CN113728449B - 组合物 - Google Patents

组合物 Download PDF

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Publication number
CN113728449B
CN113728449B CN202080030609.7A CN202080030609A CN113728449B CN 113728449 B CN113728449 B CN 113728449B CN 202080030609 A CN202080030609 A CN 202080030609A CN 113728449 B CN113728449 B CN 113728449B
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CN
China
Prior art keywords
group
substrate
composition
substituent
organic semiconductor
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CN202080030609.7A
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English (en)
Chinese (zh)
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CN113728449A (zh
Inventor
中村刚希
杉浦宽记
谷征夫
松下哲也
渡边哲也
竹谷纯一
冈本敏宏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
University of Tokyo NUC
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Fujifilm Corp
University of Tokyo NUC
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Publication of CN113728449A publication Critical patent/CN113728449A/zh
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D471/00—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00
    • C07D471/22—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00 in which the condensed systems contains four or more hetero rings
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
    • C09D5/24—Electrically-conducting paints
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
    • C09D7/20—Diluents or solvents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
    • H01B1/12—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances organic substances
    • H01B1/121—Charge-transfer complexes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/621—Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Thin Film Transistor (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
CN202080030609.7A 2019-04-24 2020-04-21 组合物 Active CN113728449B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019-082825 2019-04-24
JP2019082825 2019-04-24
PCT/JP2020/017188 WO2020218293A1 (ja) 2019-04-24 2020-04-21 組成物

Publications (2)

Publication Number Publication Date
CN113728449A CN113728449A (zh) 2021-11-30
CN113728449B true CN113728449B (zh) 2025-04-11

Family

ID=72941914

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080030609.7A Active CN113728449B (zh) 2019-04-24 2020-04-21 组合物

Country Status (4)

Country Link
US (1) US11785845B2 (https=)
JP (1) JP7329804B2 (https=)
CN (1) CN113728449B (https=)
WO (1) WO2020218293A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025205379A1 (ja) * 2024-03-27 2025-10-02 富士フイルム株式会社 組成物

Citations (2)

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CN1881642A (zh) * 2005-06-18 2006-12-20 三星Sdi株式会社 构图纳米导电薄膜的方法
CN109478595A (zh) * 2016-06-27 2019-03-15 富士胶片株式会社 有机薄膜晶体管、有机半导体膜、化合物、有机薄膜晶体管用组合物及有机薄膜晶体管的制造方法

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US8268578B2 (en) * 2007-07-11 2012-09-18 Tsumura & Co. Method of bioassaying yokukansan
JP5196988B2 (ja) 2007-12-21 2013-05-15 スリーエム イノベイティブ プロパティズ カンパニー インク組成物、その製造方法、そのインク組成物を用いて形成した電極触媒層及びこれらの用途
WO2013180801A1 (en) 2012-04-06 2013-12-05 Massachussetts Institute Of Technology Methods for deposition of materials including mechanical abrasion
WO2014164224A1 (en) * 2013-03-13 2014-10-09 Saudi Basic Industries Corporation Semiconductor polymers
JP5984748B2 (ja) * 2013-07-01 2016-09-06 富士フイルム株式会社 熱電変換素子および熱電変換モジュール
BR102013031176B1 (pt) 2013-12-04 2020-11-24 Centro De Tecnologia Da Informação Renato Archer - Cti composição híbrida de peptídeos e semicondutores orgânicos aplicada na manufatura de dispositivos eletrônicos e seu processo de obtenção
JP6082927B2 (ja) 2014-03-26 2017-02-22 富士フイルム株式会社 有機トランジスタ、化合物、非発光性有機半導体デバイス用有機半導体材料、有機トランジスタ用材料、非発光性有機半導体デバイス用塗布液、有機トランジスタの製造方法、有機半導体膜の製造方法、非発光性有機半導体デバイス用有機半導体膜、有機半導体材料の合成方法
TWI671343B (zh) * 2014-06-27 2019-09-11 Fujifilm Corporation 熱硬化性樹脂組成物、硬化膜、硬化膜的製造方法以及半導體裝置
EP3270430B1 (en) * 2015-03-13 2020-12-09 FUJIFILM Corporation Organic semiconductor film formation composition, organic thin film transistor, electronic paper, and display device
JP6442057B2 (ja) * 2015-07-07 2018-12-19 富士フイルム株式会社 有機半導体素子、化合物、有機半導体組成物、並びに、有機半導体膜及びその製造方法
EP3333916B1 (en) * 2015-08-04 2020-11-18 Fujifilm Corporation Organic thin-film transistor, organic thin-film transistor manufacturing method, organic thin-film transistor material, organic thin-film transistor composition, organic semiconductor film, and compound
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1881642A (zh) * 2005-06-18 2006-12-20 三星Sdi株式会社 构图纳米导电薄膜的方法
CN109478595A (zh) * 2016-06-27 2019-03-15 富士胶片株式会社 有机薄膜晶体管、有机半导体膜、化合物、有机薄膜晶体管用组合物及有机薄膜晶体管的制造方法

Non-Patent Citations (3)

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"Direct Synthesis of Large-Scale Ortho-Iodinated Perylene Diimides: Key Precursors for Functional Dyes";Jiajun Wu等;《Organic LETTERS》;20171231(第19期);第5438−5441页 *
"Solvent Directed Morphogenesis and Electrical Properties of a Peptide−Perylenediimide Conjugate";Sahnawaz Ahmed等;《LANGMUIR》;20181231(第34期);第8355-8364页 *
Sahnawaz Ahmed等."Solvent Directed Morphogenesis and Electrical Properties of a Peptide−Perylenediimide Conjugate".《LANGMUIR》.2018,(第34期),第8355-8364页. *

Also Published As

Publication number Publication date
CN113728449A (zh) 2021-11-30
WO2020218293A1 (ja) 2020-10-29
JP7329804B2 (ja) 2023-08-21
US20220045283A1 (en) 2022-02-10
JPWO2020218293A1 (https=) 2020-10-29
US11785845B2 (en) 2023-10-10

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