CN113437726A - Reverse-connection-preventing self-recovery overcurrent protection circuit - Google Patents
Reverse-connection-preventing self-recovery overcurrent protection circuit Download PDFInfo
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- CN113437726A CN113437726A CN202110728019.8A CN202110728019A CN113437726A CN 113437726 A CN113437726 A CN 113437726A CN 202110728019 A CN202110728019 A CN 202110728019A CN 113437726 A CN113437726 A CN 113437726A
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- 238000011084 recovery Methods 0.000 title claims abstract description 13
- 230000002265 prevention Effects 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 2
- 230000002159 abnormal effect Effects 0.000 abstract description 2
- 230000000694 effects Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
- H02H3/08—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H11/00—Emergency protective circuit arrangements for preventing the switching-on in case an undesired electric working condition might result
- H02H11/002—Emergency protective circuit arrangements for preventing the switching-on in case an undesired electric working condition might result in case of inverted polarity or connection; with switching for obtaining correct connection
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
- H02H3/02—Details
- H02H3/06—Details with automatic reconnection
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Abstract
An anti-reverse-connection self-recovery overcurrent protection circuit comprises P-MOS transistors Q1, Q2 and Q3, triodes Q4, Q5 and Q6 and resistors. A diode D1 and a resistor are connected between the P-MOS transistors Q1 and Q2 IN series, the resistor is used as a current-limiting feedback resistor to control the on-off of the P-MOS transistor Q3, a POWER _ IN input POWER supply is input through the P-MOS transistor Q1, and finally the POWER _ OUT is output through the P-MOS transistor Q2. The circuit can ensure that the POWER _ IN input POWER supply is safely output from the POWER _ OUT, has an overcurrent protection self-recovery function, and can prevent the current of the POWER _ OUT from flowing to the POWER _ IN when the POWER _ OUT has an abnormal POWER supply, thereby playing a role of preventing reverse connection.
Description
Technical Field
The invention relates to an intelligent whole vehicle domain controller of a whole vehicle control system of a new energy vehicle, in particular to a reverse connection prevention self-recovery overcurrent protection circuit.
Background
With the higher complexity of the electrical system of the new energy automobile, the protection of the electrical system is very important. The overcurrent protection, the reverse connection protection and the like are easy to cause the hardware of the controller to be damaged and can not be repaired,
patent document CN210430924U discloses an input power supply reverse connection prevention protection circuit for an automobile controller, which includes a MOS transistor control circuit, a PMOS transistor Q1 and a resistor R1; the input end of the MOS tube control circuit is connected with the drain electrode of the PMOS tube; the output end of the MOS tube control circuit is connected with the source electrode of the PMOS tube; the grid electrode of the PMOS tube is connected with the ground through a resistor R1; the other end of the resistor R1 and the drain electrode of the PMOS tube are respectively used as the positive and negative terminals of the power supply. The circuit adopts the combination of an MOS tube and a diode to perform reverse connection prevention protection of the input power supply of the controller.
Patent document CN112510672A provides an anti-reverse-connection follow current protection circuit and a terminal, including a PWM generating circuit, a bootstrap circuit, and a follow current module connected in sequence; when an external load is reversely connected, the PWM generating circuit generates a PWM square wave, the bootstrap circuit is driven to generate bootstrap voltage based on the PWM square wave, and the bootstrap voltage drives the follow current module to be conducted to realize follow current protection.
However, the above techniques all have the problems of insufficient reliability, complex structure and the like.
Disclosure of Invention
The invention aims to provide a reverse connection prevention self-recovery overcurrent protection circuit which can prevent hardware such as a controller from being damaged, improve the reliability and simplify the structure.
The technical scheme of the invention is as follows:
the invention relates to an anti-reverse-connection self-recovery overcurrent protection circuit which comprises MOS (metal oxide semiconductor) tubes Q1, Q2 and Q3, triodes Q4, Q5 and Q6, resistors R1, R2, R3, R4, R5, R6 and R7 and a diode D1.
The drain D of the MOS tube Q1 is connected with the source S of the MOS tube Q2 through a series diode D1 and a resistor R3, a resistor R1 is connected between the source S and the grid G of the MOS tube Q1, the source S of the MOS tube Q1 is connected with a POWER _ IN input POWER supply, the grid G of the MOS tube Q1 is connected with the collector of a triode Q4 through a resistor R2, the base of the triode Q4 is connected with a CONTROL signal through a resistor, and the emitter of the triode is grounded.
The source S and the gate G of the MOS tube Q3 are connected with a resistor R3 in parallel, the source S of the MOS tube Q3 is connected with the joint of the resistor R3 and the cathode of a diode D1, the drain D of the P-MOS tube Q3 is grounded through a parallel circuit of a resistor R7 and a triode Q5, the drain D of the MOS tube Q3 is connected with the base of a triode Q5 through a resistor, and the emitter of the Q5 is grounded.
The grid G of the MOS transistor Q3 is connected with the collector of the triode Q5 through a resistor R4, and the collector of the triode Q5 is connected with the base of the triode Q6 through a resistor.
A resistor R5 is connected between a source S and a gate G of the MOS transistor Q2, the gate G of the MOS transistor Q2 is connected with a collector of a triode Q6 through an electric resistor R6, and an emitter of Q6 is grounded; the drain D of the MOS transistor Q2 is connected with POWER _ OUT output POWER supply.
The POWER _ IN input POWER supply of the controller circuit can be safely output from the POWER _ OUT, the overcurrent protection and self-recovery effect is achieved, and meanwhile, when the POWER _ OUT has an abnormal POWER supply, the current of the POWER _ OUT is effectively prevented from flowing to the POWER _ IN, the reverse connection prevention effect is achieved, the structure is simple, and the reliability is high.
Drawings
Fig. 1 is a schematic diagram of a reverse-connection-prevention self-recovery overcurrent protection circuit of the invention.
Detailed Description
The invention is described in detail below with reference to fig. 1 as follows:
the invention relates to an anti-reverse-connection self-recovery overcurrent protection circuit which comprises three P-MOS (metal oxide semiconductor) tubes, namely Q1, Q2 and Q3, three triodes, namely Q4, Q5 and Q6, seven resistors, namely R1, R2, R3, R4, R5, R6 and R7, and a diode D1 as shown in figure 1.
The drain D of the P-MOS transistor Q1 is connected with the source S of the PMOS transistor Q2 through a series diode D1 and a resistor R3, a resistor R1 is connected between the source S and the gate G of the P-MOS transistor Q1, the source S of the P-MOS transistor Q1 is connected with a POWER _ IN input POWER supply, the gate G of the P-MOS transistor Q1 is connected with the collector of a triode Q4 through the resistor R2, the base of the triode Q4 is connected with a CONTROL signal through a resistor, and the emitter of the triode is grounded.
The source S and the grid G of the P-MOS transistor Q3 are connected with a resistor R3 in parallel, the source S of the P-MOS transistor Q3 is connected with the joint of the resistor R3 and the cathode of a diode D1, the drain D of the P-MOS transistor Q3 is grounded through a parallel circuit of a resistor R7 and a triode Q5, the drain D of the P-MOS transistor Q3 is connected with the base of a triode Q5 through a resistor, and the emitter of the Q5 is grounded.
The grid G of the P-MOS transistor Q3 is connected with the collector of the triode Q5 through a resistor R4, and the collector of the triode Q5 is connected with the base of the triode Q6 through a resistor.
A resistor R5 is connected between the source S and the gate G of the P-MOS transistor Q2, the gate G of the P-MOS transistor Q2 is connected with the collector of the triode Q6 through the resistor R6, and the emitter of the Q6 is grounded; the drain D of the P-MOS tube Q2 is connected with the POWER _ OUT output POWER supply.
The working principle of the reverse-connection-prevention self-recovery overcurrent protection circuit is as follows:
firstly, power-on condition:
when the POWER _ IN POWER exists, the CONTROL signal is at a high level, the transistor Q4 is turned on, the resistor R1 and the resistor R2 form a divided voltage, the voltage drop of the resistor R1 is greater than the VGS turn-on voltage of the P-MOS Q1, so that the P-MOS Q1 is turned on, the POWER _ IN POWER passes through the P-MOS Q1, the diode D1 and the resistor R3, the voltage drop of the resistor R3 is small and does not reach the VGS turn-on voltage of the P-MOS Q3, the P-MOS Q3 is IN an off state, the resistor R7 does not drop, the transistor Q5 is IN an off state, the two ends of the resistor R4 are at a high level, so that the transistor Q6 is turned on, the resistor R5 and the resistor R6 form a divided voltage, the voltage drop of the resistor R5 is greater than the VGS turn-on voltage of the P-MOS Q2, the P-MOS Q2 is turned on, and the POWER _ IN POWER is output from the POWER _ OUT POWER.
Secondly, normal working conditions:
the current flowing from POWER _ OUT is substantially equal to the current flowing through the resistor R3, when the current flowing through the resistor R3 is small, the voltage drop of the resistor R3 is smaller than the VGS turn-on voltage of the P-MOS Q3, and the P-MOS Q3 is turned off. Similarly, the transistor Q5 is IN off state, the transistor Q6 is IN on state, and the P-MOS Q2 is IN on state, so that POWER _ IN POWER is normally output from POWER _ OUT.
Thirdly, overcurrent protection condition:
when the current flowing through the resistor R3 is large, the voltage drop of the resistor R3 is larger than the VGS turn-on voltage of the P-MOS Q3, and the P-MOS Q3 is turned on. At this time, the voltage drop of the resistor R7 is greater than the VGE starting voltage of the triode Q5, the triode Q5 is conducted, the control end voltage of the triode Q6 is less than the VGE starting voltage, the triode Q6 is in a turn-off state, the resistor R5 has no voltage drop, and the P-MOS Q2 is in a turn-off state, so that no voltage is output from the POWER _ OUT end, and the purpose of overcurrent protection is achieved.
Fourthly, after overcurrent, the power supply self-recovers and outputs:
after the P-MOS Q2 is turned off, the voltage drop of the resistor R3 is reduced to the VGS turn-on voltage of the P-MOS Q3, the P-MOS Q3 is turned off, and as above, the transistor Q5 is turned off, the transistor Q6 is turned on, and the P-MOS Q2 is turned on, so that the POWER _ IN POWER is output from POWER _ OUT. If the current flowing through the resistor R3 is small at this time, the POWER _ OUT is continuously output; if the current flowing through the resistor R3 is large, the steps of "three" and "four" are repeated continuously.
Fifthly, reverse connection prevention function:
when POWER _ IN is unpowered and POWER _ OUT is abnormally powered, IN the absence of diode D1, current can flow through the freewheeling diodes of P-MOS Q1 and P-MOS Q2 to POWER _ IN, risking damage to the freewheeling diodes of P-MOS Q1 and P-MOS Q2. After the diode D1 is added, the current of POWER _ OUT is prevented from flowing to POWER _ IN, and the purpose of protection is achieved.
The invention has been described in terms of preferred embodiments, but is not limited thereto.
Claims (2)
1. A reverse connection prevention self-recovery overcurrent protection circuit comprises MOS tubes Q1, Q2 and Q3, triodes Q4, Q5 and Q6, resistors R1, R2, R3, R4, R5, R6 and R7, a resistor R3 is used as a current-limiting feedback resistor to control the on-off of the MOS tube Q3, a POWER _ IN input POWER supply is input through the MOS tube Q1, and finally the POWER _ OUT is output through the MOS tube Q2; the method is characterized in that: also included is a diode D1;
the drain D of the MOS tube Q1 is connected with the source S of the MOS tube Q2 through a series diode D1 and a resistor R3, a resistor R1 is connected between the source S and the grid G of the MOS tube Q1, the source S of the P-MOS tube Q1 is connected with a POWER _ IN input POWER supply, the grid G of the MOS tube Q1 is connected with the collector of a triode Q4 through a resistor R2, the base of the triode Q4 is connected with a CONTROL signal through a resistor, and the emitter of the triode Q4 is grounded;
a source S and a gate G of the MOS tube Q3 are connected with a resistor R3 in parallel, a source S of the MOS tube Q3 is connected with the joint of the resistor R3 and the cathode of a diode D1, a drain D of the MOS tube Q3 is grounded through a parallel circuit of a resistor R7 and a triode Q5, a drain D of the MOS tube Q3 is connected with the base of a triode Q5 through a resistor, and an emitter of the Q5 is grounded;
the grid G of the MOS transistor Q3 is connected with the collector of the triode Q5 through a resistor R4, and the collector of the triode Q5 is connected with the base of the triode Q6 through a resistor;
a resistor R5 is connected between the source S and the gate G of the MOS transistor Q2, the gate G of the MOS transistor Q2 is connected with the collector of the triode Q6 through the resistor R6, and the emitter of the Q6 is grounded; the drain D of the MOS transistor Q2 is connected with POWER _ OUT output POWER supply.
2. The reverse-connection-prevention self-recovery overcurrent protection circuit as recited in claim 1, wherein the MOS transistor is a P-MOS transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110728019.8A CN113437726A (en) | 2021-06-29 | 2021-06-29 | Reverse-connection-preventing self-recovery overcurrent protection circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110728019.8A CN113437726A (en) | 2021-06-29 | 2021-06-29 | Reverse-connection-preventing self-recovery overcurrent protection circuit |
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|---|---|
| CN113437726A true CN113437726A (en) | 2021-09-24 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202110728019.8A Pending CN113437726A (en) | 2021-06-29 | 2021-06-29 | Reverse-connection-preventing self-recovery overcurrent protection circuit |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115474314A (en) * | 2022-10-31 | 2022-12-13 | 广东东菱电源科技有限公司 | High-voltage-resistant reverse-connection-prevention LED dimming interface protection circuit |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202513543U (en) * | 2012-04-25 | 2012-10-31 | 吴雯雯 | Overcurrent protection circuit |
| CN111071049A (en) * | 2020-01-16 | 2020-04-28 | 苏州海格新能源汽车电控系统科技有限公司 | Voltage output reverse connection prevention circuit |
| CN212323715U (en) * | 2019-10-16 | 2021-01-08 | 深圳市艾易科技有限公司 | Automatic protection circuit for input power supply of automobile controller |
| CN212323705U (en) * | 2019-10-16 | 2021-01-08 | 深圳市艾易科技有限公司 | Input power protection circuit of automobile controller |
-
2021
- 2021-06-29 CN CN202110728019.8A patent/CN113437726A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202513543U (en) * | 2012-04-25 | 2012-10-31 | 吴雯雯 | Overcurrent protection circuit |
| CN212323715U (en) * | 2019-10-16 | 2021-01-08 | 深圳市艾易科技有限公司 | Automatic protection circuit for input power supply of automobile controller |
| CN212323705U (en) * | 2019-10-16 | 2021-01-08 | 深圳市艾易科技有限公司 | Input power protection circuit of automobile controller |
| CN111071049A (en) * | 2020-01-16 | 2020-04-28 | 苏州海格新能源汽车电控系统科技有限公司 | Voltage output reverse connection prevention circuit |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115474314A (en) * | 2022-10-31 | 2022-12-13 | 广东东菱电源科技有限公司 | High-voltage-resistant reverse-connection-prevention LED dimming interface protection circuit |
| CN115474314B (en) * | 2022-10-31 | 2023-03-24 | 广东东菱电源科技有限公司 | High-voltage-resistant reverse-connection-prevention LED dimming interface protection circuit |
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Application publication date: 20210924 |