CN113488544B - TVS overvoltage protection device - Google Patents
TVS overvoltage protection device Download PDFInfo
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- CN113488544B CN113488544B CN202110601328.9A CN202110601328A CN113488544B CN 113488544 B CN113488544 B CN 113488544B CN 202110601328 A CN202110601328 A CN 202110601328A CN 113488544 B CN113488544 B CN 113488544B
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- heat conducting
- shell
- plastic shell
- tvs
- copper
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 68
- 229910052802 copper Inorganic materials 0.000 claims abstract description 68
- 239000010949 copper Substances 0.000 claims abstract description 68
- 239000002245 particle Substances 0.000 claims abstract description 50
- 239000004033 plastic Substances 0.000 claims abstract description 36
- 238000009434 installation Methods 0.000 claims description 11
- 238000003466 welding Methods 0.000 claims description 4
- 238000007789 sealing Methods 0.000 claims description 3
- 239000004593 Epoxy Substances 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000000565 sealant Substances 0.000 abstract description 9
- 230000002035 prolonged effect Effects 0.000 abstract description 3
- 230000001052 transient effect Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- FGRBYDKOBBBPOI-UHFFFAOYSA-N 10,10-dioxo-2-[4-(N-phenylanilino)phenyl]thioxanthen-9-one Chemical compound O=C1c2ccccc2S(=O)(=O)c2ccc(cc12)-c1ccc(cc1)N(c1ccccc1)c1ccccc1 FGRBYDKOBBBPOI-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005429 filling process Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000004382 potting Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
The invention discloses a TVS overvoltage protection device, which comprises a rectangular plastic shell, wherein a mounting cavity is formed in the rectangular plastic shell, a chip group is arranged in the mounting cavity, an upper copper particle and a lower copper particle are respectively welded at the upper end and the lower end of the chip group, a connecting frame is welded on the upper surface of the upper copper particle, a heat conducting shell arranged around a combination of the chip group, the upper copper particle and the lower copper particle is arranged in the mounting cavity, a plurality of through holes are formed in the side wall of the rectangular plastic shell, heat conducting columns are arranged in the through holes in a matching manner, the heat conducting columns are connected with the heat conducting shell, pouring sealant is arranged in the rectangular plastic shell, the chip group, the upper copper particle, the lower copper particle, the connecting frame, the heat conducting shell and the heat conducting columns are fixed in the rectangular plastic shell, the heat conducting shell is fixedly arranged with the heat conducting shell and the heat conducting columns in the plastic shell, the heat conducting shell collects heat emitted by a TVS chip, the heat is led out of the plastic shell to the air through the plurality of heat conducting columns, the heat emission generated when the TVS chip works is accelerated, the temperature of the working environment of the TVS chip is reduced, and the service life is prolonged.
Description
Technical Field
The invention relates to the technical field of diodes, in particular to a TVS overvoltage protection device.
Background
The TVS overvoltage protection device is also called a transient suppression diode (Trans ient Vo ltage Suppressor, TVS) and is used as an effective protection device, so that transient interference is effectively suppressed. TVS is a diode made of silicon semiconductor material with special function, which can be opened rapidly when the two ends of TVS tube are subjected to instant high energy impact, and at the same time absorb surge current to clamp the voltage between the two ends to a preset value, so as to ensure that the precise electronic components at the back are prevented from being damaged by the impact of transient high energy.
A high-power glue-pouring process patch TVS diode in the prior art comprises a plastic shell, copper pins, a unidirectional TVS chip, copper particles and pouring sealant; the plastic shell is internally provided with a containing cavity; one end of the copper pin is arranged on the bottom wall of the accommodating cavity of the plastic shell, and the other end extends out of the plastic shell and is used for communicating a circuit; a unidirectional TVS chip is welded between the two copper particles, and is arranged in the accommodating cavity of the plastic shell, and one end of one copper particle, which is far away from the unidirectional TVS chip, is welded on the copper pin for communicating a circuit; the potting adhesive encapsulates the unidirectional TVS chip, the copper particles and the copper pins in the plastic shell, and the low-cost glue filling process is adopted, so that mechanical stress does not exist in the whole process, the unidirectional TVS chip is not easy to damage, and the unidirectional TVS chip is accurately positioned and stable and controllable in performance by combining with the welding process of the mature shaft type diode.
However, after the technology is sealed by the pouring sealant, the heat dissipation speed generated by the TVS chip in operation is reduced, the temperature of the working environment of the TVS chip is greatly improved, and the service life of the TVS chip is reduced after long-term use.
Disclosure of Invention
In order to solve the defects in the prior art, the invention provides the TVS overvoltage protection device, and the heat in the device is conducted into the air to be emitted through the heat conducting shell and the heat conducting column, so that the temperature of the working environment of the TVS chip is reduced, and the working life of the TVS chip is prolonged.
In order to achieve the technical effects, the invention adopts the following scheme:
the utility model provides a TVS overvoltage protection device, includes rectangular plastic shell, rectangular plastic shell's bottom has the opening, the opening extends the top that forms the installation cavity towards rectangular plastic shell, be equipped with the chipset in the installation cavity, the chipset includes a plurality of range upon range of TVS chips that set up, the upper end and the lower extreme of chipset have copper particle and lower copper particle respectively welded, go up copper particle and lower copper particle with the chipset centre gripping, go up copper particle's upper surface welding and have the link, the link includes first connecting piece, the one end of first connecting piece is connected and is pasted with the top setting of installation cavity with last copper particle, the other end of first connecting piece is buckled towards the opening direction and is extended and form the second connection piece, the second connection piece is pasted with the lateral wall of installation cavity and is set up, the terminal of second connection piece is buckled towards rectangular plastic shell's outside and is extended and is formed the pin, be equipped with the copper particle under with in the installation cavity, go up copper particle and lower copper particle's combination setting, go up copper particle and lower copper particle with the chip group centre gripping in the middle, go up copper particle's upper end and upper end copper particle are connected with the copper particle and are connected with the top of installing cavity and are equipped with the rectangle, the heat conduction post has the heat conduction post that the bottom is connected with the top of installing cavity, the bottom is equipped with the heat conduction post, the bottom is connected with the rectangle shell, the bottom is connected with the bottom of the rectangle shell, the heat conduction post, and has the bottom is connected with the bottom of the rectangle post.
According to the preferred technical scheme, the bottom of the rectangular plastic shell is provided with a bayonet matched with the pin, and the pin is clamped into the bayonet for limiting.
According to the preferred technical scheme, the outer side face of the heat conducting shell is provided with a plurality of limit grooves corresponding to the heat conducting columns one by one, and one end of each heat conducting column is inserted into each limit groove.
According to the preferred technical scheme, an epoxy resin layer is arranged between the upper copper particles and the lower copper particles around the chip set and used for sealing the chip set.
According to the preferable technical scheme, the first copper particles and the second copper particles are cylinders with the same size.
Compared with the prior art, the beneficial effects are as follows:
the invention has simple structure and convenient use, the heat conducting shell and the heat conducting columns are fixedly arranged in the plastic shell through the pouring sealant, the heat conducting shell collects the heat emitted by the TVS chip, and the heat is led out of the plastic shell through the plurality of heat conducting columns to be emitted into the air, so that the heat emission generated when the TVS chip works is accelerated, the temperature of the working environment of the TVS chip is reduced, and the service life is prolonged.
Drawings
FIG. 1 is a schematic cross-sectional view of the present invention;
fig. 2 is a schematic top view of the present invention.
Reference numerals: 1. rectangular plastic shell; 2. a mounting cavity; 3. TVS chip; 4. copper particles are coated; 5. copper particles are arranged; 6. a first connecting piece; 7. a second connecting piece; 8. a heat conductive shell; 9. a heat conducting column; 10. pouring sealant; 11. pins.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments.
As shown in fig. 1 and 2, a TVS overvoltage protection device comprises a rectangular plastic case 1, wherein an opening is formed at the bottom of the rectangular plastic case 1, the opening extends towards the inside of the rectangular plastic case 1 to form a mounting cavity 2, a chip set is arranged in the mounting cavity 2 and comprises a plurality of TVS chips 3 which are stacked, an upper copper particle 4 and a lower copper particle 5 are welded at the upper end and the lower end of the chip set respectively, the upper copper particle 4 and the lower copper particle 5 clamp the chip set in the middle, a connecting frame is welded on the upper surface of the upper copper particle 4, the connecting frame comprises a first connecting sheet 6, one end of the first connecting sheet 6 is connected with the upper copper particle 4 and is attached to the top of the mounting cavity 2, the other end of the first connecting sheet 6 bends towards the opening direction to extend to form a second connecting sheet 7, the second connecting sheet 7 is attached to the side wall of the mounting cavity 2, the tail end of the second connecting sheet 7 is bent towards the outer side of the rectangular plastic shell 1 to extend to form pins 11, a heat conducting shell 8 is arranged in the mounting cavity 2, the heat conducting shell 8 is arranged around the combination of the chip set, the upper copper particle 4 and the lower copper particle 5, the upper end of the heat conducting shell 8 is abutted against the top of the mounting cavity 2, the upper end of the heat conducting shell 8 is provided with a notch for the first connecting sheet 6 to pass through, the side wall of the rectangular plastic shell 1 is provided with a plurality of through holes, the through holes are internally provided with heat conducting columns 9 in a matching manner, the heat conducting columns 9 are connected with the heat conducting shell 8, the outer end face of each heat conducting column 9 is flush with the outer side face of the rectangular plastic shell 1, a pouring sealant 10 is arranged in the rectangular plastic shell 1, the pouring sealant 10 fixes the chip set, the upper copper particle 4, the lower copper particle 5, the connecting frame, the heat conducting shell 8 and the heat conducting columns 9 in the rectangular plastic shell 1, the lower surface of the lower copper particle 5 extends out of the lower surface of the pouring sealant 10 and is flush with the bottom of the rectangular plastic shell 1, and the lower end of the heat conducting shell 8 is positioned in the pouring sealant 10.
According to the preferred technical scheme, the bottom of the rectangular plastic shell 1 is provided with a bayonet matched with the pin 11, and the pin 11 is clamped into the bayonet for limiting.
According to the preferred technical scheme, the outer side face of the heat conducting shell 8 is provided with a plurality of limit grooves corresponding to the heat conducting columns 9 one by one, and one end of each heat conducting column 9 is inserted into each limit groove.
According to the preferred technical scheme, an epoxy resin layer is arranged between the upper copper particles 4 and the lower copper particles 5 around the chip set and used for sealing the chip set.
According to the preferable technical scheme, the first copper particles and the second copper particles are cylinders with the same size.
In the description of the present invention, it should be understood that the directions or positional relationships indicated by the terms "upper", "lower", "top", "bottom", "inner", "outer", etc. are based on the directions or positional relationships shown in the drawings, or the directions or positional relationships conventionally put in place when the inventive product is used, or the directions or positional relationships conventionally understood by those skilled in the art are merely for convenience of describing the present invention and simplifying the description, and do not indicate or imply that the apparatus or elements referred to must have a specific direction, be configured and operated in a specific direction, and therefore should not be construed as limiting the present invention.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present invention, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.
All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Claims (5)
1. The utility model provides a TVS overvoltage protection device, its characterized in that, including rectangular plastic shell, rectangular plastic shell's bottom has the opening, the opening is towards rectangular plastic shell's internal extension formation installation cavity, be equipped with the chipset in the installation cavity, the chipset includes a plurality of range upon range of TVS chips that set up, the upper end and the lower extreme of chipset have copper grain and lower copper grain respectively welded, go up copper grain and lower copper grain with the chipset centre gripping, go up copper grain's upper surface welding and have the link, the link includes first connecting piece, first connecting piece's one end is connected and pastes with last copper grain and set up with the top of installation cavity, the other end of first connecting piece is buckled towards the opening direction and is extended and form the second connection piece, the second connection piece is pasted with the lateral wall of installation cavity and is set up, the terminal is buckled towards the outside of rectangular plastic shell and is extended and form the pin, be equipped with the shell in the installation cavity, go up copper grain around the chipset and set up copper grain and lower copper grain with the lower copper grain and with the centre gripping, go up copper grain's upper surface welding has the link, the one end of first connecting piece is connected with the copper grain with the top of upper copper grain and is connected with the top of installation cavity, the rectangle plastic shell, the bottom of extension of second connection piece has a plurality of copper grain and the bottom of the terminal, the terminal surface of extension of the terminal connection of the rectangle is equipped with the terminal connection, the terminal connection of the terminal connection.
2. The TVS overvoltage protection device of claim 1, wherein a bottom of said rectangular molded case has a bayonet matching with a pin that snaps into the bayonet for limiting.
3. The TVS overvoltage protection device of claim 1, wherein the outer side of said thermally conductive shell has a plurality of limit grooves in one-to-one correspondence with the thermally conductive posts, and wherein one end of said thermally conductive post is inserted into said limit groove.
4. The TVS overvoltage protection device of claim 1, wherein an epoxy layer is disposed around the chipset between the upper copper particle and the lower copper particle for sealing the chipset.
5. The TVS overvoltage protection device of claim 1, wherein the first copper particles and the second copper particles are cylinders of uniform size.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110601328.9A CN113488544B (en) | 2021-05-31 | 2021-05-31 | TVS overvoltage protection device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110601328.9A CN113488544B (en) | 2021-05-31 | 2021-05-31 | TVS overvoltage protection device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113488544A CN113488544A (en) | 2021-10-08 |
| CN113488544B true CN113488544B (en) | 2023-07-14 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110601328.9A Active CN113488544B (en) | 2021-05-31 | 2021-05-31 | TVS overvoltage protection device |
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| CN (1) | CN113488544B (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN210245483U (en) * | 2019-09-27 | 2020-04-03 | 派克微电子(深圳)有限公司 | High-power encapsulating technology paster TVS diode |
| CN212434633U (en) * | 2020-07-31 | 2021-01-29 | 捷捷半导体有限公司 | Overvoltage protection device and overvoltage protection circuit |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10103540B2 (en) * | 2014-04-24 | 2018-10-16 | General Electric Company | Method and system for transient voltage suppression devices with active control |
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2021
- 2021-05-31 CN CN202110601328.9A patent/CN113488544B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN210245483U (en) * | 2019-09-27 | 2020-04-03 | 派克微电子(深圳)有限公司 | High-power encapsulating technology paster TVS diode |
| CN212434633U (en) * | 2020-07-31 | 2021-01-29 | 捷捷半导体有限公司 | Overvoltage protection device and overvoltage protection circuit |
Non-Patent Citations (1)
| Title |
|---|
| LTCC中埋置大功率芯片散热的三维有限元分析;陈品;吴兆华;黄红艳;张生;赵强;;电子与封装(03);全文 * |
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| CN113488544A (en) | 2021-10-08 |
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