power diode of claim 1 wherein the anode schottky contact metal layer (10) is made of a material comprising: ti, Ni, W, Au, Pt or Pd.
10. A preparation method of a SiC Schottky power diode is characterized by comprising the following steps:
obtaining an N-type 4H-SiC substrate (1), and depositing P-type 4H-SiC on the upper surface of the N-type 4H-SiC substrate (1) to form a P-type 4H-SiC isolation layer (2);
depositing N-type 4H-SiC with the thickness of 4-6 mu m above the P-type 4H-SiC isolating layer (2) to form an N-type 4H-SiC epitaxial layer (3);
etching the middle part of the N-type 4H-SiC epitaxial layer (3) in the horizontal direction to form an inverted trapezoidal anode groove;
etching the N-type 4H-SiC epitaxial layer below the inner angle of the inverted trapezoidal anode groove to form two isolation grooves, and etching the tops of two ends of the N-type 4H-SiC epitaxial layer (3) to form two isolation regions;
insulating media (4) are filled in the isolation region and the isolation groove to form a current dredging structure;
for the N-type 4H-SiC epitaxial layer (3) between each isolation region and the inverted trapezoidal anode groove, injecting N elements into the part close to the isolation region to form an N + injection region (5), and injecting Al elements into the part close to the inverted trapezoidal anode groove to form a P + injection protection region (6);
growing a first passivation layer (7) on the upper surface of the P + injection protection region (6), and growing a second passivation layer (8) at the bottom of the inverted trapezoidal anode groove;
a cathode ohmic contact metal layer (9) is manufactured on the upper surface of the N + injection region (5), and then thermal annealing treatment is carried out;
manufacturing an anode Schottky contact metal layer (10) on the partial surface of the first passivation layer (7) close to the inverted trapezoidal anode groove, the surface of the inverted trapezoidal anode groove and the surface of the second passivation layer (8);
and manufacturing a third passivation layer (12) on the residual surface of the first passivation layer (7), and extending the third passivation layer (12) to the anode Schottky contact metal layer (10) and the cathode ohmic contact metal layer (9) which are adjacent to both sides of the first passivation layer (7).
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