CN113454264A - 具有用于局部影响基座温度的器件的cvd反应器 - Google Patents
具有用于局部影响基座温度的器件的cvd反应器 Download PDFInfo
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Abstract
本发明涉及一种用于对基材进行热处理的设备和方法,设备具有可由加热装置(13)加热的和可由转动驱动器(20)围绕转动轴线(A)转动驱动的用于容纳至少一个基材的基座(5)。为了补偿转动的基座(5)上的局部的温度差异,设置有器件(14、14’、15、16),所述器件用于局部限制从或到基座(5)的热传输,并且与基座(5)的转动运动同步地影响热传输。尤其规定,通过馈入开口(14’)以脉冲方式周期性地将具有变化的导热特性的调温气体馈入基座(5)和冷却机组(30)之间的间隙(10)中。
Description
技术领域
本发明涉及一种用于对基材进行热处理的设备,其具有可由加热装置加热的和可由转动驱动器围绕转动轴线转动驱动的、用于容纳至少一个基材的基座。
本发明还涉及一种用于对基材进行热处理的方法,在该方法中,基座承载至少一个基材,由加热装置加热,并且围绕转动轴线被转动驱动。
背景技术
文献US 8,249,436 B2描述了一种设备和一种方法,其中,借助脉冲式的激光射束向围绕转动轴线旋转的基座局部受限地导入热量。
前述的类型的设备和方法也是已知的,例如由文献DE 10 2009 044 276 A1已知。前述的类型的设备由CVD反应器体现,该CVD反应器具有气密性的壳体,过程室位于该壳体中。过程室的底部由可围绕转动轴线被转动驱动的基座构造。在基座上存在围绕中心的进气机构均匀地周向分布的多个基材支架,基材支架分别承载基材,并且在冲洗气流的转动驱动下保持悬浮。基座在加热装置上方转动,所述加热装置是由冷却剂冷却的感应线圈。通过第一高温计测量基座的底侧的温度。利用第二高温计测量放置在基材支架上的基材的温度。感应线圈产生高频的交变场,所述交变场在由石墨制成的基座内产生涡流,从而基座可以被加热到处理温度。基于制造技术的欠缺,基座的材料不具有均匀分布的导电性,从而形成具有低的导电性的区和具有高的导电性的区。因此,不同的电阻与在基座内感应出的涡流局部相抗,从而局部不同地加热基座。在65℃的平均温度的情况下,基座内的温度差异可以是5至8K。技术挑战是,尽可能均匀地设计基座顶侧的横向的温度曲线,基材布置在所述基座顶侧上。
从文献DE 10 2011 055 061 A1已知了一种CVD反应器,其中,由强导热的和弱导热的气体构成的气体混合物可以馈入加热装置和基座的底侧之间的间隙中。
现有技术还包括以下文献:DE 10 2005 056 536 A1、DE 10 2009 043 960 A1、DE10 2011 053 498 A1、DE 10 2013 109 155 A1、DE 10 2014 104 218 A1、DE 10 2017 105333 A1、US 2018/0182635 A1、US 5 468 299 A。
发明内容
本发明所要解决的技术问题在于,提供可以补偿基座的局部的温度差异的措施。
该技术问题通过在权利要求中给出的发明解决,其中,从属权利要求不仅表示在并列的权利要求中说明的发明的有利的扩展方案,而且还表示技术问题的单独的解决方案。
首先并且主要建议的是,设置若干器件,利用所述器件,在至少一个局部受限的热影响区以脉冲方式周期性地改变至基座的热量入流入或从基座的热量排放。器件与基座的转动运动同步工作。利用根据本发明的方法局部限制从基座或到基座的热传输,并且与基座的转动运动同步化地影响热传输。相对于设备的壳体,热影响区是局部固定的。热影响区在方位角度范围内延伸,所述方位角度范围优选小于围绕基座的转动中心的由基座的基材支架占据的角度范围。将热量以脉冲式持续时间输入或输入转动的基座的热影响区,所述脉冲时间被选择为,仅在鉴于基座的材料的局部更高的导电性而没有足够加热的部位上、即更冷的部位上将热量传递到转动的基座上。设备具有控制器,控制器与转动角度检测共同作用,利用转动角度检测可以检测基座的局部的转动角度。控制器使得热量影响与基座的转动运动同步化,例如使得在基座的各个旋转过程中,始终对相同部位进行热量加载。相对于壳体位置固定的热流优选在基座的每次旋转中分别加载基座的相同的热影响区。根据本发明建议,在热影响区的范围内,周期性地改变介质的导热特性。尤其建议,介质在基座和调温机组之间延伸。特别优选地建议,在热影响区的范围内,布置在基座和冷却机组之间的材料的导热特性以脉冲方式周期性地受到影响,其中,周期时间是基座旋转一圈的循环时间,并且脉冲宽度小于循环时间。为此尤其规定,间隙在基座和温度调温机组之间延伸,冲洗气流穿流过所述间隙。一个或多个局部的馈入开口可以设置在间隙中,通过馈入开口将调温气体馈入间隙中。具有第一热导性能的冲洗气体可以持续穿流过所述间隙。通过馈入开口以脉冲方式周期性地局部限制地馈入第二冲洗气体,第二冲洗气体具有与第一冲洗气体不同的热导性能。尤其规定,持续穿流过间隙的第一冲洗气体是氢气、即具有高的热导性能的气体,并且通过馈入开口馈入氮气、即具有更低的热导性能的气体。但也可以使用其他的气体对、例如氦气和氩气。冷却机组优选由液体冷却的感应线圈形成,利用该感应线圈加热基座。利用在平行于基座的延伸平面的平面内尤其螺旋形地布置的感应线圈,在由石墨或另一导热材料制成的基座内产生涡流。涡流的局部的大小与基座的材料的稍微变化的热导性能有关,从而由感应线圈产生的电磁交变场在基座内产生局部变化的能量流,该能量流导致局部的温度差。为了构造调温气体馈入其中的上述的间隙,可以设置板,该板以相对于基座的底侧的小的间隙距离在基座与感应线圈之间延伸。这种间隙在现有技术中设置用于形成扩散屏障。冲洗气流穿过所述间隙从径向内部朝布置在径向外部的排气机构的方向流动,该冲洗气流阻止馈入布置在基座上方的过程室中的处理气体进入感应线圈所在的区域中。调温气体馈入由持续气流形成的扩散屏障中。冲洗气体穿流过间隙的流速大于基座在基材支架的径向外边缘的高度上的循环速度。通过间隙的冲洗气流尤其是很大的,从而在基座超出热影响区时,在间隙中发生完全的气体交换。但替代调温气体的周期性的接通,也可以规定,恒定不变的气流穿流过馈入开口,所述气流在阀控制下要么是第一气体的气流,要么是第二气体的气流。为此尤其有利的是,在馈入开口上通入气体线路,由阀控制地选择性地将具有高的热导性能的气体或具有更小的热导性能的气体馈入该气体线路中。在本发明的扩展方案中建议,多个热影响区沿围绕基座的中心的周向方向布置,所述基座的中心与基座的转动轴线重合。但与之组合地或单独地也可以规定,多个热影响区相对于基座的转动中心沿径向方向依次布置,其中,热影响区要么由热辐射器被供应热量,要么是具有可变的导热特性的区。在本发明的扩展方案中可以规定,热影响区位于基材支架所处的周界线上。这实现的结果在于,只有转动的基材支架的径向外部的区域会受到热影响区的影响,从而也可以利用该措施调节基材支架上的温度曲线。因此尤其规定,利用用于影响热传输的器件仅对基材支架的径向外部的边缘产生影响。可以在不同的径向位置中布置温度测量点,利用温度测量点尤其在基座的底侧可以测量基座的表面温度。尤其规定,在热影响区的径向内部和径向外部布置有温度测量点。尤其规定,在温度测量点借助高温计测量基座的表面温度。尤其规定,为此使用光波导体。
根据本发明的具有独立的特征的变型方案建议,为了影响由围绕基材支架转动轴线被转动驱动的基材支架所承载的基材的径向的温度曲线,热影响区与基材支架转动轴线的围绕被转动驱动的基座的中心的旋转轨迹径向错开。在此尤其建议,热影响区相对于基座的转动轴线位于旋转轨迹的径向内部,或优选位于旋转轨迹的径向外部。在此尤其规定,其导热特性被改变的介质是位于基座和调温机组之间的气体,其中,利用冷却剂冷却的RF感应线圈考虑作为调温机组。在另一变型方案中规定,热影响区刚好位于基材支架转动轴线的旋转轨迹上。在本发明的变型方案中,导热特性不需要以脉冲方式周期性地改变。尤其有利的是,基材支架刚好承载具有圆形的造型的基材,其中,基材的中心点位于基材支架转动轴线中。利用变型方案,可以有针对性地调节基材的径向的温度曲线。为了影响布置在基座和调温机组之间的介质的导热特性尤其规定,通过布置在旋转轨迹径向外部的、布置在循环轨迹径向内部的或布置在旋转轨迹上的气体出口,将调温气体馈入在基座和调温机组之间或在机组和布置在基座与调温机组之间的板之间的间隙中。在此可以规定,调温气体的流动方向沿径向方向远离基材支架转动轴线的旋转轨迹地指向。在布置在旋转轨迹的径向外部的气体出口中,实现沿径向向外方向的流动方向。在布置在旋转轨迹的径向内部的气体出口中,流动方向径向向内指向。但也可能的是,即使在气体出口布置在旋转轨迹的径向内部的情况下,流动方向也相对于基材支架转动轴线沿径向向外方向指向。
附图说明
随后根据附图阐述本发明的实施例。其中:
图1以纵截面图示意性示出了CVD反应器和布置在其中的基座5;
图2示出了具有基座5的本发明的第一实施例的根据图1的图示;
图3示出了本发明的第一实施例的基座5的俯视图;
图4示出了本发明的第二实施例的根据图1的图示;
图5示出了本发明的第二实施例的基座5的俯视图;
图6示出了对基座5上的热影响区上的热量输入或热量排放的周期性脉冲影响的随时间的变化过程;
图7示出了本发明的第三实施例的根据图2的图示;
图8示出了本发明的第四实施例的根据图2的图示;
图9示出了本发明的第五实施例的根据图2的图示;
图10示出了本发明的第七实施例的根据图2的图示;
图11示出了根据图4的另外的实施例的图示。
具体实施方式
该类型的CVD反应器(参见图1)具有CVD反应器壳体1,该CVD反应器壳体是气密性的,可以由不锈钢构成并且可以具有冷却的壁。该CVD反应器壳体尤其具有盖部2、可以圆柱形地构造的侧壁3和与盖部2对置的底部4。盖部2、侧壁3和底部4可以是冷却的。
利用进气机构6可以将处理气体馈入过程室内。过程室向上通过过程室盖11限界,并且向下通过基座5限界。基座5由石墨制成或由其他的导电的材料制成,并且可以围绕载体12绕轴线A被转动驱动。为此使用转动驱动器20。设置有未示出的转动传感器,利用转动传感器可以确定基座5的相应的转动角度位置。转动角度被传送到未示出的控制器。
在基座5的下方存在加热装置13,加热装置由液体冷却的感应线圈构造,利用该感应线圈产生RF场,其在基座5内感应出涡流,涡流导致将基座加热到处理温度。通常,处理温度在600至1000℃的范围内。
基座5的面向过程室的顶侧具有多个沿周向方向布置在基座5的中心的周围的凹部,基材支架7分别位于凹部中,基材支架在其面向过程室的顶侧上承载基材,通过导入处理气体、例如III主族的金属有机化合物和V主族的氢化物可以为所述基材涂覆单晶材料。利用第一高温计21测量基材的表面温度。处理气体沿径向向外方向穿流过过程室,并且借助环形地包围基座5的排气机构9被导出。
在测量点31上,借助第二高温计22测量基座5的表面温度。由第一高温计21和第二高温计22测得的温度测量值被传送到未示出的控制装置。利用调节装置调节馈入感应线圈13中的功率,从而将基材温度或基座温度保持在额定值。
馈入基座5中的热能一方面穿过过程室、朝过程室盖部2或沿径向方向朝侧壁3离开基座。然而,基座5的最大的热流进入穿流过感应线圈13的冷却水。因此,感应线圈13利用其冷却通道30形成冷却机组,以便从基座5提取热量。
在图2和3中示出的实施例中,借助布置在基座5下方的密封板8,在基座5和加热装置13之间构造可供气体穿流的间隙10。密封板8的径向外边缘支撑在排气机构9的阶梯部19上。第一气流S1可以从径向内部流入间隙10中,第一气流形成扩散屏障,利用该扩散屏障避免处理气体到达感应线圈13所在的反应器壳体的区域。氢气通常用于此目的。
在至少一个周边位置上,在基材支架7所在的周边区的径向内部设置有馈入开口14’,气体线路14通入该馈入开口14’,第二气流S2可以利用该气体线路馈入间隙10中。为此优选使用氮气。根据图6脉冲的氮气流可以利用未示出的阀馈入间隙10中,从而与基座5的转动运动同步地使具有随时间不同的传热阻力的调温气体流动穿过基材支架7下方的间隙10。气流S3由两个气流S1和S2形成,并且影响从基座5到冷却机组30的热传输。气流S2与基座5的转动运动同步,使得只有当多个基材支架7中特定的基材支架7在具有气流S2的气流S3流过的角度范围内运动时,氮气才作为气流S2与氢气流S1混合。由于与氢气相比,氮气的热导性能更低,所以与在其余基材支架7上的其他的部位相比,从该基材支架7下方的基座5吸收的热量更少。因此可以补偿基座5的局部的冷却点。在该变型方案中,热影响区位于相对于基座5的转动轴线A的预设的径向位置和相对于基材支架转动轴线A的相对壳体固定的方位角度位置中。因为热影响与基座5的转动同步地进行,所以热影响区17也是相对于基座5位置固定的,因为总是相应地影响向相同的基材支架7的热传输。
图3和4示出了本发明的第二实施例。在此首先规定,利用换向阀27可以选择性地将氢气或氮气馈入气体线路14中。附图标记28和29表示质量流控制器,利用质量流控制器可以调节氮气流或氢气流。阀27可以是换向阀,该换向阀引导“阀线路”中的相应另一气流。
该阀布置也可以设置在其他的实施例中。但也可以设置仅一个质量流控制器,其将例如特定的量的氮气作为第二气流S2馈入间隙10中。
此外,在图3和4所示的实施例中规定,馈入开口14’位于基材支架7所处的周边环形区中,所述基材支架分别在气垫上被转动驱动地布置在基座5的顶侧的凹部中。馈入开口14’尤其相对于基材支架7的中心径向向外错开,从而利用在间隙10中馈入的调温气体和在此形成的气流S3,仅使基材支架7的径向外部的区受到温度影响。由于基材支架7的转动运动,在此可以对径向外部的区进行温度控制,并且因此产生温度曲线。
该实施例中的气流S3的流速是很高的,使得可以通过相应短的脉冲和具有可能不同的脉冲宽度的大量脉冲对每个基材支架7单独进行温度影响。为此,基材支架7下方的气流S3的流速优选大于基座在基材支架7的径向外边缘上相对于基座5的转动轴线A的循环速度。但优选地,流速S3至少是该循环速度的两倍。气流S3优选为大约20cm/s。
图4此外示出了两个温度测量点31、31’,其中,温度测量点31设置在馈入开口14’的径向内部,并且温度测量点31’设置在馈入开口14’的径向外部。但两个温度测量点31、31’的这种布置也可以设置在其他的在图2和3中示出的实施例中。尤其规定了,在测量点31、31’处通过高温计测量温度。为此,与未示出的高温计连接的光波导体24、26在管23、25中引导。
在图7所示的实施例中,多个热影响区和尤其多个馈入开口14’沿围绕基座5的转动轴线A的周向方向布置,其中,该布置是均匀分布的。
图8所示的第四实施例示出了多个热影响区或馈入开口14’,其分别布置在基材支架7所处的周边区的中心的径向位置上。但在那里示出的实施例的变型方案中,馈入开口14’也可以仅布置在基材支架7中的一些的下方,或仅布置在基材支架7中的一个的下方。备选地,在图8所示的实施例中在基材支架转动轴线的旋转轨迹上示出的馈入开口14’可以径向错开地布置。馈入开口14’因此可以相对于基座5的中心位于旋转轨迹的径向内部或径向外部。从一个或多个馈入开口14’排出的调温气体的流动方向可以相对于基座转动轴线不仅径向向内指向,而且径向向外指向。
在图9所示的实施例中,多个热影响区或馈入开口14’沿径向方向依次布置。馈入开口14’可以选择性地工作。基材支架7可以围绕基材支架转动轴线转动,并且尤其分别承载仅一个圆盘形的基材。在该实施例中可以规定,调温气体的从选出的馈入开口14’排出的气流非脉冲地、即恒定地排出到基座底侧和加热装置或冷却机组之间的空隙中。但在该变型方案中也可能的是,调温气体与基座的转动运动同步地并且脉冲地从馈入开口14’中的一个或多个排出。但也可能的是,气流非脉冲地通过馈入开口14’排出。不同的气流和/或不同的气体类型也可以脉冲地或非脉冲地从馈入开口14’排出。为此尤其有利的是,多个馈入开口14’相对于基座5的中心沿周向错开地布置。通过不同的馈入开口14’,不同的气体或不同的气体的混合物也可以以彼此不同的脉冲速率排出。
在图10所示的实施例中,馈入开口14’布置在基材支架7所在的周边区的在径向上最外部的区域中。热影响区或馈入开口14’在此甚至可以布置在基材支架7所在的区的径向外部。
至少一个热影响区17被限制在围绕轴线A的一个角度范围内。该方位角度范围最大为90、60或45度,或者优选最大为30度、20度或最大为15度。
图11所示的实施例基本上对应于图4所示的实施例,其中,然而在此规定了,馈入开口14位于基材支架转动轴线B的径向外部,基材支架7围绕该基材支架转动轴线被转动驱动。为此,基材支架7位于气垫上,该气垫以角动量馈入基材支架7和基座5之间的空隙中,使得基材支架7处于转动中。基材支架7在此优选承载圆形的基材。中心点和转动轴线B在此优选重合。
通过馈入开口14馈入间隙10中的气流沿向外方向穿流过间隙10。在此也可以恒定地或与基座5的转动同步地馈入气流。
光波导体24可以位于管23中,所述管23将第一气流S1馈入间隙10中,第一气流例如可以是氮气。管23相对于基座5的转动轴线A布置在基材支架转动轴线B的旋转轨迹的径向内部。在旋转轨迹的径向外部的区域中存在馈入开口14’,用于馈入具有不同的热导性能的气体、例如氢气,从而在基材支架7的径向外部的区域中在间隙10中提供与在基材支架转动轴线B所在的中心的区域中不同的热传输特性,
但在未示出的变型方案中,馈入开口14’也可以布置在基材支架7的转动轴线B的径向内部,并且位于基座5的转动轴线A附近。基材支架7的转动轴线B在反应器壳体1内表示出围绕基座5的旋转轴线的循环圆。馈入开口14’也可以位于旋转轨迹上。
前述的实施方案用于阐述本申请总体上所涵盖的发明,本发明至少通过以下特征组合也分别独立地对现有技术进行扩展,其中,特征组合中的两个、更多个或所有也可以组合,即:
一种设备,其特征在于,该器件以脉冲方式周期性地改变布置在基座5和调温机组之间的介质的导热特性。
一种方法,其特征在于,局部并且周期性地以脉冲方式改变布置在基座5和调温机组之间的介质的导热特性。
一种设备,其特征在于,热影响区17是相对于基座转动轴线A在基材支架转动轴线B围绕基座转动轴线A的旋转轨迹内部或外部或旋转轨迹上布置的区域。
一种方法,其特征在于,热影响区17是相对于基座转动轴线A在基材支架转动轴线B围绕基座转动轴线A的旋转轨迹内部或外部或旋转轨迹上布置的区域。
一种设备或一种方法,其特征在于,随着基座5的循环时间周期性地在小于基座5的循环时间的时间内,或者在大于基座5的循环时间的时间内,在位置受限的热影响区17中与在基座5的与之相邻的区域中相比为基座5导入或从基座导出更多的热量,或为此设定器件。
一种设备或一种方法,其特征在于,调温机组是冷却机组30,该冷却机组尤其由RF感应线圈13的冷却通道形成,其中,利用RF感应线圈13产生电磁交变场,其在基座5的导电材料中感应出涡流,用以对基座进行加热。
一种设备或一种方法,其特征在于,通过馈入开口14’,要么以脉冲方式周期性地,要么以恒定的流量将调温气体馈入基座5和调温机组之间、尤其是与冷却机组30之间的间隙10中,其中尤其规定,馈入具有周期性地变化的导热特性的调温气体,其中尤其规定,在馈入开口14’上通入气体输送线路14,借助换向阀28选择性地将具有高的热导性能的气体或具有更小的热导性能的气体馈入或可馈入气体输送线路中。
一种设备或一种方法,其特征在于,由布置在加热装置13和基座5的底侧之间的密封板8构造间隙10,冲洗气体的持续的第一气流S1穿流过间隙,调温气体的第二气流S2馈入第一气流S1中,其中,第一气流S1和第二气流S2形成在用于支承基材的基材支架7和加热装置13之间的第三气流S3,第三气流的流速大于基座5在基材支架7的径向外部的边缘上的周向速度。
一种设备或一种方法,其特征在于,设置有多个热影响区17,在热影响区中,以脉冲方式周期性地导入或导出热量,其中,热影响区17相对于基座5的中心布置以彼此不同的方位角度布置,和/或相对于基座5的中心以不同的径向距离布置。
一种设备或一种方法,其特征在于,至少一个热影响区17布置在围绕基座5的中心的周向区域中,多个基材支架位于基座中,在热影响区上,以脉冲方式周期性地导入或导出热量。
一种设备或一种方法,其特征在于,热影响区17被限制于围绕轴线A最大90度、60度、45度、30度或15度的角度范围。
一种设备或一种方法,其特征在于布置在热影响区的径向外部和/或径向内部的温度测量点31、31’,用以测量基座5的表面的温度。
一种设备或一种方法,其特征在于,调温气体相对于基座转动轴线A具有径向向内指向的或径向向外指向的流动方向。
一种设备或一种方法,其特征在于,多个馈入开口14’设置在相对于基座转动轴线A彼此不同的径向距离处,其中,选择性地通过一个或多个馈入开口14’可以馈入一种或多种调温气体。
所有公开的特征(单独地,但也相互组合地)对于本发明是重要的。本申请的公开内容也完全包括相关/所附的优先权文件(在先申请的副本)的公开内容,也是为了将这些文件的特征包含在本申请的权利要求中。即使没有引用的权利要求的特征,从属权利要求也利用其特征表征现有技术的独立的有创造性的扩展方案,尤其以便基于这些权利要求提出分案申请。在每个权利要求中说明的发明附加地可以具有在以上描述中尤其配设有附图标记的和/或在附图标记列表中说明的特征中的一个或多个。本发明还涉及若干设计形式,在这些设计形式中没有实现在前面的描述中提到的一些特征,尤其总体上它们对于相应的使用目的来说显然是不必要的,或者可以通过其他的技术上等效的器件替代。
附图标记清单
Claims (15)
1.一种用于对基材进行热处理的设备,所述设备具有可由加热装置(13)加热的和可由转动驱动器(20)围绕基座转动轴线(A)转动驱动的基座(5),所述基座具有用于容纳至少一个基材的基材支架(7),所述设备具有器件(14、14’),所述器件用于局部限制基座(5)的温度,并且与基座(5)的转动运动同步化地影响所述基座的温度,其特征在于,所述器件以脉冲方式周期性地改变布置在基座(5)和调温机组之间的介质的导热特性。
2.一种用于对基材进行热处理的方法,其中,基座(5)承载至少一个基材,由加热装置(13)加热,并且围绕转动轴线(A)被转动驱动,其中,在局部受限的部位上,所述基座(5)的温度与转动运动同步化地被影响,其特征在于,布置在基座(5)和调温机组之间的介质的导热特性局部并且以脉冲方式周期性改变。
3.一种用于对基材进行热处理的设备,所述设备具有可由加热装置(13)加热的和可由转动驱动器(20)围绕基座转动轴线(A)转动驱动的基座(5),所述基座承载至少一个相对于基座转动轴线(A)偏心布置的围绕基材支架转动轴线(B)可转动的、用于容纳至少一个基材的基材支架(7),所述设备具有器件(14、14’),所述器件用于在热影响区(17)的范围内影响布置在基座(5)和调温机组之间的介质的导热特性,其特征在于,所述热影响区(17)是相对于基座转动轴线(A)在基材支架转动轴线(B)围绕基座转动轴线(A)的旋转轨迹的径向内部或径向外部或旋转轨迹上布置的区域。
4.一种用于对基材进行热处理的方法,其中,基座(5)围绕基座转动轴线(A)被转动驱动,并且承载至少一个相对于基座转动轴线(A)偏心布置的基材支架(7),所述基材支架围绕基材支架转动轴线(B)转动并且承载至少一个基材,其中,在热影响区(17)的范围内利用器件(14、14’)影响布置在基座(5)和调温机组之间的介质的导热特性,其特征在于,所述热影响区(17)是相对于基座转动轴线(A)在基材支架转动轴线(B)围绕基座转动轴线(A)的旋转轨迹的径向内部或径向外部或旋转轨迹上布置的区域。
5.根据权利要求1或3所述的设备或根据权利要求2或4所述的方法,其特征在于,随着基座(5)的循环时间周期性地在小于基座(5)的循环时间的时间内,或者在大于基座(5)的循环时间的时间内,在位置受限的热影响区(17)中与在基座(5)的与之相邻的区域中相比为基座(5)导入或从基座导出更多的热量,或为此设置器件。
6.根据前述权利要求中任一项所述的设备或方法,其特征在于,所述调温机组是冷却机组(30),和/或所述冷却机组由RF感应线圈(13)的冷却通道形成,其中,利用所述RF感应线圈(13)产生电磁交变场,所述电磁交变场在基座(5)的导电材料中感应出涡流,用以对基座进行加热。
7.根据前述权利要求中任一项所述的设备或方法,其特征在于,通过馈入开口(14’),要么以脉冲方式周期性地要么以恒定的流量将调温气体馈入基座(5)和调温机组之间或与冷却机组(30)之间的间隙(10)中,和/或将具有周期性地变化的导热特性的调温气体馈入基座(5)和调温机组之间的间隙(10)中,和/或将气体输送线路(14)通入馈入开口(14’),借助换向阀(28)选择性地将具有高的热导性能的气体或具有更小的热导性能的气体馈入或可馈入所述气体输送线路中。
8.根据前述权利要求中任一项所述的设备或方法,其特征在于,由布置在加热装置(13)和基座(5)的底侧之间的密封板(8)构造间隙(10),冲洗气体的持续的第一气流(S1)穿流过所述间隙,调温气体的第二气流(S2)馈入所述第一气流(S1)中,其中,所述第一气流(S1)和所述第二气流(S2)形成在用于支承基材的基材支架(7)和加热装置(13)之间的第三气流(S3),所述第三气流的流速大于基座(5)在基材支架(7)的径向外部的边缘上的周向速度。
9.根据前述权利要求中任一项所述的设备或方法,其特征在于,设置有多个热影响区(17),在所述热影响区中,以脉冲方式周期性地导入或导出热量,其中,所述热影响区(17)相对于基座(5)的中心以彼此不同的方位角度布置,和/或相对于基座(5)的中心以不同的径向距离布置。
10.根据前述权利要求中任一项所述的设备或方法,其特征在于,至少一个热影响区(17)布置在围绕基座(5)的中心的周向区域中,多个基材支架位于所述基座中,在所述热影响区上,以脉冲方式周期性地导入或导出热量。
11.根据前述权利要求中任一项所述的设备或方法,其特征在于,所述热影响区(17)被限制于围绕轴线(A)最大90度、60度、45度、30度或15度的角度范围。
12.根据前述权利要求中任一项所述的设备或方法,其特征在于,在热影响区的径向外部和/或径向内部布置温度测量点(31、31’),用以测量基座(5)的表面的温度。
13.根据前述权利要求中任一项所述的设备或方法,其特征在于,所述调温气体相对于基座转动轴线(A)具有径向向内指向的或径向向外指向的流动方向。
14.根据前述权利要求中任一项所述的设备或方法,其特征在于,多个馈入开口(14’)设置在相对于基座转动轴线(A)彼此不同的径向距离处,其中,选择性地通过一个或多个馈入开口(14’)能够馈入一种或多种调温气体。
15.一种设备或方法,其特征在于前述权利要求中任一项所述的一个或多个特征部分。
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WO2020169385A3 (de) | 2021-03-18 |
EP3928349A2 (de) | 2021-12-29 |
WO2020169385A2 (de) | 2020-08-27 |
EP4328352A2 (de) | 2024-02-28 |
DE102019104433A1 (de) | 2020-08-27 |
JP2022521176A (ja) | 2022-04-06 |
JP7475357B2 (ja) | 2024-04-26 |
EP3928349C0 (de) | 2024-03-20 |
US20230383408A1 (en) | 2023-11-30 |
EP3928349B1 (de) | 2024-03-20 |
KR20210128461A (ko) | 2021-10-26 |
TW202035784A (zh) | 2020-10-01 |
US20220106687A1 (en) | 2022-04-07 |
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