CN113544865A - 发光二极管芯片、显示面板以及电子设备 - Google Patents
发光二极管芯片、显示面板以及电子设备 Download PDFInfo
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- CN113544865A CN113544865A CN201980004150.0A CN201980004150A CN113544865A CN 113544865 A CN113544865 A CN 113544865A CN 201980004150 A CN201980004150 A CN 201980004150A CN 113544865 A CN113544865 A CN 113544865A
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- 239000004065 semiconductor Substances 0.000 claims abstract description 138
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 230000004907 flux Effects 0.000 abstract description 10
- 238000005476 soldering Methods 0.000 abstract description 7
- 238000004140 cleaning Methods 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 description 15
- 239000000758 substrate Substances 0.000 description 9
- 239000012535 impurity Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000003574 free electron Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 239000003039 volatile agent Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910018182 Al—Cu Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- YVIMHTIMVIIXBQ-UHFFFAOYSA-N [SnH3][Al] Chemical compound [SnH3][Al] YVIMHTIMVIIXBQ-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Inorganic materials O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H01L33/40—Materials therefor
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- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
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- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Abstract
一种发光二极管芯片(72)、显示面板(7)和电子设备(8)，该发光二极管芯片(72)包括：第一半导体层(21)、第二半导体层(22)、第一电极(3)和第二电极(4)，第一电极(3)与第一半导体层(21)电连接，第二电极(4)与第二半导体层(22)电连接，第一电极(3)为包围第二电极(4)设置的环形结构，第一电极(3)和第二电极(4)之间形成环形的第一沟道(5)，第一电极(3)上设置有至少一个第二沟道(6)，至少一个第二沟道(6)贯穿第一电极(3)内侧和外侧并与第一沟道(5)连通，第一沟道(5)与第二沟道(6)连通有利于发光二极管芯片(72)焊接时产生的助焊剂清理，进一步减少短路的情况。
Description
PCT国内申请，说明书已公开。
Claims (1)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2019/130525 WO2021134488A1 (zh) | 2019-12-31 | 2019-12-31 | 发光二极管芯片、显示面板以及电子设备 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113544865A true CN113544865A (zh) | 2021-10-22 |
| CN113544865B CN113544865B (zh) | 2024-03-08 |
Family
ID=76159008
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201980004150.0A Active CN113544865B (zh) | 2019-12-31 | 2019-12-31 | 发光二极管芯片、显示面板以及电子设备 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20210242384A1 (zh) |
| KR (1) | KR102590952B1 (zh) |
| CN (1) | CN113544865B (zh) |
| WO (1) | WO2021134488A1 (zh) |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004079972A (ja) * | 2002-08-22 | 2004-03-11 | Fuji Photo Film Co Ltd | 面発光型発光素子 |
| KR20050067803A (ko) * | 2003-12-29 | 2005-07-05 | 엘지.필립스 엘시디 주식회사 | 액티브 매트릭스형 유기전계발광 소자용 구동용박막트랜지스터 및 상기 구동용 박막트랜지스터를포함하는 액티브 매트릭스형 유기전계발광 소자 |
| US20050253156A1 (en) * | 2004-05-11 | 2005-11-17 | Naochika Horio | Semiconductor light-emitting device and fabrication method of the same |
| US20060244005A1 (en) * | 2005-04-28 | 2006-11-02 | Epitec Technology Corporation | Lateral current blocking light-emitting diode and method for manufacturing the same |
| KR20080005726A (ko) * | 2006-07-10 | 2008-01-15 | 삼성전기주식회사 | 플립칩용 질화물계 발광소자 |
| CN104600166A (zh) * | 2013-10-31 | 2015-05-06 | 无锡华润华晶微电子有限公司 | 一种发光二极管芯片结构及其制备方法 |
| CN104600175A (zh) * | 2014-12-18 | 2015-05-06 | 上海大学 | 倒装led基板构件及倒装led封装构件 |
| KR20150071630A (ko) * | 2013-12-17 | 2015-06-26 | 삼성전자주식회사 | 반도체 발광소자 및 이를 구비한 반도체 발광장치 |
| US20160099383A1 (en) * | 2014-10-07 | 2016-04-07 | Lg Electronics Inc. | Semiconductor device and method of manufacturing the same |
| CN110034218A (zh) * | 2019-04-19 | 2019-07-19 | 云谷（固安）科技有限公司 | 一种微型led芯片和显示面板 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6492784B1 (en) * | 1999-03-05 | 2002-12-10 | Gravitec, Inc. | Propulsion device and method employing electric fields for producing thrust |
| JP5070693B2 (ja) * | 2005-11-11 | 2012-11-14 | サンケン電気株式会社 | 半導体装置 |
| TW201511362A (zh) * | 2013-09-09 | 2015-03-16 | Lextar Electronics Corp | 發光二極體晶片 |
| CN107131430A (zh) * | 2017-04-21 | 2017-09-05 | 蒋雪娇 | 发光二极管的芯片结构以及光利用率高的灯具 |
| CN207925512U (zh) * | 2018-01-05 | 2018-09-28 | 佛山市国星半导体技术有限公司 | 一种高可靠性led芯片 |
| CN109980059A (zh) * | 2019-04-17 | 2019-07-05 | 厦门乾照半导体科技有限公司 | 一种电极具有开口的led芯片结构 |
-
2019
- 2019-12-31 CN CN201980004150.0A patent/CN113544865B/zh active Active
- 2019-12-31 WO PCT/CN2019/130525 patent/WO2021134488A1/zh active Application Filing
- 2019-12-31 KR KR1020217011881A patent/KR102590952B1/ko active IP Right Grant
-
2021
- 2021-04-20 US US17/235,661 patent/US20210242384A1/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004079972A (ja) * | 2002-08-22 | 2004-03-11 | Fuji Photo Film Co Ltd | 面発光型発光素子 |
| KR20050067803A (ko) * | 2003-12-29 | 2005-07-05 | 엘지.필립스 엘시디 주식회사 | 액티브 매트릭스형 유기전계발광 소자용 구동용박막트랜지스터 및 상기 구동용 박막트랜지스터를포함하는 액티브 매트릭스형 유기전계발광 소자 |
| US20050253156A1 (en) * | 2004-05-11 | 2005-11-17 | Naochika Horio | Semiconductor light-emitting device and fabrication method of the same |
| US20060244005A1 (en) * | 2005-04-28 | 2006-11-02 | Epitec Technology Corporation | Lateral current blocking light-emitting diode and method for manufacturing the same |
| KR20080005726A (ko) * | 2006-07-10 | 2008-01-15 | 삼성전기주식회사 | 플립칩용 질화물계 발광소자 |
| CN104600166A (zh) * | 2013-10-31 | 2015-05-06 | 无锡华润华晶微电子有限公司 | 一种发光二极管芯片结构及其制备方法 |
| KR20150071630A (ko) * | 2013-12-17 | 2015-06-26 | 삼성전자주식회사 | 반도체 발광소자 및 이를 구비한 반도체 발광장치 |
| US20160099383A1 (en) * | 2014-10-07 | 2016-04-07 | Lg Electronics Inc. | Semiconductor device and method of manufacturing the same |
| CN104600175A (zh) * | 2014-12-18 | 2015-05-06 | 上海大学 | 倒装led基板构件及倒装led封装构件 |
| CN110034218A (zh) * | 2019-04-19 | 2019-07-19 | 云谷（固安）科技有限公司 | 一种微型led芯片和显示面板 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113544865B (zh) | 2024-03-08 |
| KR102590952B1 (ko) | 2023-10-17 |
| KR20210055773A (ko) | 2021-05-17 |
| WO2021134488A1 (zh) | 2021-07-08 |
| US20210242384A1 (en) | 2021-08-05 |
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