CN113495083B - 用于等离子体辅助低真空带电粒子显微术的方法和系统 - Google Patents

用于等离子体辅助低真空带电粒子显微术的方法和系统

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Publication number
CN113495083B
CN113495083B CN202110285849.8A CN202110285849A CN113495083B CN 113495083 B CN113495083 B CN 113495083B CN 202110285849 A CN202110285849 A CN 202110285849A CN 113495083 B CN113495083 B CN 113495083B
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CN
China
Prior art keywords
sample
detection space
plasma
gas
detector
Prior art date
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Application number
CN202110285849.8A
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English (en)
Chinese (zh)
Other versions
CN113495083A (zh
Inventor
J·比肖普
D·托通简
C·埃尔巴达维
C·罗波
M·托思
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FEI Co
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FEI Co
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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/07—Investigating materials by wave or particle radiation secondary emission
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/10—Different kinds of radiation or particles
    • G01N2223/102—Different kinds of radiation or particles beta or electrons
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2002—Controlling environment of sample
    • H01J2237/2003—Environmental cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/2448—Secondary particle detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/2449—Detector devices with moving charges in electric or magnetic fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/2602—Details
    • H01J2237/2605—Details operating at elevated pressures, e.g. atmosphere

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Electron Sources, Ion Sources (AREA)
CN202110285849.8A 2020-03-18 2021-03-17 用于等离子体辅助低真空带电粒子显微术的方法和系统 Active CN113495083B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16/823,140 US11152189B2 (en) 2020-03-18 2020-03-18 Method and system for plasma assisted low vacuum charged-particle microscopy
US16/823140 2020-03-18

Publications (2)

Publication Number Publication Date
CN113495083A CN113495083A (zh) 2021-10-12
CN113495083B true CN113495083B (zh) 2025-07-18

Family

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Family Applications (1)

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CN202110285849.8A Active CN113495083B (zh) 2020-03-18 2021-03-17 用于等离子体辅助低真空带电粒子显微术的方法和系统

Country Status (4)

Country Link
US (1) US11152189B2 (enExample)
EP (1) EP3882950A1 (enExample)
JP (1) JP7534050B2 (enExample)
CN (1) CN113495083B (enExample)

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JP7383536B2 (ja) * 2020-03-18 2023-11-20 株式会社日立ハイテクサイエンス 粒子ビーム装置及び複合ビーム装置
US20250210303A1 (en) * 2023-12-21 2025-06-26 Fei Company Mixed-gas species plasma source system

Citations (1)

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DE102015204091A1 (de) * 2015-03-06 2016-09-08 Carl Zeiss Microscopy Gmbh Verfahren und Vorrichtungen zur Ladungskompensation

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US4983253A (en) * 1988-05-27 1991-01-08 University Of Houston-University Park Magnetically enhanced RIE process and apparatus
US5466929A (en) * 1992-02-21 1995-11-14 Hitachi, Ltd. Apparatus and method for suppressing electrification of sample in charged beam irradiation apparatus
JPH11154479A (ja) * 1997-11-20 1999-06-08 Hitachi Ltd ２次電子画像検出方法及びその装置並びに集束荷電粒子ビームによる処理方法及びその装置
US6105589A (en) * 1999-01-11 2000-08-22 Vane; Ronald A. Oxidative cleaning method and apparatus for electron microscopes using an air plasma as an oxygen radical source
EP2365512A3 (en) * 2000-06-27 2012-01-04 Ebara Corporation Inspection system by charged particle beam
EP2372743B1 (en) 2002-09-18 2016-03-23 FEI Company Charged particle beam system with an ion generator
CN101630623B (zh) * 2003-05-09 2012-02-22 株式会社荏原制作所 基于带电粒子束的检查装置及采用了该检查装置的器件制造方法
WO2007117397A2 (en) * 2006-03-31 2007-10-18 Fei Company Improved detector for charged particle beam instrument
JP2007280737A (ja) * 2006-04-05 2007-10-25 Horon:Kk 荷電粒子線検出装置
JP5179253B2 (ja) * 2008-05-16 2013-04-10 株式会社日立ハイテクノロジーズ 電極ユニット、及び荷電粒子線装置
WO2011127327A2 (en) * 2010-04-07 2011-10-13 Fei Company Combination laser and charged particle beam system
JP5890652B2 (ja) * 2011-10-28 2016-03-22 株式会社荏原製作所 試料観察装置及び試料観察方法
EP2708874A1 (en) * 2012-09-12 2014-03-19 Fei Company Method of performing tomographic imaging of a sample in a charged-particle microscope
JP5875500B2 (ja) * 2012-10-31 2016-03-02 株式会社日立ハイテクノロジーズ 電子ビーム顕微装置
CN105143866A (zh) 2013-02-20 2015-12-09 B-纳米股份有限公司 扫描电子显微镜
TWI685012B (zh) * 2014-12-22 2020-02-11 美商卡爾蔡司顯微鏡有限責任公司 帶電粒子束系統、用以處理樣品的方法、用以製造約瑟夫接面的方法與用以產生複數個約瑟夫接面的方法
US20180095067A1 (en) * 2015-04-03 2018-04-05 Abbott Laboratories Devices and methods for sample analysis
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US9666405B1 (en) * 2016-02-18 2017-05-30 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH System for imaging a signal charged particle beam, method for imaging a signal charged particle beam, and charged particle beam device
CN106783493B (zh) 2016-12-01 2018-07-10 聚束科技（北京）有限公司 一种真空气氛处理装置、样品观测系统及方法
JP2019032940A (ja) * 2017-08-04 2019-02-28 住友重機械イオンテクノロジー株式会社 イオン注入装置
CN110006934A (zh) * 2017-12-28 2019-07-12 Fei 公司 通过等离子体聚焦离子束处理生物低温样品的方法、装置和系统

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015204091A1 (de) * 2015-03-06 2016-09-08 Carl Zeiss Microscopy Gmbh Verfahren und Vorrichtungen zur Ladungskompensation

Also Published As

Publication number Publication date
JP7534050B2 (ja) 2024-08-14
US20210296086A1 (en) 2021-09-23
JP2021150288A (ja) 2021-09-27
EP3882950A1 (en) 2021-09-22
US11152189B2 (en) 2021-10-19
CN113495083A (zh) 2021-10-12

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