CN108389853A - A kind of full-wave rectification bridge structure of integrated form antisurge - Google Patents
A kind of full-wave rectification bridge structure of integrated form antisurge Download PDFInfo
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- CN108389853A CN108389853A CN201810271390.4A CN201810271390A CN108389853A CN 108389853 A CN108389853 A CN 108389853A CN 201810271390 A CN201810271390 A CN 201810271390A CN 108389853 A CN108389853 A CN 108389853A
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- lead frame
- diode chip
- backlight unit
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- antisurge
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- 239000000463 material Substances 0.000 claims description 8
- 239000003822 epoxy resin Substances 0.000 claims description 4
- 229920000647 polyepoxide Polymers 0.000 claims description 4
- 229910000679 solder Inorganic materials 0.000 claims description 3
- 230000009467 reduction Effects 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 5
- 238000004891 communication Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 208000025274 Lightning injury Diseases 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- GVVPGTZRZFNKDS-JXMROGBWSA-N geranyl diphosphate Chemical compound CC(C)=CCC\C(C)=C\CO[P@](O)(=O)OP(O)(O)=O GVVPGTZRZFNKDS-JXMROGBWSA-N 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49575—Assemblies of semiconductor devices on lead frames
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Rectifiers (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
The invention discloses a kind of full-wave rectification bridge structures of integrated form antisurge, including plastic-sealed body, the identical diode chip for backlight unit of four technical indicators, unidirectional TVS chips, the first~the 4th lead frame；Unidirectional TVS chips top surface is p-type, is fixed on the second lead frame, and connects the 4th lead frame by conducting wire；Two diode chip for backlight unit top surfaces are p-type, are fixed on the second lead frame, pass through conducting wire connection first, third lead frame respectively；Other two diode chip for backlight unit top surface is N-type, is fixed on the 4th lead frame, passes through conducting wire connection first, third lead frame respectively；The first, third lead frame is as input pin, and the second, the 4th lead frame is respectively as output positive and negative electrode pin.It is compact in design, cost reduction, thinner after unidirectional TVS chips are set to conventional rectifier bridge by the present invention.The present invention is suitable for technical field of electronic devices.
Description
Technical field
The invention belongs to technical field of electronic devices, the circuit element for protecting rectification bridge output end, specifically
A kind of full-wave rectification bridge structure of integrated form antisurge.
Background technology
The electrical surge that AC network interference, lightning stroke and the factors such as power equipment start and stop generate, be cause electronic equipment and
The major reason of circuit damage.The AC conversion that rectifier bridge is used to input is then direct current exports, when the exchange of input
Electricity lacks protection element there are surge and surge more than load circuit maximum pressure resistance in circuit when, the energy meeting of moment generation
Burn the device of load circuit, such as Fig. 1（a）It show power grid normal communication input waveform, Fig. 1（b）It show that there are when surge
Power grid exchange input waveform.
Transient voltage suppressor diode TVS is a kind of high-effect protection device of diode, it can be generated in circuit
Surge current is absorbed when surge rapidly and by voltage clamp in the pressure-resistant range by protection voltage, there is the response speed being exceedingly fast
Degree and extremely strong surge absoption ability.
The Chinese utility model patent of Patent No. 201621041504.9 discloses a kind of two-way TVS input filters of band
Full-wave rectification bridge, be illustrated in figure 2 its circuit topology figure, which is arranged two-way TVS bis- by the input terminal in rectifier bridge
Pole pipe absorbs the surge current of input terminal and clamps down on input voltage in the pressure-resistant range by protection voltage, however the device
It is complicated, layout is not compact enough, thickness is high, volume is big, of high cost, be unfavorable for circuit miniaturization development.
Invention content
The object of the present invention is to provide a kind of full-wave rectification bridge structures of integrated form antisurge, in the output of conventional rectifier bridge
Unidirectional TVS diode is arranged in end, can not only protect load circuit component, but also do not increase the thickness of conventional rectifier bridge, moreover it is possible to compared with
The full-wave rectification bridge with two-way TVS input filters reduces volume, reduces cost in the prior art.
To achieve the above object, used technical solution is as follows by the present invention：
A kind of full-wave rectification bridge of the two-way TVS input filters of band, including plastic-sealed body, the first~the 4th diode chip for backlight unit, a list
To TVS chips, the first~the 4th lead frame；
Described first~the 4th diode chip for backlight unit technical indicator is identical；
The unidirectional TVS chips top surface is p-type, is fixed on the second lead frame, and connects the 4th lead frame by conducting wire
Frame；
First diode chip for backlight unit and the second diode chip for backlight unit top surface are p-type, are fixed on the second lead frame, respectively
The first lead frame, third lead frame are connected by conducting wire；
The third diode chip for backlight unit and the 4th diode chip for backlight unit top surface are N-type, are fixed on the 4th lead frame, respectively
The first lead frame, third lead frame are connected by conducting wire；
Exchange pin of first lead frame with third lead frame as input terminal, the second lead frame and the 4th lead
Positive and negative electrode pin of the frame respectively as output end.
As restriction：Described first~the 4th lead frame is in same plane.
It is limited as second：The unidirectional TVS chips and the first~the 4th diode chip for backlight unit are set by its bottom surface respectively
The bonding material set is fixed on the lead frame at respective place, and the bonding material is conducting resinl or slicken solder.
As the third restriction：The carrier of first lead frame and third lead frame is all packaged in plastic-sealed body
Interior, the first half of the second lead frame and the 4th lead frame carrier is packaged in plastic-sealed body and carrier lower part exposes to modeling
Feng Ti.
It is limited as the 4th kind：First~the 4th lead frame carrier is all packaged in the cavity of plastic-sealed body.
It is limited as the 5th kind：The plastic-sealed body is the shell with cavity that epoxy resin is constituted.
Due to the adoption of the above technical solution, compared with prior art, acquired technological progress is the present invention：
（1）Unidirectional TVS diode is encapsulated among rectifier bridge and is set to output end by the present invention, is not increasing rectifier bridge volume
In the case of, it is greatly saved the PCB space of power unit, while ensuring that the subsequent circuit element of rectifier bridge is rushed from surge
It hits；
（2）All diode chip for backlight unit of the present invention are respectively positioned on same plane, and all lead frames are respectively positioned on same plane,
Compared with the full-wave rectification bridge in the prior art with two-way TVS input filters, the package thickness smaller of whole rectifier bridge structure is enabled,
Also smaller, layout are compacter for volume；
（3）The unidirectional TVS pipe of the present invention is than original two-way TVS cost reductions 30-50%, to make entire device cost reduce；
（4）Two chips polarity on the same lead frame of the present invention facilitate production towards unanimously；
（5）The present invention's exposes to modeling as the second lead frame of positive and negative electrode and the carrier lower half portion of the 4th lead frame
Feng Ti is directly contacted with pcb board when mounted, enhances heat conduction, and simplify installation procedure；
（6）The plastic-sealed body of the present invention is made of epoxy resin, and thermal diffusivity is strong, is had to the heat dissipation of entire rectifier bridge structure and is promoted
Effect；
（7）Unidirectional TVS is co-located at other two GPP diode chip for backlight unit on the second lead frame in the present invention, is placing core
When piece binding material and when welding chip, reduces machine and need mobile distance, the band at exchange end is individually located at compared to two-way TVS
The production of two-way TVS rectifier bridges, improves packaging efficiency.
The present invention is suitable for technical field of electronic devices.
Description of the drawings
Attached drawing is used to provide further understanding of the present invention, and a part for constitution instruction, the reality with the present invention
It applies example to be used to explain the present invention together, not be construed as limiting the invention.
In the accompanying drawings：
Fig. 1（a）For ideal power grid normal communication input waveform；
Fig. 1（b）There are power grids when surge to exchange input waveform；
Fig. 2 is the circuit theory of the full-wave rectification bridge in the prior art with two-way TVS input filters；
Fig. 3 is the circuit diagram of the embodiment of the present invention 1 and 2；
Fig. 4 is the dimensional structure diagram of the embodiment of the present invention 1；
Fig. 5 is the dimensional structure diagram of the embodiment of the present invention 2.
In figure：11, the first lead frame, the 12, second lead frame, 13, third lead frame, the 14, the 4th lead frame,
2, pad, 3, conducting wire, 4, binding material, the 51, first diode chip for backlight unit, the 52, second diode chip for backlight unit, 53, third diode chip for backlight unit,
54, the 4th diode chip for backlight unit, 55, unidirectional TVS chips, 6, plastic-sealed body.
Specific implementation mode
Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.It should be appreciated that preferred reality described herein
Apply example only for the purpose of illustrating and explaining the present invention and is not intended to limit the present invention.
A kind of full-wave rectification bridge structure of 1 integrated form antisurge of embodiment
As shown in figure 3, for the circuit diagram of the present embodiment.
As shown in figure 4, the present embodiment includes 51~54, unidirectional TVS of the 6, first~the 4th diode chip for backlight unit of plastic-sealed body
The 55, first~the 4th lead frame 11~14 of chip；
First diode chip for backlight unit 51 and 52 top surface of the second diode chip for backlight unit are p-type, are fixed on the second lead frame 12, point
The first lead frame 11, third lead frame 13 are not connected by conducting wire；Third diode chip for backlight unit 53 and the 4th diode chip for backlight unit
54 top surfaces are N-type, are fixed at 14 on the 4th lead frame, connect the first lead frame 11 by conducting wire respectively, third is drawn
Wire frame 13；Unidirectional 55 top surface of TVS chips is p-type, is fixed at 12 on the second lead frame, and drawn by conducting wire connection the 4th
Wire frame 14；The bonding material 4 that unidirectional TVS chips 55 and the first~the 4th diode chip for backlight unit 51~54 are arranged by its bottom surface respectively
It is fixed on the lead frame at respective place, the carrier of the first lead frame 11 and third lead frame 13 is all packaged in modeling
It seals in body 6, the first half of 14 carrier of the second lead frame 12 and the 4th lead frame is packaged in plastic-sealed body 6 and carrier lower part
Exceptionally it is exposed to plastic-sealed body 6；Exchange pin of first lead frame 11 with third lead frame 13 as input terminal, the second lead frame
Respectively as the positive and negative electrode pin of output end, the first~the 4th lead frame 11~14 is in for frame 12 and the 4th lead frame 14
In same plane；
First in the present embodiment~51~54 technical indicator of the 4th diode chip for backlight unit is identical；Bonding material 4 be conducting resinl or slicken solder,
Plastic-sealed body 6 is the shell with cavity that epoxy resin is constituted, and conducting wire 3 is connected by pad 2 with each lead frame.
Unidirectional TVS chips 55 are set to after conventional rectifier bridge and with four diode chip for backlight unit together in the present embodiment
Integration packaging is in plastic-sealed body 6, and the exchange input that zero floats up and down after the full-wave rectification of conventional rectifier bridge by becoming unidirectional
Direct current be subsequent conditioning circuit energy supply, using unidirectional TVS chips 55 absorb direct current in instantaneous large-current, play and existing skill
The identical effect of full-wave rectification bridge with two-way TVS input filters in art, and reduce on its basis entire device thickness and
Volume reduces cost.
A kind of full-wave rectification bridge structure of 2 integrated form antisurge of embodiment
It is illustrated in figure 5 the dimensional structure diagram of the present embodiment, difference of the present embodiment with embodiment 1 in structure is
One~the 4th lead frame 11~14, carrier are all packaged in the cavity of plastic-sealed body 6.
Other structures are same as Example 1, and operation principle is identical as embodiment.
Claims (6)
1. a kind of full-wave rectification bridge structure of integrated form antisurge, it is characterised in that：Including plastic-sealed body, the first~the 4th diode
Chip, unidirectional TVS chips, the first~the 4th lead frame；
Described first~the 4th diode chip for backlight unit technical indicator is identical；
The unidirectional TVS chips top surface is p-type, is fixed on the second lead frame, and connects the 4th lead frame by conducting wire
Frame；
First diode chip for backlight unit and the second diode chip for backlight unit top surface are p-type, are fixed on the second lead frame, respectively
The first lead frame, third lead frame are connected by conducting wire；
The third diode chip for backlight unit and the 4th diode chip for backlight unit top surface are N-type, are fixed on the 4th lead frame, respectively
The first lead frame, third lead frame are connected by conducting wire；
Exchange pin of first lead frame with third lead frame as input terminal, the second lead frame and the 4th lead
Positive and negative electrode pin of the frame respectively as output end.
2. a kind of full-wave rectification bridge structure of integrated form antisurge according to claim 1, it is characterised in that：Described first
~the four lead frame is in same plane.
3. a kind of full-wave rectification bridge structure of integrated form antisurge according to claim 1 or 2, it is characterised in that：It is described
The bonding material that unidirectional TVS chips and the first~the 4th diode chip for backlight unit are arranged by its bottom surface respectively is fixed at respective place
On lead frame, the bonding material is conducting resinl or slicken solder.
4. a kind of full-wave rectification bridge structure of integrated form antisurge according to claim 1 or 2, it is characterised in that：It is described
The carrier of first lead frame and third lead frame is all packaged in plastic-sealed body, the second lead frame and the 4th lead frame
The first half of carrier is packaged in plastic-sealed body and carrier lower part exposes to plastic-sealed body.
5. a kind of full-wave rectification bridge structure of integrated form antisurge according to claim 1 or 2, it is characterised in that：First
~the four lead frame carrier is all packaged in the cavity of plastic-sealed body.
6. a kind of full-wave rectification bridge structure of integrated form antisurge according to claim 1 or 2, it is characterised in that：It is described
Plastic-sealed body is the shell with cavity that epoxy resin is constituted.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810271390.4A CN108389853A (en) | 2018-03-29 | 2018-03-29 | A kind of full-wave rectification bridge structure of integrated form antisurge |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810271390.4A CN108389853A (en) | 2018-03-29 | 2018-03-29 | A kind of full-wave rectification bridge structure of integrated form antisurge |
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| Publication Number | Publication Date |
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| CN108389853A true CN108389853A (en) | 2018-08-10 |
Family
ID=63073307
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810271390.4A Pending CN108389853A (en) | 2018-03-29 | 2018-03-29 | A kind of full-wave rectification bridge structure of integrated form antisurge |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110600450A (en) * | 2019-10-25 | 2019-12-20 | 山东晶导微电子股份有限公司 | Lead frame for arranging chip, packaging body and power supply module |
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| CN205040058U (en) * | 2015-08-21 | 2016-02-17 | 晶科电子（广州）有限公司 | Luminous module of high pressure optical assembly with surge absorption and static inhibit feature |
| US20160344317A1 (en) * | 2014-08-08 | 2016-11-24 | Johnson Electric S.A. | Magnetic sensor integrated circuit, motor assembly and application apparatus |
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| CN205984975U (en) * | 2016-09-07 | 2017-02-22 | 四川上特科技有限公司 | Filtering transient state high -voltage pulse's ultra -thin rectifier bridge |
| CN206180863U (en) * | 2016-09-07 | 2017-05-17 | 四川上特科技有限公司 | Take two -way TVS input filter's full wave bridge rectifier |
| CN111710666A (en) * | 2020-07-13 | 2020-09-25 | 山东晶导微电子股份有限公司 | Rectifier bridge circuit module of rear TVS protection diode |
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2018
- 2018-03-29 CN CN201810271390.4A patent/CN108389853A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2884776Y (en) * | 2005-12-30 | 2007-03-28 | 浙江正泰电器股份有限公司 | Anti-electrostatic and surge preventing circuit |
| US20160344317A1 (en) * | 2014-08-08 | 2016-11-24 | Johnson Electric S.A. | Magnetic sensor integrated circuit, motor assembly and application apparatus |
| CN205040058U (en) * | 2015-08-21 | 2016-02-17 | 晶科电子（广州）有限公司 | Luminous module of high pressure optical assembly with surge absorption and static inhibit feature |
| CN106206528A (en) * | 2016-09-07 | 2016-12-07 | 四川上特科技有限公司 | Rectifier bridge based on the suppression of two-way TVS high-voltage pulse and processing technology thereof |
| CN205984975U (en) * | 2016-09-07 | 2017-02-22 | 四川上特科技有限公司 | Filtering transient state high -voltage pulse's ultra -thin rectifier bridge |
| CN206180863U (en) * | 2016-09-07 | 2017-05-17 | 四川上特科技有限公司 | Take two -way TVS input filter's full wave bridge rectifier |
| CN111710666A (en) * | 2020-07-13 | 2020-09-25 | 山东晶导微电子股份有限公司 | Rectifier bridge circuit module of rear TVS protection diode |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110600450A (en) * | 2019-10-25 | 2019-12-20 | 山东晶导微电子股份有限公司 | Lead frame for arranging chip, packaging body and power supply module |
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