JP7329804B2 - 組成物 - Google Patents

組成物 Download PDF

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Publication number
JP7329804B2
JP7329804B2 JP2021516134A JP2021516134A JP7329804B2 JP 7329804 B2 JP7329804 B2 JP 7329804B2 JP 2021516134 A JP2021516134 A JP 2021516134A JP 2021516134 A JP2021516134 A JP 2021516134A JP 7329804 B2 JP7329804 B2 JP 7329804B2
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JP
Japan
Prior art keywords
group
substrate
composition
substituent
organic semiconductor
Prior art date
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Application number
JP2021516134A
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English (en)
Japanese (ja)
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JPWO2020218293A5 (https=
JPWO2020218293A1 (https=
Inventor
剛希 中村
寛記 杉浦
征夫 谷
哲也 松下
哲也 渡邉
純一 竹谷
敏宏 岡本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
University of Tokyo NUC
Original Assignee
Fujifilm Corp
University of Tokyo NUC
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Publication of JPWO2020218293A1 publication Critical patent/JPWO2020218293A1/ja
Publication of JPWO2020218293A5 publication Critical patent/JPWO2020218293A5/ja
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D471/00—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00
    • C07D471/22—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00 in which the condensed systems contains four or more hetero rings
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
    • C09D5/24—Electrically-conducting paints
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
    • C09D7/20—Diluents or solvents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
    • H01B1/12—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances organic substances
    • H01B1/121—Charge-transfer complexes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/621—Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Thin Film Transistor (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
JP2021516134A 2019-04-24 2020-04-21 組成物 Active JP7329804B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019082825 2019-04-24
JP2019082825 2019-04-24
PCT/JP2020/017188 WO2020218293A1 (ja) 2019-04-24 2020-04-21 組成物

Publications (3)

Publication Number Publication Date
JPWO2020218293A1 JPWO2020218293A1 (https=) 2020-10-29
JPWO2020218293A5 JPWO2020218293A5 (https=) 2022-01-24
JP7329804B2 true JP7329804B2 (ja) 2023-08-21

Family

ID=72941914

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021516134A Active JP7329804B2 (ja) 2019-04-24 2020-04-21 組成物

Country Status (4)

Country Link
US (1) US11785845B2 (https=)
JP (1) JP7329804B2 (https=)
CN (1) CN113728449B (https=)
WO (1) WO2020218293A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025205379A1 (ja) * 2024-03-27 2025-10-02 富士フイルム株式会社 組成物

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006351543A (ja) 2005-06-18 2006-12-28 Samsung Sdi Co Ltd ナノ導電性膜のパターニング方法
JP2009152112A (ja) 2007-12-21 2009-07-09 Three M Innovative Properties Co インク組成物、その製造方法、そのインク組成物を用いて形成した電極触媒層及びこれらの用途
WO2013180801A1 (en) 2012-04-06 2013-12-05 Massachussetts Institute Of Technology Methods for deposition of materials including mechanical abrasion
JP2018006745A (ja) 2016-06-27 2018-01-11 富士フイルム株式会社 有機薄膜トランジスタ、有機半導体膜、化合物、有機薄膜トランジスタ用組成物及び有機薄膜トランジスタの製造方法

Family Cites Families (11)

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Publication number Priority date Publication date Assignee Title
US8268578B2 (en) * 2007-07-11 2012-09-18 Tsumura & Co. Method of bioassaying yokukansan
WO2014164224A1 (en) * 2013-03-13 2014-10-09 Saudi Basic Industries Corporation Semiconductor polymers
JP5984748B2 (ja) * 2013-07-01 2016-09-06 富士フイルム株式会社 熱電変換素子および熱電変換モジュール
BR102013031176B1 (pt) 2013-12-04 2020-11-24 Centro De Tecnologia Da Informação Renato Archer - Cti composição híbrida de peptídeos e semicondutores orgânicos aplicada na manufatura de dispositivos eletrônicos e seu processo de obtenção
JP6082927B2 (ja) 2014-03-26 2017-02-22 富士フイルム株式会社 有機トランジスタ、化合物、非発光性有機半導体デバイス用有機半導体材料、有機トランジスタ用材料、非発光性有機半導体デバイス用塗布液、有機トランジスタの製造方法、有機半導体膜の製造方法、非発光性有機半導体デバイス用有機半導体膜、有機半導体材料の合成方法
TWI671343B (zh) * 2014-06-27 2019-09-11 Fujifilm Corporation 熱硬化性樹脂組成物、硬化膜、硬化膜的製造方法以及半導體裝置
EP3270430B1 (en) * 2015-03-13 2020-12-09 FUJIFILM Corporation Organic semiconductor film formation composition, organic thin film transistor, electronic paper, and display device
JP6442057B2 (ja) * 2015-07-07 2018-12-19 富士フイルム株式会社 有機半導体素子、化合物、有機半導体組成物、並びに、有機半導体膜及びその製造方法
EP3333916B1 (en) * 2015-08-04 2020-11-18 Fujifilm Corporation Organic thin-film transistor, organic thin-film transistor manufacturing method, organic thin-film transistor material, organic thin-film transistor composition, organic semiconductor film, and compound
US9531400B1 (en) * 2015-11-04 2016-12-27 Avnera Corporation Digitally calibrated successive approximation register analog-to-digital converter
WO2018003701A1 (ja) * 2016-06-27 2018-01-04 富士フイルム株式会社 有機薄膜トランジスタ、有機半導体膜、化合物、有機薄膜トランジスタ用組成物及び有機薄膜トランジスタの製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006351543A (ja) 2005-06-18 2006-12-28 Samsung Sdi Co Ltd ナノ導電性膜のパターニング方法
JP2009152112A (ja) 2007-12-21 2009-07-09 Three M Innovative Properties Co インク組成物、その製造方法、そのインク組成物を用いて形成した電極触媒層及びこれらの用途
WO2013180801A1 (en) 2012-04-06 2013-12-05 Massachussetts Institute Of Technology Methods for deposition of materials including mechanical abrasion
JP2018006745A (ja) 2016-06-27 2018-01-11 富士フイルム株式会社 有機薄膜トランジスタ、有機半導体膜、化合物、有機薄膜トランジスタ用組成物及び有機薄膜トランジスタの製造方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
AHMED, Sahnawaz et al.，LANGMUIR，2018年，Vol.34，p.8355-8364
WU, Jiajun et al.，Organic Letters，Vol.19，2017年，p.5438-5441

Also Published As

Publication number Publication date
CN113728449A (zh) 2021-11-30
CN113728449B (zh) 2025-04-11
WO2020218293A1 (ja) 2020-10-29
US20220045283A1 (en) 2022-02-10
JPWO2020218293A1 (https=) 2020-10-29
US11785845B2 (en) 2023-10-10

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