CN113782451A - Method for improving bonding performance of copper-clad ceramic substrate - Google Patents
Method for improving bonding performance of copper-clad ceramic substrate Download PDFInfo
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- CN113782451A CN113782451A CN202110961042.1A CN202110961042A CN113782451A CN 113782451 A CN113782451 A CN 113782451A CN 202110961042 A CN202110961042 A CN 202110961042A CN 113782451 A CN113782451 A CN 113782451A
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- copper
- ceramic substrate
- clad ceramic
- bonding performance
- improving
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- 239000000758 substrate Substances 0.000 title claims abstract description 58
- 239000000919 ceramic Substances 0.000 title claims abstract description 55
- 238000000034 method Methods 0.000 title claims abstract description 35
- 238000006243 chemical reaction Methods 0.000 claims abstract description 33
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 20
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052786 argon Inorganic materials 0.000 claims abstract description 10
- 239000001257 hydrogen Substances 0.000 claims abstract description 10
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 10
- 238000004140 cleaning Methods 0.000 claims abstract description 7
- 238000007599 discharging Methods 0.000 claims abstract description 6
- 230000035484 reaction time Effects 0.000 claims description 3
- 238000005086 pumping Methods 0.000 claims description 2
- 239000010949 copper Substances 0.000 abstract description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052802 copper Inorganic materials 0.000 abstract description 8
- 230000006872 improvement Effects 0.000 abstract description 8
- 239000007789 gas Substances 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 238000003466 welding Methods 0.000 description 10
- 239000002184 metal Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 230000009471 action Effects 0.000 description 5
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 241000218202 Coptis Species 0.000 description 3
- 235000002991 Coptis groenlandica Nutrition 0.000 description 3
- JJLJMEJHUUYSSY-UHFFFAOYSA-L Copper hydroxide Chemical compound [OH-].[OH-].[Cu+2] JJLJMEJHUUYSSY-UHFFFAOYSA-L 0.000 description 2
- 239000005750 Copper hydroxide Substances 0.000 description 2
- 239000005751 Copper oxide Substances 0.000 description 2
- 229940116318 copper carbonate Drugs 0.000 description 2
- 229910001956 copper hydroxide Inorganic materials 0.000 description 2
- 229910000431 copper oxide Inorganic materials 0.000 description 2
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 description 2
- 229910000009 copper(II) carbonate Inorganic materials 0.000 description 2
- GEZOTWYUIKXWOA-UHFFFAOYSA-L copper;carbonate Chemical compound [Cu+2].[O-]C([O-])=O GEZOTWYUIKXWOA-UHFFFAOYSA-L 0.000 description 2
- 239000011646 cupric carbonate Substances 0.000 description 2
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 description 2
- 229940112669 cuprous oxide Drugs 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000001154 acute effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4864—Cleaning, e.g. removing of solder
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
- Wire Bonding (AREA)
Abstract
The invention relates to the technical field of semiconductors. A method for improving the bonding performance of a copper-clad ceramic substrate comprises the following steps: firstly, placing a copper-clad ceramic substrate into a plugboard frame, and placing the plugboard frame into a reaction cavity; step two, vacuumizing the reaction cavity; introducing argon and hydrogen into the reaction cavity; discharging the electrode to form plasma, and cleaning the surface of the copper-clad ceramic substrate; step five, filling air into the reaction cavity; and step six, taking out the copper-clad ceramic substrate. The patent provides a method for cleaning a copper-clad ceramic substrate by plasma gas to improve the bonding performance of the copper-clad ceramic substrate; after the surface of the copper-clad ceramic substrate is treated, the wettability of the copper surface is obviously improved, and the improvement of the wettability can lead to the improvement of bonding performance.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a processing method of a copper-clad ceramic substrate.
Background
Bonding is a method of using a thin metal wire to make a metal lead wire and a substrate pad tightly welded by using heat, pressure and ultrasonic energy, so as to realize electrical interconnection between chips and a substrate and information intercommunication between chips. Under ideal control conditions, electron sharing or atomic interdiffusion can occur between the lead and the substrate, so that atomic-scale bonding between the two metals is realized.
Gold wire has excellent electrical conductivity, thermal conductivity, corrosion resistance and oxidation resistance, and gold wire is often used as the main material for wire bonding in microelectronic packages. The gold thread and the bonding pad are bonded by generally using a thermosonic bonding process, and the process principle is that under the action of external pressure and ultrasonic frequency vibration, an oxide film on the surface of a metal is removed, the gold thread and the surface of the bonding pad are contacted to form a microscopic welding spot, micro holes between interfaces disappear along with the gradual increase of the area of the welding spot, and metal atoms are mutually diffused under the action of high temperature to form a reliable macroscopic welding spot.
The specific process of binding the gold thread is as follows:
A) locally forming a micro welding spot: under the action of external pressure and ultrasonic waves, an oxide film on the surface of the metal is broken, and a welding spot is formed at a local position;
B) expanding and connecting the micro welding points into a piece: under the continuous action of pressure and ultrasonic waves, the contact area is enlarged, and microscopic welding spots are increased and connected into a whole;
C) atomic diffusion occurs: the space between the interfaces is reduced, and metal atoms are diffused mutually under the action of high temperature;
D) forming a welding spot: the diffusion expands to the volume direction, and the small holes on the interface are small, so that welding spots are formed.
The gold wire bonding process can be seen, and main factors influencing gold wire bonding comprise bonding parameters, pad roughness, pad strength, welding spot contact area, coating quality, surface oxides, pollutants and the like.
Cuprous oxide Cu is formed on the copper surface exposed to air2O, copper oxide CuO, copper carbonate CuCO3Copper hydroxide Cu (OH)2Meanwhile, the copper surface is also polluted by some organic matters, which can influence the wettability of the copper surface and further influence the bonding performance of the copper surface.
How to remove various oxides and organic impurities formed on the surface of copper is a technical problem which needs to be overcome urgently in the field of processing of copper-clad ceramic substrates.
Disclosure of Invention
Aiming at the problems in the prior art, the invention provides a method for improving the bonding performance of a copper-clad ceramic substrate, so as to solve at least one technical problem.
In order to achieve the purpose, the invention provides a method for improving the bonding performance of a copper-clad ceramic substrate, which is characterized by comprising the following steps of:
firstly, placing a copper-clad ceramic substrate into a plugboard frame, and placing the plugboard frame into a reaction cavity;
step two, vacuumizing the reaction cavity;
introducing argon and hydrogen into the reaction cavity;
discharging the electrode to form plasma, and cleaning the surface of the copper-clad ceramic substrate;
step five, filling air into the reaction cavity;
and step six, taking out the copper-clad ceramic substrate.
Further preferably, in the first step, the copper-clad ceramic substrates are vertically arranged in the plugboard frame, and the distance between every two adjacent copper-clad ceramic substrates is greater than 20 mm.
Further preferably, in the second step, the vacuum degree is pumped to 0-200 mT. To balance the effects of ion energy, ion density, and radical density, a suitable chamber pressure needs to be selected.
Further preferably, in the third step, the flow rate of argon is 10-200sccm, the flow rate of hydrogen is 10-200sccm, and the temperature in the reaction chamber is RT (room temperature) ° c.
Further preferably, in step four, the temperature of the reaction chamber is RT +10 ℃.
Further preferably, an upper electrode plate and a lower electrode plate which are arranged up and down are arranged in the reaction cavity;
in the first step, the flashboard frame is placed between an upper electrode board and a lower electrode board, and the upper electrode board and the lower electrode board are connected with two ends of an RF power supply;
and a flow channel for flowing argon and hydrogen is arranged between the upper electrode plate and the lower electrode plate in the reaction cavity.
Further preferably, the power of the RF power source is 100-300W;
and fourthly, discharging the upper electrode plate and the lower electrode plate to form plasma to bombard the surface of the copper-clad ceramic substrate, wherein the reaction time is 100-500 s.
Further preferably, in step five, air is introduced into the reaction chamber, and the air pressure is adjusted to be normal pressure. The time is 180-300 s.
Has the advantages that: 1) the method for cleaning the copper-clad ceramic substrate by plasma gas to improve the bonding performance of the copper-clad ceramic substrate is provided;
2) after the surface of the copper-clad ceramic substrate is treated, the wettability of the copper surface is obviously improved, and the improvement of the wettability can lead to the improvement of bonding performance.
Drawings
FIG. 1 is a flow chart of the present invention;
FIG. 2 is a schematic view of the relative positions of the receptacle frame and the upper and lower electrode plates of the present invention;
FIG. 3 is a schematic view of a plasma reaction according to the present invention;
FIG. 4 is a schematic illustration of an experimental water droplet on the surface of a workpiece before treatment according to the present invention;
FIG. 5 is a schematic illustration of a water droplet experiment on the surface of a workpiece after treatment according to the present invention.
Detailed Description
The invention is further described below with reference to the accompanying drawings.
Specific example 1: referring to fig. 1 to 5, a method for improving bonding performance of a copper-clad ceramic substrate includes the following steps:
firstly, placing a copper-clad ceramic substrate 2 into a plugboard frame 3 and placing the copper-clad ceramic substrate into a reaction cavity;
the copper-clad ceramic substrates 2 are vertically arranged in the plugboard frame 3, and the distance a between every two adjacent copper-clad ceramic substrates is larger than 20 mm.
An upper electrode plate 1 and a lower electrode plate 4 which are arranged up and down are arranged in the reaction cavity;
in the first step, the plugboard frame 3 is arranged between the upper electrode plate 1 and the lower electrode plate 4, and the upper electrode plate and the lower electrode plate are connected with two ends of an RF power supply;
a flow channel for flowing argon and hydrogen is arranged between the upper electrode plate and the lower electrode plate in the reaction cavity.
Step two, vacuumizing the reaction cavity; and step two, pumping the vacuum degree to 0-200 mT.
Introducing argon and hydrogen into the reaction cavity;
in the third step, the flow of argon is 10-200sccm, the flow of hydrogen is 10-200sccm, and the temperature in the reaction chamber is RT ℃ (room temperature).
Discharging the electrode to form plasma, and cleaning the surface of the copper-clad ceramic substrate;
the power of the RF power supply is 100-300W;
the temperature of the reaction chamber was RT +10 ℃. The plasma gas has weak heating effect when being used for treating the surface of the copper-clad ceramic substrate, and the temperature is improved by about 10 ℃.
The reaction time is 100 s-500 s.
Step five, filling air into the reaction cavity;
air is introduced into the reaction cavity, and the air pressure is adjusted to be normal pressure.
And step six, taking out the copper-clad ceramic substrate. And taking out the plugboard frame from the reaction cavity, and taking out the copper-clad ceramic substrate.
The plugboard frame is made of insulating materials. The plugboard frame is provided with a slot for inserting the copper-clad ceramic substrate.
The distance between the upper electrode and the lower electrode is 220-300 mm.
The closer the distance between the upper and lower electrodes (a power electrode, a ground electrode) is, the greater the plasma processing intensity is, and the processing intensity is optimized by optimizing the distance between the upper and lower electrodes.
The plugboard frame is provided with slots for inserting the copper-clad ceramic substrates, and the distance between every two adjacent slots is larger than 20 mm.
Is beneficial to plasma gas to smoothly pass through the surface of the product and fully infiltrate the board surface.
The results of the water drop angle experiments performed on the copper-clad ceramic substrate before and after the treatment of the method for improving the bonding property of the copper-clad ceramic substrate are shown in fig. 4 and 5.
In fig. 4, the water drop angle is an obtuse angle, the left side angle is 105.4 °, and the right side angle is 105.2 °.
In fig. 5, the water drop angle is acute, the left side angle is 19.3 °, and the right side angle is 20.4 °.
The water drop angle can be controlled below 21 degrees by adopting the method of the patent.
Has the advantages that: 1) provides a method for cleaning a copper-clad ceramic substrate by plasma gas to effectively remove cuprous oxide Cu on the surface2O, copper oxide CuO, copper carbonate CuCO3Copper hydroxide Cu (OH)2And organic pollution to improve the bonding performance of the copper-clad ceramic substrate;
2) after the surface of the copper-clad ceramic substrate is treated, the wettability of the copper surface is obviously improved, and the improvement of the wettability can lead to the improvement of bonding performance.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that it is obvious to those skilled in the art that various modifications and improvements can be made without departing from the principle of the present invention, and these modifications and improvements should also be considered as the protection scope of the present invention.
Claims (10)
1. A method for improving the bonding performance of a copper-clad ceramic substrate is characterized by comprising the following steps:
firstly, placing a copper-clad ceramic substrate into a plugboard frame, and placing the plugboard frame into a reaction cavity;
step two, vacuumizing the reaction cavity;
introducing argon and hydrogen into the reaction cavity;
discharging the electrode to form plasma, and cleaning the surface of the copper-clad ceramic substrate;
step five, filling air into the reaction cavity;
and step six, taking out the copper-clad ceramic substrate.
2. The method for improving the bonding performance of the copper-clad ceramic substrate according to claim 1, wherein the method comprises the following steps: in the first step, the copper-clad ceramic substrates are vertically placed in the plugboard frame, and the distance between every two adjacent copper-clad ceramic substrates is larger than 20 mm.
3. The method for improving the bonding performance of the copper-clad ceramic substrate according to claim 1, wherein the method comprises the following steps: and step two, pumping the vacuum degree to 0-200 mT.
4. The method for improving the bonding performance of the copper-clad ceramic substrate according to claim 1, wherein the method comprises the following steps: in the third step, the flow of argon is 10-200sccm, the flow of hydrogen is 10-200sccm, and the temperature in the reaction chamber is RT.
5. The method for improving the bonding performance of the copper-clad ceramic substrate according to claim 1, wherein the method comprises the following steps: in step four, the temperature of the reaction chamber is RT +10 ℃.
6. The method for improving the bonding performance of the copper-clad ceramic substrate according to claim 1, wherein the method comprises the following steps: an upper electrode plate and a lower electrode plate which are arranged up and down are arranged in the reaction cavity;
in the first step, the flashboard frame is placed between an upper electrode board and a lower electrode board, and the upper electrode board and the lower electrode board are connected with two ends of an RF power supply;
and a flow channel for flowing argon and hydrogen is arranged between the upper electrode plate and the lower electrode plate in the reaction cavity.
7. The method for improving the bonding performance of the copper-clad ceramic substrate according to claim 6, wherein the method comprises the following steps: the power of the RF power supply is 100-300W;
and fourthly, discharging the upper electrode plate and the lower electrode plate to form plasma to bombard the surface of the copper-clad ceramic substrate, wherein the reaction time is 100-500 s.
8. The method for improving the bonding performance of the copper-clad ceramic substrate according to claim 1, wherein the method comprises the following steps: and fifthly, introducing air into the reaction cavity, and adjusting the air pressure to be normal pressure.
9. The method for improving the bonding performance of the copper-clad ceramic substrate according to claim 1, wherein the method comprises the following steps: the distance between the upper electrode and the lower electrode is 220-300 mm.
10. The method for improving the bonding performance of the copper-clad ceramic substrate according to claim 1, wherein the method comprises the following steps: the plugboard frame is provided with slots for inserting the copper-clad ceramic substrates, and the distance between every two adjacent slots is larger than 20 mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110961042.1A CN113782451A (en) | 2021-08-20 | 2021-08-20 | Method for improving bonding performance of copper-clad ceramic substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110961042.1A CN113782451A (en) | 2021-08-20 | 2021-08-20 | Method for improving bonding performance of copper-clad ceramic substrate |
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| CN113782451A true CN113782451A (en) | 2021-12-10 |
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| CN202110961042.1A Pending CN113782451A (en) | 2021-08-20 | 2021-08-20 | Method for improving bonding performance of copper-clad ceramic substrate |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115095805A (en) * | 2022-06-29 | 2022-09-23 | 广州市安旭特电子有限公司 | LED light bar and lead wire connection method and LED chip |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102446778A (en) * | 2010-10-08 | 2012-05-09 | 北大方正集团有限公司 | Method for improving wire bonding performance |
| CN105742456A (en) * | 2014-12-12 | 2016-07-06 | 深圳统聚光电有限公司 | COB encapsulation method |
| CN107309220A (en) * | 2017-06-16 | 2017-11-03 | 大连佳峰自动化股份有限公司 | A kind of slicken solder load track element |
| CN113200537A (en) * | 2021-06-17 | 2021-08-03 | 燕山大学 | Copper substrate method for preparing graphene by corrosion CVD (chemical vapor deposition) method |
-
2021
- 2021-08-20 CN CN202110961042.1A patent/CN113782451A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102446778A (en) * | 2010-10-08 | 2012-05-09 | 北大方正集团有限公司 | Method for improving wire bonding performance |
| CN105742456A (en) * | 2014-12-12 | 2016-07-06 | 深圳统聚光电有限公司 | COB encapsulation method |
| CN107309220A (en) * | 2017-06-16 | 2017-11-03 | 大连佳峰自动化股份有限公司 | A kind of slicken solder load track element |
| CN113200537A (en) * | 2021-06-17 | 2021-08-03 | 燕山大学 | Copper substrate method for preparing graphene by corrosion CVD (chemical vapor deposition) method |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115095805A (en) * | 2022-06-29 | 2022-09-23 | 广州市安旭特电子有限公司 | LED light bar and lead wire connection method and LED chip |
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Address after: 224200 No. 18 Hongda Road, Chengdong New District, Dongtai City, Yancheng City, Jiangsu Province Applicant after: Jiangsu fulehua Semiconductor Technology Co.,Ltd. Address before: 224200 No. 18 Hongda Road, Chengdong New District, Dongtai City, Yancheng City, Jiangsu Province Applicant before: JIANGSU FULEDE SEMICONDUCTOR TECHNOLOGY Co.,Ltd. |
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Application publication date: 20211210 |