CN113451095A - 基板支承器及等离子体处理装置 - Google Patents

基板支承器及等离子体处理装置 Download PDF

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Publication number
CN113451095A
CN113451095A CN202110226313.9A CN202110226313A CN113451095A CN 113451095 A CN113451095 A CN 113451095A CN 202110226313 A CN202110226313 A CN 202110226313A CN 113451095 A CN113451095 A CN 113451095A
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China
Prior art keywords
electrode
region
plasma processing
bias
substrate
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Pending
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CN202110226313.9A
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English (en)
Chinese (zh)
Inventor
田村一
佐佐木康晴
山口伸
菅原亚人
小泉克之
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN113451095A publication Critical patent/CN113451095A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2007—Holding mechanisms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
CN202110226313.9A 2020-03-25 2021-03-01 基板支承器及等离子体处理装置 Pending CN113451095A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020054019A JP7450427B2 (ja) 2020-03-25 2020-03-25 基板支持器及びプラズマ処理装置
JP2020-054019 2020-03-25

Publications (1)

Publication Number Publication Date
CN113451095A true CN113451095A (zh) 2021-09-28

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CN202110226313.9A Pending CN113451095A (zh) 2020-03-25 2021-03-01 基板支承器及等离子体处理装置

Country Status (6)

Country Link
US (4) US11935729B2 (enExample)
JP (4) JP7450427B2 (enExample)
KR (3) KR102864932B1 (enExample)
CN (1) CN113451095A (enExample)
SG (1) SG10202101800TA (enExample)
TW (3) TW202531486A (enExample)

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JP7450427B2 (ja) * 2020-03-25 2024-03-15 東京エレクトロン株式会社 基板支持器及びプラズマ処理装置
JP7462803B2 (ja) * 2021-01-29 2024-04-05 東京エレクトロン株式会社 プラズマ処理装置及びソース高周波電力のソース周波数を制御する方法
US12400845B2 (en) 2021-11-29 2025-08-26 Applied Materials, Inc. Ion energy control on electrodes in a plasma reactor
JP7740979B2 (ja) * 2021-12-13 2025-09-17 東京エレクトロン株式会社 プラズマ処理装置及び電位制御方法
JP2023146282A (ja) * 2022-03-29 2023-10-12 住友大阪セメント株式会社 静電チャック装置
CN119213534A (zh) * 2022-05-19 2024-12-27 东京毅力科创株式会社 等离子体处理装置
JP2024022859A (ja) * 2022-08-08 2024-02-21 東京エレクトロン株式会社 プラズマ処理装置及び静電チャック
CN119678244A (zh) 2022-08-16 2025-03-21 东京毅力科创株式会社 等离子体处理装置和静电吸盘
JP2024105999A (ja) * 2023-01-26 2024-08-07 東京エレクトロン株式会社 基板処理装置及び基板支持部
JP7768914B2 (ja) * 2023-01-31 2025-11-12 東京エレクトロン株式会社 プラズマ処理装置、静電チャック及びプラズマ処理方法
JPWO2024171714A1 (enExample) * 2023-02-14 2024-08-22
TW202439372A (zh) * 2023-03-27 2024-10-01 日商Ｔｏｔｏ股份有限公司 靜電吸盤
JP2025004870A (ja) 2023-06-27 2025-01-16 東京エレクトロン株式会社 基板支持器及びプラズマ処理装置
WO2025004843A1 (ja) * 2023-06-27 2025-01-02 東京エレクトロン株式会社 プラズマ処理装置及び電位制御方法
US20250201538A1 (en) * 2023-12-18 2025-06-19 Applied Materials, Inc. Esc design with enhanced tunability for wafer far edge plasma profile control
WO2025169740A1 (ja) * 2024-02-05 2025-08-14 東京エレクトロン株式会社 プラズマ処理装置、電源システム、制御方法、及びプログラム
JP7749883B1 (ja) * 2024-03-07 2025-10-06 東京エレクトロン株式会社 プラズマ処理装置及びバイアス電源システム
WO2025187456A1 (ja) * 2024-03-07 2025-09-12 東京エレクトロン株式会社 プラズマ処理装置、バイアス電源システム、及びプラズマ処理方法
WO2025238994A1 (ja) * 2024-05-13 2025-11-20 東京エレクトロン株式会社 プラズマ処理装置及び基板支持器
KR20250168674A (ko) * 2024-05-13 2025-12-02 도쿄엘렉트론가부시키가이샤 플라스마 처리 장치 및 기판 지지기

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CN1540738A (zh) * 2003-04-24 2004-10-27 ���������ƴ���ʽ���� 等离子体处理装置、聚焦环和基座
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US12293903B2 (en) 2025-05-06
JP7538935B2 (ja) 2024-08-22
KR20240113731A (ko) 2024-07-23
SG10202101800TA (en) 2021-10-28
JP2021158134A (ja) 2021-10-07
JP2024160333A (ja) 2024-11-13
TW202449977A (zh) 2024-12-16
JP7519525B2 (ja) 2024-07-19
US20240194457A1 (en) 2024-06-13
TWI887081B (zh) 2025-06-11
JP2024012608A (ja) 2024-01-30
US20210305025A1 (en) 2021-09-30
KR102719832B1 (ko) 2024-10-22
TW202205513A (zh) 2022-02-01
JP7763304B2 (ja) 2025-10-31
US20250132136A1 (en) 2025-04-24
TWI857215B (zh) 2024-10-01
KR20210119879A (ko) 2021-10-06
US11935729B2 (en) 2024-03-19
JP2024012609A (ja) 2024-01-30
TW202531486A (zh) 2025-08-01
KR20250127005A (ko) 2025-08-26
US20240194458A1 (en) 2024-06-13
JP7450427B2 (ja) 2024-03-15
KR102864932B1 (ko) 2025-09-26

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