CN113721427B - 曝光装置、曝光方法以及物品的制造方法 - Google Patents

曝光装置、曝光方法以及物品的制造方法 Download PDF

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Publication number
CN113721427B
CN113721427B CN202110549216.3A CN202110549216A CN113721427B CN 113721427 B CN113721427 B CN 113721427B CN 202110549216 A CN202110549216 A CN 202110549216A CN 113721427 B CN113721427 B CN 113721427B
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China
Prior art keywords
wavelength
illumination
wavelength range
light
intensity distribution
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Chinese (zh)
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CN113721427A (zh
Inventor
八讲学
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Canon Inc
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Canon Inc
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Publication of CN113721427A publication Critical patent/CN113721427A/zh
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70125—Use of illumination settings tailored to particular mask patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Microscoopes, Condenser (AREA)
CN202110549216.3A 2020-05-25 2021-05-20 曝光装置、曝光方法以及物品的制造方法 Active CN113721427B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020-090174 2020-05-25
JP2020090174A JP7570826B2 (ja) 2020-05-25 2020-05-25 露光装置、露光方法、及び物品の製造方法

Publications (2)

Publication Number Publication Date
CN113721427A CN113721427A (zh) 2021-11-30
CN113721427B true CN113721427B (zh) 2023-12-22

Family

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CN202110549216.3A Active CN113721427B (zh) 2020-05-25 2021-05-20 曝光装置、曝光方法以及物品的制造方法

Country Status (4)

Country Link
JP (1) JP7570826B2 (enExample)
KR (1) KR20210145658A (enExample)
CN (1) CN113721427B (enExample)
TW (1) TWI851886B (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7751484B2 (ja) * 2021-12-27 2025-10-08 キヤノン株式会社 露光装置及び物品の製造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06163362A (ja) * 1992-11-25 1994-06-10 Nikon Corp 投影露光装置
JPH11317362A (ja) * 1999-03-05 1999-11-16 Nikon Corp 走査型露光装置、および該装置を用いるデバイス製造方法
JP2014135368A (ja) * 2013-01-09 2014-07-24 Canon Inc 露光装置、計測方法及びデバイスの製造方法
JP2018054992A (ja) * 2016-09-30 2018-04-05 キヤノン株式会社 照明光学系、露光装置、及び物品の製造方法
CN109891322A (zh) * 2016-09-20 2019-06-14 卡尔蔡司Smt有限责任公司 投射曝光方法和微光刻的投射曝光设备
WO2019146448A1 (ja) * 2018-01-24 2019-08-01 株式会社ニコン 露光装置及び露光方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3044778B2 (ja) * 1990-11-14 2000-05-22 株式会社ニコン 投影露光装置および投影露光方法
JP2884950B2 (ja) * 1992-10-09 1999-04-19 株式会社ニコン 投影露光装置、露光方法および半導体集積回路の製造方法
US5552856A (en) * 1993-06-14 1996-09-03 Nikon Corporation Projection exposure apparatus
US7723014B2 (en) 2005-10-26 2010-05-25 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for photolithography in semiconductor manufacturing
WO2010032753A1 (ja) * 2008-09-18 2010-03-25 株式会社ニコン 開口絞り、光学系、露光装置及び電子デバイスの製造方法
KR101855612B1 (ko) * 2012-08-28 2018-05-04 가부시키가이샤 니콘 패턴 형성 장치, 및 기판 지지 장치
JP5843905B2 (ja) * 2013-04-23 2016-01-13 キヤノン株式会社 照明光学系、露光装置及びデバイス製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06163362A (ja) * 1992-11-25 1994-06-10 Nikon Corp 投影露光装置
JPH11317362A (ja) * 1999-03-05 1999-11-16 Nikon Corp 走査型露光装置、および該装置を用いるデバイス製造方法
JP2014135368A (ja) * 2013-01-09 2014-07-24 Canon Inc 露光装置、計測方法及びデバイスの製造方法
CN109891322A (zh) * 2016-09-20 2019-06-14 卡尔蔡司Smt有限责任公司 投射曝光方法和微光刻的投射曝光设备
JP2018054992A (ja) * 2016-09-30 2018-04-05 キヤノン株式会社 照明光学系、露光装置、及び物品の製造方法
WO2019146448A1 (ja) * 2018-01-24 2019-08-01 株式会社ニコン 露光装置及び露光方法

Also Published As

Publication number Publication date
JP2021185393A (ja) 2021-12-09
KR20210145658A (ko) 2021-12-02
TWI851886B (zh) 2024-08-11
TW202144928A (zh) 2021-12-01
CN113721427A (zh) 2021-11-30
JP7570826B2 (ja) 2024-10-22

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