CN113555425A - Trench type separation gate IGBT structure and manufacturing method thereof - Google Patents
Trench type separation gate IGBT structure and manufacturing method thereof Download PDFInfo
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- CN113555425A CN113555425A CN202110841210.3A CN202110841210A CN113555425A CN 113555425 A CN113555425 A CN 113555425A CN 202110841210 A CN202110841210 A CN 202110841210A CN 113555425 A CN113555425 A CN 113555425A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 238000000926 separation method Methods 0.000 title claims abstract description 11
- 238000005530 etching Methods 0.000 claims abstract description 27
- 239000002184 metal Substances 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 238000002955 isolation Methods 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 10
- 230000008569 process Effects 0.000 claims abstract description 9
- 238000001259 photo etching Methods 0.000 claims description 27
- 238000000151 deposition Methods 0.000 claims description 17
- 230000003647 oxidation Effects 0.000 claims description 17
- 238000007254 oxidation reaction Methods 0.000 claims description 17
- 238000002347 injection Methods 0.000 claims description 11
- 239000007924 injection Substances 0.000 claims description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 9
- 238000000137 annealing Methods 0.000 claims description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 9
- 150000002500 ions Chemical class 0.000 claims description 8
- 230000001681 protective effect Effects 0.000 claims description 6
- 230000004888 barrier function Effects 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 3
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 7
- 238000010586 diagram Methods 0.000 description 7
- 230000008901 benefit Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
- H01L29/66348—Vertical insulated gate bipolar transistors with a recessed gate
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
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Abstract
The invention relates to the technical field of Insulated Gate Bipolar Transistor (IGBT) and discloses a trench type isolated gate IGBT structure and a manufacturing method thereof, wherein the trench type isolated gate IGBT structure comprises a collector metal and a p + collector: the top of collecting electrode metal is equipped with n type substrate, and the inside of n type substrate is equipped with the groove body of regularly arranging, and the bottom of the groove body is equipped with slot emitting electrode gate oxide and lower slot emitting electrode polycrystal layer down, and the top of lower slot emitting electrode polycrystal layer is equipped with the isolation oxide layer, and the top of isolating oxide layer is equipped with slot gate oxide layer. According to the groove type separation gate IGBT structure and the manufacturing method thereof, the upper and lower structure separation gates can be formed by carrying out unique twice groove etching processes, so that the Miller capacitance of an IGBT device is reduced, the effect of effectively reducing the switching loss is achieved, and the problem that the IGBT turn-off loss rises along with the continuous increase of the applied power in the prior art is solved under the effect of effectively improving the separation gate IGBT structure in the prior groove.
Description
Technical Field
The invention relates to the technical field of Insulated Gate Bipolar Transistors (IGBT), in particular to a trench type isolated gate IGBT structure and a manufacturing method thereof.
Background
The IGBT is used as a novel power semiconductor field control self-turn-off device, integrates the high-speed performance of a power MOSFET and the low resistance of a bipolar device, has the characteristics of high input impedance, low voltage control power consumption, simple control circuit, high voltage resistance, large bearing current and the like, and is widely applied to various power conversion.
In the prior art, as the application power is continuously increased, the turn-off loss of the IGBT is increased, so that the existing trench type split gate IGBT structure is difficult to realize effective improvement on the inside, and the benefit of obviously reducing the switching loss of the IGBT is achieved.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a trench type separation gate IGBT structure and a manufacturing method thereof, which have the advantages of effectively reducing the switching loss through a unique twice trench etching process and solve the problem of high IGBT switching loss in the prior art.
The invention provides the following technical scheme: a trench type split gate IGBT structure and a manufacturing method thereof comprise a collector metal and a p + collector:
the top of collecting electrode metal is equipped with n type substrate, the inside of n type substrate is equipped with the groove body of regularly arranging, the bottom of the groove body is equipped with slot emitting electrode gate oxide layer and lower slot emitting electrode polycrystal layer down, the top of slot emitting electrode polycrystal layer is equipped with the isolation oxide layer down, the top of isolating oxide layer is equipped with slot grid oxide layer, the top of going up slot grid oxide layer is equipped with slot grid polycrystal layer, the both sides distribution at groove body middle part has p type well, the inside of p type well is equipped with n + type launch site and p + type short-circuit district, the top of the groove body is equipped with protective oxide layer and emitting electrode metal, the emitting electrode metal is located protective oxide layer's top.
Preferably, the trench body is etched twice to form a body trench type split gate IGBT structure.
A trench type isolated gate IGBT structure and a manufacturing method thereof comprise the following steps:
s1, depositing a 5000A dense oxide layer on the surface of the n-type substrate as a hard mask;
s2, carrying out first photoetching, and photoetching a first groove body etching window on the top of the hard mask through photoetching and etching processes;
s3, etching the trench body for the first time by 3.5 microns, performing high-temperature sacrificial oxidation, removing the sacrificial oxidation, and growing an upper trench gate oxide layer;
s4, depositing a silicon nitride (SIN) barrier layer;
s5, etching the groove body for the second time by 2.5 microns, performing high-temperature sacrificial oxidation, removing the sacrificial oxidation, and growing a lower groove emitter gate oxide layer;
s6, removing upper trench silicon nitride (SIN), depositing a lower trench emitter polycrystalline layer, etching back to etch the lower trench emitter polycrystalline layer, depositing an isolation oxide layer, and etching back to etch the isolation oxide layer;
s7, depositing an upper groove grid polycrystalline layer, and etching back the upper groove grid polycrystalline layer;
s8, carrying out third photoetching, photoetching a p-type well (BODY) injection window at the top of the n-type epitaxial layer through photoetching, carrying out BODY injection, and annealing to form a p-type well;
s9, photoetching for the fourth time to form an n + type emitting area injection window, injecting n + ions, and depositing an oxide layer by chemical vapor deposition;
s10, carrying out fifth photoetching, etching an emitter contact hole through a photoetching process, injecting p + ions, and annealing for 30 minutes in a nitrogen atmosphere at the temperature of 875 ℃;
s11, setting a contact window, respectively setting a metal layer and an oxidation layer on the top of the structure finished part, respectively forming an emitter and a grid on the oxidation layer by setting the metal layer, removing the back of the n-type substrate, injecting from the back of the p + collector by ion injection, annealing at 400 ℃, setting a metal material layer to form collector metal.
Compared with the prior art, the invention has the following beneficial effects:
according to the groove type separation gate IGBT structure and the manufacturing method thereof, the upper and lower structure separation gates can be formed by carrying out unique twice groove body etching processes, so that the Miller capacitance of an IGBT device is reduced, the effect of effectively reducing the switching loss is achieved, the problem that the IGBT turn-off loss is increased along with the continuous increase of the applied power in the prior art is solved under the effect of effectively improving the separation gate IGBT structure in the prior groove, and the good social value is achieved.
Drawings
FIG. 1 is a first schematic structural diagram of steps S1 and S2 according to the disclosure of the present invention;
FIG. 2 is a first schematic structural diagram of steps S3 and S4 according to the disclosure of the present invention;
FIG. 3 is a first structural diagram of step S5 according to the embodiment of the present invention;
FIG. 4 is a first structural diagram of steps S6 and S7 according to the disclosure of the present invention;
FIG. 5 is a first structural diagram of steps S8 and S9 according to the embodiment of the present invention;
FIG. 6 is a first structural diagram of step S10 according to the embodiment of the present invention;
fig. 7 is a first structural schematic diagram of step S11 according to the embodiment of the present invention.
In the figure: 1. a collector metal; 2. a p + collector electrode; 3. an n-type substrate; 4. a hard mask; 5. an upper trench gate oxide layer; 6. a silicon nitride barrier layer; 7. a trench body; 8. a gate oxide layer of an emitter of the lower groove; 9. a lower trench emitter poly layer; 10. isolating the oxide layer; 11. an upper trench gate poly layer; 12. a p-type well; 13. an n + type emitter region; 14. a p + type short circuit region; 15. protecting the oxide layer; 16. an emitter metal.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1-7, a trench type split gate IGBT structure and a method for fabricating the same includes a collector metal 1 and a p + collector 2:
Wherein; the trench body 7 is etched twice to form a body trench type split gate IGBT structure.
A trench type isolated gate IGBT structure and a manufacturing method thereof comprise the following steps:
s1, depositing a 5000A dense oxide layer on the surface of the n-type substrate 3 to be used as a hard mask 4;
s2, carrying out first photoetching, and photoetching a first groove body 7 etching window on the top of the hard mask 4 through photoetching and etching processes;
s3, etching the first trench body 7 by 3.5 microns, performing high-temperature sacrificial oxidation, removing the sacrificial oxidation, and growing the upper trench gate oxide layer 5;
s4, depositing a silicon nitride barrier layer 6;
s5, etching the groove body 7 for the second time by 2.5 microns, performing high-temperature sacrificial oxidation, removing the sacrificial oxidation, and growing a lower groove emitter gate oxide layer 8;
s6, removing the silicon nitride of the upper groove, depositing the polycrystalline layer 9 of the emitter of the lower groove, etching back to etch the polycrystalline layer 9 of the emitter of the lower groove, depositing the isolation oxide layer 10, and etching back to etch the isolation oxide layer 10;
s7, depositing the upper groove gate polycrystalline layer 11, and etching back the upper groove gate polycrystalline layer 11;
s8, carrying out third photoetching, photoetching a p-type well 12BODY injection window at the top of the n-type epitaxial layer through photoetching, carrying out BODY injection, and annealing to form the p-type well 12;
s9, photoetching for the fourth time to form an injection window of the n + type emission region 13, injecting n + ions, and depositing an oxide layer by chemical vapor deposition;
s10, carrying out fifth photoetching, etching an emitter contact hole through a photoetching process, injecting p + ions, and annealing for 30 minutes in a nitrogen atmosphere at the temperature of 875 ℃;
s11, setting contact windows, respectively setting a metal layer and an oxide layer on the top of the structure finished part and respectively forming an emitter and a gate on the oxide layer by setting the metal layer, removing the back of the n-type substrate 3, injecting from the back of the p + collector 2 by ion implantation, annealing at 400 ℃, setting a metal material layer to form a collector metal 1.
The theory of operation, this IGBT structure is before the use, utilize and make and carry out effective use work to the concrete step of whole IGBT structure manufacturing, this IGBT structure is when using, carry out unique twice sculpture ditch groove body 7 technology when utilizing to make, make the inside structure separation bars about forming of overall structure, thereby reduce under the effect of IGBT device miller electric capacity, play and reduce the switching loss effect effectively, and overcome and continuously increase along with applied power among the conventional art, thereby lead to the higher problem of IGBT turn-off loss, reach good economic benefits and social practical value, this IGBT structure is after the use is accomplished, when making whole stop work, effectively seal up the effect to the whole.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (3)
1. A trench-type split gate IGBT structure and a manufacturing method thereof are characterized by comprising a collector metal (1) and a p + collector (2):
the upper portion of the collector metal (1) is provided with an n-type substrate (3), the inside of the n-type substrate (3) is provided with a groove body (7) which is regularly arranged, the bottom of the groove body (7) is provided with a lower groove emitter grid oxide layer (8) and a lower groove emitter polycrystalline layer (9), the top of the lower groove emitter polycrystalline layer (9) is provided with an isolation oxide layer (10), an upper groove grid gate oxide layer (5) is arranged above the isolation oxide layer (10), an upper groove grid polycrystalline layer (11) is arranged above the upper groove grid gate oxide layer (5), p-type wells (12) are distributed on two sides of the middle portion of the groove body (7), an n + type emitting region (13) and a p + type short circuit region (14) are arranged inside the p-type wells (12), a protective oxide layer (15) and an emitter metal (16) are arranged on the top of the groove body (7), the emitter metal (16) is located above the protective oxide layer (15).
2. The trench type split gate IGBT structure and the manufacturing method thereof according to claim 1, characterized in that: and the groove body (7) is etched twice to form a body groove type separation gate IGBT structure.
3. A trench type isolated gate IGBT structure and a manufacturing method thereof are characterized by comprising the following steps:
s1, depositing a 5000A dense oxide layer on the surface of the n-type substrate (3) to be used as a hard mask (4);
s2, carrying out first photoetching, and photoetching a first-time groove body (7) etching window at the top of the hard mask (4) through photoetching and etching processes;
s3, etching the first groove body (7) for 3.5 microns, performing high-temperature sacrificial oxidation, removing the sacrificial oxidation, and growing an upper groove grid oxidation layer (5);
s4, depositing a silicon nitride barrier layer (6);
s5, etching the groove body (7) for the second time for 2.5 microns, performing high-temperature sacrificial oxidation, removing the sacrificial oxidation, and growing a lower groove emitter gate oxide layer (8);
s6, removing the upper trench silicon nitride, depositing a lower trench emitter polycrystalline layer (9), etching back the lower trench emitter polycrystalline layer (9), depositing an isolation oxide layer (10), and etching back the isolation oxide layer (10);
s7, depositing an upper groove grid polycrystalline layer (11), and etching back the upper groove grid polycrystalline layer (11);
s8, carrying out third photoetching, photoetching a p-type well (12) (BODY) injection window at the top of the n-type epitaxial layer through photoetching, carrying out BODY injection, and annealing to form the p-type well (12);
s9, photoetching for the fourth time to form an n + type emitting region (13) injection window, injecting n + ions, and carrying out chemical vapor deposition on an oxide layer;
s10, carrying out fifth photoetching, etching an emitter contact hole through a photoetching process, injecting p + ions, and annealing for 30 minutes in a nitrogen atmosphere at the temperature of 875 ℃;
s11, setting a contact window, respectively setting a metal layer and an oxidation layer on the top of the structure finished part, respectively setting the metal layer on the oxidation layer to form an emitter and a grid, respectively removing the back of the n-type substrate (3), injecting from the back of the p + collector (2) through ion injection, annealing at 400 ℃, setting a metal material layer to form a collector metal (1).
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114050184A (en) * | 2021-11-10 | 2022-02-15 | 安徽瑞迪微电子有限公司 | Low miller capacitance power device and manufacturing method thereof |
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2021
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114050184A (en) * | 2021-11-10 | 2022-02-15 | 安徽瑞迪微电子有限公司 | Low miller capacitance power device and manufacturing method thereof |
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