JP7534050B2 - プラズマ支援低真空荷電粒子顕微鏡法のための方法およびシステム - Google Patents

プラズマ支援低真空荷電粒子顕微鏡法のための方法およびシステム Download PDF

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Publication number
JP7534050B2
JP7534050B2 JP2021043245A JP2021043245A JP7534050B2 JP 7534050 B2 JP7534050 B2 JP 7534050B2 JP 2021043245 A JP2021043245 A JP 2021043245A JP 2021043245 A JP2021043245 A JP 2021043245A JP 7534050 B2 JP7534050 B2 JP 7534050B2
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Japan
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sample
plasma
gas
detection volume
detector
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JP2021150288A5 (enExample
JP2021150288A (ja
Inventor
ビショップ ジェイムズ
トトンジアン ダニエル
エルバダウィ クリス
ロボ チャーリーン
トス ミロス
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FEI Co
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FEI Co
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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/07—Investigating materials by wave or particle radiation secondary emission
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/10—Different kinds of radiation or particles
    • G01N2223/102—Different kinds of radiation or particles beta or electrons
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2002—Controlling environment of sample
    • H01J2237/2003—Environmental cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/2448—Secondary particle detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/2449—Detector devices with moving charges in electric or magnetic fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/2602—Details
    • H01J2237/2605—Details operating at elevated pressures, e.g. atmosphere

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Electron Sources, Ion Sources (AREA)
JP2021043245A 2020-03-18 2021-03-17 プラズマ支援低真空荷電粒子顕微鏡法のための方法およびシステム Active JP7534050B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16/823,140 2020-03-18
US16/823,140 US11152189B2 (en) 2020-03-18 2020-03-18 Method and system for plasma assisted low vacuum charged-particle microscopy

Publications (3)

Publication Number Publication Date
JP2021150288A JP2021150288A (ja) 2021-09-27
JP2021150288A5 JP2021150288A5 (enExample) 2024-02-22
JP7534050B2 true JP7534050B2 (ja) 2024-08-14

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JP2021043245A Active JP7534050B2 (ja) 2020-03-18 2021-03-17 プラズマ支援低真空荷電粒子顕微鏡法のための方法およびシステム

Country Status (4)

Country Link
US (1) US11152189B2 (enExample)
EP (1) EP3882950A1 (enExample)
JP (1) JP7534050B2 (enExample)
CN (1) CN113495083B (enExample)

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* Cited by examiner, † Cited by third party
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JP7383536B2 (ja) * 2020-03-18 2023-11-20 株式会社日立ハイテクサイエンス 粒子ビーム装置及び複合ビーム装置
US20250210303A1 (en) * 2023-12-21 2025-06-26 Fei Company Mixed-gas species plasma source system

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007280737A (ja) 2006-04-05 2007-10-25 Horon:Kk 荷電粒子線検出装置
JP2014089936A (ja) 2012-10-31 2014-05-15 Hitachi High-Technologies Corp 電子ビーム顕微装置
US20150380207A1 (en) 2013-02-20 2015-12-31 B-Nano Ltd. Scanning electron microscope
JP2019032940A (ja) 2017-08-04 2019-02-28 住友重機械イオンテクノロジー株式会社 イオン注入装置

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US4983253A (en) * 1988-05-27 1991-01-08 University Of Houston-University Park Magnetically enhanced RIE process and apparatus
US5466929A (en) * 1992-02-21 1995-11-14 Hitachi, Ltd. Apparatus and method for suppressing electrification of sample in charged beam irradiation apparatus
JPH11154479A (ja) * 1997-11-20 1999-06-08 Hitachi Ltd ２次電子画像検出方法及びその装置並びに集束荷電粒子ビームによる処理方法及びその装置
US6105589A (en) * 1999-01-11 2000-08-22 Vane; Ronald A. Oxidative cleaning method and apparatus for electron microscopes using an air plasma as an oxygen radical source
TWI294632B (en) * 2000-06-27 2008-03-11 Ebara Corp Inspecting device using an electron ebam and method for making semiconductor devices with such inspection device
KR101015116B1 (ko) 2002-09-18 2011-02-16 에프이아이 컴파니 하전(荷電) 입자 빔 시스템
CN101630623B (zh) * 2003-05-09 2012-02-22 株式会社荏原制作所 基于带电粒子束的检查装置及采用了该检查装置的器件制造方法
WO2007117397A2 (en) * 2006-03-31 2007-10-18 Fei Company Improved detector for charged particle beam instrument
JP5179253B2 (ja) * 2008-05-16 2013-04-10 株式会社日立ハイテクノロジーズ 電極ユニット、及び荷電粒子線装置
CN105390358B (zh) * 2010-04-07 2018-09-04 Fei 公司 组合激光器和带电粒子束系统
JP5890652B2 (ja) * 2011-10-28 2016-03-22 株式会社荏原製作所 試料観察装置及び試料観察方法
EP2708874A1 (en) * 2012-09-12 2014-03-19 Fei Company Method of performing tomographic imaging of a sample in a charged-particle microscope
JP6689602B2 (ja) * 2014-12-22 2020-04-28 カール ツァイス マイクロスコーピー エルエルシー 荷電粒子ビームシステム及び方法
DE102015204091B4 (de) * 2015-03-06 2023-06-07 Carl Zeiss Microscopy Gmbh Verfahren und Vorrichtungen zur Ladungskompensation
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CN110006934A (zh) * 2017-12-28 2019-07-12 Fei 公司 通过等离子体聚焦离子束处理生物低温样品的方法、装置和系统

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007280737A (ja) 2006-04-05 2007-10-25 Horon:Kk 荷電粒子線検出装置
JP2014089936A (ja) 2012-10-31 2014-05-15 Hitachi High-Technologies Corp 電子ビーム顕微装置
US20150380207A1 (en) 2013-02-20 2015-12-31 B-Nano Ltd. Scanning electron microscope
JP2019032940A (ja) 2017-08-04 2019-02-28 住友重機械イオンテクノロジー株式会社 イオン注入装置

Also Published As

Publication number Publication date
US20210296086A1 (en) 2021-09-23
CN113495083A (zh) 2021-10-12
CN113495083B (zh) 2025-07-18
EP3882950A1 (en) 2021-09-22
US11152189B2 (en) 2021-10-19
JP2021150288A (ja) 2021-09-27

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