CN113764543B - 太阳能电池在镀膜生产中提升非晶硅表面洁净度的方法 - Google Patents
太阳能电池在镀膜生产中提升非晶硅表面洁净度的方法 Download PDFInfo
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Abstract
本发明涉及太阳能电池制造领域,公开了太阳能电池在镀膜生产中提升非晶硅表面洁净度的方法,在RPD装置的镀膜过程中,将载板上装载单晶硅片,然后在载板上加盖一个适配的盖板,然后加装盖板的载板依次进入RPD装置的装载腔、前缓冲腔、工艺腔、后缓冲腔、卸载腔和卸载平台,并在卸载平台卸载盖板,同时将单晶硅片进行翻片,重复镀膜过程;通过在待镀透明导电性薄膜的硅片的载板上增加一盖板,避免在镀膜过程中腔体内未被有效利用的透明导电薄膜粉尘在工艺气体的吹扫下附着在硅片上表面的现象,从而提升异质结太阳能电池的光电转换效率和良率,提升了太阳能电池的转换效率;提升设备综合利用率和生产效率;缩短生产周期,降低维护成本。
Description
技术领域
本发明涉及太阳能电池制造领域,更具体的说是涉及一种用于太阳能电池生产中改善异质结太阳能电池透明导电薄膜与非晶硅表面洁净度的方法。
背景技术
目前,随着太阳能电池技术的发展,高效电池的开发越来越受重视。其中用非晶硅本征层(a-Si:H(i))钝化的硅基异质结太阳电池(HJT电池)是重点的研究方向之一。硅基异质结太阳能电池综合了晶体硅电池与薄膜电池的优势,不仅有高的转化效率、高的开路电压,而且具有低的温度系数、无光致衰减(LID)、无电致衰减(PID)、低的制备工艺温度、工艺流程短等优势。
Si:H/c-Si异质结太阳电池与传统热扩散型晶体硅太阳能电池相比,一个重要的不同点是发射极的导电性,Si:H/c-Si异质结太阳电池发射极的导电性较低。为此,在发射极表面需覆盖透明导电薄膜(TCO),其主要作用是作为导电材料,将载流子输运到电池电极,并且尽可能让多的光透过TCO,进入发射区和基区,同时用作减反射层。因此,制备性能优异的TCO薄膜对于进一步提高HJT光电转换效率至关重要。
制备TCO薄膜的方法有很多种,其中反应等离子体沉积法(RPD)由于其具有低离子损伤、低沉积温度、大面积沉积和高生长速率等优点,而被广泛应用于工业生产。
RPD是一种直流电弧(DC arc)电子镀膜设备,需要完成两次下表面镀膜。在镀膜过程中,腔体内未被有效利用的透明导电薄膜粉尘在工艺气体的吹扫下附着在硅片上表面,从而对二次镀膜的稳定性和均匀性造成影响,且硅片表面洁净度下降,造成光电转化效率和良率的降低。并且无效蒸镀会使天板附着过多粉尘,一定周期内需要开腔清洁维护,导致设备综合利用率下降,生产成本增加,生产效率降低。由于目前RPD设备镀膜的方式造成异质结太阳能电池透明导电薄膜与非晶硅表面洁净度较差,造成光电转化效率和良率的降低。通常一定周期内采用破真空、开腔盖等拆卸方式对工艺腔天板进行清洗维护,每次清洗维护期间各程序需要总时长约12h(拆卸安装1h,破真空0.5h,冷却到室温1h,清洗天板2.5h,抽真空7h),每7天需要清理1次。目前技术,RPD设备理论综合利用率为92%,由于开腔清洗维护的原因造成实际设备综合利用率为85%。
因此,如何提供一种在太阳能电池生产过程中减少杂质离子对硅片表面影响的方法是本领域技术人员亟需解决的问题。
发明内容
有鉴于此,本发明旨在提供一种太阳能电池在镀膜生产中提升非晶硅表面洁净度的方法,以至少在一定程度上解决现有技术中的上述技术问题之一。
为了实现上述目的,本发明采用如下技术方案:
太阳能电池在镀膜生产中提升非晶硅表面洁净度的方法,包括以下步骤:
步骤一:对单晶硅片进行制绒处理,形成金字塔形绒面,去除表面的杂质离子并进行表面清洁;
步骤二:通过等离子体化学气相沉积制备正背面的双本征非晶硅层及掺杂非晶硅层;
步骤三:通过RPD装置对经步骤二处理的单晶硅片进一步沉积透明导电薄膜;
具体过程为在RPD装置的载板上装载经步骤二处理的单晶硅片,然后在载板上加盖一个适配的盖板,然后加装盖板的载板依次进入RPD装置的装载腔、前缓冲腔、工艺腔、后缓冲腔、卸载腔和卸载平台,并在卸载平台卸载盖板,同时将经步骤二处理的单晶硅片进行翻片;
步骤四:重复步骤三的流程,对翻片的单晶硅片的进行透明导电薄膜镀膜过程;
步骤五:经步骤四处理的单晶硅片通过丝网印刷形成正、背面金属电极;
步骤六:将步骤五处理的单晶硅片进行烧结固化。
经由上述的技术方案可知,与现有技术相比,本发明公开提供了一种太阳能电池在镀膜生产中提升非晶硅表面洁净度的方法,其优点在于:
通过在待镀透明导电性薄膜的硅片的载板上增加一盖板,避免在镀膜过程中腔体内未被有效利用的透明导电薄膜粉尘在工艺气体的吹扫下附着在硅片上表面的现象,从而提升异质结太阳能电池的光电转换效率和良率,电性能有一定的提升,从而进一步提升了太阳能电池的转换效率;
避免因清洗工艺腔体而开腔,减少开腔次数,提升设备综合利用率;缩短生产周期,降低维护成本;备有足够数量的盖板后,只需要在一定周期后清洗盖板,中间无需因为清洗盖板而停工,实现连续生产,提升生产效率。
优选的,在上述太阳能电池在镀膜生产中提升非晶硅表面洁净度的方法中,在加装盖板时,盖板通过真空吸盘从升降暂存平台上将盖板抓取,对应扣盖在装载单晶硅片的载板上,并在卸载平台通过真空吸盘抓取盖板并回传至回传装置,通过回传装置将盖板重新送至上料区的升降暂存平台。
优选的,在上述太阳能电池在镀膜生产中提升非晶硅表面洁净度的方法中,所述载板为网状镂空结构,即在板面上呈矩形阵列布置多个晶片孔,每个所述晶片孔的内壁均设置用于承载单晶硅片的托板。
优选的,在上述太阳能电池在镀膜生产中提升非晶硅表面洁净度的方法中,所述载板的边缘设置向垂直于板面方向延伸的挡边结构。
优选的,在上述太阳能电池在镀膜生产中提升非晶硅表面洁净度的方法中,所述盖板为与所述载板适配的板状结构,其扣合面设置与所述挡边结构对应的扣边结构,通过所述挡边结构与扣边结构的扣合,使载板与盖板可拆卸连接。
优选的,在上述太阳能电池在镀膜生产中提升非晶硅表面洁净度的方法中,所述盖板的材料为钛合金、铝合金或石金。
优选的,在上述太阳能电池在镀膜生产中提升非晶硅表面洁净度的方法中,所述单晶硅片为N型单晶硅片。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据提供的附图获得其他的附图。
图1为本发明中载板的结构示意图;
图2为本发明中晶片孔的结构示意图;
图3为图2的剖视图;
图4为本发明中盖板的结构示意图。
具体实施方式
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
在本发明的描述中,需要理解的是,术语“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系,仅是为了便于描述本发明和简化描述,而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作,因此不能理解为对本发明的限制。
在本发明中,除非另有明确的规定和限定,术语“安装”、“相连”、“连接”、“固定”等术语应做广义理解,例如,可以是固定连接,也可以是可拆卸连接,或成一体;可以是机械连接,也可以是电连接;可以是直接相连,也可以通过中间媒介间接相连,可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言,可以根据具体情况理解上述术语在本发明中的具体含义。
本发明的太阳能电池在镀膜生产中提升非晶硅表面洁净度的方法,包括以下步骤:
步骤一:对单晶硅片1进行制绒处理,形成金字塔形绒面,去除表面的杂质离子并进行表面清洁;
步骤二:通过等离子体化学气相沉积制备正背面的双本征非晶硅层及掺杂非晶硅层;
步骤三:通过RPD装置对经步骤二处理的单晶硅片1进一步沉积透明导电薄膜;
具体过程为在RPD装置的载板2上装载经步骤二处理的单晶硅片1,然后在载板2上加盖一个适配的盖板3,然后加装盖板3的载板2依次进入RPD装置的装载腔、前缓冲腔、工艺腔、后缓冲腔、卸载腔和卸载平台,并在卸载平台卸载盖板3,同时将经步骤二处理的单晶硅片1进行翻片;
步骤四:重复步骤三的流程,对翻片的单晶硅片1的进行透明导电薄膜镀膜过程;
步骤五:经步骤四处理的单晶硅片1通过丝网印刷形成正、背面金属电极;
步骤六:将步骤五处理的单晶硅片1进行烧结固化。
为了进一步优化上述技术方案,步骤三中,在加装盖板3时,盖板3通过真空吸盘从升降暂存平台上将盖板3抓取,对应扣盖在装载单晶硅片1的载板2上,并在卸载平台通过真空吸盘抓取盖板3并回传至回传装置,通过回传装置将盖板3重新送至上料区的升降暂存平台。
采用此方案,能够形成盖板完整的加载与回收路径,实现自动化控制,并且便于将待清洁的盖板回收清洗,不会因为清洗载板而占用生产时间,大幅提升生产效率。
参阅附图1-3,为了进一步优化上述技术方案,载板2为板状结构,并在板面上呈矩形阵列布置多个晶片孔20,每个晶片孔20的内壁200均设置用于承载单晶硅片1的托板21。
具体的,托板21为环状板。
为了进一步优化上述技术方案,载板2的边缘设置向垂直于板面方向延伸的挡边结构22。
参阅附图4,为了进一步优化上述技术方案,盖板3为与载板2适配的板状结构,其扣合面设置与挡边结构22对应的扣边结构30,通过挡边结构22与扣边结构30的扣合,使载板2与盖板3可拆卸连接。
具体的,挡边结构22与扣边结构30均为环状凸起。
为了进一步优化上述技术方案,盖板3的材料为钛合金、铝合金或石金。
为了进一步优化上述技术方案,单晶硅片1为N型单晶硅片。
本说明书中各个实施例采用递进的方式描述,每个实施例重点说明的都是与其他实施例的不同之处,各个实施例之间相同相似部分互相参见即可。对于实施例公开的装置而言,由于其与实施例公开的方法相对应,所以描述的比较简单,相关之处参见方法部分说明即可。
对所公开的实施例的上述说明,使本领域专业技术人员能够实现或使用本发明。对这些实施例的多种修改对本领域的专业技术人员来说将是显而易见的,本文中所定义的一般原理可以在不脱离本发明的精神或范围的情况下,在其它实施例中实现。因此,本发明将不会被限制于本文所示的这些实施例,而是要符合与本文所公开的原理和新颖特点相一致的最宽的范围。
Claims (6)
1.太阳能电池在镀膜生产中提升非晶硅表面洁净度的方法,其特征在于,包括以下步骤:
步骤一:对单晶硅片(1)进行制绒处理,形成金字塔形绒面,去除表面的杂质离子并进行表面清洁;
步骤二:通过等离子体化学气相沉积制备正背面的双本征非晶硅层及掺杂非晶硅层;
步骤三:通过RPD装置对经步骤二处理的单晶硅片(1)进一步沉积透明导电薄膜;
具体过程为在RPD装置的载板(2)上装载经步骤二处理的单晶硅片(1),然后在载板(2)上加盖一个适配的盖板(3),然后加装盖板(3)的载板(2)依次进入RPD装置的装载腔、前缓冲腔、工艺腔、后缓冲腔、卸载腔和卸载平台,并在卸载平台卸载盖板(3),同时将经步骤二处理的单晶硅片(1)进行翻片;
在加装盖板(3)时,盖板(3)通过真空吸盘从升降暂存平台上将盖板(3)抓取,对应扣盖在装载单晶硅片(1)的载板(2)上,并在卸载平台通过真空吸盘抓取盖板(3)并回传至回传装置,通过回传装置将盖板(3)重新送至上料区的升降暂存平台;
步骤四:重复步骤三的流程,对翻片的单晶硅片(1)的进行透明导电薄膜镀膜过程;
步骤五:经步骤四处理的单晶硅片(1)通过丝网印刷形成正、背面金属电极;
步骤六:将步骤五处理的单晶硅片(1)进行烧结固化。
2.根据权利要求1所述的太阳能电池在镀膜生产中提升非晶硅表面洁净度的方法,其特征在于,所述载板(2)为网状镂空结构,即在板面上呈矩形阵列布置多个晶片孔(20),每个所述晶片孔(20)的内壁(200)均设置用于承载单晶硅片(1)的托板(21)。
3.根据权利要求2所述的太阳能电池在镀膜生产中提升非晶硅表面洁净度的方法,其特征在于,所述载板(2)的边缘设置向垂直于板面方向延伸的挡边结构(22)。
4.根据权利要求3所述的太阳能电池在镀膜生产中提升非晶硅表面洁净度的方法,其特征在于,所述盖板(3)为与所述载板(2)适配的板状结构,其扣合面设置与所述挡边结构(22)对应的扣边结构(30),通过所述挡边结构(22)与扣边结构(30)的扣合,使载板(2)与盖板(3)可拆卸连接。
5.根据权利要求4所述的太阳能电池在镀膜生产中提升非晶硅表面洁净度的方法,其特征在于,所述盖板(3)的材料为钛合金或铝合金。
6.根据权利要求5所述的太阳能电池在镀膜生产中提升非晶硅表面洁净度的方法,其特征在于,所述单晶硅片(1)为N型单晶硅片。
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